- Gosele, U. and Tan, T.Y., Point defects and diffusion in silicon and gallium arsenide,
Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), vol. A59
pp. 1 - 16 .
(last updated on 2007/04/10)
Point defects and diffusion mechanisms in silicon and gallium arsenide are discussed with special emphasis on charge and non-equilibrium effects. For understanding diffusion processes in silicon and in GaAs both vacancies and self-interstitials in various charge states have to be taken into account. Results on dopant-enhanced intermixing of GaAs/AlGaAs superlattices make it possible to draw conclusions on the diffusion mechanisms of Ga, Be and Zn in GaAs
defect electron energy states;diffusion in solids;elemental semiconductors;gallium arsenide;III-V semiconductors;impurities;interstitials;self-diffusion in solids;silicon;vacancies (crystal);