Papers Published

  1. Tong, Q.-Y. and Kidao, G. and Tan, T.Y. and Gosele, U., Wafer bonding of Si with dissimilar materials, International Conference on Solid-State and Integrated Circuit Technology Proceedings (1995), pp. 524 - 526 .
    (last updated on 2007/04/10)

    Abstract:
    Wafer bonding provides a high degree of flexibility in material integration. However, the major concerns of Si wafer bonding with dissimilar materials are their thermal mismatch and the bubble generation during the annealing process. In this article, a low temperature bonding approach is described and implemented to realize bulk quality ultrathin SOI by an ion-implanted etch stop, single crystal ultrathin Si on quartz or on glass and Si/ZnS.

    Keywords:
    Bonding;Dissimilar materials;Semiconducting silicon;Ion implantation;Interfaces (materials);Annealing;Etching;Thermal stress;Peeling;Heating;Cooling;