Publications of Henry Everitt    :chronological  combined listing:

%% Books   
@book{Everitt:2005tm,
   Author = {Everitt, Henry O},
   Title = {Experimental aspects of quantum computing - Henry O. Everitt
             - Google Books},
   Publisher = {Springer},
   Year = {2005},
   url = {http://books.google.com/books?hl=en&lr=&id=bw1P7jZ_-ewC&oi=fnd&pg=PA1&dq=henry+everitt&ots=8BXaiaVjdP&sig=trKKcvpsayYdEo0r-_ijPeGSfbs},
   Abstract = {Practical quantum computing still seems more than a decade
             away, and researchers have not even identified what the best
             physical implementation of a quantum bit will be. There is a
             real need in the scientific literature for a dialogue on the
             topic of lessons learned and ...},
   Key = {Everitt:2005tm}
}

@incollection{Everitt:1995p6501,
   Author = {Everitt, HO and De Lucia and FC},
   Title = {ROTATIONAL ENERGY TRANSFER IN SMALL POLYATOMIC
             MOLECULES},
   Journal = {Advances in Atomic and Molecular Physics},
   Volume = {35},
   Pages = {331-400},
   Booktitle = {Advances in Atomic, Molecular, and Optical
             Physics},
   Publisher = {Academic Press, Inc.},
   Organization = {USA, Res Off, Res Triangle Pk, NC 27708 USA},
   Institution = {USA, Res Off, Res Triangle Pk, NC 27708 USA},
   Year = {1995},
   Language = {English},
   Key = {Everitt:1995p6501}
}


%% Papers Published   
@article{DeLucia:2009p1263,
   Author = {De Lucia and FC and Petkie, DT and Everitt, HO},
   Title = {A Double Resonance Approach to Submillimeter/Terahertz
             Remote Sensing at Atmospheric Pressure},
   Journal = {IEEE Journal of Quantum Electronics},
   Volume = {45},
   Number = {2},
   Pages = {163-170},
   Organization = {Ohio State Univ, Dept Phys, Columbus, OH 43210
             USA},
   Institution = {Ohio State Univ, Dept Phys, Columbus, OH 43210
             USA},
   Year = {2009},
   Month = {February},
   ISSN = {0018-9197},
   url = {http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4721654},
   Abstract = {The remote sensing of gases in complex mixtures at
             atmospheric pressure is a challenging problem and much
             attention has been paid to it. The most fundamental
             difference between this application and highly successful
             astrophysical and upper atmospheric remote sensing is the
             line width associated with atmospheric pressure broadening,
             similar to 5 GHz in all spectral regions. In this paper, we
             discuss quantitatively a new approach that would use a short
             pulse infrared laser to modulate the submillimeter/terahertz
             (SMM/THz) spectral absorptions on the time scale of
             atmospheric relaxation. We show that such a scheme has three
             important attributes. 1) The time resolved pump makes it
             possible and efficient to separate signal from atmospheric
             and system clutter, thereby gaining as much as a factor of
             10(6) in sensitivity. 2) The 3-D information matrix
             (infrared pump laser frequency, SMM/THz probe frequency, and
             time resolved SMM/THz relaxation) can provide orders of
             magnitude greater specificity than a sensor that uses only
             one of these three dimensions. 3) The congested and
             relatively weak spectra associated with large molecules can
             actually be an asset because the usually deleterious effect
             of their overlapping spectra can be used to increase signal
             strength.},
   Language = {English},
   Doi = {10.1109/JQE.2008.912473},
   Key = {DeLucia:2009p1263}
}

@article{Lucia:2007p735,
   Author = {de Lucia, Frank C and Petkie, Douglas T and Everitt, Henry
             O},
   Title = {A double resonance approach to submillimeter/terahertz
             remote sensing at atmospheric pressure},
   Journal = {arXiv},
   Year = {2007},
   Month = {October},
   url = {http://arxiv.org/abs/0710.5887v1},
   Abstract = {The remote sensing of gases in complex mixtures at
             atmospheric pressure is a challenging problem and much
             attention has been paid to it. The most fundamental
             difference between this application and highly successful
             astrophysical and upper atmospheric remote sensing is the
             line width associated with atmospheric pressure broadening,
             ~ 5 GHz in all spectral regions. In this paper, we discuss
             quantitatively a new approach that would use a short pulse
             infrared laser to modulate the submillimeter/terahertz
             (SMM/THz) spectral absorptions on the time scale of
             atmospheric relaxation. We show that such a scheme has three
             important attributes: (1) The time resolved pump makes it
             possible and efficient to separate signal from atmospheric
             and system clutter, thereby gaining as much as a factor of
             10^6 in sensitivity, (2) The 3-D information matrix
             (infrared pump laser frequency, SMM/THz probe frequency, and
             time resolved SMM/THz relaxation) can provide orders of
             magnitude greater specificity than a sensor that uses only
             one of these three dimensions, and (3) The congested and
             relatively weak spectra associated with large molecules can
             actually be an asset because the usually deleterious effect
             of their overlapping spectra can be used to increase signal
             strength.},
   Key = {Lucia:2007p735}
}

@article{1989JChPh..90.3520E,
   Author = {Everitt, HO and De Lucia and FC},
   Title = {A time‐resolved study of rotational energy transfer into A
             and E symmetry species of 1 3 CH 3 F},
   Journal = {Journal of Chemical Physics},
   Volume = {90},
   Number = {7},
   Pages = {3520-3527},
   Year = {1989},
   Month = {April},
   ISSN = {0021-9606},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989JChPh..90.3520E&link_type=EJOURNAL},
   Abstract = {Not Available},
   Doi = {10.1063/1.456665},
   Key = {1989JChPh..90.3520E}
}

@inproceedings{Wellenius:2008p1268,
   Author = {Wellenius, P and Suresh, A and Foreman, JV and Everitt, HO and Muth,
             JF},
   Title = {A visible transparent electroluminescent europium doped
             gallium oxide device},
   Journal = {Materials Science and Engineering: B},
   Volume = {146},
   Number = {1-3},
   Pages = {252-255},
   Booktitle = {Materials Science And Engineering B-Solid State Materials
             For Advanced Technology},
   Organization = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27606 USA},
   Institution = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27606 USA},
   Year = {2008},
   Month = {January},
   url = {http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TXF-4PDSXKP-2&_user=38557&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000004358&_version=1&_urlVersion=0&_userid=38557&md5=6df7bab5c82e01ed116da32630a218e8},
   Abstract = {Beta phase gallium oxide thin films deposited by pulsed
             laser deposition are efficient hosts for rare earth metals
             such as europium. In this study europium doped gallium oxide
             deposited on glass substrates is used to make red (611 nm)
             electroluminescent devices that are transparent to the
             visible spectrum. The conducting electrodes used are indium
             tin oxide (ITO), and a novel indium gallium zinc oxide
             (IGZO) layer also deposited by pulsed laser deposition. The
             origin of the red emission is the D-5(0) to F-7(2)
             transition and is consistent with photoluminescence and
             cathodoluminescence results. The turn on voltage of the
             device is about 45 V ac, and the device appears to be
             robust, operating at elevated voltages without degradation.
             (C) 2007 Elsevier B.V. All rights reserved.},
   Language = {English},
   Doi = {10.1016/j.mseb.2007.07.060},
   Key = {Wellenius:2008p1268}
}

@article{fds314097,
   Author = {Everitt, H and Evans, SL and Holt, CA and Bigsby, R and Khan,
             I},
   Title = {Acetabular Component Deformation under Rim Loading Using
             Digital Image Correlation and Finite Element
             Methods},
   Journal = {Applied Mechanics and Materials},
   Volume = {24-25},
   Pages = {275-280},
   Year = {2010},
   Month = {June},
   url = {http://dx.doi.org/10.4028/www.scientific.net/AMM.24-25.275},
   Doi = {10.4028/www.scientific.net/AMM.24-25.275},
   Key = {fds314097}
}

@article{fds318414,
   Author = {Mrozack, A and Heimbeck, M and Marks, DL and Richard, J and Everitt, HO and Brady, DJ},
   Title = {Adaptive millimeter-wave synthetic aperture imaging for
             compressive sampling of sparse scenes.},
   Journal = {Optics express},
   Volume = {22},
   Number = {11},
   Pages = {13515-13530},
   Year = {2014},
   Month = {June},
   url = {http://dx.doi.org/10.1364/oe.22.013515},
   Abstract = {We apply adaptive sensing techniques to the problem of
             locating sparse metallic scatterers using high-resolution,
             frequency modulated continuous wave W-band RADAR. Using a
             single detector, a frequency stepped source, and a lateral
             translation stage, inverse synthetic aperture RADAR
             reconstruction techniques are used to search for one or two
             wire scatterers within a specified range, while an adaptive
             algorithm determined successive sampling locations. The
             two-dimensional location of each scatterer is thereby
             identified with sub-wavelength accuracy in as few as 1/4 the
             number of lateral steps required for a simple raster scan.
             The implications of applying this approach to more complex
             scattering geometries are explored in light of the various
             assumptions made.},
   Doi = {10.1364/oe.22.013515},
   Key = {fds318414}
}

@article{Knight:2013jg,
   Author = {Knight, Mark W and King, Nicholas S and Liu, Lifei and Everitt, Henry O and Nordlander, Peter and Halas, Naomi
             J},
   Title = {Aluminum for Plasmonics},
   Journal = {ACS Nano},
   Volume = {8},
   Number = {1},
   Pages = {834--840},
   Year = {2013},
   Month = {November},
   url = {http://pubs.acs.org/doi/abs/10.1021/nn405495q},
   Abstract = {Unlike silver and gold, aluminum has material properties
             that enable strong plasmon resonances spanning much of the
             visible region of the spectrum and into the ultraviolet.
             This extended response, combined with its natural abundance,
             low cost, and amenability to manufacturing processes, makes
             aluminum a highly promising material for commercial
             applications. Fabricating Al-based nanostructures whose
             optical properties correspond with theoretical predictions,
             however, can be a challenge. In this work, the Al plasmon
             resonance is observed to be remarkably sensitive to the
             presence of oxide within the metal. For Al nanodisks, we
             observe that the energy of the plasmon resonance is
             determined by, and serves as an optical reporter of, the
             percentage of oxide present within the Al. This
             understanding paves the way toward the use of aluminum as a
             low-cost plasmonic material with properties and potential
             applications similar to those of the coinage
             metals.},
   Doi = {10.1021/nn405495q},
   Key = {Knight:2013jg}
}

@article{fds324043,
   Author = {Knight, MW and King, NS and Liu, L and Everitt, HO and Nordlander, P and Halas, NJ},
   Title = {Aluminum for plasmonics.},
   Journal = {ACS Nano},
   Volume = {8},
   Number = {1},
   Pages = {834-840},
   Year = {2014},
   Month = {January},
   url = {http://dx.doi.org/10.1021/nn405495q},
   Abstract = {Unlike silver and gold, aluminum has material properties
             that enable strong plasmon resonances spanning much of the
             visible region of the spectrum and into the ultraviolet.
             This extended response, combined with its natural abundance,
             low cost, and amenability to manufacturing processes, makes
             aluminum a highly promising material for commercial
             applications. Fabricating Al-based nanostructures whose
             optical properties correspond with theoretical predictions,
             however, can be a challenge. In this work, the Al plasmon
             resonance is observed to be remarkably sensitive to the
             presence of oxide within the metal. For Al nanodisks, we
             observe that the energy of the plasmon resonance is
             determined by, and serves as an optical reporter of, the
             percentage of oxide present within the Al. This
             understanding paves the way toward the use of aluminum as a
             low-cost plasmonic material with properties and potential
             applications similar to those of the coinage
             metals.},
   Doi = {10.1021/nn405495q},
   Key = {fds324043}
}

@article{Knight:2012ta,
   Author = {Knight, MW and Liu, L and Wang, Y and Brown, L and Mukherjee, S and King,
             NS and Everitt, HO and Nordlander, P and Halas, NJ},
   Title = {Aluminum plasmonic nanoantennas.},
   Journal = {Nano Letters},
   Volume = {12},
   Number = {11},
   Pages = {6000-6004},
   Organization = {Rice University, Houston, TX},
   Institution = {Rice University, Houston, TX},
   Year = {2012},
   Month = {November},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012NanoL..12.6000K&link_type=EJOURNAL},
   Abstract = {The use of aluminum for plasmonic nanostructures opens up
             new possibilities, such as access to short-wavelength
             regions of the spectrum, complementary metal-oxide-semiconductor
             (CMOS) compatibility, and the possibility of low-cost,
             sustainable, mass-producible plasmonic materials. Here we
             examine the properties of individual Al nanorod antennas
             with cathodoluminescence (CL). This approach allows us to
             image the local density of optical states (LDOS) of Al
             nanorod antennas with a spatial resolution less than 20 nm
             and to identify the radiative modes of these nanostructures
             across the visible and into the UV spectral range. The
             results, which agree well with finite difference time domain
             (FDTD) simulations, lay the groundwork for precise Al
             plasmonic nanostructure design for a variety of
             applications.},
   Doi = {10.1021/nl303517v},
   Key = {Knight:2012ta}
}

@article{Choi:2009iu,
   Author = {Choi, Soojeong and Kim, Tong-Ho and Wu, Pae and Brown, April and Everitt, Henry O and Losurdo, Maria and Bruno,
             Giovanni},
   Title = {Band bending and adsorption/desorption kinetics on N-polar
             GaN surfaces},
   Journal = {Journal of Vacuum Science {\&} Technology B:
             Microelectronics and Nanometer Structures},
   Volume = {27},
   Pages = {107},
   Year = {2009},
   Month = {January},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009JVSTB..27..107C&link_type=EJOURNAL},
   Abstract = {Not Available},
   Doi = {10.1116/1.3054345},
   Key = {Choi:2009iu}
}

@article{Choi:2009p1804,
   Author = {Choi, S and Kim, T-H and Wu, P and Brown, A and Everitt, HO and Losurdo, M and Bruno, G},
   Title = {Band bending and adsorption/desorption kinetics on N-polar
             GaN surfaces},
   Journal = {Journal of vacuum science & technology. B, Microelectronics
             and nanometer structures : processing, measurement, and
             phenomena : an official journal of the American Vacuum
             Society},
   Volume = {27},
   Number = {1},
   Pages = {107-112},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2009},
   ISSN = {1071-1023},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000027000001000107000001&idtype=cvips&gifs=yes},
   Abstract = {Highly reactive N-polar [000-1] GaN surfaces were analyzed
             using spectroscopic ellipsometry. Following exposure to air,
             observed changes in the pseudodielectric function near the
             GaN band edge indicate that surface contamination reduces
             the band bending. A subsequent Ga adsorption/desorption
             experiment on pristine N-polar GaN indicates that it
             contains a mixture of Ga-terminated and N-terminated
             surfaces. During deposition, Ga adatoms preferentially bond
             to the dangling bonds on the N-terminated surface: the
             measured 3.19 eV desorption activation energy equals the
             Ga-N decomposition energy. Further deposition forms a 1 ML
             Ga wetting layer whose 2.78 eV desorption activation energy
             is comparable to the Ga sublimation energy. © 2009 American
             Vacuum Society.},
   Language = {English},
   Doi = {10.1116/1.3054345},
   Key = {Choi:2009p1804}
}

@inproceedings{Foreman:ee,
   Author = {Foreman, JV and Everitt, HO and Yang, J and Liu, J},
   Title = {Carrier dynamics and photoexcited emission efficiency of
             ZnO:Zn phosphor powders},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {7214},
   Pages = {721405--721405--12},
   Booktitle = {Ultrafast Phenomena in Semiconductors and Nanostructure
             Materials XIII},
   Publisher = {SPIE},
   Year = {2009},
   url = {http://link.aip.org/link/PSISDG/v7214/i1/p721405/s1&Agg=doi},
   Abstract = {Nonstoichiometric ZnO with an excess of Zn atoms (ZnO:Zn)
             has a long history of use as a green/monochrome phosphor in
             electron-excited vacuum fluorescent and field emission
             displays. The advent of ultraviolet lasers and light
             emitting diodes presents the possibility of photoexciting
             the highly efficient, defect-related green emission in
             ZnO:Zn. Here we study experimentally the time-integrated
             quantum efficiency and the time-resolved photoluminescence
             decays of both near band edge and defect emissions in
             unannealed (ZnO) and annealed (ZnO:Zn) nanoparticles under
             femtosecond excitation. A comparison of results using
             one-photon excitation (excitation primarily near the
             particlés surface) versus two-photon excitation (uniform
             excitation throughout the particlés volume) elucidates how
             the quantum efficiencies depend on material properties, such
             as the spatial distributions of radiative and nonradiative
             defects, and on optical effects, such as reabsorption. ©
             2009 SPIE.},
   Doi = {10.1117/12.811561},
   Key = {Foreman:ee}
}

@article{fds314091,
   Author = {Avrutin, V and Özgür, U and Izyumskaya, N and Chevtchenko, S and Leach, J and Moore, JC and Baski, AA and Litton, C and Everitt, HO and Tsen, KT and Abouzaid, M and Ruterana, P and Morkoç,
             H},
   Title = {Carrier relaxation and stimulated emission in ZnO nanorods
             grown by catalyst-assisted vapor transport on various
             substrates},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {6474},
   Year = {2007},
   Month = {May},
   ISBN = {0819465879},
   ISSN = {0277-786X},
   url = {http://dx.doi.org/10.1117/12.708835},
   Abstract = {ZnO nanorods were grown by catalyst-assisted vapor phase
             transport on Si(001), GaN(0001)/c-Al 2 O 3 , and bulk
             ZnO(0001) substrates. Morphology studies as well as X-ray
             diffraction and transmission electron microscopy showed that
             ZnO nanorods grew mostly perpendicular to the GaN(0001) and
             ZnO(0001) substrate surface, whereas a more random
             directional distribution was found for nanorods on Si(001).
             Comprehensive optical properties of nanorods were studied by
             steady-state photoluminescence and time-resolved
             photoluminescence. Stimulated emission was observed from ZnO
             nanorods on GaN(0001)/c-Al 2 O 3 substrates, most likely due
             to their vertical orientation. Near-field scanning optical
             microscopy was applied to investigate luminescent properties
             of individual rods. Raman spectroscopy revealed biaxial
             compressive strain in the nanorod samples grown on Si(001).
             The strain magnitude was reducing with increasing length of
             the nanorods. Conductive atomic force microscopy showed that
             nanorods are electrically isolated from each other. I-V
             spectra of individual nanorods were measured.},
   Doi = {10.1117/12.708835},
   Key = {fds314091}
}

@inproceedings{Avrutin:2007hk,
   Author = {Avrutin, V and {\"O}zg{\"u}r, {\"U}mit and Izyumskaya, N and Chevtchenko, S and Leach, J and Moore, J C and Baski, A A and Litton, C and Everitt, Henry O and Tsen, K T and Abouzaid, M and Ruterana, P and Morko{\c c},
             H},
   Title = {Carrier relaxation and stimulated emission in ZnO nanorods
             grown by catalyst-assisted vapor transport on various
             substrates},
   Pages = {64741M--64741M--7},
   Booktitle = {Zinc Oxide Materials and Devices II},
   Publisher = {SPIE},
   Year = {2007},
   Month = {February},
   url = {http://link.aip.org/link/PSISDG/v6474/i1/p64741M/s1&Agg=doi},
   Abstract = {ZnO nanorods were grown by catalyst-assisted vapor phase
             transport on Si(001), GaN(0001)/c-Al2O3, and bulk ZnO(0001)
             substrates. Morphology studies as well as X-ray diffraction
             and transmission electron microscopy showed that ZnO
             nanorods grew mostly perpendicular to the GaN(0001) and
             ZnO(0001) substrate surface, whereas a more random
             directional distribution was found for nanorods on Si(001).
             Comprehensive optical properties of nanorods were studied by
             steady-state photoluminescence and time-resolved
             photoluminescence. Stimulated emission was observed from ZnO
             nanorods on GaN(0001)/c-Al2O3 substrates, most likely due to
             their vertical orientation. Near- field scanning optical
             microscopy was applied to investigate luminescent properties
             of individual rods. Raman spectroscopy revealed biaxial
             compressive strain in the nanorod samples grown on Si(001).
             The strain magnitude was reducing with increasing length of
             the nanorods. Conductive atomic force microscopy showed that
             nanorods are electrically isolated from each other. I-V
             spectra of individual nanorods were measured.},
   Language = {English},
   Doi = {10.1117/12.708835},
   Key = {Avrutin:2007hk}
}

@article{Anonymous:2001p763,
   Author = {Lee, CW and Everitt, Henry O and Zavada, J and Hommerich,
             U},
   Title = {Characteristics of visible luminescence of Eu-doped GaN on
             Silicon},
   Journal = {Manuscript},
   Pages = {1--9},
   Year = {2002},
   Abstract = {We report time-resolved photoluminescence study of Eu-doped
             GaN emission in the visible region.},
   Key = {Anonymous:2001p763}
}

@article{fds314064,
   Author = {Xie, J and Fu, Y and Özgür, U and Moon, YT and Yun, F and Morkoç, H and Everitt, HO and Sagar, A and Feenstra, RM and Inoki, CK and Kuan, TS and Zhou, L and Smith, DJ},
   Title = {Characterization of GaN epitaxial films grown on SiN
             x and TiN x porous network
             templates},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {6121},
   Year = {2006},
   Month = {May},
   ISBN = {0819461636},
   ISSN = {0277-786X},
   url = {http://dx.doi.org/10.1117/12.646858},
   Abstract = {We report on the structural, electrical, and optical
             characterization of GaN epitaxial layers grown by
             metalorganic chemical vapor deposition (MOCVD) on SiN x and
             TiN x , porous templates in order to reduce the density of
             extended defects. Observations by transmission electron
             microscopy (TEM) indicate an order of magnitude reduction in
             the dislocation density in GaN layers grown on TiN x and SiN
             x networks (down to ∼10 8 cm -2 ) compared with the
             control GaN layers. Both SiN x and TiN x porous network
             structures are found to be effective in blocking the
             threading dislocation from penetrating into the upper layer.
             Supporting these findings are the results from X-Ray
             diffraction and low temperature photoluminescence (PL)
             measurements. The linewidth of the asymmetric X-Ray
             diffraction (XRD) (1012) peak decreases considerably for the
             layers grown with the use of SiN x and TiN x layers, which
             generally suggests the reduction of edge and mixed threading
             dislocations. In general, further improvement is observed
             with the addition of a second SiN x layer. The room
             temperature decay times obtained from biexponential fits to
             time-resolved photoluminescence (TRPL) data are increased
             with the inclusion of SiN x and TiN x layers. TRPL results
             suggest that primarily point-defect and impurity-related
             nonradiative centers are responsible for reducing the
             lifetime. The carrier lifetime of 1.86 ns measured for a TiN
             x network sample is slightly longer than that for a 200
             μm-thick high quality freestanding GaN. Results on samples
             grown by a new technique called crack-assisted lateral
             overgrowth, which combines in situ deposition of SiN x mask
             and conventional lateral overgrowth, are also
             reported.},
   Doi = {10.1117/12.646858},
   Key = {fds314064}
}

@article{2006SPIE.6121...85X,
   Author = {Xie, J and Fu, Y and {\"O}zg{\"u}r, {\"U}mit and Moon, Y. T. and Yun, F and Morko, H. and Everitt, Henry O and Sagar, A and Feenstra, R. M. and Inoki, C K and Kuan, T S and Zhou, L and Smith, D. J.},
   Title = {Characterization of GaN epitaxial films grown on SiNx and
             TiNx porous network templates},
   Journal = {Gallium Nitride Materials and Devices. Edited by
             Litton},
   Volume = {6121},
   Pages = {85--96},
   Organization = {Virginia Commonwealth Univ. (USA)},
   Institution = {Virginia Commonwealth Univ. (USA)},
   Year = {2006},
   Month = {March},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006SPIE.6121...85X&link_type=ABSTRACT},
   Abstract = {We report on the structural, electrical, and optical
             characterization of GaN epitaxial layers grown by
             metalorganic chemical vapor deposition (MOCVD) on SiNx and
             TiNx porous templates in order to reduce the density of
             extended defects. Observations by transmission electron
             microscopy (TEM) indicate an order of magnitude reduction in
             the dislocation density in GaN layers grown on TiNx and SiNx
             networks (down to ~108 cm-2) compared with the control GaN
             layers. Both SiNx and TiNx porous network structures are
             found to be effective in blocking the threading dislocation
             from penetrating into the upper layer. Supporting these
             findings are the results from X-Ray diffraction and low
             temperature photoluminescence (PL) measurements. The
             linewidth of the asymmetric X-Ray diffraction (XRD) (1012)
             peak decreases considerably for the layers grown with the
             use of SiNx and TiNx layers, which generally suggests the
             reduction of edge and mixed threading dislocations. In
             general, further improvement is observed with the addition
             of a second SiNx layer. The room temperature decay times
             obtained from biexponential fits to time-resolved
             photoluminescence (TRPL) data are increased with the
             inclusion of SiNx and TiNx layers. TRPL results suggest that
             primarily point-defect and impurity-related nonradiative
             centers are responsible for reducing the lifetime. The
             carrier lifetime of 1.86 ns measured for a TiNx network
             sample is slightly longer than that for a 200 $\mu$m-thick
             high quality freestanding GaN. Results on samples grown by a
             new technique called crack-assisted lateral overgrowth,
             which combines in situ deposition of SiNx mask and
             conventional lateral overgrowth, are also
             reported.},
   Doi = {10.1117/12.646858},
   Key = {2006SPIE.6121...85X}
}

@article{MCCORMICK:1987p1559,
   Author = {McCormick, R and Everitt, H and DeLucia, F and Skatrud,
             D},
   Title = {Collisional energy transfer in optically pumped far-infrared
             lasers},
   Journal = {IEEE Journal of Quantum Electronics},
   Volume = {23},
   Number = {12},
   Pages = {2069-2077},
   Organization = {Duke Univ,Dept Phys,Durham,Nc 27706},
   Institution = {Duke Univ,Dept Phys,Durham,Nc 27706},
   Year = {1987},
   Month = {December},
   ISSN = {0018-9197},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=A1987L219400005&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Doi = {10.1109/JQE.1987.1073302},
   Key = {MCCORMICK:1987p1559}
}

@article{fds314086,
   Author = {Goyette, TM and McCormick, RI and De Lucia and FC and Everitt,
             HO},
   Title = {Collisions and rotational spectroscopy},
   Journal = {Journal of Molecular Spectroscopy},
   Volume = {153},
   Number = {1-2},
   Pages = {324-339},
   Year = {1992},
   Month = {May},
   ISSN = {0022-2852},
   url = {http://dx.doi.org/10.1016/0022-2852(92)90481-3},
   Doi = {10.1016/0022-2852(92)90481-3},
   Key = {fds314086}
}

@article{Goyette:1992p1553,
   Author = {Goyette, TM and MCCORMICK, RI and DeLucia, FC and Everitt,
             Henry O},
   Title = {COLLISIONS AND ROTATIONAL SPECTROSCOPY},
   Journal = {Journal Of Molecular Spectroscopy},
   Volume = {153},
   Number = {1-2},
   Pages = {324--339},
   Organization = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Institution = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Year = {1992},
   Month = {January},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=A1992HT47800030&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Key = {Goyette:1992p1553}
}

@inproceedings{Baughman:2012hm,
   Author = {Baughman, WE and Wilbert, DS and Balci, S and Bolus, M and Baker, M and Kung, P and Kim, SM and Heimbeck, MS and Everitt,
             HO},
   Title = {Comparative Reconstructions of THz Spectroscopic Imaging for
             Non-Destructive Testing and Biomedical Imaging},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {8363},
   Pages = {83630W--83630W--10},
   Booktitle = {Terahertz Physics, Devices, and Systems VI: Advanced
             Applications in Industry and Defense},
   Publisher = {SPIE},
   Year = {2012},
   ISSN = {0277-786X},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000305795500021&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Imaging with electromagnetic radiation in the THz frequency
             regime, between 0.2 THz and 10 THz, has made considerable
             progress in recent years due to the unique properties of THz
             radiation, such as being non-ionizing and transparent
             through many materials. This makes THz imaging and sensing
             promising for a plethora of applications; most notably for
             contraband detection and biomedical diagnostics. Though many
             methods of generation and detection terahertz radiation
             exist, in this study we utilize Terahertz Time Domain
             Spectroscopy (THz TDS) and THz digital holography using a
             coherent, tunable CW THz source. These methods enable access
             to both the amplitude and phase information of the traveling
             THz waves. As a result of the direct time-resolved detection
             method of the THz electric field, unique spectroscopic
             information about the objects traversed can be extracted
             from the measurements in addition to being able to yield
             intensity imaging contrast. Utilizing such capabilities for
             THz based imaging can be useful for both screening and
             diagnostic applications. In this work, we present the
             principles and applications of several reconstruction
             algorithms applied to THz imaging and sensing. We
             demonstrate its ability to achieve multi-dimensional imaging
             contrast of both soft tissues and concealed
             objects.},
   Doi = {10.1117/12.919627},
   Key = {Baughman:2012hm}
}

@article{Lantz:2009p4821,
   Author = {Lantz, KR and Pate, R and Stiff Roberts and AD and Duffell, AG and Smith,
             ER and Everitt, HO},
   Title = {Comparison of conjugated polymer deposition techniques by
             photoluminescence spectroscopy},
   Journal = {Journal of Vacuum Science and Technology
             B},
   Volume = {27},
   Number = {5},
   Pages = {2227-2231},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2009},
   Month = {October},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000027000005002227000001&idtype=cvips&gifs=yes},
   Abstract = {The effects of various deposition techniques on the
             photoluminescence spectra of the conjugated polymer
             poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-(1-cyanovinylene)
             phenylene] (MEH-CN-PPV) are investigated. Photoluminescence
             spectroscopy provides insight to the internal morphology of
             organic thin films through the identification of interchain
             or intrachain recombination peaks. Thin films were deposited
             on glass substrates by drop casting, spin casting, and
             resonant-infrared matrix-assisted pulsed laser evaporation
             (RIR-MAPLE) and were compared to the photoluminescence of
             the polymer in solution. The photoluminescence measurements
             reported in this article demonstrate that samples deposited
             by evaporative RIR-MAPLE have an internal morphology similar
             to that of MEH-CN-PPV in solution, leading to an enhancement
             of intrachain transitions in the conjugated
             polymer.},
   Language = {English},
   Doi = {10.1116/1.3222855},
   Key = {Lantz:2009p4821}
}

@article{Mrozack:2014ta,
   Author = {Mrozack, Alex and Heimbeck, Martin and Marks, Daniel L and Richard, Jonathan and Everitt, Henry O and Brady, David
             J.},
   Title = {Compressive and Adaptive Millimeter-wave
             SAR},
   Journal = {arXiv.org},
   Year = {2014},
   Month = {February},
   url = {http://arxiv.org/abs/1402.1466v1},
   Abstract = {We apply adaptive sensing techniques to the problem of
             locating sparse metallic scatterers using high-resolution,
             frequency modulated continuous wave W-band RADAR. Using a
             single detector, a frequency stepped source, and a lateral
             translation stage, inverse synthetic aperture RADAR
             reconstruction techniques are used to search for one or two
             wire scatterers within a specified range, while an adaptive
             algorithm determined successive sampling locations. The
             two-dimensional location of each scatterer is thereby
             identified with sub-wavelength accuracy in as few as 1/4 the
             number of lateral steps required for a simple raster scan.
             The implications of applying this approach to more complex
             scattering geometries are explored in light of the various
             assumptions made.},
   Key = {Mrozack:2014ta}
}

@article{fds327011,
   Author = {Zhu, R and Richard, JT and Brady, DJ and Marks, DL and Everitt,
             HO},
   Title = {Compressive sensing and adaptive sampling applied to
             millimeter wave inverse synthetic aperture
             imaging},
   Journal = {Optics express},
   Volume = {25},
   Number = {3},
   Pages = {2270-2270},
   Year = {2017},
   Month = {February},
   url = {http://dx.doi.org/10.1364/OE.25.002270},
   Doi = {10.1364/OE.25.002270},
   Key = {fds327011}
}

@article{fds314075,
   Author = {Heimbeck, MS and Wilson, DG and Frees, AE and Everitt,
             HO},
   Title = {Continuous Wave Terahertz Transmission Imaging Through
             Near-Field Aperture Funnels},
   Journal = {International Conference on Infrared, Millimeter, and
             Terahertz Waves},
   Year = {2011},
   ISSN = {2162-2027},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330296300233&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Key = {fds314075}
}

@article{Ozgur:2000p1779,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Lee, Chang-Won and Everitt,
             Henry O},
   Title = {Control of Coherent Acoustic Phonons},
   Journal = {arXiv},
   Volume = {cond-mat.mes-hall},
   Year = {2000},
   Month = {January},
   url = {http://arxiv.org/abs/cond-mat/0010170v2},
   Keywords = {cond-mat.mes-hall, cond-mat.mtrl-sci},
   Abstract = {Using sub-picosecond optical pump-probe techniques, coherent
             zone-folded longitudinal acoustic phonons (ZFLAPs) were
             generated and controlled in an InGaN multiple quantum well
             structure. A one-pump, one-probe differential transmission
             technique revealed that carriers injected near the barrier
             band edge were quickly captured into the quantum wells and
             generated strong coherent ZFLAP oscillations. Two-pump
             differential transmission was used to generate and control
             coherent ZFLAP oscillations through the relative timing and
             amplitude of the two pump pulses. Enhancement and
             suppression of ZFLAP oscillations were demonstrated,
             including complete cancellation of generated acoustic
             phonons for the first time in any material system. Coherent
             control was used to demonstrate that ZFLAPs are generated
             differently in InGaN multiple quantum wells than in
             GaAs/AlAs superlattices.},
   Key = {Ozgur:2000p1779}
}

@article{Ozgur:2001p1544,
   Author = {Ozgür , U and Lee, CW and Everitt, HO},
   Title = {Control of coherent acoustic phonons in semiconductor
             quantum wells.},
   Journal = {Physical Review Letters},
   Volume = {86},
   Number = {24},
   Pages = {5604-5607},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2001},
   Month = {June},
   ISSN = {0031-9007},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=000169239500050&SID=1Fl3lnGbDBb87AlP9CL&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {Using subpicosecond optical pump-probe techniques, coherent
             zone-folded longitudinal acoustic phonons (ZFLAPs) were
             investigated in an InGaN multiple quantum well structure. A
             two-pump differential transmission technique was used to
             generate and control coherent ZFLAP oscillations through the
             relative timing and amplitude of the two pump pulses.
             Enhancement and suppression of ZFLAP oscillations were
             demonstrated, including complete cancellation of generated
             acoustic phonons for the first time in any material system.
             Coherent control was used to demonstrate that ZFLAPs are
             generated differently in InGaN multiple quantum wells than
             in GaAs/AlAs superlattices.},
   Language = {English},
   Doi = {10.1103/physrevlett.86.5604},
   Key = {Ozgur:2001p1544}
}

@article{Wu:2009p4819,
   Author = {Wu, PC and Khoury, CG and Kim, T-H and Yang, Y and Losurdo, M and Bianco,
             GV and Vo-Dinh, T and Brown, AS and Everitt, HO},
   Title = {Demonstration of surface-enhanced Raman scattering by
             tunable, plasmonic gallium nanoparticles.},
   Journal = {Journal of the American Chemical Society},
   Volume = {131},
   Number = {34},
   Pages = {12032-12033},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2009},
   Month = {September},
   ISSN = {0002-7863},
   url = {http://pubs.acs.org/doi/abs/10.1021/ja903321z},
   Abstract = {Size-controlled gallium nanoparticles deposited on sapphire
             were explored as alternative substrates to enhance Raman
             spectral signatures. Gallium's resilience following
             oxidation is inherently advantageous in comparison with
             silver for practical ex vacuo nonsolution applications. Ga
             nanoparticles were grown using a simple molecular beam
             epitaxy-based fabrication protocol, and monitoring their
             corresponding surface plasmon resonance energy through in
             situ spectroscopic ellipsometry allowed the nanoparticles to
             be easily controlled for size. The Raman spectra obtained
             from cresyl fast violet (CFV) deposited on substrates with
             differing mean nanoparticle sizes represent the first
             demonstration of enhanced Raman signals from reproducibly
             tunable self-assembled Ga nanoparticles. Nonoptimized
             aggregate enhancement factors of approximately 80 were
             observed from the substrate with the smallest Ga
             nanoparticles for CFV dye solutions down to a dilution of 10
             ppm.},
   Language = {English},
   Doi = {10.1021/ja903321z},
   Key = {Wu:2009p4819}
}

@article{fds325475,
   Author = {Tanner, EA and Phillips, DJ and Persons, CM and De Lucia and FC and Everitt, HO},
   Title = {Design and Signature Analysis of Remote Trace-Gas
             Identification Methodology Based on Infrared-Terahertz
             Double-Resonance Spectroscopy},
   Journal = {Physical review applied},
   Volume = {2},
   Number = {5},
   Year = {2014},
   Month = {November},
   url = {http://dx.doi.org/10.1103/PhysRevApplied.2.054016},
   Doi = {10.1103/PhysRevApplied.2.054016},
   Key = {fds325475}
}

@article{fds314092,
   Author = {Butler, L and Wilbert, DS and Baughman, W and Balci, S and Kung, P and Kim,
             SM and Heimbeck, MS and Everitt, HO},
   Title = {Design, Simulation, and Characterization of THz Metamaterial
             Absorber},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {8363},
   Year = {2012},
   ISSN = {0277-786X},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000305795500011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Doi = {10.1117/12.919625},
   Key = {fds314092}
}

@article{fds318442,
   Author = {BOWDEN, CM and DOWLING, JP and EVERITT, HO},
   Title = {DEVELOPMENT AND APPLICATIONS OF MATERIALS EXHIBITING
             PHOTONIC BAND-GAPS - INTRODUCTION},
   Journal = {Journal of the Optical Society of America
             B},
   Volume = {10},
   Number = {2},
   Pages = {280-280},
   Year = {1993},
   Month = {February},
   Key = {fds318442}
}

@article{BOWDEN:1993p1556,
   Author = {BOWDEN, CM and DOWLING, JP and Everitt, Henry
             O},
   Title = {DEVELOPMENT AND APPLICATIONS OF MATERIALS EXHIBITING
             PHOTONIC BAND-GAPS - INTRODUCTION},
   Journal = {Journal Of The Optical Society Of America B-Optical
             Physics},
   Volume = {10},
   Number = {2},
   Pages = {280--280},
   Organization = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Institution = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Year = {1993},
   Month = {January},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=A1993KK74500013&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Key = {BOWDEN:1993p1556}
}

@article{1987JOSAB...4..182E,
   Author = {Everitt, Henry O and McCormick, Rodney I. and Delucia, Frank
             C. and Skatrud, David D.},
   Title = {Diagnostics, modeling, and demonstration of a compact,
             tunable far-infrared laser (A)},
   Journal = {Journal Of The Optical Society Of America B-Optical
             Physics},
   Volume = {4},
   Pages = {182},
   Year = {1987},
   Month = {February},
   url = {http://adsabs.harvard.edu/abs/1987JOSAB...4..182E},
   Abstract = {Not Available},
   Key = {1987JOSAB...4..182E}
}

@article{fds325480,
   Author = {Everitt, HO and McCormick, RI and DeLucia, FC and Skatrud,
             DD},
   Title = {DIAGNOSTICS, MODELING, AND DEMONSTRATION OF A COMPACT,
             TUNABLE FAR-INFRARED LASER.},
   Pages = {160},
   Year = {1987},
   Month = {January},
   ISBN = {0936659513},
   Abstract = {A program of diagnostic studies and theoretical modeling has
             resulted in development of a tunable optically pumped
             far-infrared (FIR) laser that is very compact. The
             tunability of this laser comes about because it operates at
             pressures significantly higher than the maximum allowed by
             previously accepted theory. Typical dimensions for the
             compact FIR laser are a radius of 3 mm and a length of 150
             mm. Because of the small diameter, the pump intensity is
             high even with modest pumping powers. At high pressures, the
             additional highly excited vibrational states become very
             important, and operation much above the cutoff pressure
             predicted by conventional theory becomes possible. The key
             element of the model, which explains the high-pressure
             operation of the laser is the inclusion of the additional
             highly excited vibrational states and the associated energy
             transfer processes. A very simple nonoptimized version of
             this laser has provided a tunability of 100 MHz. The model
             predicts that optimization of the device will produce 1000
             MHz of tunability. Although **1**3CH//3F was used for all
             this work, the concept is general and would appear to apply
             to all diffusion-relaxed FIR lasers.},
   Key = {fds325480}
}

@article{Li:2009p1264,
   Author = {Li, J and Zhang, Q and Peng, H and Everitt, HO and Qin, L and Liu,
             J},
   Title = {Diameter-controlled vapor-solid epitaxial growth and
             properties of aligned ZnO nanowire arrays},
   Journal = {The Journal of Physical Chemistry C},
   Volume = {113},
   Number = {10},
   Pages = {3950-3954},
   Organization = {Duke Univ, Dept Chem, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Chem, Durham, NC 27708 USA},
   Year = {2009},
   ISSN = {1932-7447},
   url = {http://pubs.acs.org/doi/abs/10.1021/jp8083716},
   Abstract = {A facile, template-free method was used to grow large areas
             of well-aligned ZnO nanowire arrays on amorphous SiO 2
             substrates. The arrays are composed of vertically aligned,
             single-crystalline, wurtzitic [001] ZnO nanowires whose
             diameters were easily controlled by growth temperature,
             adjusted by changing the distance between the substrate and
             the precursor material in the growth chamber. A vapor-solid
             epitaxial growth mechanism is proposed by which ZnO
             nanocrystals, nucleated on a NiO catalytic film, seed the
             growth of the ZnO nanowires. Photoluminescence spectra
             indicate broad visible wavelength emission, likely caused by
             near surface traps, whose intensity relative to band edge
             ultraviolet emission grows as nanowire radii decrease. UV
             photoconductivity measured for individual ZnO nanowire
             devices demonstrates their potential as a UV light
             nanosensor. © 2009 American Chemical Society.},
   Language = {English},
   Doi = {10.1021/jp8083716},
   Key = {Li:2009p1264}
}

@article{2009JAP...105h3509G,
   Author = {Glinka, Yuri D and Foreman, John V and Everitt, Henry O and Lee, Don S and Steckl, Andrew J},
   Title = {Direct and indirect photoluminescence excitation and
             ultraviolet emission from Tm-doped AlxGa1-xN},
   Journal = {Journal of Applied Physics},
   Volume = {105},
   Number = {8},
   Pages = {3509},
   Organization = {U.S. Army Aviation and Missile RDEC, Redstone Arsenal,
             Alabama 35898, USA; Nano and Micro Devices Center,
             University of Alabama in Huntsville, Huntsville, Alabama
             35899, USA},
   Institution = {U.S. Army Aviation and Missile RDEC, Redstone Arsenal,
             Alabama 35898, USA; Nano and Micro Devices Center,
             University of Alabama in Huntsville, Huntsville, Alabama
             35899, USA},
   Year = {2009},
   Month = {April},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009JAP...105h3509G&link_type=ABSTRACT},
   Abstract = {We provide experimental evidence for direct and indirect
             excitations of photoluminescence (PL) from Tm-doped
             AlxGa1-xN of varying Al content. Direct excitation of Tm3+
             ions is observed primarily at 85 K through transitions
             3H6-->1I6, 3P0, 3P1, and 3P2 when these levels are below the
             absorption edge of the AlxGa1-xN for a given Al content.
             Strong ultraviolet emission at 298 nm (1I6-->3H6), 355 nm
             (1I6-->3F4), and 371 nm (1D2-->3H6), as well as the familiar
             blue emission at 463 nm (1D2-->3F4), and 479 nm (1G4-->3H6),
             is found to depend sensitively on the Al content, excitation
             wavelength (i.e., direct or indirect), excitation type
             (continuous wave versus pulsed), and upper state of the
             transition. PL excitation spectroscopy and time-integrated
             and time-resolved PL spectra are compared to elucidate the
             complex energy transfer pathways.},
   Doi = {10.1063/1.3098256},
   Key = {2009JAP...105h3509G}
}

@article{fds314134,
   Author = {Glinka, YD and Foreman, JV and Everitt, HO and Lee, DS and Steckl,
             AJ},
   Title = {Direct and indirect photoluminescence excitation and
             ultraviolet emission from Tm-doped AlxGa1−xN},
   Journal = {Journal of Applied Physics},
   Volume = {105},
   Number = {8},
   Pages = {083509-083509},
   Year = {2009},
   Month = {April},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.3098256},
   Doi = {10.1063/1.3098256},
   Key = {fds314134}
}

@article{Glinka:2009p888,
   Author = {Glinka, Yuri D and Foreman, John V and Everitt, Henry O and Lee, Don S and Steckl, Andrew J},
   Title = {Direct and indirect photoluminescence excitation and
             ultraviolet emission from Tm]-doped AlxGa1-xN},
   Journal = {Journal of Applied Physics},
   Volume = {105},
   Number = {8},
   Pages = {--},
   Organization = {USA, Aviat {\&} Missile RDEC, Redstone Arsenal, AL 35898
             USA},
   Institution = {USA, Aviat {\&} Missile RDEC, Redstone Arsenal, AL 35898
             USA},
   Year = {2009},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000105000008083509000001&idtype=cvips&gifs=yes},
   Abstract = {We provide experimental evidence for direct and indirect
             excitations of photoluminescence (PL) from Tm-doped
             AlxGa1-xN of varying Al content. Direct excitation of Tm3+
             ions is observed primarily at 85 K through transitions
             H-3(6)-> I-1(6), P-3(0), P-3(1), and P-3(2) when these
             levels are below the absorption edge of the AlxGa1-xN for a
             given Al content. Strong ultraviolet emission at 298 nm
             (I-1(6)-> H-3(6)), 355 nm (I-1(6)-> F-3(4)), and 371 nm
             (D-1(2)-> H-3(6)), as well as the familiar blue emission at
             463 nm (D-1(2)-> F-3(4)), and 479 nm ((1)G(4)-> H-3(6)), is
             found to depend sensitively on the Al content, excitation
             wavelength (i.e., direct or indirect), excitation type
             (continuous wave versus pulsed), and upper state of the
             transition. PL excitation spectroscopy and time-integrated
             and time-resolved PL spectra are compared to elucidate the
             complex energy transfer pathways.},
   Language = {English},
   Doi = {10.1063/1.3098256},
   Key = {Glinka:2009p888}
}

@article{Everitt:1986p1558,
   Author = {Everitt, HO and Skatrud, DD and DeLucia, FC},
   Title = {Dynamics and tunability of a small optically pumped cw
             far‐infrared laser},
   Journal = {Applied Physics Letters},
   Volume = {49},
   Number = {16},
   Pages = {995-997},
   Year = {1986},
   Month = {October},
   ISSN = {0003-6951},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=A1986E435400003&SID=2Dfb9AFL3jni2%40d8oGp&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Doi = {10.1063/1.97469},
   Key = {Everitt:1986p1558}
}

@article{fds314087,
   Author = {Glinka, YD and Everitt, HO and Lee, DS and Steckl,
             AJ},
   Title = {Effect of -induced defects on the photoexcitation energy
             relaxation in Tm-doped},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {79},
   Number = {11},
   Year = {2009},
   Month = {March},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.79.113202},
   Doi = {10.1103/PhysRevB.79.113202},
   Key = {fds314087}
}

@inproceedings{Avrutin:2008cq,
   Author = {Avrutin, V and Reshchikov, M A and Nie, J and Izyumskaya, N and Shimada, R and {\"O}zg{\"u}r, {\"U}mit and Foreman, John
             V and Everitt, Henry O and Litton, C and Morko{\c c},
             H},
   Title = {Effect of ion damage on optical properties of ZnO films
             grown by plasma-assisted MBE},
   Pages = {68950Y--68950Y--8},
   Booktitle = {Zinc Oxide Materials and Devices III},
   Publisher = {SPIE},
   Year = {2008},
   Month = {February},
   url = {http://link.aip.org/link/PSISDG/v6895/i1/p68950Y/s1&Agg=doi},
   Abstract = {The effect of plasma-induced ion damage on the optical
             properties of ZnO films grown by plasma-assisted molecular
             beam epitaxy on a-sapphire substrates and
             GaN(0001)/c-sapphire templates prepared has been studied
             using steady-state and time-resolved photoluminescence. We
             observed that the deflecting the ions produced by the RF
             oxygen plasma away from substrate results in improved
             excitonic emission and modification of the defect-related PL
             spectrum. The intensity of the near-band-edge lines in the
             photoluminescence spectra from the layers grown with the ion
             deflection was found to increase by factors 7 to 20 for the
             layers grown on GaN(0001)/c-sapphire at a plasma power of
             350 W and by 3 to 4 times for ZnO grown on a-sapphire
             substrates at a plasma power of 265 W as compared to the
             controls grown without the ion deflection. The yellow-green
             spectral range was dominated by different defect bands in
             the films grown with and without ion deflection. The effect
             of RF power on peak positions of the defect band was studied
             for the films grown without ion deflection. For the ZnO
             films grown on a-plane sapphire substrates, time-resolved
             photoluminescence showed a significant increase in
             luminescence decay times both at RT and 89 K. However, for
             ZnO on GaN(0001)/c- sapphire substrates, virtually no
             improvement in decay time was found at 89 K with only a
             moderate increase in decay constant at room
             temperature.},
   Language = {English},
   Doi = {10.1117/12.764132},
   Key = {Avrutin:2008cq}
}

@article{fds318424,
   Author = {Avrutin, V and Reshchikov, MA and Nie, J and Izyumskaya, N and Shimada,
             R and Ozgur, U and Foreman, JV and Everitt, HO and Litton, C and Morkoc,
             H},
   Title = {Effect of ion damage on optical properties of ZnO films
             grown by plasma-assisted MBE},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {6895},
   Pages = {Y8950-Y8950},
   Year = {2008},
   ISBN = {978-0-8194-7070-6},
   url = {http://dx.doi.org/10.1117/12.764132},
   Doi = {10.1117/12.764132},
   Key = {fds318424}
}

@article{2005ApPhL..86e1110P,
   Author = {Peng, HY and Lee, CW and Everitt, HO and Lee, DS and Steckl, AJ and Zavada,
             JM},
   Title = {Effect of optical excitation energy on the red luminescence
             of Eu3+ in GaN},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {5},
   Pages = {051110-051110},
   Organization = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Institution = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Year = {2005},
   Month = {January},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005ApPhL..86e1110P&link_type=ABSTRACT},
   Abstract = {Photoluminescence (PL) excitation spectroscopy mapped the
             photoexcitation wavelength dependence of the red
             luminescence (5D0-->7F2) from GaN:Eu. Time-resolved PL
             measurements revealed that for excitation at the GaN bound
             exciton energy, the decay transients are almost temperature
             insensitive between 86 K and 300 K, indicating an efficient
             energy transfer process. However, for excitation energies
             above or below the GaN bound exciton energy, the decaying
             luminescence indicates excitation wavelength- and
             temperature-dependent energy transfer influenced by
             intrinsic and Eu3+-related defects.},
   Doi = {10.1063/1.1861132},
   Key = {2005ApPhL..86e1110P}
}

@article{Peng:2005p1283,
   Author = {Peng, HY and Lee, CW and Everitt, HO and Lee, DS and Steckl,
             AJ and Zavada, JM},
   Title = {Effect of optical excitation energy on the red luminescence
             of Eu3+ in GaN},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {5},
   Pages = {--},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2005},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000086000005051110000001&idtype=cvips&gifs=yes},
   Abstract = {Photoluminescence (PL) excitation spectroscopy mapped the
             photoexcitation wavelength dependence of the red
             luminescence (D-5(0) --> F-7(2)) from GaN:Eu. Time-resolved
             PL measurements revealed that for excitation at the GaN
             bound exciton energy, the decay transients are almost
             temperature insensitive between 86 K and 300 K, indicating
             an efficient energy transfer process. However, for
             excitation energies above or below the GaN bound exciton
             energy, the decaying luminescence indicates excitation
             wavelength- and temperature-dependent energy transfer
             influenced by intrinsic and Eu3+-related defects. (C) 2005
             American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1861132},
   Key = {Peng:2005p1283}
}

@article{Wellenius:2010eb,
   Author = {Wellenius, P and Smith, ER and Wu, PC and Everitt, HO and Muth,
             JF},
   Title = {Effect of oxygen pressure on the structure and luminescence
             of Eu-doped Gd2O3 thin films},
   Journal = {Physica Status Solidi (A) Applications and Materials
             Science},
   Volume = {207},
   Number = {8},
   Pages = {1949-1953},
   Organization = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27606 USA},
   Institution = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27606 USA},
   Year = {2010},
   Month = {August},
   ISSN = {1862-6300},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000281691300030},
   Abstract = {Europium-doped gadolinium oxide (Gd2O3) thin films were
             deposited on sapphire substrates by pulsed laser deposition
             (PLD). The effect of oxygen pressure during deposition on
             the structure of the thin films, investigated by
             transmission electron microscopy (TEM) and X-ray diffraction
             (XRD), was correlated to photoluminescence spectra. The
             polycrystalline films, like the one deposited in 5 mTorr
             oxygen environment, were primarily monoclinic phase; however
             the rarer cubic phase was achieved at 50 mTorr pressure.
             Time-integrated and time-resolved photoluminescence (TIPL
             and TRPL) spectra of the bright D-5(0) to F-7(2) radiative
             transition revealed how the differing host material phases
             altered the local environment of the Eu dopants. (c) 2010
             WILEY-VCH Verlag GmbH {\&} Co. KGaA, Weinheim},
   Language = {English},
   Doi = {10.1002/pssa.201026071},
   Key = {Wellenius:2010eb}
}

@article{Wellenius:2009p3824,
   Author = {Wellenius, Patrick and Muth, John F and Wu, Pae C and Everitt, Henry O and Smith, Eric R},
   Title = {Effect of Oxygen Pressure on the Structure and Luminescence
             of Europium Doped Gadolinium Oxide Thin Films},
   Journal = {American Physical Society},
   Pages = {21015},
   Year = {2009},
   Month = {March},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009APS..MARX21015W&link_type=ABSTRACT},
   Abstract = {Gadolinium oxide has found uses as a dielectric or
             passivation layer for novel III-V materials and devices, but
             more recently has been the subject of study as a rare-earth
             host. It is believed that Gd2O3 makes a good host for these
             dopants due to the similarity in ionic radii between the
             gadolinium ion and the rare-earth dopants. The reported long
             radiative lifetimes of rare earth dopants in this material
             make it interesting for optically pumped laser materials. In
             this study, europium-doped gadolinium oxide (Eu:Gd2O3)
             polycrystalline thin films were deposited on sapphire
             substrates by pulsed laser deposition at 5 and 50 mTorr
             oxygen pressure. Changes in the crystal structure were
             observed by x-ray diffraction and photoluminescence.
             Low-temperature photoluminescence spectra of the ^5D0-^7F0
             and ^7F2 transitions in the europium ion were recorded with
             high resolution. Because the ^5D0-^7F0 transition in
             europium is not subject to fine structure splitting, it
             provides a useful mechanism for investigation of the local
             environment. The ^5D0-^7F2 transition is of interest as it
             results in the most intense emission, making europium doped
             material useful for red light-emitting phosphors. Radiative
             lifetimes of the observed transitions are also
             reported.},
   Key = {Wellenius:2009p3824}
}

@article{Mohanta:2013wp,
   Author = {Mohanta, A and Simmons, JG and Everitt, HO and Shen, G and Margaret Kim,
             S and Kung, P},
   Title = {Effect of pressure and Al doping on structural and optical
             properties of ZnO nanowires synthesized by chemical vapor
             deposition},
   Journal = {Journal of Luminescence},
   Volume = {146},
   Pages = {470-474},
   Year = {2014},
   Month = {February},
   ISSN = {0022-2313},
   url = {http://www.sciencedirect.com/science/article/pii/S0022231313006728},
   Abstract = {Abstract The effect of Al doping concentration and oxygen
             ambient pressure on the structural and optical properties of
             chemical vapor deposition -grown, Al - doped ZnO nanowires
             is studied. As Al doping increases, the strength of the
             broad visible emission band decreases and the UV emission
             increases, but the growth rate depends on the oxygen
             pressure in a complex manner. Together, these behaviors
             suggest that Al doping is effective in reducing the number
             of oxygen vacancies responsible for visible emission,
             especially at low oxygen ambient pressure. The intensities
             and quantum efficiencies of these emission mechanisms are
             discussed in terms of the effect growth and doping
             conditions have on the underlying excitonic decay
             mechanisms.},
   Doi = {10.1016/j.jlumin.2013.10.028},
   Key = {Mohanta:2013wp}
}

@article{Glinka:2009p4820,
   Author = {Glinka, YD and Shahbazyan, TV and Everitt, HO and Roberts, J and Rajagopal, P and Cook, J and Piner, E and Linthicum,
             K},
   Title = {Effect of the surface states on photoluminescence from
             surface GaN/Al0.2Ga0.8N quantum wells},
   Journal = {EPL (Europhysics Letters)},
   Volume = {87},
   Number = {4},
   Pages = {--},
   Organization = {Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev,
             Ukraine},
   Institution = {Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev,
             Ukraine},
   Year = {2009},
   Month = {August},
   ISSN = {0295-5075},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000270146400022&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {We report on photoluminescence (PL) measurements at 85K for
             GaN/Al0.2Ga0.8N surface quantum wells (SQWs) with a width in
             the range of 1.51-2.9 nm. The PL spectra show a redshift
             with decreasing SQW width, in contrast to the blueshift
             normally observed for conventional GaN QWs of the same
             width. The effect is attributed to a strong coupling of SQW
             confined exciton states with surface acceptors. The PL hence
             originates from the recombination of surface-acceptor-bound
             (A(s)(0)X(A)) excitons. Two types of acceptors were
             identified. Copyright (C) EPLA, 2009},
   Language = {English},
   Doi = {10.1209/0295-5075/87/47007},
   Key = {Glinka:2009p4820}
}

@article{2009PhRvB..79k3202G,
   Author = {Glinka, Y D and Everitt, Henry O and Lee, D S and Steckl, A
             J},
   Title = {Effect of Tm3+ -induced defects on the photoexcitation
             energy relaxation in Tm-doped AlxGa1-xN},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {79},
   Number = {11},
   Pages = {113202},
   Organization = {Institute of Physics, National Academy of Sciences of
             Ukraine, Kiev 03028, Ukraine},
   Institution = {Institute of Physics, National Academy of Sciences of
             Ukraine, Kiev 03028, Ukraine},
   Year = {2009},
   Month = {March},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009PhRvB..79k3202G&link_type=ABSTRACT},
   Abstract = {We provide evidence that the Tm3+ -induced defects in
             Tm-doped AlxGa1-xN hosts play a major role in the
             nonradiative transfer of the excitation energy from the I16
             state to the D12 state of Tm3+ ions from which the most
             efficient photoluminescence (PL) transition (465 nm) occurs.
             Once the concentration of the Tm3+ -induced defects
             decreases with increasing x , the PL transitions starting
             from the I16 state (298, 357, 395, 530, and 785 nm) may be
             significantly enhanced. It is shown that the indirect
             excitation of the I16 state results from the Auger-type
             energy transfer due to the nonradiative band-to-band
             recombinations in the AlxGa1-xN host of a given x . In
             contrast, the PL transitions starting from the G14 level
             (479 and 807 nm) can be excited through either an indirect
             or a direct regime. In both cases the G14 level is populated
             by the radiative relaxation of the higher energy excited
             states I16 , P30 , P31 , and P32 of Tm3+
             ions.},
   Doi = {10.1103/PhysRevB.79.113202},
   Key = {2009PhRvB..79k3202G}
}

@article{Glinka:2009p1269,
   Author = {Glinka, Y D and Everitt, H O and Lee, D S and Steckl, A
             J},
   Title = {Effect of Tm3+-induced defects on the photoexcitation energy
             relaxation in Tm-doped AlxGa1-xN},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {79},
   Number = {11},
   Pages = {--},
   Organization = {Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev,
             Ukraine},
   Institution = {Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev,
             Ukraine},
   Year = {2009},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000079000011113202000001&idtype=cvips&gifs=yes},
   Abstract = {We provide evidence that the Tm3+-induced defects in
             Tm-doped AlxGa1-xN hosts play a major role in the
             nonradiative transfer of the excitation energy from the
             I-1(6) state to the D-1(2) state of Tm3+ ions from which the
             most efficient photoluminescence (PL) transition (465 nm)
             occurs. Once the concentration of the Tm3+-induced defects
             decreases with increasing x, the PL transitions starting
             from the I-1(6) state (298, 357, 395, 530, and 785 nm) may
             be significantly enhanced. It is shown that the indirect
             excitation of the I-1(6) state results from the Auger-type
             energy transfer due to the nonradiative band-to-band
             recombinations in the AlxGa1-xN host of a given x. In
             contrast, the PL transitions starting from the (1)G(4) level
             (479 and 807 nm) can be excited through either an indirect
             or a direct regime. In both cases the (1)G(4) level is
             populated by the radiative relaxation of the higher energy
             excited states I-1(6), P-3(0), P-3(1), and P-3(2) of Tm3+
             ions.},
   Language = {English},
   Doi = {10.1103/PhysRevB.79.113202},
   Key = {Glinka:2009p1269}
}

@article{2010PhRvB..81k5318F,
   Author = {Foreman, John V and Everitt, Henry O and Yang, J and McNicholas, T and Liu, J},
   Title = {Effects of reabsorption and spatial trap distributions on
             the radiative quantum efficiencies of ZnO},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {81},
   Number = {1},
   Pages = {115318},
   Organization = {Department of Physics, Duke University, Durham, North
             Carolina 27708, USA and U.S. Army Aviation and Missile
             Research, Development, and Engineering Center, Redstone
             Arsenal, Alabama 35898, USA},
   Institution = {Department of Physics, Duke University, Durham, North
             Carolina 27708, USA and U.S. Army Aviation and Missile
             Research, Development, and Engineering Center, Redstone
             Arsenal, Alabama 35898, USA},
   Year = {2010},
   Month = {March},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010PhRvB..81k5318F&link_type=ABSTRACT},
   Abstract = {Ultrafast time-resolved photoluminescence spectroscopy
             following one- and two-photon excitations of ZnO powder is
             used to gain unprecedented insight into the surprisingly
             high external quantum efficiency of its ``green'' defect
             emission band. The role of exciton diffusion, the effects of
             reabsorption, and the spatial distributions of radiative and
             nonradiative traps are comparatively elucidated for the
             ultraviolet excitonic and ``green'' defect emission bands in
             both unannealed nanometer-sized ZnO powders and annealed
             micrometer-sized ZnO:Zn powders. We find that the primary
             mechanism limiting quantum efficiency is surface
             recombination because of the high density of nonradiative
             surface traps in these powders. It is found that unannealed
             ZnO has a high density of bulk nonradiative traps as well,
             but the annealing process reduces the density of these bulk
             traps while simultaneously creating a high density of
             green-emitting defects near the particle surface. The data
             are discussed in the context of a simple rate equation model
             that accounts for the quantum efficiencies of both emission
             bands. The results indicate how defect engineering could
             improve the efficiency of ultraviolet-excited ZnO:Zn-based
             white light phosphors.},
   Doi = {10.1103/PhysRevB.81.115318},
   Key = {2010PhRvB..81k5318F}
}

@article{Foreman:2010p5575,
   Author = {Foreman, JV and Everitt, HO and Yang, J and McNicholas, T and Liu,
             J},
   Title = {Effects of reabsorption and spatial trap distributions on
             the radiative quantum efficiencies of ZnO},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {81},
   Number = {11},
   Pages = {--},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2010},
   ISSN = {1098-0121},
   url = {http://hdl.handle.net/10161/3240 Duke open
             access},
   Abstract = {Ultrafast time-resolved photoluminescence spectroscopy
             following one- and two-photon excitations of ZnO powder is
             used to gain unprecedented insight into the surprisingly
             high external quantum efficiency of its "green" defect
             emission band. The role of exciton diffusion, the effects of
             reabsorption, and the spatial distributions of radiative and
             nonradiative traps are comparatively elucidated for the
             ultraviolet excitonic and "green" defect emission bands in
             both unannealed nanometer-sized ZnO powders and annealed
             micrometer-sized ZnO:Zn powders. We find that the primary
             mechanism limiting quantum efficiency is surface
             recombination because of the high density of nonradiative
             surface traps in these powders. It is found that unannealed
             ZnO has a high density of bulk nonradiative traps as well,
             but the annealing process reduces the density of these bulk
             traps while simultaneously creating a high density of
             green-emitting defects near the particle surface. The data
             are discussed in the context of a simple rate equation model
             that accounts for the quantum efficiencies of both emission
             bands. The results indicate how defect engineering could
             improve the efficiency of ultraviolet-excited ZnO:Zn-based
             white light phosphors. © 2010 The American Physical
             Society.},
   Language = {English},
   Doi = {10.1103/PhysRevB.81.115318},
   Key = {Foreman:2010p5575}
}

@article{Foreman:2009vi,
   Author = {Foreman, John V and Everitt, Henry O and Yang, J H and McNicholas, T and Liu, J P},
   Title = {Effects of reabsorption and spatial trap distributions on
             the radiative quantum efficiencies of ZnO},
   Journal = {arXiv},
   Organization = {Department of Physics, Duke University},
   Institution = {Department of Physics, Duke University},
   Year = {2009},
   Month = {August},
   url = {http://arxiv.org/abs/0904.4201},
   Abstract = {Ultrafast time-resolved photoluminescence spectroscopy
             following one- and two-photon excitation of ZnO powder is
             used to gain unprecedented insight into the surprisingly
             high external quantum efficiency of its "green" defect
             emission band. The role of exciton diffusion, the effects of
             reabsorption, and the spatial distributions of radiative and
             nonradiative traps are comparatively elucidated for the
             ultraviolet excitonic and "green" defect emission bands in
             both unannealed, nanometer-sized ZnO powders and annealed,
             micrometer-sized ZnO:Zn powders. We find that the primary
             mechanism limiting quantum efficiency is surface
             recombination because of the high density of nonradiative
             surface traps in these powders. It is found that unannealed
             ZnO has a high density of bulk nonradiative traps as well,
             but the annealing process reduces the density of these bulk
             traps while simultaneously creating a high density of
             green-emitting defects near the particle surface. The data
             are discussed in the context of a simple rate equation model
             that accounts for the quantum efficiencies of both emission
             bands. The results indicate how defect engineering could
             improve the efficiency of ultraviolet-excited ZnO:Zn-based
             white light phosphors.},
   Key = {Foreman:2009vi}
}

@article{Scherer:1999cf,
   Author = {Scherer, A and Doll, T and Yablonovitch, E and Everitt, HO and Higgins,
             JA},
   Title = {Electromagnetic crystal structures, design, synthesis, and
             applications},
   Journal = {Journal of Lightwave Technology},
   Volume = {17},
   Number = {11},
   Pages = {1928-1930},
   Year = {1999},
   Month = {November},
   ISSN = {0733-8724},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000083675100001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Abstract A new paradigm has emerged in which the band
             structure concepts of solid-state physics are applied to
             electromagnetics. This has led to a profusion of scientific
             creativity as new forms of electromagnetic crystal
             structures are invented for radio and microwaves as
             ...},
   Doi = {10.1109/JLT.1999.1673018},
   Key = {Scherer:1999cf}
}

@article{Scherer:1999p1552,
   Author = {Scherer, A and Doll, T and Yablonovitch, E and Everitt,
             Henry O and Higgins, JA},
   Title = {Electromagnetic crystal structures, design, synthesis, and
             applications},
   Journal = {Journal Of Lightwave Technology},
   Volume = {17},
   Number = {11},
   Pages = {1928--1930},
   Organization = {CALTECH, Pasadena, CA 91125 USA},
   Institution = {CALTECH, Pasadena, CA 91125 USA},
   Year = {1999},
   Month = {January},
   url = {http://apps.isiknowledge.com/InboundService.do?Func=Frame&product=WOS&action=retrieve&SrcApp=Papers&UT=000083675100001&SID=2Ccj8oMng2n65nLN754&Init=Yes&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Key = {Scherer:1999p1552}
}

@article{fds314131,
   Author = {Halbur, J and Krommenhoek, PJ and Everitt, HO and Tracy, JB and Jur,
             JS},
   Title = {Enabling of nanoparticle application and function on the
             surface of fibrous textiles by atomic layer
             deposition},
   Journal = {ACS National Meeting Book of Abstracts},
   Volume = {243},
   Year = {2012},
   Month = {March},
   ISSN = {0065-7727},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000324475104033&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Key = {fds314131}
}

@article{Neogi:2003p769,
   Author = {Neogi, A and Everitt, H and Morko, H and Kuroda, T and Tackeuchi,
             A},
   Title = {Enhanced radiative efficiency in gan quantum dots grown by
             molecular beam epitaxy},
   Journal = {IEEE Transactions on Nanotechnology},
   Volume = {2},
   Number = {1},
   Pages = {10-14},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2003},
   Month = {March},
   ISSN = {1536-125X},
   url = {http://dx.doi.org/10.1109/TNANO.2003.808513},
   Abstract = {Self-assembled GaN quantum dots (QDs), grown on AIN by
             molecular beam epitaxy, were investigated by time-resolved
             photoluminescence spectroscopy. We investigate the emission
             mechanism in GaN QDs by comparing the carrier recombination
             dynamics in single and multiple period QDs. At 100 K, the PL
             decay time in single period QD structures is considerably
             shorter than in stacked QDs: Compared to single period QDs,
             the room temperature PL efficiency is considerably enhanced
             in 20 period QDs due to the reduction in nonradiative
             recombination processes.},
   Language = {English},
   Doi = {10.1109/TNANO.2003.808513},
   Key = {Neogi:2003p769}
}

@article{2002PhRvB..66o3305N,
   Author = {Neogi, Arup and Lee, Chang-Won and Everitt, Henry O and Kuroda, Takamasa and Tackeuchi, Atsushi and Yablonovitch,
             Eli},
   Title = {Enhancement of spontaneous recombination rate in a quantum
             well by resonant surface plasmon coupling},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {66},
   Number = {1},
   Pages = {153305},
   Organization = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Institution = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Year = {2002},
   Month = {October},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002PhRvB..66o3305N&link_type=ABSTRACT},
   Abstract = {Using time-resolved photoluminescence measurements, the
             recombination rate in an In0.18Ga0.82N/GaN quantum well (QW)
             is shown to be greatly enhanced when spontaneous emission is
             resonantly coupled to a silver surface plasmon. The rate of
             enhanced spontaneous emission into the surface plasmon was
             as much as 92 times faster than QW spontaneous emission into
             free space. A calculation, based on Fermi's golden rule,
             reveals that the enhancement is very sensitive to silver
             thickness and indicates even greater enhancements are
             possible for QW's placed closer to the surface metal
             coating.},
   Doi = {10.1103/PhysRevB.66.153305},
   Key = {2002PhRvB..66o3305N}
}

@article{Neogi:2002p1547,
   Author = {Neogi, A and Lee, C-W and Everitt, HO and Kuroda, T and Tackeuchi, A and Yablonovitch, E},
   Title = {Enhancement of spontaneous recombination rate in a quantum
             well by resonant surface plasmon coupling},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {66},
   Number = {15},
   Pages = {--},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2002},
   Month = {October},
   url = {http://prola.aps.org/abstract/PRB/v66/i15/e153305},
   Abstract = {Using time-resolved photoluminescence measurements, the
             recombination rate in an In0.18Ga0.82N/GaN quantum well (QW)
             is shown to be greatly enhanced when spontaneous emission is
             resonantly coupled to a silver surface plasmon. The rate of
             enhanced spontaneous emission into the surface plasmon was
             as much as 92 times faster than QW spontaneous emission into
             free space. A calculation, based on Fermi's golden rule,
             reveals that the enhancement is very sensitive to silver
             thickness and indicates even greater enhancements are
             possible for QW's placed closer to the surface metal
             coating.},
   Language = {English},
   Doi = {10.1103/PhysRevB.66.153305},
   Key = {Neogi:2002p1547}
}

@article{2007JAP...102e3506N,
   Author = {Ni, X and Özgür, Ü and Morkoç, H and Liliental-Weber, Z and Everitt,
             HO},
   Title = {Epitaxial lateral overgrowth of a-plane GaN by metalorganic
             chemical vapor deposition},
   Journal = {Journal of Applied Physics},
   Volume = {102},
   Number = {5},
   Pages = {053506-053506},
   Organization = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284, USA},
   Institution = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284, USA},
   Year = {2007},
   Month = {September},
   ISSN = {0021-8979},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007JAP...102e3506N&link_type=ABSTRACT},
   Abstract = {We report on epitaxial lateral overgrowth (ELO) of (1120)
             a-plane GaN by metalorganic chemical vapor deposition.
             Different growth rates of Ga- and N-polar wings together
             with wing tilt create a major obstacle for achieving a
             smooth, fully coalesced surface in ELO a-plane GaN. To
             address this issue a two-step growth method was employed to
             provide a large aspect ratio of height to width in the first
             growth step followed by enhanced lateral growth in the
             second by controlling the growth temperature. By this
             method, the average ratio of Ga- to N-polar wing growth rate
             has been reduced from 4-6 to 1.5-2, which consequently
             reduced the wing-tilt induced height difference between the
             two approaching wings at the coalescence front, thereby
             making their coalescence much easier. Transmission electron
             microscopy showed that the threading dislocation density in
             the wing regions was 1.0×108 cm-2, more than two orders of
             magnitude lower than that in the window regions (4.2×1010
             cm-2). However, a relatively high density of basal stacking
             faults of 1.2×104 cm-1 was still present in the wing
             regions as compared to c -plane GaN, where they are rarely
             observed away from the substrate. Atomic force microscopy
             (AFM) measurements showed two orders of magnitude higher
             density of surface pits in the window than in the wing
             regions, which were considered to be terminated by
             dislocations (partial ones related to stacking faults and
             full ones) on the surface. The existence of basal stacking
             faults was also revealed by AFM measurements on the a-plane
             ELO sample after wet chemical etching in hot H3PO4/H2SO4
             (1:1). The extensions of Ga-polar wings near the meeting
             fronts were almost free of stacking faults. The improvement
             of crystalline quality in the overgrown layer by ELO was
             also verified by near field scanning optical microscopy and
             time-resolved photoluminescence measurements; the former
             showing strongly enhanced luminescence from the wing
             regions, and the latter indicating longer decay times (0.25
             ns) compared to a standard a-plane GaN template (40
             ps).},
   Doi = {10.1063/1.2773692},
   Key = {2007JAP...102e3506N}
}

@article{Ni:2007p1267,
   Author = {Ni, X and Oezguer, Ue and Morko{\c c}, H and Liliental-Weber, Z and Everitt, H O},
   Title = {Epitaxial lateral overgrowth of a-plane GaN by metalorganic
             chemical vapor deposition},
   Journal = {Journal of Applied Physics},
   Volume = {102},
   Number = {5},
   Pages = {--},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2007},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000102000005053506000001&idtype=cvips&gifs=yes},
   Abstract = {We report on epitaxial lateral overgrowth (ELO) of
             (<11(2)over bar0>) a-plane GaN by metalorganic chemical
             vapor deposition. Different growth rates of Ga- and N-polar
             wings together with wing tilt create a major obstacle for
             achieving a smooth, fully coalesced surface in ELO a-plane
             GaN. To address this issue a two-step growth method was
             employed to provide a large aspect ratio of height to width
             in the first growth step followed by enhanced lateral growth
             in the second by controlling the growth temperature. By this
             method, the average ratio of Ga- to N-polar wing growth rate
             has been reduced from 4-6 to 1.5-2, which consequently
             reduced the wing-tilt induced height difference between the
             two approaching wings at the coalescence front, thereby
             making their coalescence much easier. Transmission electron
             microscopy showed that the threading dislocation density in
             the wing regions was 1.0x10(8) cm(-2), more than two orders
             of magnitude lower than that in the window regions
             (4.2x10(10) cm(-2)). However, a relatively high density of
             basal stacking faults of 1.2x10(4) cm(-1) was still present
             in the wing regions as compared to c -plane GaN, where they
             are rarely observed away from the substrate. Atomic force
             microscopy (AFM) measurements showed two orders of magnitude
             higher density of surface pits in the window than in the
             wing regions, which were considered to be terminated by
             dislocations (partial ones related to stacking faults and
             full ones) on the surface. The existence of basal stacking
             faults was also revealed by AFM measurements on the a-plane
             ELO sample after wet chemical etching in hot H3PO4/H2SO4
             (1:1). The extensions of Ga-polar wings near the meeting
             fronts were almost free of stacking faults. The improvement
             of crystalline quality in the overgrown layer by ELO was
             also verified by near field scanning optical microscopy and
             time-resolved photoluminescence measurements; the former
             showing strongly enhanced luminescence from the wing
             regions, and the latter indicating longer decay times (0.25
             ns) compared to a standard a-plane GaN template (40 ps). (C)
             2007 American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.2773692},
   Key = {Ni:2007p1267}
}

@article{fds314065,
   Author = {Teke, A and Özgür, Ü and Doğan, S and Gu, X and Morkoç, H and Nemeth,
             B and Nause, J and Everitt, HO},
   Title = {Excitonic fine structure and recombination dynamics in
             single-crystalline},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {70},
   Number = {19},
   Year = {2004},
   Month = {November},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.70.195207},
   Doi = {10.1103/PhysRevB.70.195207},
   Key = {fds314065}
}

@article{2004PhRvB..70s5207T,
   Author = {Teke, A and {\"O}zg{\"u}r, {\"U}mit and Do{\u g}an, S and Gu, X and Morko{\c c}, H and Nemeth, B and Nause, J and Everitt, Henry O},
   Title = {Excitonic fine structure and recombination dynamics in
             single-crystalline ZnO},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {70},
   Number = {19},
   Pages = {195207},
   Organization = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284, USA},
   Institution = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284, USA},
   Year = {2004},
   Month = {November},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004PhRvB..70s5207T&link_type=ABSTRACT},
   Abstract = {The optical properties of a high quality bulk ZnO ,
             thermally post treated in a forming gas environment are
             investigated by temperature dependent continuous wave and
             time-resolved photoluminescence (PL) measurements. Several
             bound and free exciton transitions along with their first
             excited states have been observed at low temperatures, with
             the main neutral-donor-bound exciton peak at 3.3605eV having
             a linewidth of 0.7meV and dominating the PL spectrum at 10K
             . This bound exciton transition was visible only below 150K
             , whereas the A-free exciton transition at 3.3771eV
             persisted up to room temperature. A-free exciton binding
             energy of 60meV is obtained from the position of the excited
             states of the free excitons. Additional intrinsic and
             extrinsic fine structures such as polariton, two-electron
             satellites, donor-acceptor pair transitions, and
             longitudinal optical-phonon replicas have also been observed
             and investigated in detail. Time-resolved PL measurements at
             room temperature reveal a biexponential decay behavior with
             typical decay constants of ˜170 and ˜864ps for the
             as-grown sample. Thermal treatment is observed to increase
             the carrier lifetimes when performed in a forming gas
             environment.},
   Doi = {10.1103/PhysRevB.70.195207},
   Key = {2004PhRvB..70s5207T}
}

@article{Teke:2004p1284,
   Author = {Teke, A and {\"O}zg{\"u}r, Umit and Do{\u g}an, S and Gu, X and Morko{\c c}, H and Nemeth, B and Nause, JE and Everitt,
             HO},
   Title = {Excitonic fine structure and recombination dynamics in
             single-crystalline ZnO},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {70},
   Number = {19},
   Pages = {--},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2004},
   url = {http://prola.aps.org/abstract/PRB/v70/i19/e195207},
   Abstract = {The optical properties of a high quality bulk ZnO, thermally
             post treated in a forming gas environment are investigated
             by temperature dependent continuous wave and time-resolved
             photoluminescence (PL) measurements. Several bound and free
             exciton transitions along with their first excited states
             have been observed at low temperatures, with the main
             neutral-donor-bound exciton peak at 3.3605 eV having a
             linewidth of 0.7 meV and dominating the PL spectrum at 10 K.
             This bound exciton transition was visible only below 150 K,
             whereas the A-free exciton transition at 3.3771 eV persisted
             up to room temperature. A-free exciton binding energy of 60
             meV is obtained from the position of the excited states of
             the free excitons. Additional intrinsic and extrinsic fine
             structures such as polariton, two-electron satellites,
             donor-acceptor pair transitions, and longitudinal
             optical-phonon replicas have also been observed and
             investigated in detail. Time-resolved PL measurements at
             room temperature reveal a biexponential decay behavior with
             typical decay constants of similar to170 and similar to864
             ps for the as-grown sample. Thermal treatment is observed to
             increase the carrier lifetimes when performed in a forming
             gas environment.},
   Language = {English},
   Doi = {10.1103/PhysRevB.70.195207},
   Key = {Teke:2004p1284}
}

@article{fds325471,
   Author = {Alabastri, A and Yang, X and Manjavacas, A and Everitt, HO and Nordlander, P},
   Title = {Extraordinary Light-Induced Local Angular Momentum near
             Metallic Nanoparticles.},
   Journal = {ACS Nano},
   Volume = {10},
   Number = {4},
   Pages = {4835-4846},
   Year = {2016},
   Month = {April},
   url = {http://dx.doi.org/10.1021/acsnano.6b01851},
   Abstract = {The intense local field induced near metallic nanostructures
             provides strong enhancements for surface-enhanced
             spectroscopies, a major focus of plasmonics research over
             the past decade. Here we consider that plasmonic
             nanoparticles can also induce remarkably large
             electromagnetic field gradients near their surfaces.
             Sizeable field gradients can excite dipole-forbidden
             transitions in nearby atoms or molecules and provide unique
             spectroscopic fingerprinting for chemical and bimolecular
             sensing. Specifically, we investigate how the local field
             gradients near metallic nanostructures depend on geometry,
             polarization, and wavelength. We introduce the concept of
             the local angular momentum (LAM) vector as a useful figure
             of merit for the design of nanostructures that provide large
             field gradients. This quantity, based on integrated fields
             rather than field gradients, is particularly well-suited for
             optimization using numerical grid-based full wave
             electromagnetic simulations. The LAM vector has a more
             compact structure than the gradient matrix and can be
             straightforwardly associated with the angular momentum of
             the electromagnetic field incident on the plasmonic
             structures.},
   Doi = {10.1021/acsnano.6b01851},
   Key = {fds325471}
}

@article{Li:2008p1261,
   Author = {Li, J and Peng, H and Liu, J and Everitt, HO},
   Title = {Facile gram-scale growth of single-crystalline
             nanotetrapod-assembled ZnO through a rapid
             process},
   Journal = {European Journal of Inorganic Chemistry},
   Number = {20},
   Pages = {3172-3176},
   Organization = {Duke Univ, Dept Chem, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Chem, Durham, NC 27708 USA},
   Year = {2008},
   url = {http://www3.interscience.wiley.com/journal/119814989/abstract?CRETRY=1&SRETRY=0},
   Abstract = {From a rapid combustion and catalyst-free method, pure
             single-crystalline nanotetrapod-assembled bulk nano-ZnO was
             grown on a gram-scale for the first time. The gram-scale
             bulk nano-ZnO is synthesized from ZnO powder with great
             reliability and repeatability, and also a high conversion
             efficiency. All four arms of the nanotetrapods are cone
             shaped and grow in the [001] direction. The
             photoluminescence properties of the nanotetrapod-assembled
             ZnO were studied and a mechanism was suggested for the
             growth of the bulk nanotetrapod-assembled ZnO. © Wiley-VCH
             Verlag GmbH &amp; Co. KGaA, 2008.},
   Language = {English},
   Doi = {10.1002/ejic.200701306},
   Key = {Li:2008p1261}
}

@article{Goyette:1995p1551,
   Author = {Goyette, TM and Guo, W and DeLucia, FC and Swartz, JC and Everitt, HO and Guenther, BD and Brown, ER},
   Title = {Femtosecond demodulation source for high-resolution
             submillimeter spectroscopy},
   Journal = {Applied Physics Letters},
   Volume = {67},
   Number = {25},
   Pages = {3810-3812},
   Organization = {DUKE UNIV,DEPT PHYS,DURHAM,NC 27708},
   Institution = {DUKE UNIV,DEPT PHYS,DURHAM,NC 27708},
   Year = {1995},
   Month = {December},
   url = {http://dx.doi.org/10.1063/1.115391},
   Abstract = {A new continuously tunable submillimeter source for
             spectroscopy and other high-resolution applications has been
             developed. In this source the optical spectrum of a
             mode-locked femtosecond laser is downconverted into the
             submillimeter region by the demodulation process of a
             photoconductive switch. The power generated is subsequently
             radiated into free space by an antenna which is integrated
             along with the switch on low-temperature grown GaAs. The
             very high resolution is ultimately traceable to the cavity
             length of the laser and the stable mode-lock frequency which
             results. Among the most important attributes of the sources
             are straightforward absolute frequency calibration, very
             high spectral purity, and the potential for spectral
             multiplexing. (C) 1995 American Institute of
             Physics.},
   Language = {English},
   Doi = {10.1063/1.115391},
   Key = {Goyette:1995p1551}
}

@article{fds325474,
   Author = {Akyildiz, HI and Lo, M and Dillon, E and Roberts, AT and Everitt, HO and Jur, JS},
   Title = {Formation of novel photoluminescent hybrid materials by
             sequential vapor infiltration into polyethylene
             terephthalate fibers},
   Journal = {Journal of materials research},
   Volume = {29},
   Number = {23},
   Pages = {2817-2826},
   Year = {2014},
   Month = {December},
   url = {http://dx.doi.org/10.1557/jmr.2014.333},
   Doi = {10.1557/jmr.2014.333},
   Key = {fds325474}
}

@article{CROWNOVER:1990p1550,
   Author = {Crownover, RL and Everitt, HO and De Lucia and FC and Skatrud,
             DD},
   Title = {Frequency stability and reproducibility of optically pumped
             far‐infrared lasers},
   Journal = {Applied Physics Letters},
   Volume = {57},
   Number = {27},
   Pages = {2882-2884},
   Organization = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Institution = {USA,RES OFF,RES TRIANGLE PK,NC 27709},
   Year = {1990},
   Month = {December},
   ISSN = {0003-6951},
   url = {http://access.isiproducts.com/custom_images/wok_failed_auth.html},
   Abstract = {Direct measurements of the gain profile of optically pumped
             far-infrared lasers show that large shifts in the laser
             frequency can be caused by the absorption from thermal
             molecules on the laser transition. The absorption shifting
             greatly exacerbates pump frequency deviations, resulting in
             an extreme sensitivity to pump offsets and drifts. This
             pressure-dependent shifting mechanism is not present in
             transversely pumped lasers, which explains their superior
             frequency reproductibility compared to longitudinally pumped
             lasers, and reconciles two apparently conflicting results
             regarding laser stability.},
   Language = {English},
   Doi = {10.1063/1.103765},
   Key = {CROWNOVER:1990p1550}
}

@article{fds324836,
   Author = {Knight, MW and Coenen, T and Yang, Y and Brenny, BJM and Losurdo, M and Brown, AS and Everitt, HO and Polman, A},
   Title = {Gallium plasmonics: deep subwavelength spectroscopic imaging
             of single and interacting gallium nanoparticles.},
   Journal = {ACS Nano},
   Volume = {9},
   Number = {2},
   Pages = {2049-2060},
   Year = {2015},
   Month = {February},
   url = {http://dx.doi.org/10.1021/nn5072254},
   Abstract = {Gallium has recently been demonstrated as a phase-change
             plasmonic material offering UV tunability, facile synthesis,
             and a remarkable stability due to its thin, self-terminating
             native oxide. However, the dense irregular nanoparticle (NP)
             ensembles fabricated by molecular-beam epitaxy make optical
             measurements of individual particles challenging. Here we
             employ hyperspectral cathodoluminescence (CL) microscopy to
             characterize the response of single Ga NPs of various sizes
             within an irregular ensemble by spatially and spectrally
             resolving both in-plane and out-of-plane plasmonic modes.
             These modes, which include hybridized dipolar and
             higher-order terms due to phase retardation and substrate
             interactions, are correlated with finite difference time
             domain (FDTD) electrodynamics calculations that consider the
             Ga NP contact angle, substrate, and native Ga/Si surface
             oxidation. This study experimentally confirms previous
             theoretical predictions of plasmonic size-tunability in
             single Ga NPs and demonstrates that the plasmonic modes of
             interacting Ga nanoparticles can hybridize to produce strong
             hot spots in the ultraviolet. The controlled, robust UV
             plasmonic resonances of gallium nanoparticles are applicable
             to energy- and phase-specific applications such as optical
             memory, environmental remediation, and simultaneous
             fluorescence and surface-enhanced Raman spectroscopies.},
   Doi = {10.1021/nn5072254},
   Key = {fds324836}
}

@article{fds318431,
   Author = {Munasinghe, C and Steckl, A and Nyein, EE and Hömmerich, U and Peng, H and Everitt, H and Fleischman, Z and Dierolf, V and Zavada,
             J},
   Title = {GaN:Eu interrupted growth epitaxy (IGE): Thin film growth
             and electroluminescent devices},
   Journal = {Materials Research Society Symposium - Proceedings},
   Volume = {866},
   Pages = {41-52},
   Year = {2005},
   Month = {December},
   ISBN = {1-55899-819-5},
   Abstract = {The GaN:RE phosphor development plays a major role in the
             GaN:RE AC thick dielectric electroluminescent (TDEL) device
             optimization. In this paper we report on EL devices
             fabricated using Eu-doped GaN red phosphors films grown by
             interrupted growth epitaxy (IGE). IGE consists of a sequence
             of ON/OFF cycles of the Ga and Eu beams, while the N 2
             plasma is kept constant during the entire growth time. IGE
             growth of GaN:Eu resulted in significant enhancement in the
             Eu emission intensity based primarily at 620.5nm. The
             increase in the material crystallinity observed with the IGE
             phosphors appears to be the dominant cause of the emission
             enhancement. Thick dielectric EL devices fabricated on glass
             substrates using IGE-grown GaN:Eu have resulted in luminance
             of ∼ 1000 cd/m 2 . © 2005 Materials Research
             Society.},
   Key = {fds318431}
}

@article{fds325473,
   Author = {Binder, R and Roberts, AT and Kwong, NH and Sandhu, A and Everitt,
             HO},
   Title = {Global -space analysis of electron-phonon interaction in
             graphene and application to -point spectroscopy},
   Journal = {Physical Review B},
   Volume = {93},
   Number = {8},
   Year = {2016},
   Month = {February},
   url = {http://dx.doi.org/10.1103/PhysRevB.93.085414},
   Doi = {10.1103/PhysRevB.93.085414},
   Key = {fds325473}
}

@article{fds325469,
   Author = {Gutierrez, Y and Ortiz, D and Sanz, JM and Saiz, JM and Gonzalez, F and Everitt, HO and Moreno, F},
   Title = {How an oxide shell affects the ultraviolet plasmonic
             behavior of Ga, Mg, and Al nanostructures.},
   Journal = {Optics express},
   Volume = {24},
   Number = {18},
   Pages = {20621-20631},
   Year = {2016},
   Month = {September},
   url = {http://dx.doi.org/10.1364/oe.24.020621},
   Abstract = {The ultraviolet (UV) range presents new challenges for
             plasmonics, with interesting applications ranging from
             engineering to biology. In previous research, gallium,
             aluminum, and magnesium were found to be very promising UV
             plasmonic metals. However, a native oxide shell surrounds
             nanostructures of these metals that affects their plasmonic
             response. Here, through a nanoparticle-oxide core-shell
             model, we present a detailed electromagnetic analysis of how
             oxidation alters the UV-plasmonic response of spherical or
             hemisphere-on-substrate nanostructures made of those metals
             by analyzing the spectral evolution of two parameters: the
             absorption efficiency (far-field analysis) and the
             enhancement of the local intensity averaged over the
             nanoparticle surface (near-field analysis).},
   Doi = {10.1364/oe.24.020621},
   Key = {fds325469}
}

@article{fds325472,
   Author = {Reish, ME and Zhang, Z and Ma, S and Harrison, I and Everitt,
             HO},
   Title = {How Annealing and Charge Scavengers Affect Visible Emission
             from ZnO Nanocrystals},
   Journal = {The Journal of Physical Chemistry C},
   Volume = {120},
   Number = {9},
   Pages = {5108-5113},
   Year = {2016},
   Month = {March},
   url = {http://dx.doi.org/10.1021/acs.jpcc.5b12094},
   Doi = {10.1021/acs.jpcc.5b12094},
   Key = {fds325472}
}

@article{Ozgur:2006bk,
   Author = {Ozgur, U and Litton, CW and Fu, Y and Moon, YT and Yun, F and Everitt, HO and Morkoc, H},
   Title = {Improved structural quality and carrier decay times in GaN
             epitaxy on SiN and TiN porous network templates},
   Journal = {Materials Science Forum},
   Volume = {527-529},
   Pages = {1505-1508},
   Year = {2006},
   ISSN = {0255-5476},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000244227200356&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Abstract Improved structural quality and radiative
             efficiency were observed in GaN thin films grown by
             metalorganic chemical vapor deposition on in situ-formed SiN
             and TiN porous network templates . The room temperature
             carrier decay time of 1.86 ns measured for a
             ...},
   Doi = {10.4028/www.scientific.net/MSF.527-529.1505},
   Key = {Ozgur:2006bk}
}

@article{Ozgur:2005p1281,
   Author = {Özgür, Ü and Fu, Y and Moon, YT and Yun, F and Morkoç, H and Everitt,
             HO},
   Title = {Increased carrier lifetimes in GaN epitaxial films grown
             using SiN and TiN porous network layers},
   Journal = {Journal of Applied Physics},
   Volume = {97},
   Number = {10},
   Pages = {103704-103704},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2005},
   Month = {May},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000097000010103704000001&idtype=cvips&gifs=yes},
   Abstract = {Improved structural quality and radiative efficiency were
             observed in GaN thin films grown by metalorganic chemical
             vapor deposition on SiN and TiN porous network templates.
             The room-temperature decay times obtained from biexponential
             fits to time-resolved photoluminescence data are increased
             with the inclusion of SiN and TiN layers. The carrier
             lifetime of 1.86 ns measured for a TiN network sample is
             slightly longer than that for a 200 mu m-thick high-quality
             freestanding GaN. The linewidth of the asymmetric x-ray
             diffraction (XRD) (10 (1) over bar2) peak decreases
             considerably with the use of SiN and TiN layers, indicating
             the reduction in threading dislocation density. However, no
             direct correlation is yet found between the decay times and
             the XRD linewidths, suggesting that point defect and
             impurity-related nonradiative centers are the main
             parameters affecting the lifetime. (c) 2005 American
             Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1894583},
   Key = {Ozgur:2005p1281}
}

@article{Choi:2008ji,
   Author = {Choi, S and Kim, T-H and Wolter, S and Brown, A and Everitt, HO and Losurdo, M and Bruno, G},
   Title = {Indium adlayer kinetics on the gallium nitride (0001)
             surface: Monitoring indium segregation and
             precursor-mediated adsorption},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {77},
   Number = {11},
   Pages = {115435},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2008},
   ISSN = {1098-0121},
   url = {http://link.aps.org/doi/10.1103/PhysRevB.77.115435},
   Abstract = {Indium kinetics and evidence for indium segregation on the
             GaN (0001) surface are investigated via in situ
             spectroscopic ellipsometry. Indium deposition exhibits two
             stable states at coverages of 1.0 and 1.7 ML within the
             temperature range of 630-688°C. Formation of each layer is
             governed by two kinetic processes: nuclei formation and
             nuclei-mediated layer adsorption. The measured desorption
             activation energies of nuclei of the first (2.04 eV) and
             second (2.33 eV) monolayers are lower than the desorption
             activation energies of the aggregated first (2.64 eV) and
             second (2.53 eV) monolayers, respectively. This suggests
             that adatoms preferentially interact with the nuclei and
             laterally aggregate. © 2008 The American Physical
             Society.},
   Language = {English},
   Doi = {10.1103/PhysRevB.77.115435},
   Key = {Choi:2008ji}
}

@article{Foreman:2007p1262,
   Author = {Foreman, JV and Everitt, HO and Yang, J and Liu, J},
   Title = {Influence of temperature and photoexcitation density on the
             quantum efficiency of defect emission in ZnO
             powders},
   Journal = {Applied Physics Letters},
   Volume = {91},
   Number = {1},
   Pages = {011902},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2007},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000091000001011902000001&idtype=cvips&gifs=yes},
   Abstract = {The effect of laser excitation power density on the
             efficiency of intrinsic defect emission in ZnO powders was
             characterized by varying the laser irradiance over three
             orders of magnitude and monitoring changes in the samples'
             photoluminescence. The external quantum efficiency of the
             visible wavelength, broadband defect photoluminescence was
             found to depend not only on laser irradiance but also on
             temperature and prior annealing conditions. This material
             system is potentially useful as an ultraviolet-photoexcited,
             white light phosphor under low-power excitation (&lt;0.2 W
             cm2) at room temperature and below. © 2007 American
             Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.2753540},
   Key = {Foreman:2007p1262}
}

@article{2012PhRvA..85e2507P,
   Author = {Phillips, DJ and Tanner, EA and De Lucia and FC and Everitt,
             HO},
   Title = {Infrared-terahertz double-resonance spectroscopy of CH F and
             CH Cl at atmospheric pressure},
   Journal = {Physical Review A - Atomic, Molecular, and Optical
             Physics},
   Volume = {85},
   Number = {5},
   Pages = {52507--},
   Organization = {Kratos--Digital Fusion, 4904 Research Drive, Huntsville,
             Alabama 35805, USA},
   Institution = {Kratos--Digital Fusion, 4904 Research Drive, Huntsville,
             Alabama 35805, USA},
   Year = {2012},
   Month = {May},
   ISSN = {1050-2947},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012PhRvA..85e2507P&link_type=ABSTRACT},
   Abstract = {A method for highly selective remote sensing of atmospheric
             trace polar molecular gases is described. Based on
             infrared-terahertz double-resonance spectroscopic
             techniques, the molecule-specific coincidence between the
             lines of a CO2 laser and rotational-vibrational molecular
             absorption transitions provide two dimensions of recognition
             specificity: infrared coincidence frequency and the
             corresponding terahertz frequency whose absorption strength
             is modulated by the laser. Atmospheric pressure broadening
             expands the molecular recognition ``specificity matrix'' by
             simultaneously relaxing the infrared coincidence requirement
             and strengthening the corresponding terahertz signature.
             Representative double-resonance spectra are calculated for
             prototypical molecules CH3F and CH3Cl and their principal
             isotopomers from which a heuristic model is developed to
             estimate the specificity matrix and double-resonance
             signature strength for any polar molecule.},
   Language = {English},
   Doi = {10.1103/PhysRevA.85.052507},
   Key = {2012PhRvA..85e2507P}
}

@inproceedings{Phillips:kr,
   Author = {Phillips, DJ and Tanner, EA and Everitt, HO and Medvedev, IR and Neese,
             CF and Holt, J and De Lucia and FC},
   Title = {Infrared/Terahertz Double Resonance for Chemical Remote
             Sensing: Signatures and Performance Predictions},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {7671},
   Pages = {76710F--76710F--12},
   Booktitle = {Terahertz Physics, Devices, and Systems IV: Advanced
             Applications in Industry and Defense},
   Publisher = {SPIE},
   Year = {2010},
   url = {http://link.aip.org/link/PSISDG/v7671/i1/p76710F/s1&Agg=doi},
   Abstract = {Single resonance chemical remote sensing, such as
             Fourier-transform infrared spectroscopy, has limited
             recognition specificity because of atmospheric pressure
             broadening. Active interrogation techniques promise much
             greater chemical recognition that can overcome the limits
             imposed by atmospheric pressure broadening. Here we
             introduce infrared -- terahertz (IR/THz) double resonance
             spectroscopy as an active means of chemical remote sensing
             that retains recognition specificity through rare,
             molecule-unique coincidences between IR molecular absorption
             and a line-tunable CO2 excitation laser. The laser-induced
             double resonance is observed as a modulated THz spectrum
             monitored by a THz transceiver. As an example, our analysis
             indicates that a 1 ppm cloud of CH3F 100 m thick can be
             detected at distances up to 1 km using this
             technique.},
   Doi = {10.1117/12.853309},
   Key = {Phillips:kr}
}

@article{2012arXiv1202.0595P,
   Author = {Phillips, Dane J and Tanner, Elizabeth A and de Lucia, Frank
             C and Everitt, Henry O},
   Title = {Infrared/Terahertz double resonance spectroscopy of CH3F and
             CH3Cl at atmospheric pressure},
   Journal = {arXiv.org},
   Pages = {595},
   Year = {2012},
   Month = {February},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012arXiv1202.0595P&link_type=ABSTRACT},
   Abstract = {A new method for highly selective remote sensing of
             atmospheric trace polar molecular gases is described. Based
             on infrared/terahertz double resonance spectroscopic
             techniques, the molecule- specific coincidence between the
             lines of a CO2 laser and rotational-vibrational molecular
             absorption transitions provide two dimensions of recognition
             specificity: infrared coincidence frequency and the
             corresponding terahertz frequency whose absorption strength
             is modulated by the laser. Atmospheric pressure broadening
             expands the molecular recognition "specificity matrix" by
             simultaneously relaxing the infrared coincidence requirement
             and strengthening the corresponding terahertz signature.
             Representative double resonance spectra are calculated for
             prototypical molecules CH3F and CH3Cl and their principal
             isotopomers, from which a heuristic model is developed to
             estimate the specificity matrix and double resonance
             signature strength for any polar molecule.},
   Key = {2012arXiv1202.0595P}
}

@article{fds314088,
   Author = {Phillips, DJ and Tanner, EA and Everitt, HO and De Lucia,
             FC},
   Title = {Infrared/Terahertz Double Resonance Spectroscopy Remote
             Sensing},
   Journal = {International Conference on Infrared, Millimeter, and
             Terahertz Waves},
   Year = {2011},
   ISSN = {2162-2027},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330296300360&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Key = {fds314088}
}

@article{Choi:2007p1278,
   Author = {Choi, S and Kim, T-H and Everitt, HO and Brown, A and Losurdo, M and Bruno,
             G and Moto, A},
   Title = {Kinetics of gallium adlayer adsorption/desorption on polar
             and nonpolar GaN surfaces},
   Journal = {Journal of vacuum science & technology. B, Microelectronics
             and nanometer structures : processing, measurement, and
             phenomena : an official journal of the American Vacuum
             Society},
   Volume = {25},
   Number = {3},
   Pages = {969-973},
   Publisher = {AVS},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2007},
   ISSN = {1071-1023},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000025000003000969000001&idtype=cvips&gifs=yes},
   Abstract = {Spectroscopic ellipsometry installed on a GEN-II plasma
             assisted molecular beam epitaxy machine has been shown to be
             an effective in situ real time tool for monitoring the
             kinetics of gallium adlayer adsorption/desorption on the GaN
             surface. In this work, the authors present data on the study
             of Ga adsorption/desorption on polar c -plane GaN (0001) and
             nonpolar m -plane GaN (1-100) surfaces for Ga beam
             equivalent pressures in the range of 8.96× 10-8 -1.86×
             10-7 Torr, Ga pulses in the range of 5-360 s, and for
             substrate temperatures between 650 and 750 °C. © 2007
             American Vacuum Society.},
   Language = {English},
   Doi = {10.1116/1.2720856},
   Key = {Choi:2007p1278}
}

@article{Choi:2006iy,
   Author = {Choi, S and Kim, T-H and Brown, A and Everitt, HO and Losurdo, M and Bruno,
             G and Moto, A},
   Title = {Kinetics of gallium adsorption and desorption on (0001)
             gallium nitride surfaces},
   Journal = {Applied Physics Letters},
   Volume = {89},
   Number = {18},
   Pages = {181915--181915},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2006},
   ISSN = {0003-6951},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000089000018181915000001&idtype=cvips&gifs=yes},
   Abstract = {In situ spectroscopic ellipsometry kinetic characterization
             is used to monitor the behavior of Ga atoms during and after
             Ga flux impingement upon a (0001) GaN surface at various
             temperatures in the range of 680-750 °C. The observed
             saturation of the pseudodielectric function verifies the
             existence of a critical thickness for the Ga wetting layer,
             while the observed desorption delay after the Ga flux is
             terminated indicates the presence of two Ga phases, one
             acting as a Ga reservoir to compensate the desorption of the
             wetting layer until the other phase is depleted. © 2006
             American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.2372744},
   Key = {Choi:2006iy}
}

@article{Foreman:2013ij,
   Author = {Foreman, JV and Jr, SJG and Baughman, WE and Liu, J and Everitt,
             HO},
   Title = {Localized excitons mediate defect emission in ZnO
             powders},
   Journal = {Journal of Applied Physics},
   Volume = {113},
   Number = {13},
   Pages = {133513},
   Year = {2013},
   Month = {April},
   ISSN = {0021-8979},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000317238000019&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Language = {English},
   Doi = {10.1063/1.4798359},
   Key = {Foreman:2013ij}
}

@article{Ozgur:2005p1286,
   Author = {Özgür, U and Fu, Y and Moon, YT and Yun, F and Morko̧, H and Everitt,
             HO and Park, SS and Lee, KY},
   Title = {Long carrier lifetimes in GaN epitaxial layers grown using
             TiN porous network templates},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {23},
   Pages = {1-3},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2005},
   Month = {June},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000086000023232106000001&idtype=cvips&gifs=yes},
   Abstract = {Improved structural quality and radiative efficiency were
             observed in GaN thin films grown by metalorganic chemical
             vapor deposition on TiN porous network templates formed by
             in situ thermal annealing of Ti in ammonia. The
             room-temperature decay times obtained from biexponential
             fits to time-resolved photoluminescence data are longer than
             ever reported for GaN. The carrier lifetime of 1.86 ns
             measured for a TiN network sample is slightly longer than
             that for a 200 μm thick high-quality freestanding GaN. The
             linewidth of the asymmetric x-ray diffraction (XRD) (10 1-
             2) peak decreases considerably with the use of TiN layer and
             with increasing in situ annealing time, indicating the
             reduction in threading dislocation density. However, no
             direct correlation is yet found between the decay times and
             the XRD linewidths, suggesting that point defect and
             impurity related nonradiative centers are the main
             parameters affecting the lifetime. © 2005 American
             Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1944903},
   Key = {Ozgur:2005p1286}
}

@article{2005ApPhL..86w2106O,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Fu, Y and Moon, Y. T. and Yun, F and Morko{\c c}, H and Everitt, Henry O and Park, S S and Lee, K Y},
   Title = {Long carrier lifetimes in GaN epitaxial layers grown using
             TiN porous network templates},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {23},
   Pages = {2106},
   Organization = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284},
   Institution = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284},
   Year = {2005},
   Month = {June},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005ApPhL..86w2106O&link_type=ABSTRACT},
   Abstract = {Improved structural quality and radiative efficiency were
             observed in GaN thin films grown by metalorganic chemical
             vapor deposition on TiN porous network templates formed by
             in situ thermal annealing of Ti in ammonia. The
             room-temperature decay times obtained from biexponential
             fits to time-resolved photoluminescence data are longer than
             ever reported for GaN. The carrier lifetime of 1.86 ns
             measured for a TiN network sample is slightly longer than
             that for a 200 $\mu$m thick high-quality freestanding GaN.
             The linewidth of the asymmetric x-ray diffraction (XRD)
             (1012) peak decreases considerably with the use of TiN layer
             and with increasing in situ annealing time, indicating the
             reduction in threading dislocation density. However, no
             direct correlation is yet found between the decay times and
             the XRD linewidths, suggesting that point defect and
             impurity related nonradiative centers are the main
             parameters affecting the lifetime.},
   Doi = {10.1063/1.1944903},
   Key = {2005ApPhL..86w2106O}
}

@article{2007ApPhL..90d1107X,
   Author = {Xie, J and Ozgur, U and Fu, Y and Ni, X and Morkoc, H and Inoki, CK and Kuan,
             TS and Foreman, JV and Everitt, HO},
   Title = {Low dislocation densities and long carrier lifetimes in GaN
             thin films grown on a SiNix nanonetwork},
   Journal = {Applied Physics Letters},
   Volume = {90},
   Number = {4},
   Pages = {1107},
   Organization = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284},
   Institution = {Department of Electrical Engineering, Virginia Commonwealth
             University, Richmond, Virginia 23284},
   Year = {2007},
   Month = {January},
   ISSN = {0003-6951},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000243789600007&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Significant improvement of structural and optical qualities
             of GaN thin films on sapphire substrates was achieved by
             metal organic chemical vapor deposition with in situ SiNx
             nanonetwork. Transmission electron microscope (TEM) studies
             revealed that screw- and edge-type dislocations were reduced
             to 4.4×107 and 1.7×107 cm-2, respectively, for a
             ~5.5-$\mu$m-thick layer. Furthermore, room temperature
             carrier lifetimes of 2.22 and 2.49 ns were measured by
             time-resolved photoluminescence (TRPL) for samples
             containing single and double SiNx network layers,
             respectively, representing a significant improvement over
             the previous studies. The consistent trends among the TEM,
             x-ray diffraction, and TRPL measurements suggest that in
             situ SiNx network reduces line defects effectively as well
             as the point-defect-related nonradiative
             centers.},
   Doi = {10.1063/1.2433754},
   Key = {2007ApPhL..90d1107X}
}

@article{fds318425,
   Author = {Xie, J and Özgür, U and Fu, Y and Ni, X and Morkoç, H and Inoki, CK and Kuan, TS and Foreman, JV and Everitt, HO},
   Title = {Low dislocation density GaN grown by MOCVD with SiNx
             nano-network},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {6473},
   Year = {2007},
   Month = {May},
   ISBN = {0819465860},
   url = {http://dx.doi.org/10.1117/12.706936},
   Abstract = {GaN epitaxial layers grown on SiC and sapphire suffer from
             high density of line and point defects. To address this
             problem, new growth methods using in situ or ex situ
             nano-network masks as dislocation filters have been
             introduced recently. In this work, we report on metalorganic
             chemical vapor deposition (MOCVD) of GaN layers on 2-inch
             sapphire substrates using in situ SiN x nano-networks
             intended for defect reduction. SiN x interlayers with
             different deposition times were employed after ∼2 μm GaN
             grown on sapphire, which was followed by ∼3.5 μm GaN
             overgrowth. With increasing SiN x coverage, full width at
             hall maximum (FWHM) values of (0002) and (101̄2) X-Ray
             diffraction (XRD) peaks monotonously decrease from 252 arc
             sec to 217 arc sec and from 405 ar csec to 211 arc sec,
             respectively for a 5.5 μm thick film. Similarly,
             transmission electron microscopy (TEM) revealed that screw
             and edge type dislocation densities as low as 4.4×10 7 cm
             -2 and 1.7×10 7 cm -2 were achieved. The use of SiN x
             nanonetwork also increases the radiative recombination
             lifetimes measured by time-resolved photoluminescence to 2.5
             ns from less than 0.5 ns in control GaN. We have also
             fabricated Ni/Au Schottky diodes on the overgrown GaN layers
             and the diode performance was found to depend critically on
             SiN x coverage, consistent with TEM, XRD and TRPL results. A
             1.13eV barrier height was achieved when SiN x layer was used
             compared to 0.78 eV without any SiN x nanonetwork.
             Furthermore, the breakdown voltage was improved from 76 V to
             250 V with SiN x nanonetwork.},
   Doi = {10.1117/12.706936},
   Key = {fds318425}
}

@inproceedings{Xie:2007dy,
   Author = {Xie, J and {\"O}zg{\"u}r, {\"U}mit and Fu, Y and Ni, X and Morko{\c c}, H and Inoki, C K and Kuan, T S and Foreman,
             John V and Everitt, Henry O},
   Title = {Low dislocation density GaN grown by MOCVD with SiNx
             nano-network},
   Pages = {647304--647304--8},
   Booktitle = {Gallium Nitride Materials and Devices II},
   Publisher = {SPIE},
   Year = {2007},
   Month = {February},
   url = {http://link.aip.org/link/PSISDG/v6473/i1/p647304/s1&Agg=doi},
   Abstract = {GaN epitaxial layers grown on SiC and sapphire suffer from
             high density of line and point defects. To address this
             problem, new growth methods using in situ or ex situ
             nano-network masks as dislocation filters have been
             introduced recently. In this work, we report on metalorganic
             chemical vapor deposition (MOCVD) of GaN layers on 2-inch
             sapphire substrates using in situ SiNx nano-networks
             intended for defect reduction. SiNx interlayers with
             different deposition times were employed after ~2 $\mu$m GaN
             grown on sapphire, which was followed by ~3.5 $\mu$m GaN
             overgrowth. With increasing SiNx coverage, full width at
             hall maximum (FWHM) values of (0002) and (10 1 2) X-Ray
             diffraction (XRD) peaks monotonously decrease from 252 arc
             sec to 217 arc sec and from 405 ar csec to 211 arc sec,
             respectively for a 5.5 $\mu$m thick film. Similarly,
             transmission electron microscopy (TEM) revealed that screw
             and edge type dislocation densities as low as 4.4×107 cm-2
             and 1.7×107 cm-2 were achieved. The use of SiNx nanonetwork
             also increases the radiative recombination lifetimes
             measured by time-resolved photoluminescence to 2.5 ns from
             less than 0.5 ns in control GaN. We have also fabricated
             Ni/Au Schottky diodes on the overgrown GaN layers and the
             diode performance was found to depend critically on SiNx
             coverage, consistent with TEM, XRD and TRPL results. A
             1.13eV barrier height was achieved when SiNx layer was used
             compared to 0.78 eV without any SiNx nanonetwork.
             Furthermore, the breakdown voltage was improved from 76 V to
             250 V with SiNx nanonetwork.},
   Language = {English},
   Doi = {10.1117/12.706936},
   Key = {Xie:2007dy}
}

@inproceedings{WebbWood:2001p1541,
   Author = {Webb-Wood, G and Ozgur, U and Everitt, HO and Yun, F and Morkoc,
             H},
   Title = {Measurement of AlxGa1-xN refractive indices},
   Journal = {Physica Status Solidi (A)},
   Volume = {188},
   Number = {2},
   Pages = {793-797},
   Booktitle = {Physica Status Solidi A-Applications And Materials
             Science},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2001},
   Month = {November},
   ISSN = {0031-8965},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000172779700067&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Dispersion of the ordinary and extraordinary indices of
             refraction have been measured systematically for wurtzitic
             AlxGa1-xN epitaxial layers with 0 less than or equal to x
             less than or equal to 1.0 throughout the visible wavelength
             region 457 nm < lambda < 800 nm. The dispersion, measured by
             a prism coupling waveguide technique is found to be welt
             described by a first-order Sellmeier dispersion formula
             parameterized as functions of x and lambda.},
   Language = {English},
   Doi = {10.1002/1521-396X(200112)188:2<793::AID-PSSA793>3.3.CO;2-J},
   Key = {WebbWood:2001p1541}
}

@article{fds314059,
   Author = {Heimbeck, MS and Reardon, PJ and Goldberg, J and Einhorn, M and Everitt,
             HO},
   Title = {Multi Detector Terahertz Beam Profiling and Imaging
             Instrument},
   Journal = {International Conference on Infrared, Millimeter, and
             Terahertz Waves},
   Year = {2011},
   ISSN = {2162-2027},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330296300427&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Key = {fds314059}
}

@inproceedings{Ruffin:2011ez,
   Author = {Ruffin, PB and Brantley, CL and Edwards, E and Roberts, JK and Chew, W and Warren, LC and Ashley, PR and Everitt, HO and Webster, E and Foreman,
             JV and Sanghadasa, M and Crutcher, SH and Temmen, MG and Varadan, V and Hayduke, D and Wu, PC and Khoury, CG and Yang, Y and Kim, T-H and Vo-Dinh,
             T and Brown, AS and Callahan, J},
   Title = {Nanotechnology research and development for military and
             industrial applications},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {7980},
   Pages = {798002--798002--17},
   Booktitle = {Nanosensors, Biosensors, and Info-Tech Sensors and Systems
             2011},
   Publisher = {SPIE},
   Year = {2011},
   ISSN = {0277-786X},
   url = {http://link.aip.org/link/PSISDG/v7980/i1/p798002/s1&Agg=doi},
   Abstract = {Researchers at the Army Aviation and Missile Research,
             Development, and Engineering Center (AMRDEC) have initiated
             multidiscipline efforts to develop nano-based structures and
             components for insertion into advanced missile, aviation,
             and autonomous air and ground systems. The objective of the
             research is to exploit unique phenomena for the development
             of novel technology to enhance warfighter capabilities and
             produce precision weapons. The key technology areas that the
             authors are exploring include nano-based microsensors,
             nano-energetics, nano-batteries, nano-composites, and
             nano-plasmonics. By integrating nano-based devices,
             structures, and materials into weaponry, the Army can
             revolutionize existing (and future) missile systems by
             significantly reducing the size, weight and cost. The major
             research thrust areas include the development of chemical
             sensors to detect rocket motor off-gassing and toxic
             industrial chemicals; the development of highly
             sensitive/selective, self-powered miniaturized acoustic
             sensors for battlefield surveillance and reconnaissance; the
             development of a minimum signature solid propellant with
             increased ballistic and physical properties that meet
             insensitive munitions requirements; the development of
             nano-structured material for higher voltage thermal
             batteries and higher energy density storage; the development
             of advanced composite materials that provide high frequency
             damping for inertial measurement units' packaging; and the
             development of metallic nanostructures for ultraviolet
             surface enhanced Raman spectroscopy. The current status of
             the overall AMRDEC Nanotechnology research efforts is
             disclosed in this paper. Critical technical challenges, for
             the various technologies, are presented. The authors'
             approach for overcoming technical barriers and achieving
             required performance is also discussed. Finally, the roadmap
             for each technology, as well as the overall program, is
             presented. © 2011 Copyright Society of Photo-Optical
             Instrumentation Engineers (SPIE).},
   Language = {English},
   Doi = {10.1117/12.878970},
   Key = {Ruffin:2011ez}
}

@article{Ozgur:2006p1275,
   Author = {Özgür, Ü and Ni, X and Fu, Y and Morkoç, H and Everitt,
             HO},
   Title = {Near-field scanning optical microscopy and time-resolved
             optical characterization of epitaxial lateral overgrown
             c-plane and a-plane GaN},
   Journal = {Applied Physics Letters},
   Volume = {89},
   Number = {26},
   Pages = {262117-262117},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2006},
   Month = {December},
   ISSN = {0003-6951},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000089000026262117000001&idtype=cvips&gifs=yes},
   Abstract = {Epitaxial lateral overgrowth (ELO) was employed for both
             c-plane and a-plane GaN layers on sapphire, and a more
             pronounced optical improvement was observed for the a-plane
             GaN as evidenced by the significantly increased band edge
             photoluminescence (PL). Room temperature near-field scanning
             optical microscopy studies explicitly showed enhanced
             optical quality in the wing regions of the overgrown GaN due
             to reduced density of dislocations, and for the a-plane ELO
             GaN sample the wings and the windows were clearly
             discernible from PL mapping. Time-resolved PL measurements
             revealed biexponential decays with time constants that were
             significantly enhanced for the a-plane ELO GaN (tau(1)=0.08
             ns, tau(2)=0.25 ns) when compared to the non-ELO control
             sample but were still much shorter than those for the
             c-plane ELO GaN (tau(1)=0.26 ns, tau(2)=0.90 ns). (c) 2006
             American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.2424677},
   Key = {Ozgur:2006p1275}
}

@article{fds314063,
   Author = {Kumar, S},
   Title = {Operation of terahertz quantum cascade lasers above 160 K
             covering a frequency range of 2-4 THz (Invited
             Paper)},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {8496},
   Year = {2012},
   ISSN = {0277-786X},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000312110600001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Doi = {10.1117/12.929760},
   Key = {fds314063}
}

@article{fds318415,
   Author = {Roberts, AT and Binder, R and Kwong, NH and Golla, D and Cormode, D and LeRoy, BJ and Everitt, HO and Sandhu, A},
   Title = {Optical characterization of electron-phonon interactions at
             the saddle point in graphene.},
   Journal = {Physical Review Letters},
   Volume = {112},
   Number = {18},
   Pages = {187401},
   Year = {2014},
   Month = {May},
   url = {http://dx.doi.org/10.1103/physrevlett.112.187401},
   Abstract = {The role of many-body interactions is experimentally and
             theoretically investigated near the saddle point absorption
             peak of graphene. The time and energy-resolved differential
             optical transmission measurements reveal the dominant role
             played by electron-acoustic phonon coupling in band
             structure renormalization. Using a Born approximation for
             electron-phonon coupling and experimental estimates of the
             dynamic lattice temperature, we compute the differential
             transmission line shape. Comparing the numerical and
             experimental line shapes, we deduce the effective acoustic
             deformation potential to be Deff(ac)≃5  eV. This value
             is in accord with recent theoretical predictions but differs
             from those extracted using electrical transport
             measurements.},
   Doi = {10.1103/physrevlett.112.187401},
   Key = {fds318415}
}

@article{2006ApPhL..88v1906G,
   Author = {Gollakota, P and Dhawan, A and Wellenius, P and Lunardi, LM and Muth,
             JF and Saripalli, YN and Peng, HY and Everitt, HO},
   Title = {Optical characterization of Eu-doped β-Ga2O3 thin
             films},
   Journal = {Applied Physics Letters},
   Volume = {88},
   Number = {22},
   Pages = {221906-221906},
   Organization = {Department of Electrical and Computer Engineering, North
             Carolina State University, Raleigh, North Carolina
             27606},
   Institution = {Department of Electrical and Computer Engineering, North
             Carolina State University, Raleigh, North Carolina
             27606},
   Year = {2006},
   Month = {May},
   ISSN = {0003-6951},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006ApPhL..88v1906G&link_type=ABSTRACT},
   Abstract = {Europium-doped $\beta$-Ga2O3 thin films were grown on
             double-side polished c-axis (0001) sapphire substrates by
             pulsed laser deposition at 850 $\,^{\circ}$C. Transmission
             measurements of the films revealed a sharp band edge with a
             band gap at 5.0 eV. The films exhibited intense red emission
             at 611 nm (2.03 eV) due to the transitions from 5D0 to 7F2
             levels in europium, with intensities that increased with the
             concentration of europium. Time-resolved photoluminescence
             measurements revealed a temperature-insensitive lifetime of
             1.4 ms, which is much longer than the lifetimes of europium
             luminescence observed in GaN hosts.},
   Doi = {10.1063/1.2208368},
   Key = {2006ApPhL..88v1906G}
}

@article{fds318432,
   Author = {Muth, J and Cai, A and Osinsky, A and Everitt, H and Cook, B and Avrutsky,
             I},
   Title = {Optical properties of II-IV-N2 semiconductors},
   Journal = {Materials Research Society Symposium - Proceedings},
   Volume = {831},
   Pages = {745-749},
   Year = {2005},
   ISBN = {1-55899-779-2},
   Key = {fds318432}
}

@article{Tsen:2005p1285,
   Author = {Tsen, KT and Liang, W and Ferry, DK and Lu, H and Schaff, WJ and Özgür,
             Ü and Fu, Y and Moon, YT and Yun, F and Morkoç, H and Everitt,
             HO},
   Title = {Optical studies of carrier dynamics and non-equilibrium
             optical phonons in nitride-based wide bandgap
             semiconductors},
   Journal = {Superlattices and Microstructures},
   Volume = {38},
   Number = {2},
   Pages = {77-114},
   Organization = {Arizona State Univ, Dept Phys {\&} Astron, Tempe, AZ 85287
             USA},
   Institution = {Arizona State Univ, Dept Phys {\&} Astron, Tempe, AZ 85287
             USA},
   Year = {2005},
   Month = {August},
   url = {http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6WXB-4GKWHXN-1&_user=961261&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000049394&_version=1&_urlVersion=0&_userid=961261&md5=268afb4095054fab46874f095c57c9c8},
   Abstract = {Ultrafast optical probes, photoluminescence spectroscopy,
             and Raman spectroscopy have been applied to investigate
             carrier dynamics in nitride-based binary and ternary, and
             dilute nitride semiconductors. Carrier dynamics in the form
             of radiative and non-radiative lifetimes in GaN grown on
             pseudo-in situ TiN and in situ SiN nanonetworks by
             organometallic vapor phase epitaxy have been investigated
             and compared with those for freestanding GaN templates which
             constitute the benchmark values due to the high quality.
             Room temperature carrier lifetimes as long as 1.86 ns could
             be achieved with the use of TiN network templates.
             Time-resolved Raman spectroscopy has been employed to
             investigate the carrier dynamics, carrier transport and
             non-equilibrium optical phonons in In-containing
             nitride-based semiconductors. (1) It has been found that the
             energy loss rate in InxGal-xAsl-yNy is about 64 meV/ps
             suggesting that hot electrons lose their energy primarily to
             the GaAs-like LO phonons in this dilute nitride
             semiconductor. (2) Both the non-equilibrium electron
             distribution and the electron drift velocity in InGaN and
             InN have been measured. These experimental results are
             compared with ensemble Monte Carlo calculations and good
             agreement is found. (3) Our experimental results support the
             small bandgap value for InN (approximately 0.8 eV) and are
             inconsistent with the 0.8 eV luminescence emission being due
             to deep level radiative emission. (C) 2005 Elsevier Ltd. All
             rights reserved.},
   Language = {English},
   Doi = {10.1016/j.spmi.2005.04.004},
   Key = {Tsen:2005p1285}
}

@article{fds325476,
   Author = {Akyildiz, HI and Roberts, AT and Everitt, HO and Jur,
             JS},
   Title = {Optical tuning of poly(ethylene terephthalate) by
             organometallic vapor infiltration},
   Journal = {ACS National Meeting Book of Abstracts},
   Volume = {248},
   Year = {2014},
   Month = {August},
   Key = {fds325476}
}

@article{2010JAP...107j3111W,
   Author = {Wellenius, P and Smith, ER and LeBoeuf, SM and Everitt, HO and Muth,
             JF},
   Title = {Optimal composition of europium gallium oxide thin films for
             device applications},
   Journal = {Journal of Applied Physics},
   Volume = {107},
   Number = {10},
   Pages = {103111-103111},
   Organization = {Department of Electrical and Computer Engineering, North
             Carolina State University, Raleigh, North Carolina 27695,
             USA},
   Institution = {Department of Electrical and Computer Engineering, North
             Carolina State University, Raleigh, North Carolina 27695,
             USA},
   Year = {2010},
   Month = {May},
   ISSN = {0021-8979},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010JAP...107j3111W&link_type=ABSTRACT},
   Abstract = {Europium gallium oxide (EuxGa1-x)2O3 thin films were
             deposited on sapphire substrates by pulsed laser deposition
             with varying Eu content from x=2.4 to 20 mol %. The optical
             and physical effects of high europium concentration on these
             thin films were studied using photoluminescence (PL)
             spectroscopy, x-ray diffraction (XRD), and Rutherford
             backscattering spectrometry. PL spectra demonstrate that
             emission due to the 5D0 to 7FJ transitions in Eu3+ grows
             linearly with Eu content up to 10 mol %. Time-resolved PL
             indicates decay parameters remain similar for films with up
             to 10 mol % Eu. At 20 mol %, however, PL intensity decreases
             substantially and PL decay accelerates, indicative of
             parasitic energy transfer processes. XRD shows films to be
             polycrystalline and beta-phase for low Eu compositions.
             Increasing Eu content beyond 5 mol % does not continue to
             modify the film structure and thus, changes in PL spectra
             and decay cannot be attributed to structural changes in the
             host. These data indicate the optimal doping for
             optoelectronic devices based on (EuxGa1-x)2O3 thin films is
             between 5 and 10 mol %.},
   Doi = {10.1063/1.3319670},
   Key = {2010JAP...107j3111W}
}

@article{Wellenius:2010p5574,
   Author = {Wellenius, P and Smith, E R and LeBoeuf, S M and Everitt, H
             O and Muth, J F},
   Title = {Optimal composition of europium gallium oxide thin films for
             device applications},
   Journal = {Journal of Applied Physics},
   Volume = {107},
   Number = {10},
   Pages = {--},
   Organization = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Institution = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Year = {2010},
   url = {http://jap.aip.org/japiau/v107/i10/p103111_s1},
   Abstract = {Europium gallium oxide (EuxGa1-x)(2)O-3 thin films were
             deposited on sapphire substrates by pulsed laser deposition
             with varying Eu content from x=2.4 to 20 mol %. The optical
             and physical effects of high europium concentration on these
             thin films were studied using photoluminescence (PL)
             spectroscopy, x-ray diffraction (XRD), and Rutherford
             backscattering spectrometry. PL spectra demonstrate that
             emission due to the D-5(0) to F-7(J) transitions in Eu3+
             grows linearly with Eu content up to 10 mol %. Time-resolved
             PL indicates decay parameters remain similar for films with
             up to 10 mol % Eu. At 20 mol %, however, PL intensity
             decreases substantially and PL decay accelerates, indicative
             of parasitic energy transfer processes. XRD shows films to
             be polycrystalline and beta-phase for low Eu compositions.
             Increasing Eu content beyond 5 mol % does not continue to
             modify the film structure and thus, changes in PL spectra
             and decay cannot be attributed to structural changes in the
             host. These data indicate the optimal doping for
             optoelectronic devices based on (EuxGa1-x)(2)O-3 thin films
             is between 5 and 10 mol %. (C) 2010 American Institute of
             Physics. [doi:10.1063/1.3319670]},
   Language = {English},
   Doi = {10.1063/1.3319670},
   Key = {Wellenius:2010p5574}
}

@article{Bergmann:1999p1549,
   Author = {Bergmann, MJ and Ozgur, U and Casey, HC and Everitt, HO and Muth,
             JF},
   Title = {Ordinary and extraordinary refractive indices for AlxGa1-xN
             epitaxial layers},
   Journal = {Applied Physics Letters},
   Volume = {75},
   Number = {1},
   Pages = {67-69},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {1999},
   Month = {July},
   ISSN = {0003-6951},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000081169300023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Dispersion of the ordinary and extraordinary indices of
             refraction for wurtzite AlxGa1-xN epitaxial layers with
             x=0.00, 0.04, 0.08, 0.11, and 0.20 in the range of
             wavelengths 457 < 980 nm were measured via a prism-coupled
             waveguide technique. The quantitative accuracy of x is +/-
             10% and the accuracy of the refractive indices is +/-0.01.
             The dispersion is found to be well described by a 1st-order
             Sellmeier dispersion formula. A simple functional form is
             presented that allows calculation of the refractive indices
             as functions of x and lambda. (C) 1999 American Institute of
             Physics. [S0003-6951(99)04127-3].110679018842056421064663621052149011020184510288699010646855159141030295731022401681083838151072207098783291399817495101579258100901599167527791068013222407076110731534110090160010493040510170510098090757A1995TK75900047GOYE3810950067AT0008086915APPLIED
             PHYSICS LETTERSAPPL PHYS LETTFemtosecond demodulation source
             for high-resolution submillimeter spectroscopy67 (25):
             3810-3812 DEC 18 19953810-3812ArticleEnglishGoyette, TMGuo,
             WDeLucia, FCSwartz, JCEveritt, HOGuenther, BDBrown,
             ERGENERATIONLASERRADIATIONREGIONGoyette, TMOHIO STATE
             UNIV,DEPT PHYS,COLUMBUS,OH 43210OHIO STATE UNIVDEPT
             PHYSCOLUMBUSOHUSA43210DUKE UNIV,DEPT PHYS,DURHAM,NC
             27708DUKE UNIVDEPT PHYSDURHAMNCUSA27708MIT,LINCOLN
             LAB,LEXINGTON,MA 02173MITLINCOLN LABLEXINGTONMAUSA02173USA,RES
             OFF,RES TRIANGLE PK,NC 27709USARES OFFRES TRIANGLE
             PKNCUSA27709A new continuously tunable submillimeter source
             for spectroscopy and other high-resolution applications has
             been developed. In this source the optical spectrum of a
             mode-locked femtosecond laser is downconverted into the
             submillimeter region by the demodulation process of a
             photoconductive switch. The power generated is subsequently
             radiated into free space by an antenna which is integrated
             along with the switch on low-temperature grown GaAs. The
             very high resolution is ultimately traceable to the cavity
             length of the laser and the stable mode-lock frequency which
             results. Among the most important attributes of the sources
             are straightforward absolute frequency calibration, very
             high spectral purity, and the potential for spectral
             multiplexing. (C) 1995 American Institute of
             Physics.255044875318817433933179939764843856569275952850874539298996389356945225516921006714115089963895739067834820580118743965939764854469309747149642350436853357698996389643500682939764867127782274669017569452294302493093976487A1993LR63800013EVER1087930079MH0013403597MOLECULAR
             PHYSICSMOL PHYSTHE TEMPERATURE-DEPENDENCE OF FAST
             VIBRATIONAL-ENERGY TRANSFER PROCESSES IN METHYL-FLUORIDE79
             (5): 1087-1101 AUG 10 19931087-1101ArticleEnglishEVERITT,
             HODELUCIA, FCINFRARED DOUBLE-RESONANCEMILLIMETER-WAVELASERSPECTROSCOPY(CH3F)-C-13DYNAMICSCH3FEVERITT,
             HOUSA,RES OFF,POB 12211,RES TRIANGLE PK,NCUSARES OFF, POB
             12211RES TRIANGLE PKNCUSAOHIO STATE UNIV,DEPT
             PHYS,COLUMBUS,OH 43210OHIO STATE UNIVDEPT
             PHYSCOLUMBUSOHUSA43210The temperature dependencies of two
             fast vibrational energy transfer processes in methyl
             fluoride (CH3F) have been measured between 120 K and 400 K
             by means of time-resolved millimetre/submillimetre-infrared
             double resonance spectroscopy. The first of these processes,
             a resonant vibrational swapping process between the ground
             vibrational state and the nu3 = 1 (nu3) vibrational state,
             effectively transfers population between states of A and E
             symmetry. A rapid increase in cross section with decreasing
             temperature was observed for this process, a result in
             excellent quantitative agreement with semiclassical theory
             of near resonant vibrational collisions. The second process,
             which transfers population between the nu3 and nu6 = 1 (nu6)
             vibrational states, was found experimentally to have a much
             weaker temperature dependence. From this result and from
             additional experimental observations of symmetry
             type-sensitive energy transfer into nu6, the energy transfer
             between nu3 and nu6 was demonstrated to result from a
             'direct' vibrational energy transfer rather than from an
             'indirect' vibrational swap process.605367906858345472467435795935078441142079593506706458566858345658827703702889565016889954651885642872926428729325774361494364463149563751673014757711644954439319653771845351059335937739677467201A1993KK74500013BOWD0280930010JC0000898914JOURNAL
             OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICSJ OPT SOC
             AM BDEVELOPMENT AND APPLICATIONS OF MATERIALS EXHIBITING
             PHOTONIC BAND-GAPS - INTRODUCTION10 (2): 280-280 FEB
             1993280-280Editorial MaterialEnglishBOWDEN, CMDOWLING,
             JPEVERITT, HOBOWDEN, CMUSA,MISSILE COMMAND,CTR RES DEV {\&}
             ENGN,AMSMI RD WS ST,WEAP SCI DIRECTORATE,REDSTONE ARSENAL,AL
             35898USAMISSILE COMMAND, CTR RES DEV {\&} ENGN, AMSMI RD WS
             ST, WEAP SCI DIRECTORATEREDSTONE ARSENALALUSA35898USA,RES
             OFF,RES TRIANGLE PK,NC 27709USARES OFFRES TRIANGLE
             PKNCUSA2770962430842A1992HT47800030GOYE0324920153JT0003019412JOURNAL
             OF MOLECULAR SPECTROSCOPYJ MOL SPECTROSCCOLLISIONS AND
             ROTATIONAL SPECTROSCOPY153 (1-2): 324-339 MAY-JUN
             1992324-339ArticleEnglishGOYETTE, TMMCCORMICK, RIDELUCIA,
             FCEVERITT, HOCO-HEPRESSUREEXCITATIONGOYETTE, TMOHIO STATE
             UNIV,DEPT PHYS,COLUMBUS,OH 43210OHIO STATE UNIVDEPT
             PHYSCOLUMBUSOHUSA43210USA,RES OFF,RES TRIANGLE PK,NC
             27709USARES OFFRES TRIANGLE PKNCUSA2770917006084036536140772467435795935076540467272113950670374132919054328843863482058011280996428729254310549281669462816694934760032598091881644954442648648343000674672013867344854079593508795935097959351069388268A1990EQ50400004CROW2882900057AR0024213743APPLIED
             PHYSICS LETTERSAPPL PHYS LETTFREQUENCY STABILITY AND
             REPRODUCIBILITY OF OPTICALLY PUMPED FAR-INFRARED LASERS57
             (27): 2882-2884 DEC 31 19902882-2884ArticleEnglishCROWNOVER,
             RLEVERITT, HODELUCIA, FCSKATRUD, DDFIR LASERCROWNOVER,
             RLDUKE UNIV,SCH MED,DEPT PHYS,DURHAM,NC 27706DUKE UNIVSCH
             MED, DEPT PHYSDURHAMNCUSA27706USA,RES OFF,RES TRIANGLE PK,NC
             27709USARES OFFRES TRIANGLE PKNCUSA27709Direct measurements
             of the gain profile of optically pumped far-infrared lasers
             show that large shifts in the laser frequency can be caused
             by the absorption from thermal molecules on the laser
             transition. The absorption shifting greatly exacerbates pump
             frequency deviations, resulting in an extreme sensitivity to
             pump offsets and drifts. This pressure-dependent shifting
             mechanism is not present in transversely pumped lasers,
             which explains their superior frequency reproductibility
             compared to longitudinally pumped lasers, and reconciles two
             apparently conflicting results regarding laser
             stability.4958874955690992398143207214612053495159397009006480307640870151642872926428729347398450A1990DE14600016EVER6480900092JH0004248715JOURNAL
             OF CHEMICAL PHYSICSJ CHEM PHYSROTATIONAL ENERGY-TRANSFER IN
             CH3F - THE DELTA-J=N, DELTA-K=0 PROCESSES92 (11): 6480-6491
             JUN 1 19906480-6491ArticleEnglishEVERITT, HODELUCIA,
             FCEVERITT, HODUKE UNIV,DEPT PHYS,DURHAM,NC 27706DUKE
             UNIVDEPT PHYSDURHAMNCUSA27706413140504553604242562629685834555449612910548365349666163772539960536790685834546595258919771958329369152919054336354624541191996190886148205801236772232922361268583456253452745210771350168899546518856428729264287293246794666584117825774361467829031313596321514264354646473373860239319653426486484132499344767762298825549189410A1989T802800015EVER3520890090JH0012921089JOURNAL
             OF CHEMICAL PHYSICSJ CHEM PHYSA TIME-RESOLVED STUDY OF
             ROTATIONAL ENERGY-TRANSFER INTO A AND E SYMMETRY SPECIES OF
             (CH3F)-C-1390 (7): 3520-3527 APR 1 19893520-3527ArticleEnglishEVERITT,
             HODELUCIA, FCEVERITT, HODUKE UNIV,DEPT PHYS,DURHAM,NC
             27706DUKE UNIVDEPT PHYSDURHAMNCUSA2770668583455541192821054836560536790659525891977195854119199619088614820580123677223292236126858345625345274521077134788713314743171950168899642872946428729264287293658411785431054948756572257743614678290313135963215142643373860239319653551096932141891266587910},
   Language = {English},
   Doi = {10.1063/1.124278},
   Key = {Bergmann:1999p1549}
}

@article{Glinka:2009p1730,
   Author = {Glinka, Y D and Everitt, Henry O and Muth, John F and Shahbazyan, T V and Roberts, J and Rajagopal, P and Cook, J and Piner, E and Linthicum, K},
   Title = {Photoluminescence from surface GaN/AlGaN quantum wells:
             Effect of the surface states},
   Journal = {arXiv},
   Volume = {cond-mat.mtrl-sci},
   Year = {2009},
   Month = {January},
   url = {http://arxiv.org/abs/0905.1972v1},
   Keywords = {cond-mat.mtrl-sci},
   Abstract = {We report on photoluminescence (PL) measurements at 85 K for
             GaN/AlGaN surface quantum wells (SQW's) with a width in the
             range of 1.51-2.9 nm. The PL spectra show a redshift with
             decreasing SQW width, in contrast to the blueshift normally
             observed for conventional GaN QW's of the same width. The
             effect is attributed to a strong coupling of SQW confined
             exciton states with surface acceptors. The PL hence
             originates from the recombination of surface-acceptor-bound
             excitons. Two types of acceptors were identified.},
   Key = {Glinka:2009p1730}
}

@article{fds325470,
   Author = {Akyildiz, HI and Stano, KL and Roberts, AT and Everitt, HO and Jur,
             JS},
   Title = {Photoluminescence Mechanism and Photocatalytic Activity of
             Organic-Inorganic Hybrid Materials Formed by Sequential
             Vapor Infiltration.},
   Journal = {Langmuir},
   Volume = {32},
   Number = {17},
   Pages = {4289-4296},
   Year = {2016},
   Month = {May},
   url = {http://dx.doi.org/10.1021/acs.langmuir.6b00285},
   Abstract = {Organic-inorganic hybrid materials formed by sequential
             vapor infiltration (SVI) of trimethylaluminum into polyester
             fibers are demonstrated, and the photoluminescence of the
             fibers is evaluated using a combined UV-vis and
             photoluminescence excitation (PLE) spectroscopy approach.
             The optical activity of the modified fibers depends on
             infiltration thermal processing conditions and is attributed
             to the reaction mechanisms taking place at different
             temperatures. At low temperatures a single excitation band
             and dual emission bands are observed, while, at high
             temperatures, two distinct absorption bands and one emission
             band are observed, suggesting that the physical and chemical
             structure of the resulting hybrid material depends on the
             SVI temperature. Along with enhancing the photoluminescence
             intensity of the PET fibers, the internal quantum efficiency
             also increased to 5-fold from ∼4-5% to ∼24%. SVI
             processing also improved the photocatalytic activity of the
             fibers, as demonstrated by photodeposition of Ag and Au
             metal particles out of an aqueous metal salt solution onto
             fiber surfaces via UVA light exposure. Toward applications
             in flexible electronics, well-defined patterning of the
             metallic materials is achieved by using light masking and
             focused laser rastering approaches.},
   Doi = {10.1021/acs.langmuir.6b00285},
   Key = {fds325470}
}

@article{Porter:2006p1270,
   Author = {Porter, HL and Muth, JF and Narayan, J and Foreman, JV and Everitt,
             HO},
   Title = {Photoluminescence study of ZnO films codoped with nitrogen
             and tellurium},
   Journal = {Journal of Applied Physics},
   Volume = {100},
   Number = {12},
   Pages = {123102-123102},
   Organization = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Institution = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Year = {2006},
   Month = {December},
   ISSN = {0021-8979},
   url = {http://link.aip.org/link/?JAPIAU/100/123102/1},
   Abstract = {Epitaxial ZnO films codoped with tellurium and nitrogen were
             grown by pulsed laser deposition on-axis oriented sapphire
             substrates. The codoping strategy allowed the resistivity of
             the films to be controlled over several orders of magnitude
             and may prove ...},
   Doi = {10.1063/1.2372312},
   Key = {Porter:2006p1270}
}

@article{Wu:2009cma,
   Author = {Wu, Pae C and Losurdo, Maria and Kim, Tong-Ho and Giangregorio, Michelaria and Bruno, Giovanni and Everitt,
             Henry O and Brown, April S},
   Title = {Plasmonic Gallium Nanoparticles on Polar Semiconductors:
             Interplay between Nanoparticle Wetting, Localized Surface
             Plasmon Dynamics, and Interface Charge},
   Journal = {Langmuir},
   Volume = {25},
   Number = {2},
   Pages = {924--930},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2009},
   Month = {January},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000262431100040},
   Abstract = {Ga nanoparticles supported on large band gap semiconductors
             like SiC, GaN, and ZnO are interesting for plasmon-enhanced
             UV-emitting solid-state devices. We investigate the
             influence of the polarity of the SiC, GaN, and ZnO wurtzite
             semiconductors on the wetting of Ga nanoparticles and on the
             resulting surface plasmon resonance (SPR) by exploiting real
             time plasmonic ellipsometry. The interface potential between
             polar semiconductors (SiC, GaN, and ZnO) and plasmonic
             nanoparticles (gallium) is shown to influence nanoparticle
             formation dynamics, geometry, and consequently the SPR
             wavelength. We invoke the Lippman electrowetting framework
             to elucidate the mechanisms controlling nanoparticle
             dynamics and experimentally demonstrate that the charge
             transfer at the Ga nanoparticle/polar semiconductor
             interface is an intrinsic method for tailoring the
             nanoparticle plasmon resonance. Therefore, the present data
             demonstrate that for supported nanoparticles, surface and
             interface piezoelectric charge of polar semiconductors also
             affects SPR along with the well-known effect of the media
             refractive index.},
   Language = {English},
   Doi = {10.1021/la802678y},
   Key = {Wu:2009cma}
}

@article{Wu:2009cm,
   Author = {Wu, PC and Losurdo, M and Kim, TH and Giangregorio, M and Bruno, G and Everitt, HO and Brown, AS},
   Title = {Plasmonic Gallium Nanoparticles on Polar Semiconductors:
             Interplay between Nanoparticle Wetting, Localized Surface
             Plasmon Dynamics, and Interface Charge},
   Journal = {Langmuir},
   Volume = {25},
   Number = {2},
   Pages = {924-930},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2009},
   Month = {January},
   ISSN = {0743-7463},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000262431100040},
   Abstract = {Ga nanoparticles supported on large band gap semiconductors
             like SiC, GaN, and ZnO are interesting for plasmon-enhanced
             UV-emitting solid-state devices. We investigate the
             influence of the polarity of the SiC, GaN, and ZnO wurtzite
             semiconductors on the wetting of Ga nanoparticles and on the
             resulting surface plasmon resonance (SPR) by exploiting real
             time plasmonic ellipsometry. The interface potential between
             polar semiconductors (SiC, GaN, and ZnO) and plasmonic
             nanoparticles (gallium) is shown to influence nanoparticle
             formation dynamics, geometry, and consequently the SPR
             wavelength. We invoke the Lippman electrowetting framework
             to elucidate the mechanisms controlling nanoparticle
             dynamics and experimentally demonstrate that the charge
             transfer at the Ga nanoparticle/polar semiconductor
             interface is an intrinsic method for tailoring the
             nanoparticle plasmon resonance. Therefore, the present data
             demonstrate that for supported nanoparticles, surface and
             interface piezoelectric charge of polar semiconductors also
             affects SPR along with the well-known effect of the media
             refractive index.},
   Language = {English},
   Doi = {10.1021/la802678y},
   Key = {Wu:2009cm}
}

@article{fds324835,
   Author = {Zhang, X and Li, X and Zhang, D and Su, NQ and Yang, W and Everitt, HO and Liu, J},
   Title = {Product selectivity in plasmonic photocatalysis for carbon
             dioxide hydrogenation.},
   Journal = {Nature Communications},
   Volume = {8},
   Pages = {14542},
   Publisher = {The Author(s)},
   Year = {2017},
   Month = {February},
   url = {http://dx.doi.org/10.1038/ncomms14542},
   Abstract = {Photocatalysis has not found widespread industrial adoption,
             in spite of decades of active research, because the
             challenges associated with catalyst illumination and
             turnover outweigh the touted advantages of replacing heat
             with light. A demonstration that light can control product
             selectivity in complex chemical reactions could prove to be
             transformative. Here, we show how the recently demonstrated
             plasmonic behaviour of rhodium nanoparticles profoundly
             improves their already excellent catalytic properties by
             simultaneously reducing the activation energy and
             selectively producing a desired but kinetically unfavourable
             product for the important carbon dioxide hydrogenation
             reaction. Methane is almost exclusively produced when
             rhodium nanoparticles are mildly illuminated as hot
             electrons are injected into the anti-bonding orbital of a
             critical intermediate, while carbon monoxide and methane are
             equally produced without illumination. The reduced
             activation energy and super-linear dependence on light
             intensity cause the unheated photocatalytic methane
             production rate to exceed the thermocatalytic rate at
             350 °C.},
   Doi = {10.1038/ncomms14542},
   Key = {fds324835}
}

@article{2007ApPhL..90j3119W,
   Author = {Wu, PC and Kim, T-H and Brown, AS and Losurdo, M and Bruno, G and Everitt,
             HO},
   Title = {Real-time plasmon resonance tuning of liquid Ga
             nanoparticles by in situ spectroscopic ellipsometry},
   Journal = {Applied Physics Letters},
   Volume = {90},
   Number = {10},
   Pages = {103119},
   Organization = {Department of Electrical and Computer Engineering, Duke
             University, Durham, North Carolina 27708},
   Institution = {Department of Electrical and Computer Engineering, Duke
             University, Durham, North Carolina 27708},
   Year = {2007},
   url = {http://dx.doi.org/10.1063/1.2712508},
   Abstract = {Liquid Ga nanoparticles have been deposited on sapphire
             substrates at room temperature. The optical evolution of Ga
             nanoparticle surface plasmon resonance during deposition has
             been characterized by in situ real-time spectroscopic
             ellipsometry to control and tune the plasmon resonance
             photon energy. The existence of both longitudinal and
             transverse modes for spheroidal Ga nanoparticles supported
             on a sapphire substrate is demonstrated and the dependence
             of the longitudinal and transverse plasmon energies on
             particle size is discussed. Stability of the Ga surface
             plasmon resonance to air exposure and high temperature is
             also demonstrated. &copy; 2007 American Institute of
             Physics.},
   Doi = {10.1063/1.2712508},
   Key = {2007ApPhL..90j3119W}
}

@article{Teng:2000p1539,
   Author = {Teng, CW and Muth, JF and Özgür, Ü and Bergmann, MJ and Everitt, HO and Sharma, AK and Jin, C and Narayan, J},
   Title = {Refractive indices and absorption coefficients of
             MgxZn1−xO alloys},
   Journal = {Applied Physics Letters},
   Volume = {76},
   Number = {8},
   Pages = {979-981},
   Organization = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Institution = {N Carolina State Univ, Dept Elect {\&} Comp Engn, Raleigh,
             NC 27695 USA},
   Year = {2000},
   Month = {February},
   ISSN = {0003-6951},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=000085343700013&SID=2Dfb9AFL3jni2%40d8oGp&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {Indices of refraction for MgxZn1-xO epitaxial films grown by
             pulsed-laser deposition on sapphire substrates with x up to
             0.36 were determined in the range of wavelength 457-968 nm
             by analysis of optical transmission spectra and
             prism-coupled waveguide measurements. The dispersion follows
             the first-order Sellmeier dispersion equation. Absorption
             coefficients, exciton energy gaps, and binding energies of
             MgxZn1-xO alloys were determined by transmission
             spectroscopy. The excitonic absorption features were clearly
             visible at room temperature despite alloy broadening. These
             results provide important information for the design and
             modeling of ZnO/MgZnO heterostructure optoelectronic
             devices. (C) 2000 American Institute of Physics.
             [S0003-6951(00)01408-X].},
   Language = {English},
   Doi = {10.1063/1.125912},
   Key = {Teng:2000p1539}
}

@article{Cook:2005p1287,
   Author = {Cook, BP and Everitt, HO and Avrutsky, I and Osinsky, A and Cai, A and Muth, JF},
   Title = {Refractive indices of ZnSiN2 on r-plane sapphire},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {12},
   Pages = {121906-121906},
   Organization = {Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095
             USA},
   Institution = {Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095
             USA},
   Year = {2005},
   Month = {March},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000086000012121906000001&idtype=cvips&gifs=yes},
   Abstract = {II-IV-N-2 wide band gap semiconductors such as ZnSiN2,
             ZnGeN2, and ZnSiGeN2 have potential uses for nonlinear
             materials and as lattice matching compounds for the growth
             of SiC and GaN devices. In this study, the dispersion of the
             TE and TM indices of refraction has been measured
             systematically using the prism coupling technique for an
             orthorhombic ZnSiN2 epitaxial layer grown on r-plane
             sapphire. The resulting index dispersion is extracted from
             the measured optical modes using a layered biaxial waveguide
             analysis, which shows that although the ZnSiN2 crystal is
             orthorhombic, for practical purposes it can be treated as a
             uniaxial material. (C) 2005 American Institute of
             Physics.},
   Language = {English},
   Doi = {10.1063/1.1865325},
   Key = {Cook:2005p1287}
}

@article{2005ApPhL..86l1906C,
   Author = {Cook, B P and Everitt, Henry O and Avrutsky, I and Osinsky,
             A and Cai, A and Muth, John F},
   Title = {Refractive indices of ZnSiN2 on r-plane sapphire},
   Journal = {Applied Physics Letters},
   Volume = {86},
   Number = {12},
   Pages = {1906},
   Organization = {Department of Mathematics, University of California, Los
             Angeles, Los Angeles, California 90095},
   Institution = {Department of Mathematics, University of California, Los
             Angeles, Los Angeles, California 90095},
   Year = {2005},
   Month = {March},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005ApPhL..86l1906C&link_type=ABSTRACT},
   Abstract = {II-IV-N2 wide band gap semiconductors such as ZnSiN2,
             ZnGeN2, and ZnSiGeN2 have potential uses for nonlinear
             materials and as lattice matching compounds for the growth
             of SiC and GaN devices. In this study, the dispersion of the
             TE and TM indices of refraction has been measured
             systematically using the prism coupling technique for an
             orthorhombic ZnSiN2 epitaxial layer grown on r-plane
             sapphire. The resulting index dispersion is extracted from
             the measured optical modes using a layered biaxial waveguide
             analysis, which shows that although the ZnSiN2 crystal is
             orthorhombic, for practical purposes it can be treated as a
             uniaxial material.},
   Doi = {10.1063/1.1865325},
   Key = {2005ApPhL..86l1906C}
}

@article{fds324837,
   Author = {Watson, AM and Zhang, X and Alcaraz de la Osa and R and Marcos Sanz and J and González, F and Moreno, F and Finkelstein, G and Liu, J and Everitt,
             HO},
   Title = {Rhodium nanoparticles for ultraviolet plasmonics.},
   Journal = {Nano Letters},
   Volume = {15},
   Number = {2},
   Pages = {1095-1100},
   Year = {2015},
   Month = {February},
   url = {http://dx.doi.org/10.1021/nl5040623},
   Abstract = {The nonoxidizing catalytic noble metal rhodium is introduced
             for ultraviolet plasmonics. Planar tripods of 8 nm Rh
             nanoparticles, synthesized by a modified polyol reduction
             method, have a calculated local surface plasmon resonance
             near 330 nm. By attaching p-aminothiophenol, local
             field-enhanced Raman spectra and accelerated photodamage
             were observed under near-resonant ultraviolet illumination,
             while charge transfer simultaneously increased fluorescence
             for up to 13 min. The combined local field enhancement and
             charge transfer demonstrate essential steps toward
             plasmonically enhanced ultraviolet photocatalysis.},
   Doi = {10.1021/nl5040623},
   Key = {fds324837}
}

@article{fds314115,
   Author = {Kong, W and Mohanta, A and Roberts, AT and Jiao, WY and Fournelle, J and Kim, TH and Losurdo, M and Everitt, HO and Brown,
             AS},
   Title = {Room temperature photoluminescence from In x Al (1−x) N
             films deposited by plasma-assisted molecular beam
             epitaxy},
   Journal = {Applied Physics Letters},
   Volume = {105},
   Number = {13},
   Pages = {132101-132101},
   Year = {2014},
   Month = {September},
   ISSN = {0003-6951},
   url = {http://dx.doi.org/10.1063/1.4896849},
   Doi = {10.1063/1.4896849},
   Key = {fds314115}
}

@article{1990JChPh..92.6480E,
   Author = {Everett, HO and DeLucia, FC},
   Title = {Rotational energy transfer in CH 3 F: The Δ J = n , Δ K =0
             processes},
   Journal = {Journal of Chemical Physics},
   Volume = {92},
   Number = {11},
   Pages = {6480-6491},
   Year = {1990},
   Month = {June},
   ISSN = {0021-9606},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990JChPh..92.6480E&link_type=EJOURNAL},
   Abstract = {Not Available},
   Doi = {10.1063/1.458283},
   Key = {1990JChPh..92.6480E}
}

@article{Everitt:1990p1555,
   Author = {Everitt, Henry O and DeLucia, FC},
   Title = {ROTATIONAL ENERGY-TRANSFER IN CH3F - THE DELTA-J=N,
             DELTA-K=0 PROCESSES},
   Journal = {Journal Of Chemical Physics},
   Volume = {92},
   Number = {11},
   Pages = {6480--6491},
   Year = {1990},
   Month = {January},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=A1990DE14600016&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Language = {English},
   Doi = {10.1063/1.458283},
   Key = {Everitt:1990p1555}
}

@article{Reynolds:2013jv,
   Author = {Reynolds, JG and Jr, RCL and Mohanta, A and Muth, JF and Rowe, JE and Everitt, HO and Aspnes, DE},
   Title = {Shallow acceptor complexes in p-type ZnO},
   Journal = {Applied Physics Letters},
   Volume = {102},
   Number = {15},
   Pages = {152114},
   Year = {2013},
   Month = {April},
   ISSN = {0003-6951},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000318269200045&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Language = {English},
   Doi = {10.1063/1.4802753},
   Key = {Reynolds:2013jv}
}

@article{Albella:2011br,
   Author = {Albella, P and Garcia-Cueto, B and González, F and Moreno, F and Wu,
             PC and Kim, T-H and Brown, A and Yang, Y and Everitt, HO and Videen,
             G},
   Title = {Shape matters: Plasmonic nanoparticle shape enhances
             interaction with dielectric substrate},
   Journal = {Nano Letters},
   Volume = {11},
   Number = {9},
   Pages = {3531-3537},
   Publisher = {American Chemical Society},
   Year = {2011},
   ISSN = {1530-6984},
   url = {http://pubs.acs.org/doi/abs/10.1021/nl201783v},
   Abstract = {Numerical analyses of the ultraviolet and visible plasmonic
             spectra measured from hemispherical gallium nanostructures
             on dielectric substrates reveal that resonance frequencies
             are quite sensitive to illumination angle and polarization
             in a way that depends on nanostructure size, shape, and
             substrate. Large, polarization-dependent splittings arise
             from the broken symmetry of hemispherical gallium
             nanoparticles on sapphire substrates, inducing strong
             interactions with the substrate that depend sensitively on
             the angle of illumination and the nanoparticle diameter. ©
             2011 American Chemical Society.},
   Language = {English},
   Doi = {10.1021/nl201783v},
   Key = {Albella:2011br}
}

@article{Neogi:2005p5685,
   Author = {Neogi, A and Everitt, H and Morkoc, H and Kuroda, T and Tackeuchi,
             A},
   Title = {Size Dependence of Carrier Recombination Efficiency in GaN
             Quantum Dots},
   Journal = {IEEE Transactions on Nanotechnology},
   Volume = {4},
   Number = {2},
   Pages = {297-299},
   Organization = {Univ N Texas, Dept Phys, Denton, TX 76203
             USA},
   Institution = {Univ N Texas, Dept Phys, Denton, TX 76203
             USA},
   Year = {2005},
   Month = {March},
   url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1406009&tag=1},
   Abstract = {The dependence of radiative recombination rate and
             efficiency on GaN quantum-dot (QD) size and temperature is
             studied by time-resolved photoluminescence (PL)
             spectroscopy. The emission is dominated. by radiative
             recombination at low temperatures (< 125 K) and exhibits
             high PL efficiency at room temperature. The radiative
             lifetime and the relative quantum efficiency decrease with
             the decreasing QD size.},
   Language = {English},
   Doi = {10.1109/TNANO.2004.834170},
   Key = {Neogi:2005p5685}
}

@article{fds325479,
   Author = {Everitt, HO and De Lucia and FC and Skatrud, DD},
   Title = {SMALL TUNABLE OPTICALLY PUMPED FAR INFRARED
             LASER.},
   Journal = {Conference Digest - International Conference on Infrared and
             Millimeter Waves},
   Pages = {306-307},
   Year = {1987},
   Month = {December},
   Abstract = {A small-diameter continuous-wave far-infrared (FIR) laser
             that can provide approximately 100-MHz spectrally pure
             tunability has been developed and studied both
             experimentally and theoretically. Operation of this laser at
             pressures significantly greater than the maximum allowed by
             previously accepted theory yields the larger tunability. The
             model includes additional high-energy vibrational states and
             appropriate energy transfer mechanisms that fundamentally
             alter the behavior in the high-pressure, high-pump-intensity
             regime. Although **1**3CH//3F is used for both the
             experimental demonstration and the theoretical model, the
             concept is general and should apply to all
             diffusion-deactivated FIR lasers.},
   Key = {fds325479}
}

@article{2011OExpr..19.7513C,
   Author = {Chua, S-L and Caccamise, CA and Phillips, DJ and Joannopoulos, JD and Soljacić, M and Everitt, HO and Bravo-Abad, J},
   Title = {Spatio-temporal theory of lasing action in optically-pumped
             rotationally excited molecular gases.},
   Journal = {Optics express},
   Volume = {19},
   Number = {8},
   Pages = {7513-7529},
   Organization = {MIT, Dept Elect Engn {\&} Comp Sci, Cambridge, MA 02139
             USA},
   Institution = {MIT, Dept Elect Engn {\&} Comp Sci, Cambridge, MA 02139
             USA},
   Year = {2011},
   Month = {April},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011OExpr..19.7513C&link_type=EJOURNAL},
   Abstract = {We investigate laser emission from optically-pumped
             rotationally excited molecular gases confined in a metallic
             cavity. To this end, we have developed a theoretical
             framework able to accurately describe, both in the spatial
             and temporal domains, the molecular collisional and
             diffusion processes characterizing the operation of this
             class of lasers. The effect on the main lasing features of
             the spatial variation of the electric field intensity and
             the ohmic losses associated to each cavity mode are also
             included in our analysis. Our simulations show that, for the
             exemplary case of methyl fluoride gas confined in a
             cylindrical copper cavity, the region of maximum population
             inversion is located near the cavity walls. Based on this
             fact, our calculations show that the lowest lasing threshold
             intensity corresponds to the cavity mode that, while
             maximizing the spatial overlap between the corresponding
             population inversion and electric-field intensity
             distributions, simultaneously minimizes the absorption
             losses occurring at the cavity walls. The dependence of the
             lasing threshold intensity on both the gas pressure and the
             cavity radius is also analyzed and compared with experiment.
             We find that as the cavity size is varied, the interplay
             between the overall gain of the system and the corresponding
             ohmic losses allows for the existence of an optimal cavity
             radius which minimizes the intensity threshold for a large
             range of gas pressures. The theoretical analysis presented
             in this work expands the current understanding of lasing
             action in optically-pumped far-infrared lasers and, thus,
             could contribute to the development of a new class of
             compact far-infrared and terahertz sources able to operate
             efficiently at room temperature.},
   Language = {English},
   Doi = {10.1364/oe.19.007513},
   Key = {2011OExpr..19.7513C}
}

@article{fds314106,
   Author = {Everitt, H},
   Title = {Special Issue on Experimental Aspects of Quantum
             Computing},
   Journal = {Quantum Information Processing},
   Volume = {3},
   Number = {1-5},
   Pages = {1-4},
   Year = {2004},
   Month = {October},
   ISSN = {1570-0755},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000208503100001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Doi = {10.1007/s11128-004-9416-4},
   Key = {fds314106}
}

@article{Everitt:2004p423,
   Author = {Everitt, Henry O},
   Title = {Special Issue on Experimental Aspects of Quantum Computing:
             Introduction},
   Journal = {Quantum Information Processing},
   Year = {2004},
   Month = {January},
   url = {http://www.springerlink.com/index/X4737V1W672N1178.pdf},
   Abstract = {Page 1. Quantum Information Processing, Vol. 3, Nos. 1--5,
             October 2004 ({\copyright} 2004) INTRODUCTION},
   Key = {Everitt:2004p423}
}

@article{Smith:2010fl,
   Author = {Smith, ER and Gruber, JB and Wellenius, P and Muth, JF and Everitt,
             HO},
   Title = {Spectra and energy levels of Eu3+ in cubic phase
             Gd2O3},
   Journal = {Physica Status Solidi (B) Basic Solid State
             Physics},
   Volume = {247},
   Number = {7},
   Pages = {1807-1813},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2010},
   Month = {July},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000280263700049},
   Abstract = {In pulsed laser deposition of the sesquioxide semiconductor
             Gd2O3, adjusting the chamber oxygen pressure controls the
             crystalline structure of the host. This technique was used
             to deposit thin films of nominally 16% by weight
             europium-doped, cubic phase Gd2O3 using 50m Torr of oxygen
             Structural measurements using high-resolution transmission
             electron microscopy and selected area electron diffraction
             confirm the films were polycrystalline, cubic phase
             Eu:Gd2O3. The spectroscopic assignment of emission lines to
             specific radiative transitions within the trivalent Eu ion
             is confirmed by theoretical analysis of the appropriate
             crystal field Hamiltonian. Detailed crystal-field splittings
             are presented for the D-5(J=0-2) and F-7(J=0-5) multiplet
             manifolds of Eu3+ in this host material. (C) 2010 WILEY-VCH
             Verlag GmbH {\&} Co. KGaA, Weinheim},
   Language = {English},
   Doi = {10.1002/pssb.200945602},
   Key = {Smith:2010fl}
}

@article{Demers:2001p1383,
   Author = {Demers, JR and Goyette, TM and Ferrio, KB and Everitt, HO and Guenther,
             BD and De Lucia and FC},
   Title = {Spectral purity and sources of noise in femtosecond-demodulation
             terahertz sources driven by Ti : sapphire mode-locked
             lasers},
   Journal = {IEEE Journal of Quantum Electronics},
   Volume = {37},
   Number = {4},
   Pages = {595-605},
   Organization = {Ohio State Univ, Dept Phys, Columbus, OH 43210
             USA},
   Institution = {Ohio State Univ, Dept Phys, Columbus, OH 43210
             USA},
   Year = {2001},
   Month = {April},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=000167766000015&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {Direct measurements of the spectral purity in terahertz
             femtosecond-demodulation sources are reported and compared
             to theory. Because these sources operate at very high
             harmonics (similar to 10(2) - 10(4)) of the mode-lock
             frequency, a high spectral purity source is very dependent
             on a low-jitter femtosecond laser. Conversely, the spectral
             content of the terahertz sources provides detailed
             information about timing jitter and stringent tests of
             models used to describe the jitter. We find that both the
             behavior of the central core, and the noise skirts of the
             power spectrum of our sources, can be quantitatively related
             to measured ripple and continuum amplitude noise on the Ar+
             pump laser by use of modulation theory.},
   Language = {English},
   Doi = {10.1109/3.914410},
   Key = {Demers:2001p1383}
}

@article{2007JAP...102g3520P,
   Author = {Peng, H and Lee, C-W and Everitt, HO and Munasinghe, C and Lee, DS and Steckl, AJ},
   Title = {Spectroscopic and energy transfer studies of Eu3+ centers in
             GaN},
   Journal = {Journal of Applied Physics},
   Volume = {102},
   Number = {7},
   Pages = {073520-073520},
   Organization = {Department of Physics, Duke University, Durham, North
             Carolina 27708, USA},
   Institution = {Department of Physics, Duke University, Durham, North
             Carolina 27708, USA},
   Year = {2007},
   Month = {October},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007JAP...102g3520P&link_type=ABSTRACT},
   Abstract = {Photoluminescence (PL), photoluminescence excitation (PLE),
             and time-resolved PL spectroscopies have been carried out at
             room temperature and 86 K on transitions from 5D2, 5D1, and
             5D0 excited states to numerous 7FJ ground states of Eu-doped
             GaN films grown by conventional solid-source molecular beam
             epitaxy (MBE) and interrupted growth epitaxy MBE. Within the
             visible spectral range of 1.8-2.7 eV, 42 spectral features
             were observed and assignments were attempted for each
             transition. PL and PLE indicate that four Eu3+ centers exist
             in the GaN lattice whose relative concentration can be
             controlled by the duration of growth interruption. The
             energy levels for these four sites are self-consistently
             obtained, and time-resolved photoluminescence measurements
             reveal details about the radiative and nonradiative
             relaxations of excitation among these levels. The data
             indicate a near-resonant cross relaxation among these sites.
             The 5D2 and 5D1 states are observed to decay nonradiatively
             by filling the 5D0 state with characteristic times of 2.4
             and 2.8 $\mu$s, respectively. The 5D0 state is found to
             relax in a manner that depends slightly on the final state
             and dopant site.},
   Doi = {10.1063/1.2783893},
   Key = {2007JAP...102g3520P}
}

@article{Peng:2007p1265,
   Author = {Peng, Hongying and Lee, Chang-Won and Everitt, Henry O and Munasinghe, Chanaka and Lee, D S and Steckl, Andrew
             J},
   Title = {Spectroscopic and energy transfer studies of Eu3+ centers in
             GaN},
   Journal = {Journal of Applied Physics},
   Volume = {102},
   Number = {7},
   Pages = {--},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2007},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000102000007073520000001&idtype=cvips&gifs=yes},
   Abstract = {Photoluminescence (PL), photoluminescence excitation (PLE),
             and time-resolved PL spectroscopies have been carried out at
             room temperature and 86 K on transitions from D-5(2),
             D-5(1), and D-5(0) excited states to numerous F-7(J) ground
             states of Eu-doped GaN films grown by conventional
             solid-source molecular beam epitaxy (MBE) and interrupted
             growth epitaxy MBE. Within the visible spectral range of
             1.8-2.7 eV, 42 spectral features were observed and
             assignments were attempted for each transition. PL and PLE
             indicate that four Eu3+ centers exist in the GaN lattice
             whose relative concentration can be controlled by the
             duration of growth interruption. The energy levels for these
             four sites are self-consistently obtained, and time-resolved
             photoluminescence measurements reveal details about the
             radiative and nonradiative relaxations of excitation among
             these levels. The data indicate a near-resonant cross
             relaxation among these sites. The D-5(2) and D-5(1) states
             are observed to decay nonradiatively by filling the D-5(0)
             state with characteristic times of 2.4 and 2.8 mu s,
             respectively. The D-5(0) state is found to relax in a manner
             that depends slightly on the final state and dopant site.
             (C) 2007 American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.2783893},
   Key = {Peng:2007p1265}
}

@article{Roberts:2013cc,
   Author = {Roberts, AT and Mohanta, A and Everitt, HO and Leach, JH and Van Den
             Broeck and D and Hosalli, AM and Paskova, T and Bedair,
             SM},
   Title = {Spectroscopic investigation of coupling among asymmetric
             InGaN/GaN multiple quantum wells grown on non-polar a-plane
             GaN substrates},
   Journal = {Applied Physics Letters},
   Volume = {103},
   Number = {18},
   Pages = {181106-181106},
   Year = {2013},
   Month = {October},
   url = {http://link.aip.org/link/APPLAB/v103/i18/p181106/s1&Agg=doi},
   Language = {English},
   Doi = {10.1063/1.4827536},
   Key = {Roberts:2013cc}
}

@article{fds314145,
   Author = {Stiff Roberts and AD and Zhang, W and Xu, J and Peng, H and Everitt,
             HO},
   Title = {Spin-cast Deposition of CdSe-CdS Core-shell Colloidal
             Quantum Dots on Doped GaAs Substrates: Structural and
             Optical Characterization},
   Journal = {IEEE Transactions on Nanotechnology},
   Volume = {6},
   Number = {4},
   Pages = {413-420},
   Year = {2007},
   Month = {July},
   url = {http://dx.doi.org/10.1109/TNANO.2007.896845},
   Abstract = {The detailed study of the effects of spin recipe and GaAs
             substrate doping (i.e., semi-insulating, ç-type, or p-type)
             on the structural and optical properties of spin-cast
             CdSe-CdS core-shell CQDs provides insight into the surface
             adsorption and charge transfer mechanisms that will
             influence any potential optoelectronic device. The
             hypotheses of this study are: i) it is possible to establish
             spin-casting recipes that yield a thin film of CQDs with
             large surface density and uniform size, and ii) it is
             possible to control the optical response of CQDs by varying
             the GaAs substrate doping to influence charge transfer
             processes. As a result of these measurements, we have been
             able to demonstrate a strong dependence of spin-cast CQD
             structural properties on the doping type of the GaAs
             substrate, as well as evidence from measured optical
             properties to support the idea that hot carriers
             photoexcited in the GaAs substrate are transferred either to
             the CQD surface states through organic surface ligands or
             directly to confined states within the CQD. © 2007
             IEEE.},
   Doi = {10.1109/TNANO.2007.896845},
   Key = {fds314145}
}

@article{StiffRoberts:2007p1279,
   Author = {Stiff-Roberts, Adrienne D and Zhang, Wanming and Xu, Jian and Peng, Hongying and Everitt, Henry O},
   Title = {Spin-cast deposition of CdSe-CdS core-shell colloidal
             quantum dots on doped GaAs substrates: Structural and
             optical characterization},
   Journal = {IEEE Transactions On Nanotechnology},
   Volume = {6},
   Number = {4},
   Pages = {413--420},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2007},
   Month = {January},
   url = {http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4268347},
   Abstract = {The detailed study of the effects of spin recipe and GaAs
             substrate doping (i.e., semi-insulating, n-type, or p-type)
             on the structural and optical properties of spin-cast
             CdSe-CdS core-shell CQDs provides insight into the surface
             adsorption and charge transfer mechanisms that will
             influence any potential optoelectronic device. The
             hypotheses of this study are: i) it is possible to establish
             spin-casting recipes that yield a thin film of CQDs with
             large surface density and uniform size, and ii) it is
             possible to control the optical response of CQDs by varying
             the GaAs substrate doping to influence charge transfer
             processes. As a result of these measurements, we have been
             able to demonstrate " strong dependence of spin-cast CQD
             structural properties on the doping type of the GaAs
             substrate, as well as evidence from measured optical
             properties to support the idea that hot carriers
             photoexcited in the GaAs substrate are transferred either to
             the CQD surface states through organic surface ligands or
             directly to confined states within the CQD.},
   Language = {English},
   Doi = {10.1109/TNANO.2007.896845},
   Key = {StiffRoberts:2007p1279}
}

@article{StiffRoberts:2007ki,
   Author = {Stiff-Roberts, Adrienne D and Zhang, Wanming and Xu, Jian and Peng, Hongying and Everitt, Henry O},
   Title = {Spin-cast deposition of CdSe-CdS core-shell colloidal
             quantum dots on doped GaAs substrates: Structural and
             optical characterization},
   Journal = {Ieee Transactions On Nanotechnology},
   Volume = {6},
   Number = {4},
   Pages = {413--420},
   Organization = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Institution = {Duke Univ, Dept Elect {\&} Comp Engn, Durham, NC 27708
             USA},
   Year = {2007},
   Month = {January},
   url = {http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4268347},
   Abstract = {The detailed study of the effects of spin recipe and GaAs
             substrate doping (i.e., semi-insulating, n-type, or p-type)
             on the structural and optical properties of spin-cast
             CdSe-CdS core-shell CQDs provides insight into the surface
             adsorption and charge transfer mechanisms that will
             influence any potential optoelectronic device. The
             hypotheses of this study are: i) it is possible to establish
             spin-casting recipes that yield a thin film of CQDs with
             large surface density and uniform size, and ii) it is
             possible to control the optical response of CQDs by varying
             the GaAs substrate doping to influence charge transfer
             processes. As a result of these measurements, we have been
             able to demonstrate " strong dependence of spin-cast CQD
             structural properties on the doping type of the GaAs
             substrate, as well as evidence from measured optical
             properties to support the idea that hot carriers
             photoexcited in the GaAs substrate are transferred either to
             the CQD surface states through organic surface ligands or
             directly to confined states within the CQD.},
   Language = {English},
   Doi = {10.1109/TNANO.2007.896845},
   Key = {StiffRoberts:2007ki}
}

@article{Ozgur:2004p1282,
   Author = {Özgür, Ü and Teke, A and Liu, C and Cho, S-J and Morkoç, H and Everitt,
             HO},
   Title = {Stimulated emission and time-resolved photoluminescence in
             rf-sputtered ZnO thin films},
   Journal = {Applied Physics Letters},
   Volume = {84},
   Number = {17},
   Pages = {3223-3225},
   Organization = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA
             23284 USA},
   Year = {2004},
   Month = {April},
   ISSN = {0003-6951},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000084000017003223000001&idtype=cvips&gifs=yes},
   Abstract = {Stimulated emission (SE) was measured from ZnO thin films
             grown on c-plane sapphire by rf sputtering. Free exciton
             transitions were clearly observed at 10 K in the
             photoluminescence (PL), transmission, and reflection spectra
             of the sample annealed at 950degreesC. SE resulting from
             both exciton-exciton scattering and electron hole plasma
             formation was observed in the annealed samples at moderate
             excitation energy densities. The SE threshold energy density
             decreased with increasing annealing temperature up to
             similar to950 degreesC. The observation of low threshold
             exciton-exciton scattering-induced SE showed that excitonic
             laser action could be obtained in rf-sputtered ZnO thin
             films. At excitation densities below the SE threshold,
             time-resolved PL revealed very fast recombination times of
             similar to74 ps at room temperature, and no significant
             change at 85 K. The decay time for the SE-induced PL was
             below the system resolution of <45 ps. (C) 2004 American
             Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1713034},
   Key = {Ozgur:2004p1282}
}

@article{Ozgur:2003p1288,
   Author = {Özgür, Ü and Everitt, HO and He, L and Morkoç,
             H},
   Title = {Stimulated emission and ultrafast carrier relaxation in
             AlGaN/GaN multiple quantum wells},
   Journal = {Applied Physics Letters},
   Volume = {82},
   Number = {23},
   Pages = {4080-4082},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2003},
   Month = {June},
   ISSN = {0003-6951},
   url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000082000023004080000001&idtype=cvips&gifs=yes},
   Abstract = {Stimulated emission (SE) and ultrafast carrier relaxation
             dynamics were measured in two AlxGa1-xN/GaN
             multiple-quantum-well (MQW) structures, grown in a Ga-rich
             environment with x=0.2 and 0.3, respectively. The threshold
             density for SE (I-th similar or equal to100 muJ/cm(2)) was
             found to be independent of x. Room-temperature,
             time-resolved, differential transmission measurements mapped
             the carrier relaxation mechanisms for above barrier energy
             excitation. Photoexcited carriers are observed to relax into
             the QWs in <1 ps, while carrier recombination times as fast
             as 30 ps were measured. For excitation above Ith, SE is
             shown to deplete carriers in the barriers through a cascaded
             refilling of the QW state undergoing SE. Similar behavior is
             seen in an Al0.3Ga0.7N/GaN MQW grown with a N-rich
             atmosphere, but the relaxation phenomena of all AlGaN MQWs
             are significantly faster than observed in InGaN MQWs of
             similar structure. (C) 2003 American Institute of
             Physics.},
   Language = {English},
   Doi = {10.1063/1.1581385},
   Key = {Ozgur:2003p1288}
}

@article{Ozgur:2003p1540,
   Author = {Özgür, Ü and Everitt, HO and Keller, S and DenBaars,
             SP},
   Title = {Stimulated emission and ultrafast carrier relaxation in
             InGaN multiple quantum wells},
   Journal = {Applied Physics Letters},
   Volume = {82},
   Number = {9},
   Pages = {1416-1418},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2003},
   Month = {March},
   ISSN = {0003-6951},
   url = {http://link.aip.org/link/APPLAB/v82/i9/p1416/s1&Agg=doi},
   Abstract = {Stimulated emission (SE) was measured from two InGaN
             multiple quantum well (MQW) laser structures with different
             QW In compositions x. SE threshold energy densities (I-th)
             increased with increasing x-dependent QW depth.
             Time-resolved differential transmission measurements mapped
             the carrier relaxation mechanisms and explained the
             dependence of I-th on x. Carriers are captured from the
             barriers to the QWs in <1 ps, while carrier recombination
             rates increased with increasing x. For excitation above
             I-th, an additional, fast relaxation mechanism appears due
             to the loss of carriers in the barriers through a cascaded
             refilling of the QW state undergoing SE. The increased
             material inhomogeneity with increasing x provides additional
             relaxation channels outside the cascaded refilling process,
             removing carriers from the SE process and increasing I-th.
             (C) 2003 American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1557770},
   Key = {Ozgur:2003p1540}
}

@article{Ozgur:2002p1776,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Everitt, Henry O and Keller,
             Stacia and DenBaars, Steven P},
   Title = {Stimulated emission and ultrafast carrier relaxation in
             InGaN multiple quantum wells},
   Journal = {arXiv},
   Volume = {cond-mat.mes-hall},
   Year = {2002},
   Month = {January},
   url = {http://arxiv.org/abs/cond-mat/0210343v1},
   Keywords = {cond-mat.mes-hall, cond-mat.mtrl-sci},
   Abstract = {Stimulated emission (SE) was measured from two InGaN
             multiple quantum well (MQW) laser structures with different
             In compositions. SE threshold power densities (I_th)
             increased with increasing QW depth (x). Time-resolved
             differential transmission measurements mapped the carrier
             relaxation mechanisms and explained the dependence of I_th
             on x. Carriers are captured from the barriers to the QWs in
             < 1 ps, while carrier recombination rates increased with
             increasing x. For excitation above I_th an additional, fast
             relaxation mechanism appears due to the loss of carriers in
             the barriers through a cascaded refilling of the QW state
             undergoing SE. The increased material inhomogeneity with
             increasing x provides additional relaxation channels outside
             the cascaded refilling process, removing carriers from the
             SE process and increasing I_th.},
   Key = {Ozgur:2002p1776}
}

@article{Cho:2011ef,
   Author = {Cho, J and Lin, Q and Yang, S and Jr, JGS and Cheng, Y and Lin, E and Yang, J and Foreman, JV and Everitt, HO and Yang, W and Kim, J and Liu,
             J},
   Title = {Sulfur-doped zinc oxide (ZnO) Nanostars: Synthesis and
             simulation of growth mechanism},
   Journal = {Nano Research},
   Volume = {5},
   Number = {1},
   Pages = {20-26},
   Year = {2012},
   ISSN = {1998-0124},
   url = {http://www.springerlink.com/index/10.1007/s12274-011-0180-3},
   Abstract = {We present a bottom-up synthesis, spectroscopic
             characterization, and ab initio simulations of star-shaped
             hexagonal zinc oxide (ZnO) nanowires. The ZnO nanostructures
             were synthesized by a low-temperature hydrothermal growth
             method. The cross-section of the ZnO nanowires transformed
             from a hexagon to a hexagram when sulfur dopants from
             thiourea [SC(NH 2) 2] were added into the growth solution,
             but no transformation occurred when urea (OC(NH 2) 2) was
             added. Comparison of the X-ray photoemission and
             photoluminescence spectra of undoped and sulfur-doped ZnO
             confirmed that sulfur is responsible for the novel
             morphology. Large-scale theoretical calculations were
             conducted to understand the role of sulfur doping in the
             growth process. The ab initio simulations demonstrated that
             the addition of sulfur causes a local change in charge
             distribution that is stronger at the vertices than at the
             edges, leading to the observed transformation from hexagon
             to hexagram nanostructures. © 2012 Tsinghua University
             Press and Springer-Verlag Berlin Heidelberg.},
   Language = {English},
   Doi = {10.1007/s12274-011-0180-3},
   Key = {Cho:2011ef}
}

@inproceedings{Neogi:ea,
   Author = {Neogi, A and Lee, C W and Everitt, Henry O and Kuroda, T and Tackeuchi, A and Yablonovitch, E},
   Title = {Summaries of Papers Presented at the Quantum Electronics and
             Laser Science Conference},
   Pages = {258--259},
   Booktitle = {QELS-2002},
   Publisher = {Opt. Soc. America},
   Year = {2002},
   Month = {May},
   ISBN = {1-55752-707-5},
   url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=1031393},
   Doi = {10.1109/QELS.2002.1031393},
   Key = {Neogi:ea}
}

@article{fds318416,
   Author = {Kung, P and Mohanta, A and Jr, SJG and Everitt, HO and Shen, G and Waters,
             J and Kim, SM and IEEE},
   Title = {Synthesis and Optical Properties of Undoped and Aluminum
             doped ZnO Nanowires for Optoelectronic Nanodevice
             Applications},
   Journal = {2014 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING
             SERIES},
   Pages = {198-199},
   Year = {2014},
   url = {http://dx.doi.org/10.1109/SUM.2014.108},
   Doi = {10.1109/SUM.2014.108},
   Key = {fds318416}
}

@article{Ozgur:2001p1545,
   Author = {Özgür, Ü and Webb-Wood, G and Everitt, HO and Yun, F and Morkoç,
             H},
   Title = {Systematic measurement of AlxGa1−xN refractive
             indices},
   Journal = {Applied Physics Letters},
   Volume = {79},
   Number = {25},
   Pages = {4103-4105},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2001},
   Month = {December},
   ISSN = {0003-6951},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000172682300011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Dispersion of the ordinary and extraordinary indices of
             refraction have been measured systematically for wurtzitic
             AlxGa1-xN epitaxial layers with 0.0 less than or equal tox
             less than or equal to1.0 throughout the visible wavelength
             region. The dispersion, measured by a prism coupling
             waveguide technique, is found to be well described by a
             Sellmeier relation. Discrepancies among previous
             measurements of refractive index dispersion, as a
             consequence of different growth conditions and corresponding
             band gap bowing parameter, are reconciled when the Sellmeier
             relation is parameterized not by x but by band gap energy.
             (C) 2001 American Institute of Physics.},
   Language = {English},
   Doi = {10.1063/1.1426270},
   Key = {Ozgur:2001p1545}
}

@inproceedings{Ozgur:2001p1546,
   Author = {Ozgur, U and Lee, CW and Everitt, HO},
   Title = {Temperature dependence and reflection of coherent acoustic
             phonons in InGaN multiple quantum wells},
   Journal = {Physica Status Solidi (B) Basic Solid State
             Physics},
   Volume = {228},
   Number = {1},
   Pages = {85-89},
   Booktitle = {Physica Status Solidi B-Basic Solid State
             Physics},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2001},
   Month = {November},
   url = {http://access.isiproducts.com/custom_images/wok_failed_auth.html},
   Abstract = {Sub-picosecond optical pump-probe techniques were used to
             generate coherent zone-folded longitudinal acoustic phonons
             (ZFLAPS) in an InGaN multiple quantum well structure.
             Differential transmission measurements revealed that
             carriers injected near the barrier band edge were quickly
             captured into the quantum wells and generated strong
             coherent ZFLAP oscillations. Differential reflection
             measurements were used to explore the acoustic phonon
             transport and reflection in the multiple quantum well
             structure.},
   Language = {English},
   Key = {Ozgur:2001p1546}
}

@article{Lee:2004p834,
   Author = {Lee, C-W and Everitt, HO and Lee, DS and Steckl, AJ and Zavada,
             JM},
   Title = {Temperature dependence of energy transfer mechanisms in
             Eu-doped GaN},
   Journal = {Journal of Applied Physics},
   Volume = {95},
   Number = {12},
   Pages = {7717-7724},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2004},
   Month = {June},
   ISSN = {0021-8979},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000221843400025},
   Abstract = {The temperature dependent behavior of continuous-wave and
             time-resolved photoluminescence of Eu-doped GaN in the
             visible region is measured for both the D-5(0)-->F-7(2) and
             D-5(0)-->F-7(3) transitions. The radiative decay of these
             transitions, following pulsed laser excitation of the GaN
             host, is monitored by a grating spectrometer and
             photomultiplier tube detector system. In addition to these
             two radiative energy transfer pathways within Eu3+, the data
             reveal two nonradiative energy transfer paths between Eu3+
             and the host GaN. Decay constants for the relaxation
             processes are extracted from the data using a numerically
             solved rate equation model. Although the dominant radiative
             relaxation processes decayed with a temperature insensitive
             decay constant of 166 mus, a prominent role for nonradiative
             transfer between Eu3+ and impurities within the GaN host was
             deduced above 180 K. (C) 2004 American Institute of
             Physics.},
   Language = {English},
   Doi = {10.1063/1.1738529},
   Key = {Lee:2004p834}
}

@article{fds324839,
   Author = {Heimbeck, MS and Ng, WR and Golish, DR and Gehm, ME and Everitt,
             HO},
   Title = {Terahertz digital holographic imaging of visibly opaque
             printed dielectrics},
   Journal = {International Conference on Infrared, Millimeter, and
             Terahertz Waves},
   Year = {2014},
   Month = {January},
   ISBN = {9781479938773},
   url = {http://dx.doi.org/10.1109/IRMMW-THz.2014.6956276},
   Abstract = {© 2014 IEEE. Terahertz digital off-axis holography has been
             demonstrated as a non-destructive imaging tool for
             three-dimensional (3D) printed structures. Digital
             holographic reconstructions from two structures were used to
             measure the imager's modulation transfer function and to
             show that terahertz digital holography can provide
             submillimeter resolution images of visually opaque printed
             structures and map their interior. As a demonstration we
             report on the detection of embedded air voids and material
             inclusions that differ from the host material in their
             complex refractive indices.},
   Doi = {10.1109/IRMMW-THz.2014.6956276},
   Key = {fds324839}
}

@article{fds318413,
   Author = {Heimbeck, MS and Ng, W-R and Golish, DR and Gehm, ME and Everitt,
             HO},
   Title = {Terahertz Digital Holographic Imaging of Voids Within
             Visibly Opaque Dielectrics},
   Journal = {IEEE Transactions on Terahertz Science and
             Technology},
   Volume = {5},
   Number = {1},
   Pages = {110-116},
   Year = {2015},
   Month = {January},
   url = {http://dx.doi.org/10.1109/TTHZ.2014.2364511},
   Doi = {10.1109/TTHZ.2014.2364511},
   Key = {fds318413}
}

@article{Heimbeck:2011vb,
   Author = {Heimbeck, MS and Kim, MK and Gregory, DA and Everitt,
             HO},
   Title = {Terahertz digital holography using angular spectrum and dual
             wavelength reconstruction methods.},
   Journal = {Optics express},
   Volume = {19},
   Number = {10},
   Pages = {9192-9200},
   Year = {2011},
   Month = {May},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011OExpr..19.9192H&link_type=EJOURNAL},
   Abstract = {Terahertz digital off-axis holography is demonstrated using
             a Mach-Zehnder interferometer with a highly coherent,
             frequency tunable, continuous wave terahertz source emitting
             around 0.7 THz and a single, spatially-scanned Schottky
             diode detector. The reconstruction of amplitude and phase
             objects is performed digitally using the angular spectrum
             method in conjunction with Fourier space filtering to reduce
             noise from the twin image and DC term. Phase unwrapping is
             achieved using the dual wavelength method, which offers an
             automated approach to overcome the 2π phase ambiguity.
             Potential applications for nondestructive test and
             evaluation of visually opaque dielectric and composite
             objects are discussed.},
   Doi = {10.1364/oe.19.009192},
   Key = {Heimbeck:2011vb}
}

@article{fds314085,
   Author = {Heimbeck, MS and Kim, MK and Gregory, DA and Everitt,
             HO},
   Title = {Terahertz Digital Off-Axis Holography for Non-Destructive
             Testing},
   Journal = {International Conference on Infrared, Millimeter, and
             Terahertz Waves},
   Year = {2011},
   ISSN = {2162-2027},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330296300335&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Key = {fds314085}
}

@article{Heimbeck:2012ka,
   Author = {Heimbeck, MS and Marks, DL and Brady, D and Everitt,
             HO},
   Title = {Terahertz interferometric synthetic aperture tomography for
             confocal imaging systems},
   Journal = {Optics Letters},
   Volume = {37},
   Number = {8},
   Pages = {1316-1318},
   Year = {2012},
   ISSN = {0146-9592},
   url = {http://www.opticsinfobase.org/abstract.cfm?URI=ol-37-8-1316},
   Abstract = {Terahertz (THz) interferometric synthetic aperture
             tomography (TISAT) for confocal imaging within extended
             objects is demonstrated by combining attributes of synthetic
             aperture radar and optical coherence tomography. Algorithms
             recently devised for interferometric synthetic aperture
             microscopy are adapted to account for the diffraction-and
             defocusing-induced spatially varying THz beam width
             characteristic of narrow depth of focus, high-resolution
             confocal imaging. A frequency-swept two-dimensional TISAT
             confocal imaging instrument rapidly achieves in-focus,
             diffraction-limited resolution over a depth 12 times larger
             than the instrument's depth of focus in a manner that may be
             easily extended to three dimensions and greater depths. ©
             2012 Optical Society of America.},
   Language = {English},
   Doi = {10.1364/OL.37.001316},
   Key = {Heimbeck:2012ka}
}

@article{Mani:2013kk,
   Author = {Mani, RG and Ramanayaka, AN and Ye, T and Heimbeck, MS and Everitt, HO and Wegscheider, W},
   Title = {Terahertz photovoltaic detection of cyclotron resonance in
             the regime of radiation-induced magnetoresistance
             oscillations},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {87},
   Number = {24},
   Pages = {245308},
   Year = {2013},
   Month = {June},
   ISSN = {1098-0121},
   url = {http://link.aps.org/doi/10.1103/PhysRevB.87.245308},
   Language = {English},
   Doi = {10.1103/PhysRevB.87.245308},
   Key = {Mani:2013kk}
}

@article{Simmons:2013eg,
   Author = {Simmons, JG and Foreman, JV and Liu, J and Everitt,
             HO},
   Title = {The dependence of ZnO photoluminescence efficiency on
             excitation conditions and defect densities},
   Journal = {Applied Physics Letters},
   Volume = {103},
   Number = {20},
   Pages = {201110},
   Year = {2013},
   Month = {November},
   url = {http://link.aip.org/link/APPLAB/v103/i20/p201110/s1&Agg=doi},
   Abstract = {The quantum efficiencies of both the band edge and
             deep-level defect emission from annealed ZnO powders were
             measured as a function of excitation fluence and wavelength
             from a tunable sub-picosecond source. A simple model of
             excitonic decay reproduces the observed excitation
             dependence of rate constants and associated trap densities
             for all radiative and nonradiative processes. The analysis
             explores how phosphor performance deteriorates as excitation
             fluence and energy increase, provides an all-optical
             approach for estimating the number density of defects
             responsible for deep-level emission, and yields new insights
             for designing efficient ZnO-based phosphors. © 2013 AIP
             Publishing LLC.},
   Language = {English},
   Doi = {10.1063/1.4829745},
   Key = {Simmons:2013eg}
}

@article{Everitt:1993p1548,
   Author = {Everitt, HO and De Lucia and FC},
   Title = {The temperature dependence of fast vibrational energy
             transfer processes in methyl fluoride},
   Journal = {Molecular Physics},
   Volume = {79},
   Number = {5},
   Pages = {1087-1101},
   Organization = {OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210},
   Institution = {OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210},
   Year = {1993},
   Month = {August},
   url = {http://apps.isiknowledge.com/InboundService.do?Func=Frame&product=WOS&action=retrieve&SrcApp=Papers&UT=A1993LR63800013&SID=4FnIC7F76BnjjOEmGgG&Init=Yes&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {The temperature dependencies of two fast vibrational energy
             transfer processes in methyl fluoride (CH3F) have been
             measured between 120 K and 400 K by means of time-resolved
             millimetre/submillimetre-infrared double resonance
             spectroscopy. The first of these processes, a resonant
             vibrational swapping process between the ground vibrational
             state and the nu3 = 1 (nu3) vibrational state, effectively
             transfers population between states of A and E symmetry. A
             rapid increase in cross section with decreasing temperature
             was observed for this process, a result in excellent
             quantitative agreement with semiclassical theory of near
             resonant vibrational collisions. The second process, which
             transfers population between the nu3 and nu6 = 1 (nu6)
             vibrational states, was found experimentally to have a much
             weaker temperature dependence. From this result and from
             additional experimental observations of symmetry
             type-sensitive energy transfer into nu6, the energy transfer
             between nu3 and nu6 was demonstrated to result from a
             'direct' vibrational energy transfer rather than from an
             'indirect' vibrational swap process.},
   Language = {English},
   Doi = {10.1080/00268979300101851},
   Key = {Everitt:1993p1548}
}

@article{fds314051,
   Author = {Özgür, Ü and Gu, X and Chevtchenko, S and Spradlin, J and Cho, S-J and Morkoç, H and Pollak, FH and Everitt, HO and Nemeth, B and Nause,
             JE},
   Title = {Thermal conductivity of bulk ZnO after different thermal
             treatments},
   Journal = {Journal of Electronic Materials},
   Volume = {35},
   Number = {4},
   Pages = {550-555},
   Year = {2006},
   Month = {April},
   ISSN = {0361-5235},
   url = {http://dx.doi.org/10.1007/s11664-006-0098-9},
   Doi = {10.1007/s11664-006-0098-9},
   Key = {fds314051}
}

@article{Ozgur:2006p1276,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Gu, X and Chevtchenko, S and Spradlin, J and Cho, SJ and Morkoc, H and Pollak, FH and Everitt, HO and Nemeth, B and Nause, JE},
   Title = {Thermal conductivity of bulk ZnO after different thermal
             treatments},
   Journal = {Journal Of Electronic Materials},
   Volume = {35},
   Number = {4},
   Pages = {550--555},
   Organization = {Virginia Commonwealth Univ, Dept Elect {\&} Comp Engn,
             Richmond, VA 23284 USA},
   Institution = {Virginia Commonwealth Univ, Dept Elect {\&} Comp Engn,
             Richmond, VA 23284 USA},
   Year = {2006},
   Month = {January},
   Abstract = {Thermal conductivities (kappa) of melt-grown bulk ZnO
             samples thermally treated under different conditions were
             measured using scanning thermal microscopy. Samples annealed
             in air at 1050 degrees C for 3 h and treated with N-plasma
             at 750 degrees C for 1 min. exhibited kappa = 1.35 +/- 0.08
             W/cm-K and kappa = 1.47 +/- 0.08 W/cm-K, respectively. These
             are the highest values reported for ZnO. Atomic force
             microscopy (AFM) and conductive-AFM measurements revealed
             that surface carrier concentration as well as surface
             morphology affected the thermal conductivity.},
   Language = {English},
   Key = {Ozgur:2006p1276}
}

@article{2006JEMat..35..550O,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Gu, X and Chevtchenko, S and Spradlin, J and Cho, S-J and Morko{\c c}, H and Pollak, F H and Everitt, Henry O and Nemeth, B and Nause, J
             E},
   Title = {Thermal conductivity of bulk ZnO after different thermal
             treatments},
   Journal = {Journal Of Electronic Materials},
   Volume = {35},
   Number = {4},
   Pages = {550--555},
   Organization = {Department of Electrical and Computer Engineering, Virginia
             Commonwealth University},
   Institution = {Department of Electrical and Computer Engineering, Virginia
             Commonwealth University},
   Year = {2006},
   Month = {January},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=000237101800009&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {Thermal conductivities (kappa) of melt-grown bulk ZnO
             samples thermally treated under different conditions were
             measured using scanning thermal microscopy. Samples annealed
             in air at 1050 degrees C for 3 h and treated with N-plasma
             at 750 degrees C for 1 min. exhibited kappa = 1.35 +/- 0.08
             W/cm-K and kappa = 1.47 +/- 0.08 W/cm-K, respectively. These
             are the highest values reported for ZnO. Atomic force
             microscopy (AFM) and conductive-AFM measurements revealed
             that surface carrier concentration as well as surface
             morphology affected the thermal conductivity.},
   Language = {English},
   Doi = {10.1007/s11664-006-0098-9},
   Key = {2006JEMat..35..550O}
}

@article{Foreman06,
   Author = {Foreman, JV and Li, J and Peng, H and Choi, S and Everitt, HO and Liu,
             J},
   Title = {Time-resolved investigation of bright visible wavelength
             luminescence from sulfur-doped ZnO nanowires and
             micropowders.},
   Journal = {Nano Letters},
   Volume = {6},
   Number = {6},
   Pages = {1126-1130},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2006},
   Month = {June},
   ISSN = {1530-6984},
   url = {http://pubs.acs.org/doi/abs/10.1021/nl060204z},
   Abstract = {Sulfur-doped zinc oxide (ZnO) nanowires grown on gold-coated
             silicon substrates inside a horizontal tube furnace exhibit
             remarkably strong visible wavelength emission with a quantum
             efficiency of 30%, an integrated intensity 1600 times
             stronger than band edge ultraviolet emission, and a spectral
             distribution that closely matches the dark-adapted human eye
             response. By comparatively studying sulfur-doped and undoped
             ZnO micropowders, we clarify how sulfur doping and
             nanostructuring affect the visible luminescence and the
             underlying energy transfer mechanisms.},
   Language = {English},
   Doi = {10.1021/nl060204z},
   Key = {Foreman06}
}

@article{2010OptL...35.3658H,
   Author = {Heimbeck, MS and Reardon, PJ and Callahan, J and Everitt,
             HO},
   Title = {Transmissive quasi-optical Ronchi phase grating for
             terahertz frequencies.},
   Journal = {Optics Letters},
   Volume = {35},
   Number = {21},
   Pages = {3658-3660},
   Organization = {USA, Aviat {\&} Missile RD{\&}E Ctr, Weap Sci Directorate,
             Redstone Arsenal, AL 35898 USA},
   Institution = {USA, Aviat {\&} Missile RD{\&}E Ctr, Weap Sci Directorate,
             Redstone Arsenal, AL 35898 USA},
   Year = {2010},
   Month = {November},
   ISSN = {0146-9592},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010OptL...35.3658H&link_type=EJOURNAL},
   Abstract = {A transmissive, square-wave Ronchi phase grating has been
             fabricated from the dielectric polytetrafluoroethylene to
             diffract an ~0.7 THz beam quasi-optically. When illuminated
             by a coherent, cw terahertz (THz) source, the spot
             separation of the ±1 diffractive orders and the diffraction
             efficiency were measured as a function of THz frequency and
             rotation angle. The grating performance depends sensitively
             on the refractive index, whose value can be measured with an
             accuracy limited by the fabrication precision. The use of
             these gratings for polarization-insensitive quasi-optical
             imaging and phased arrays is discussed.},
   Language = {English},
   Doi = {10.1364/ol.35.003658},
   Key = {2010OptL...35.3658H}
}

@article{Beaky:1999p1554,
   Author = {Beaky, MM and Burk, JB and Everitt, HO and Haider, MA and Venakides,
             S},
   Title = {Two-dimensional photonic crystal fabry-perot resonators with
             lossy dielectrics},
   Journal = {IEEE Transactions on Microwave Theory and
             Techniques},
   Volume = {47},
   Number = {11},
   Pages = {2085-2091},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {1999},
   url = {http://apps.isiknowledge.com/InboundService.do?product=WOS&action=retrieve&SrcApp=Papers&UT=000083406900004&SID=4FnIC7F76BnjjOEmGgG&SrcAuth=mekentosj&mode=FullRecord&customersID=mekentosj&DestFail=http%3A%2F%2Faccess.isiproducts.com%2Fcustom_images%2Fwok_failed_auth.html},
   Abstract = {Square and triangular lattice two-dimensional (2-D) photonic
             crystals (PC's) composed of lossy dielectric rods in air
             were constructed with a microwave bandgap between 4-8 GHz.
             Fabry-Perot resonators of varying length were constructed
             from two of these PC's of adjustable thickness and
             reflectivity. The quality factor of cavity modes supported
             in the resonators was found to increase with increasing PC
             mirror thickness, but only to a point dictated by the
             lossiness of the dielectric rods. A 2-D periodic Green's
             function simulation was found to model the data accurately
             and quickly using physical parameters obtained in separate
             measurements. Simple rules are developed for designing
             optimal resonators in the presence of dielectric loss. ©
             1999 IEEE.},
   Language = {English},
   Doi = {10.1109/22.798003},
   Key = {Beaky:1999p1554}
}

@inproceedings{Ni:2007ge,
   Author = {Ni, X and {\"O}zg{\"u}r, {\"U}mit and Morko{\c c}, H and Baski, A A and Liliental-Weber, Z and Everitt, Henry
             O},
   Title = {Two-step epitaxial lateral overgrowth of a-plane GaN by
             MOCVD},
   Pages = {647303--647303--7},
   Booktitle = {Gallium Nitride Materials and Devices II},
   Publisher = {SPIE},
   Year = {2007},
   Month = {February},
   url = {http://link.aip.org/link/PSISDG/v6473/i1/p647303/s1&Agg=doi},
   Abstract = {We report on growth and characterization of epitaxial
             lateral overgrown (ELO) (1120) a-plane GaN by metalorganic
             chemical vapor deposition (MOCVD). The ELO samples were
             grown using a SiO2 striped mask pattern consisting of 4
             $\mu$m wide open windows and 10 $\mu$m or 20 $\mu$m wide
             SiO2 stripes. Different growth rates in Ga- and N-wings
             along with the wing tilt create a major obstacle for
             achieving a fully coalesced flat surface in ELO-GaN. To
             address this problem we have employed a two-step growth
             method that is able to provide a high height to width aspect
             ratio in the first growth step followed by enhanced lateral
             growth in the second step by controlling the growth
             temperature. Depending on the growth conditions, lateral
             growth rate of the wings with Ga-polarity were from 2 to 5
             times larger than that of the N- polarity wings. We
             investigated the effects of growth parameters on wing tilt,
             which was observed to be ~ 0.25$\,^{\circ}$ from the Kikuchi
             lines using large angle convergent beam electron diffraction
             (LACBED) and accompanied by some twist (0.09$\,^{\circ}$)
             between the two opposite wings. Transmission electron
             microscopy (TEM) results showed that the threading
             dislocation density in the resulting fully coalesced
             overgrown GaN was reduced from 4.2×1010 cm-2 in the window
             area to 1.0×108 cm-2 in the wing area, and that the wing
             areas contained relatively high density of basal stacking
             faults, 1.2×104 cm-1. The recombination of
             carriers/excitons localized at stacking faults was evident
             in far-field near bandedge photoluminescence (PL) measured
             at 10 K. Moreover, atomic force microscopy (AFM)
             measurements revealed two orders of magnitude higher density
             of surface pits in window than in wing regions, which could
             be decorating dislocation termination on surface.
             Time-resolved PL measurements for the a-plane ELO-GaN
             samples revealed biexponential decays. The recombination
             times were significantly increased ($\tau$1=80 ps and
             $\tau$2=250 ps) compared to the standard a-plane epitaxial
             layers (<45 ps), and ratio of the slow decaying component
             magnitude to the fast decaying one was more than 1.5,
             showing considerable reduction of nonradiative centers by
             lateral overgrowth. In addition, room temperature near-field
             optical microscopy studies revealed the improved optical
             quality in the wing regions of the overgrown GaN. As
             revealed from far-field PL, the band edge luminescence at
             room temperature was more than two orders of magnitude
             weaker than the yellow luminescence. Therefore, the overall
             spectrally integrated near field PL was collected, and its
             intensity was noticeably stronger in the wing areas with
             both Ga and N polarity. The much weaker emission at the
             windows and meeting fronts of the two opposite wings were
             consistent with the observations of high density of
             dislocations in the window regions and new defects
             originating at the meeting boundaries from
             TEM.},
   Language = {English},
   Doi = {10.1117/12.706826},
   Key = {Ni:2007ge}
}

@article{fds318426,
   Author = {Ni, X and Ozgur, U and Morkoc, H and Baski, AA and Liliental-Weber, Z and Everitt, HO},
   Title = {Two-step epitaxial lateral overgrowth of a-plane GaN by
             MOCVD},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {6473},
   Pages = {47303-47303},
   Year = {2007},
   ISBN = {978-0-8194-6586-3},
   url = {http://dx.doi.org/10.1117/12.706826},
   Doi = {10.1117/12.706826},
   Key = {fds318426}
}

@article{fds318435,
   Author = {Özgür, Ü and Everitt, HO},
   Title = {Ultrafast carrier relaxation in GaN, and an multiple quantum
             well},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {67},
   Number = {15},
   Year = {2003},
   Month = {April},
   url = {http://dx.doi.org/10.1103/PhysRevB.67.155308},
   Doi = {10.1103/PhysRevB.67.155308},
   Key = {fds318435}
}

@article{2003PhRvB..67o5308O,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Everitt, Henry
             O},
   Title = {Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an
             In0.07Ga0.93N/In0.12Ga0.88N multiple quantum
             well},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {67},
   Number = {15},
   Pages = {155308},
   Organization = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Institution = {Department of Physics, Duke University, Durham, North
             Carolina 27708},
   Year = {2003},
   Month = {April},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003PhRvB..67o5308O&link_type=ABSTRACT},
   Abstract = {Room-temperature, wavelength-nondegenerate ultrafast
             pump/probe measurements were performed on GaN and InGaN
             epilayers and an InGaN multiple quantum well (QW) structure.
             Carrier relaxation dynamics were investigated as a function
             of excitation wavelength and intensity. Spectrally resolved
             sub-picosecond relaxation due to carrier redistribution and
             QW capture was found to depend sensitively on the wavelength
             of pump excitation. Moreover, for pump intensities above a
             threshold of 100 $\mu$J/cm2, all samples demonstrated an
             additional emission feature arising from stimulated emission
             (SE). SE is evidenced as accelerated relaxation (<10 ps) in
             the pump-probe data, fundamentally altering the
             redistribution of carriers. Once SE and carrier
             redistribution is completed, a slower relaxation of up to 1
             ns for GaN and InGaN epilayers, and 660 ps for the multiple
             QW sample, indicates carrier recombination through
             spontaneous emission.},
   Doi = {10.1103/PhysRevB.67.155308},
   Key = {2003PhRvB..67o5308O}
}

@article{Ozgur:2003p1280,
   Author = {{\"O}zg{\"u}r, Umit and Everitt, HO},
   Title = {Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an
             In0.07Ga0.93N/In0.12Ga0.88N multiple quantum
             well},
   Journal = {Physical Review B (Condensed Matter and Materials
             Physics)},
   Volume = {67},
   Number = {15},
   Pages = {--},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2003},
   url = {http://prola.aps.org/abstract/PRB/v67/i15/e155308},
   Abstract = {Room-temperature, wavelength-nondegenerate ultrafast
             pump/probe measurements were performed on GaN and InGaN
             epilayers and an InGaN multiple quantum well (QW) structure.
             Carrier relaxation dynamics were investigated as a function
             of excitation wavelength and intensity. Spectrally resolved
             sub-picosecond relaxation due to carrier redistribution and
             QW capture was found to depend sensitively on the wavelength
             of pump excitation. Moreover, for pump intensities above a
             threshold of 100 muJ/cm(2), all samples demonstrated an
             additional emission feature arising from stimulated emission
             (SE). SE is evidenced as accelerated relaxation (<10 ps) in
             the pump-probe data, fundamentally altering the
             redistribution of carriers. Once SE and carrier
             redistribution is completed, a slower relaxation of up to 1
             ns for GaN and InGaN epilayers, and 660 ps for the multiple
             QW sample, indicates carrier recombination through
             spontaneous emission.},
   Language = {English},
   Doi = {10.1103/PhysRevB.67.155308},
   Key = {Ozgur:2003p1280}
}

@article{Ozgur:2002p1765,
   Author = {{\"O}zg{\"u}r, {\"U}mit and Everitt, Henry
             O},
   Title = {Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and
             an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum
             Well},
   Journal = {arXiv},
   Volume = {cond-mat.mes-hall},
   Year = {2002},
   Month = {January},
   url = {http://arxiv.org/abs/cond-mat/0210214v1},
   Keywords = {cond-mat.mes-hall, cond-mat.mtrl-sci},
   Abstract = {Room temperature, wavelength non-degenerate ultrafast
             pump/probe measurements were performed on GaN and InGaN
             epilayers and an InGaN multiple quantum well structure.
             Carrier relaxation dynamics were investigated as a function
             of excitation wavelength and intensity. Spectrally-resolved
             sub-picosecond relaxation due to carrier redistribution and
             QW capture was found to depend sensitively on the wavelength
             of pump excitation. Moreover, for pump intensities above a
             threshold of 100 microJ/cm2, all samples demonstrated an
             additional emission feature arising from stimulated emission
             (SE). SE is evidenced as accelerated relaxation (< 10 ps) in
             the pump-probe data, fundamentally altering the
             re-distribution of carriers. Once SE and carrier
             redistribution is completed, a slower relaxation of up to 1
             ns for GaN and InGaN epilayers, and 660 ps for the MQW
             sample, indicates carrier recombination through spontaneous
             emission.},
   Key = {Ozgur:2002p1765}
}

@article{2004SPIE.5352..158O,
   Author = {Ozgur, U and Everitt, HO and Keller, S and DenBaars, SP and He, L and Morkoc, H},
   Title = {Ultrafast carrier relaxation in group III-nitride multiple
             quantum wells},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {5352},
   Pages = {158-168},
   Organization = {Virginia Commonwealth Univ. (USA)},
   Institution = {Virginia Commonwealth Univ. (USA)},
   Year = {2004},
   ISBN = {0-8194-5260-2},
   ISSN = {0277-786X},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000222660600016&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {In this study, stimulated emission (SE) and ultrafast
             carrier relaxation are explored in InGaN and AlGaN/GaN
             multiple quantum wells (MQWs). The SE threshold densities
             (Ith) in InGaN MQWs increase with increasing QW depth. By
             contrast, no significant variation is observed in AlGaN/GaN
             MQWs with varying barrier height and growth conditions
             (Ga-rich and N-rich). Wavelength non-degenerate
             time-resolved differential transmission (TRDT) measurements
             reveal that increased non-radiative recombination and fast
             capture of carriers to the localized states below the SE
             energy in deeper InGaN MQWs are responsible for the
             increased Ith. At high excitation densities SE is shown to
             remove carriers efficiently from the QWs with a time
             constant of a few picoseconds, causing carriers at higher
             energies to cascade down and refill these SE-emptied states.
             The strength and decay times of the SE feature, which are
             resolved from the spectrally integrated TRDT data, are seen
             to vary as a function of excitation energy and density. The
             fast, SE-accelerated decay in AlGaN MQWs occurs more than
             twice as fast as in InGaN MQWs for similar excitation
             densities. More importantly, recombination times are an
             order of magnitude faster in AlGaN MQWs than in InGaN
             MQWs.},
   Doi = {10.1117/12.529426},
   Key = {2004SPIE.5352..158O}
}

@article{Ozgur:2000p1542,
   Author = {Ozgur, U and Bergmann, MJ and Casey, HC and Everitt, HO and Abare, AC and Keller, S and DenBaars, SP},
   Title = {Ultrafast optical characterization of carrier capture times
             in InxGa1-xN multiple quantum wells},
   Journal = {Applied Physics Letters},
   Volume = {77},
   Number = {1},
   Pages = {109-111},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2000},
   Month = {July},
   ISSN = {0003-6951},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000087889700037&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Subpicosecond wavelength-degenerate differential
             transmission optical spectroscopy was used to characterize
             the electron capture time in a 10-period InxGa1-xN
             multiple-quantum-well (MQW) structure. Photoluminescence and
             photoluminescence excitation spectroscopies demonstrated
             enhanced MQW emission for injection within +/- 50 meV of the
             barrier energy. Time-resolved differential transmission
             measurements for excitation in this region reveal efficient
             electron capture in the quantum wells with a time constant
             between 310 and 540 fs. A slower exponential relaxation,
             with strongly wavelength-dependent subnanosecond decay
             constants, is also observed. (C) 2000 American Institute of
             Physics. [S0003-6951(00)04527-7].},
   Language = {English},
   Key = {Ozgur:2000p1542}
}

@article{Yang:2013vx,
   Author = {Yang, Y and Callahan, J M and Kim, T H and Brown, A S and Everitt, H O},
   Title = {Ultraviolet nano-plasmonics: A demonstration of
             surface-enhanced Raman spectroscopy, fluorescence, and
             photo-degradation using gallium nanoparticles},
   Journal = {Nano Letters},
   Volume = {13},
   Number = {6},
   Pages = {2837--2841},
   Year = {2013},
   url = {http://pubs.acs.org/doi/abs/10.1021/nl401145j},
   Abstract = {Self-assembled arrays of hemispherical gallium nanoparticles
             deposited by molecular beam epitaxy on a sapphire support
             are explored as a new type of substrate for ultraviolet
             plasmonics . Spin casting a 5 nm film of crystal violet upon
             these nanoparticles permitted ...},
   Key = {Yang:2013vx}
}

@article{2013NanoL..13.2837Y,
   Author = {Yang, Y and Callahan, JM and Kim, T-H and Brown, AS and Everitt,
             HO},
   Title = {Ultraviolet nanoplasmonics: a demonstration of
             surface-enhanced Raman spectroscopy, fluorescence, and
             photodegradation using gallium nanoparticles.},
   Journal = {Nano Letters},
   Volume = {13},
   Number = {6},
   Pages = {2837-2841},
   Year = {2013},
   Month = {June},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/23659187},
   Abstract = {Self-assembled arrays of hemispherical gallium nanoparticles
             deposited by molecular beam epitaxy on a sapphire support
             are explored as a new type of substrate for ultraviolet
             plasmonics. Spin-casting a 5 nm film of crystal violet upon
             these nanoparticles permitted the demonstration of
             surface-enhanced Raman spectra, fluorescence, and
             degradation following excitation by a HeCd laser operating
             at 325 nm. Measured local Raman enhancement factors
             exceeding 10(7) demonstrate the potential of gallium
             nanoparticle arrays for plasmonically enhanced ultraviolet
             detection and remediation.},
   Doi = {10.1021/nl401145j},
   Key = {2013NanoL..13.2837Y}
}

@article{2012OExpr..20.1868M,
   Author = {Mattiucci, N and D'Aguanno, G and Everitt, HO and Foreman, JV and Callahan, JM and Buncick, MC and Bloemer, MJ},
   Title = {Ultraviolet surface-enhanced Raman scattering at the
             plasmonic band edge of a metallic grating.},
   Journal = {Optics express},
   Volume = {20},
   Number = {2},
   Pages = {1868-1877},
   Organization = {AEgis Tech, Nanogenesis Div, Huntsville, AL 35806
             USA},
   Institution = {AEgis Tech, Nanogenesis Div, Huntsville, AL 35806
             USA},
   Year = {2012},
   Month = {January},
   url = {http://www.nanogenesisgroup.com/PDFs/Journal},
   Abstract = {Surface-enhanced Raman Scattering (SERS) is studied in
             sub-wavelength metallic gratings on a substrate using a
             rigorous electromagnetic approach. In the ultraviolet SERS
             is limited by the metallic dampening, yet enhancements as
             large as 10(5) are predicted. It is shown that these
             enhancements are directly linked to the spectral position of
             the plasmonic band edge of the metal/substrate surface
             plasmon. A simple methodology is presented for selecting the
             grating pitch to produce optimal enhancement for a given
             laser frequency.},
   Language = {English},
   Doi = {10.1364/oe.20.001868},
   Key = {2012OExpr..20.1868M}
}

@article{fds324838,
   Author = {Yang, Y and Akozbek, N and Kim, T-H and Sanz, JM and Moreno, F and Losurdo,
             M and Brown, AS and Everitt, HO},
   Title = {Ultraviolet–Visible Plasmonic Properties of Gallium
             Nanoparticles Investigated by Variable-Angle Spectroscopic
             and Mueller Matrix Ellipsometry},
   Journal = {ACS Photonics},
   Volume = {1},
   Number = {7},
   Pages = {582-589},
   Year = {2014},
   Month = {July},
   url = {http://dx.doi.org/10.1021/ph500042v},
   Doi = {10.1021/ph500042v},
   Key = {fds324838}
}

@article{Scherer:1999vq,
   Author = {Scherer, A and Doll, T and Yablonovitch, E and Everitt, H and Higgins,
             A},
   Title = {Untitled},
   Journal = {IEEE Transactions on Microwave Theory and
             Techniques},
   Volume = {47},
   Number = {11},
   Pages = {2057-2058},
   Organization = {CALTECH, Dept Elect Engn, Pasadena, CA 91125
             USA},
   Institution = {CALTECH, Dept Elect Engn, Pasadena, CA 91125
             USA},
   Year = {1999},
   Month = {November},
   ISSN = {0018-9480},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000083406900001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Language = {English},
   Doi = {10.1109/TMTT.1999.798000},
   Key = {Scherer:1999vq}
}

@article{fds314121,
   Author = {Sanz, JM and Ortiz, D and Alcaraz De La Osa and R and Saiz, JM and González, F and Brown, AS and Losurdo, M and Everitt, HO and Moreno,
             F},
   Title = {UV plasmonic behavior of various metal nanoparticles in the
             near- and far-field regimes: Geometry and substrate
             effects},
   Journal = {The Journal of Physical Chemistry C},
   Volume = {117},
   Number = {38},
   Pages = {19606-19615},
   Year = {2013},
   Month = {September},
   ISSN = {1932-7447},
   url = {http://dx.doi.org/10.1021/jp405773p},
   Abstract = {The practical efficacy of technologically promising metals
             for use in ultraviolet plasmonics (3-6 eV) is assessed by an
             exhaustive numerical analysis. This begins with estimates of
             the near- and far-field electromagnetic enhancement factors
             of isolated hemispherical and spherical metallic
             nanoparticles deposited on typical dielectric substrates
             like sapphire, from which the potential of each metal for
             plasmonic applications may be ascertained. The ultraviolet
             plasmonic behavior of aluminum, chromium, copper, gallium,
             indium, magnesium, palladium, platinum, rhodium, ruthenium,
             titanium, and tungsten was compared with the well-known
             behavior of gold and silver in the visible. After exploring
             this behavior for each metal as a function of nanoparticle
             shape and size, the deleterious effect caused by the metal's
             native oxide is considered, and the potential for
             applications such as surface-enhanced Raman spectroscopy,
             accelerated photodegradation and photocatalysis is
             addressed. © 2013 American Chemical Society.},
   Doi = {10.1021/jp405773p},
   Key = {fds314121}
}

@article{Sanz:2013uj,
   Author = {Sanz, J M and Ortiz, D and de la Osa, R Alcaraz and Saiz, J
             M and Gonz{\'a}lez, F and Brown, April S and Losurdo, Maria and Everitt, Henry O and Moreno, Fernando},
   Title = {UV Plasmonic Behavior of Various Metal Nanoparticles in the
             Near-and Far-Field Regimes: Geometry and Substrate
             Effects},
   Journal = {The Journal of Physical Chemistry C},
   Volume = {117},
   Pages = {19606--19615},
   Year = {2013},
   Month = {August},
   url = {http://pubs.acs.org/doi/abs/10.1021/jp405773p},
   Abstract = {The practical efficacy of technologically promising metals
             for use in ultraviolet plasmonics (3- 6 eV) is assessed by
             an exhaustive numerical analysis. This begins with estimates
             of the near- field and far - field electromagnetic
             enhancement factors of isolated hemispherical
             ...},
   Key = {Sanz:2013uj}
}

@article{2002MNRAS.335..621S,
   Author = {Strader, Jay and Everitt, Henry O and Danford,
             Stephen},
   Title = {Variable stars in the core of the globular cluster
             M3},
   Journal = {Monthly Notices Of The Royal Astronomical
             Society},
   Volume = {335},
   Number = {3},
   Pages = {621--627},
   Organization = {Department of Physics, Duke University, Box 90305, Durham,
             NC 27708, USA},
   Institution = {Department of Physics, Duke University, Box 90305, Durham,
             NC 27708, USA},
   Year = {2002},
   Month = {September},
   url = {http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002MNRAS.335..621S&link_type=ABSTRACT},
   Abstract = {We present the results of a survey for variable stars in the
             core of the globular cluster M3. Our findings include the
             discovery of 11 new or suspected variables, including a
             possible W Vir, and the first period determinations for 13
             previously known variables.},
   Language = {English},
   Doi = {10.1046/j.1365-8711.2002.05645.x},
   Key = {2002MNRAS.335..621S}
}

@article{Strader:2002p1543,
   Author = {Strader, J and Everitt, HO and Danford, S},
   Title = {Variable stars in the core of the globular cluster
             M3},
   Journal = {Monthly Notices of the Royal Astronomical
             Society},
   Volume = {335},
   Number = {3},
   Pages = {621-627},
   Organization = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Institution = {Duke Univ, Dept Phys, Durham, NC 27708 USA},
   Year = {2002},
   Month = {September},
   ISSN = {0035-8711},
   url = {http://links.isiglobalnet2.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=mekentosj&SrcApp=Papers&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000178283100016},
   Abstract = {We present the results of a survey for variable stars in the
             core of the globular cluster M3. Our findings include the
             discovery of 11 new or suspected variables, including a
             possible W Vir, and the first period determinations for 13
             previously known variables.},
   Language = {English},
   Doi = {10.1046/j.1365-8711.2002.05645.x},
   Key = {Strader:2002p1543}
}


%% Preprints   
@inproceedings{Heimbeck:2010cy,
   Author = {Heimbeck, MS and Everitt, HO and Taylor, K and Davis, C and Hamilton, E and Thomas, DE and Reardon, PJ and Hesler, J},
   Title = {Instrumentation for Beam Profiling in the Terahertz
             Regime},
   Journal = {Proceedings of SPIE - The International Society for Optical
             Engineering},
   Volume = {7671},
   Pages = {76710J--76710J--12},
   Booktitle = {Terahertz Physics, Devices, and Systems IV: Advanced
             Applications in Industry and Defense},
   Publisher = {SPIE},
   Year = {2010},
   ISSN = {0277-786X},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000284871000014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {The standalone, portable Terahertz (THz) Imaging Profiler
             Array (TIPA) based on an Offner Relay design has been
             constructed as a THz beam profiler and multispectral imager.
             It integrates a solid-state detector technology (Schottky
             Diodes) that can be configured in an array to cover the
             frequency range from 0.60 to 0.90 THz. The reconfigurable 16
             element Schottky diode detector array is utilized along with
             imaging and scanning mirror modules and system control
             hardware and software to produce high spatial or temporal
             beam profiles of THz beams. Images of THz source profiles
             are presented along with THz images of relevant targets.
             Potential applications are discussed.},
   Doi = {10.1117/12.849932},
   Key = {Heimbeck:2010cy}
}


%% Other   
@phdthesis{Everitt:1990p846,
   Author = {Everitt, Henry O},
   Title = {Collisional Energy Transfer in Methyl Halides},
   Publisher = {Duke University},
   Organization = {Department of Physics},
   Institution = {Department of Physics},
   Year = {1990},
   Month = {August},
   Key = {Everitt:1990p846}
}