- Tan, T.Y. and Yu, S. and Gosele, U., Determination of Ga self-diffusion coefficient in GaAs,
Advanced III-V Compound Semiconductor Growth, Processing and Devices Symposium
pp. 739 - 46 .
(last updated on 2007/04/10)
A quantitative determination of the contributions of the triply-negatively charged Ga vacancies (VGa3-) and of the doubly-positively charged Ga self-interstitials (IGa2+) to Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the VGa3+ contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the IGa2+ contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals
enthalpy;gallium arsenide;III-V semiconductors;interstitials;self-diffusion in solids;vacancies (crystal);