Papers Published

  1. Gosele, U. and Tan, T.Y., Point defects and diffusion in silicon and gallium arsenide, Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), vol. A59 (1988), pp. 1 - 16 .
    (last updated on 2007/04/10)

    Abstract:
    Point defects and diffusion mechanisms in silicon and gallium arsenide are discussed with special emphasis on charge and non-equilibrium effects. For understanding diffusion processes in silicon and in GaAs both vacancies and self-interstitials in various charge states have to be taken into account. Results on dopant-enhanced intermixing of GaAs/AlGaAs superlattices make it possible to draw conclusions on the diffusion mechanisms of Ga, Be and Zn in GaAs

    Keywords:
    defect electron energy states;diffusion in solids;elemental semiconductors;gallium arsenide;III-V semiconductors;impurities;interstitials;self-diffusion in solids;silicon;vacancies (crystal);