Papers Published

  1. Clabes, J.G. and Rubloff, G.W. and Tan, T.Y., Chemical reaction and Schottky-barrier formation at V/Si interfaces, Phys. Rev. B, Condens. Matter (USA), vol. 29 no. 4 (1984), pp. 1540 - 50 [1540] .
    (last updated on 2007/04/10)

    The behavior of the V/Si interface has been studied under atomically clean interface conditions for a variety of Si surfaces [Si(111)-(7×7), Si(111)-(2×1), and Si(100)-c(4×2)] as a function of annealing used to promote the silicide formation reaction. Interface chemistry (composition, reactivity, and electronic structure) was revealed by angle-integrated ultraviolet (UPS) and X-ray photoemission spectroscopy and by Auger-electron spectroscopy (AES); transmission electron microscopy (TEM) and low-energy electron diffraction (LEED) were used to assess interface and surface atomic structure and microstructure; and the Schottky-barrier height φbn was monitored by synchrotron-radiation-photoemission measurements of Si(2p) core-level band bending. Surprising new information is obtained upon annealing (⩽350°C): Strong intermixing of V and Si atoms across the initially abrupt interface proceeds even through a relatively thick layer (~100 Å or more). This low-temperature intermixing behavior represents a new and important aspect of the metal/Si interfacial reaction, which has now been observed because of the high sensitivity of surface spectroscopy techniques and the preparation of atomically clean, well-ordered Si surfaces and interfaces

    annealing;Auger effect;chemisorption;diffusion in solids;elemental semiconductors;interface structure;low energy electron diffraction;photoelectron spectra;Schottky effect;semiconductor-metal boundaries;silicon;transmission electron microscope examination of materials;vanadium;X-ray photoelectron spectra;