Papers Published

  1. Taylor, W.J. and Tan, T.Y. and Gosele, U., Carbon precipitation in silicon: why is it so difficult?, Appl. Phys. Lett. (USA), vol. 62 no. 25 (1993), pp. 3336 - 8 [1.109063] .
    (last updated on 2007/04/10)

    Abstract:
    It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon

    Keywords:
    carbon;elemental semiconductors;impurities;oxygen;precipitation;silicon;