- Taylor, W.J. and Tan, T.Y. and Gosele, U., Carbon precipitation in silicon: why is it so difficult?,
Appl. Phys. Lett. (USA), vol. 62 no. 25
pp. 3336 - 8 [1.109063] .
(last updated on 2007/04/10)
It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon