- Tan, T.Y. and Yu, S. and Gosele, U., Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs,
J. Appl. Phys. (USA), vol. 70 no. 9
pp. 4823 - 6 [1.349048] .
(last updated on 2007/04/10)
A quantitative determination of the contributions of the triply negatively charged Ga vacancies (VGa3-) and of the doubly positively charged Ga self-interstitials (IGa2+) to the Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the VGa3- contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the IGa2+ contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals
gallium arsenide;III-V semiconductors;interstitials;self-diffusion in solids;vacancies (crystal);