Papers Published

  1. Negoita, M.D. and Tan, T.Y., Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect, J. Appl. Phys. (USA), vol. 94 no. 8 (2003), pp. 5064 - 70 [1.1611289] .
    (last updated on 2007/04/10)

    The contribution of metallic precipitates to recombination and to generation currents has been modeled for pn junction devices fabricated using Si, with the precipitate located in the space charge region of the device. The physical mechanism responsible for the electrical activity of the metallic precipitate is attributed to the Schottky junction property between the precipitate and the Si matrix materials. In steady states, it is found that the precipitate changes from a highly effective carrier recombination center to a carrier generation center when the junction bias is changed from forward to reverse biasing conditions. Based on the physical model, numerical simulation results showed that the precipitate electrical behavior resembles that of classical Shockley-Read-Hall recombination/generation centers, with a much larger activity

    electron-hole recombination;elemental semiconductors;p-n junctions;precipitation;Schottky effect;silicon;space charge;