- Tan, T. Y. and Gosele, U. and Morehead, F. F., ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.,
Applied Physics A: Solids and Surfaces, vol. A 31 no. 2
pp. 97 - 108 .
(last updated on 2007/04/10)
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.