Publications of Stephen W. Teitsworth    :chronological  alphabetical  combined listing:

%% Books   
@book{fds167377,
   Author = {Luis Bonilla and Stephen Teitsworth},
   Title = {Nonlinear wave methods for electronic transport in condensed
             matter systems},
   Publisher = {Wiley - VCF},
   Year = {2010},
   Key = {fds167377}
}


%% Papers Published   
@article{fds325702,
   Author = {Ghanta, A and Neu, JC and Teitsworth, S},
   Title = {Fluctuation loops in noise-driven linear dynamical
             systems},
   Journal = {Physical review. E},
   Volume = {95},
   Number = {3},
   Year = {2017},
   Month = {March},
   url = {http://dx.doi.org/10.1103/PhysRevE.95.032128},
   Doi = {10.1103/PhysRevE.95.032128},
   Key = {fds325702}
}

@article{fds248435,
   Author = {Dannenberg, PH and Neu, JC and Teitsworth, SW},
   Title = {Steering most probable escape paths by varying relative
             noise intensities.},
   Journal = {Physical Review Letters},
   Volume = {113},
   Number = {2},
   Pages = {020601},
   Publisher = {American Physical Society},
   Year = {2014},
   Month = {July},
   ISSN = {0031-9007},
   url = {http://dx.doi.org/10.1103/physrevlett.113.020601},
   Abstract = {We demonstrate the possibility to systematically steer the
             most probable escape paths (MPEPs) by adjusting relative
             noise intensities in dynamical systems that exhibit
             noise-induced escape from a metastable point via a saddle
             point. With the use of a geometric minimum action approach,
             an asymptotic theory is developed that is broadly applicable
             to fast-slow systems and shows the important role played by
             the nullcline associated with the fast variable in locating
             the MPEPs. A two-dimensional quadratic system is presented
             which permits analytical determination of both the MPEPs and
             associated action values. Analytical predictions agree with
             computed MPEPs, and both are numerically confirmed by
             constructing prehistory distributions directly from the
             underlying stochastic differential equation.},
   Doi = {10.1103/physrevlett.113.020601},
   Key = {fds248435}
}

@article{fds304625,
   Author = {Bomze, Y and Hey, R and Grahn, HT and Teitsworth,
             SW},
   Title = {Noise-induced current switching in semiconductor
             superlattices: observation of nonexponential kinetics in a
             high-dimensional system.},
   Journal = {Physical Review Letters},
   Volume = {109},
   Number = {2},
   Pages = {026801},
   Year = {2012},
   Month = {July},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/23030192},
   Abstract = {We report on measurements of first-passage-time
             distributions associated with current switching in weakly
             coupled GaAs/AlAs superlattices driven by shot noise, a
             system that is both far from equilibrium and high
             dimensional. Static current-voltage (I-V) characteristics
             exhibit multiple current branches and bistability;
             precision, high-bandwidth current switching data are
             collected in response to steps in the applied voltage to
             final voltages V1 near the end of a current branch. For a
             range of V1 values, the measured switching times vary
             stochastically. At short times (≲10  μs), the
             switching time distributions decay exponentially, while at
             longer times the distributions develop nonexponential tails
             that follow an approximate power law over several decades.
             The power law decay behavior is attributed to the presence
             of multiple switching pathways, which may arise from small
             spatial variations in the superlattice growth
             parameters.},
   Doi = {10.1103/PhysRevLett.109.026801},
   Key = {fds304625}
}

@article{fds248452,
   Author = {Bomze, Y and Hey, R and Grahn, HT and Teitsworth,
             SW},
   Title = {Noise-Induced Current Switching in Semiconductor
             Superlattices: Observation of Nonexponential Kinetics in a
             High-Dimensional System},
   Journal = {Physical Review Letters},
   Volume = {109},
   Number = {026801},
   Pages = {4},
   Publisher = {American Physical Society},
   Year = {2012},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/23030192},
   Abstract = {We report on measurements of first-passage-time
             distributions associated with current switching in weakly
             coupled GaAs/AlAs superlattices driven by shot noise, a
             system that is both far from equilibrium and high
             dimensional. Static current-voltage (I-V) characteristics
             exhibit multiple current branches and bistability;
             precision, high-bandwidth current switching data are
             collected in response to steps in the applied voltage to
             final voltages near the end of a current branch. For a range
             of voltage values, the measured switching times vary
             stochastically. At short times, the switching time
             distributions decay exponentially, while at longer times the
             distributions develop nonexponential tails that follow an
             approximate power law over several decades. The power law
             decay behavior is attributed to the presence of multiple
             switching pathways, which may arise from small spatial
             variations in the superlattice growth parameters.},
   Doi = {10.1103/PhysRevLett.109.026801},
   Key = {fds248452}
}

@article{fds248436,
   Author = {Bonilla, LL and Teitsworth, SW},
   Title = {Nonlinear Wave Methods for Charge Transport},
   Journal = {Nonlinear Wave Methods for Charge Transport},
   Year = {2010},
   Month = {September},
   url = {http://dx.doi.org/10.1002/9783527628674},
   Abstract = {The present book introduces and develops mathematical
             techniques for the treatment of nonlinear waves and singular
             perturbation methods at a level that is suitable for
             graduate students, researchers and faculty throughout the
             natural sciences and engineering. The practice of
             implementing these techniques and their value are largely
             realized by showing their application to problems of
             nonlinear wave phenomena in electronic transport in solid
             state materials, especially bulk semiconductors and
             semiconductor superlattices. The authors are recognized
             leaders in this field, with more than 30 combined years of
             contributions. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA. All
             rights reserved.},
   Doi = {10.1002/9783527628674},
   Key = {fds248436}
}

@article{fds248437,
   Author = {Bonilla, LL and Teitsworth, SW},
   Title = {Nonlinear Wave Methods for Charge Transport},
   Journal = {Nonlinear Wave Methods for Charge Transport},
   Year = {2010},
   url = {http://dx.doi.org/10.1002/9783527628674},
   Abstract = {The present book introduces and develops mathematical
             techniques for the treatment of nonlinear waves and singular
             perturbation methods at a level that is suitable for
             graduate students, researchers and faculty throughout the
             natural sciences and engineering. The practice of
             implementing these techniques and their value are largely
             realized by showing their application to problems of
             nonlinear wave phenomena in electronic transport in solid
             state materials, especially bulk semiconductors and
             semiconductor superlattices. The authors are recognized
             leaders in this field, with more than 30 combined years of
             contributions. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
             All rights reserved.},
   Doi = {10.1002/9783527628674},
   Key = {fds248437}
}

@article{fds248449,
   Author = {Xu, H and Teitsworth, SW},
   Title = {Emergence of current branches in a series array of negative
             differential resistance circuit elements},
   Journal = {Journal of Applied Physics},
   Volume = {108},
   Number = {4},
   Pages = {4 pages},
   Year = {2010},
   ISSN = {0021-8979},
   url = {http://arxiv.org/abs/1006.0434v1},
   Abstract = {We study a series array of nonlinear electrical circuit
             elements that possess negative differential resistance and
             find that heterogeneity in the element properties leads to
             the presence of multiple branches in current-voltage curves
             and a nonuniform distribution of voltages across the
             elements. An inhomogeneity parameter rmax is introduced to
             characterize the extent to which the individual element
             voltages deviate from one another, and it is found to be
             strongly dependent on the rate of change of applied voltage.
             Analytical expressions are derived for the dependence of
             rmax on voltage ramping rate in the limit of fast ramping
             and are confirmed by direct numerical simulation. © 2010
             American Institute of Physics.},
   Doi = {10.1063/1.3475988},
   Key = {fds248449}
}

@article{fds248450,
   Author = {Xu, H and Teitsworth, SW},
   Title = {On the possibility of a shunt-stabilized superlattice
             terahertz emitter},
   Journal = {Applied Physics Letters},
   Volume = {96},
   Number = {2},
   Year = {2010},
   ISSN = {0003-6951},
   url = {http://hdl.handle.net/10161/3244 Duke open
             access},
   Abstract = {High field electronic transport through a strongly coupled
             superlattice (SL) with a shunting side layer is numerically
             studied using a drift-diffusion model that includes both
             vertical and lateral dynamics. The bias voltage corresponds
             to an average electric field in the negative differential
             conductivity region of the intrinsic current-field curve of
             the SL, a condition that generally implies space charge
             instability. Key structural parameters associated with both
             the shunt layer and SL are identified for which the shunt
             layer stabilizes a uniform electric field profile. These
             results support the possibility to realize a SL-based
             terahertz oscillator with a carefully designed structure. ©
             2010 American Institute of Physics.},
   Doi = {10.1063/1.3291614},
   Key = {fds248450}
}

@article{fds248454,
   Author = {Xu, H and Teitsworth, SW},
   Title = {On the possibility of a shunt-stabilized superlattice THz
             emitter},
   Journal = {Applied Physics Letters},
   Volume = {96},
   Number = {022101},
   Pages = {3 pages},
   Year = {2010},
   Abstract = {High field electronic transport through a strongly-coupled
             superlattice (SL) with a shunting side layer is numerically
             studied using a novel drift-diffusion model. The bias
             voltage corresponds to an average electric field in the
             negative differential conductivity (NDC) region of the
             intrinsic current-field (I ¡ F) curve of the SL, a
             condition that generally implies space charge instability.
             Key structural parameters associated with both the shunt
             layer and SL are identified for which the shunt layer
             stabilizes a uniform electric field profile. These results
             support the possibility to realize a SL-based THz oscillator
             with a carefully designed structure.},
   Key = {fds248454}
}

@article{fds248455,
   Author = {Heinrich, M and Dahms, T and Flunkert, V and Teitsworth, SW and Schöll,
             E},
   Title = {Symmetry-breaking transitions in networks of nonlinear
             circuit elements},
   Journal = {New Journal of Physics},
   Volume = {12},
   Number = {113030},
   Pages = {32 pages},
   Year = {2010},
   ISSN = {1367-2630},
   url = {http://dx.doi.org/10.1088/1367-2630/12/11/113030},
   Abstract = {We investigate a nonlinear circuit consisting of N tunnel
             diodes in series, which shows close similarities to a
             semiconductor superlattice or to a neural network. Each
             tunnel diode is modeled by a three-variable
             FitzHugh-Nagumo-like system. The tunnel diodes are coupled
             globally through a load resistor. We find complex
             bifurcation scenarios with symmetry-breaking transitions
             that generate multiple fixed points off the synchronization
             manifold. We show that multiply degenerate zero-eigenvalue
             bifurcations occur, which lead to multistable current
             branches, and that these bifurcations are also degenerate
             with a Hopf bifurcation. These predicted scenarios of
             multiple branches and degenerate bifurcations are also found
             experimentally. © IOP Publishing Ltd and Deutsche
             Physikalische Gesellschaft.},
   Doi = {10.1088/1367-2630/12/11/113030},
   Key = {fds248455}
}

@article{fds248456,
   Author = {Xu, H and Amann, A and Schoell, E and Teitsworth,
             SW},
   Title = {Dynamics of electronic transport in a semiconductor
             superlattice with a shunting side layer},
   Journal = {Physical Review B},
   Volume = {79},
   Number = {245318},
   Pages = {14},
   Year = {2009},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.79.245318},
   Abstract = {We study a model describing electronic transport in a weakly
             coupled semiconductor superlattice with a shunting side
             layer. Key parameters include the lateral size of the
             superlattice, the connectivity between the quantum wells of
             the superlattice and the shunt layer, and the conduction
             properties of the shunt layer. For a superlattice with small
             lateral extent and high quality shunt, static electric field
             domains are suppressed and a spatially uniform field
             configuration is predicted to be stable, results that may be
             useful for proposed devices such as a superlattice-based
             terahertz oscillators. As the lateral size of the
             superlattice increases, the uniform field configuration
             loses its stability to either static or dynamic field
             domains regardless of shunt properties. A lower quality
             shunt generally leads to regular and chaotic current
             oscillations and complex spatiotemporal dynamics in the
             field profile. Bifurcations separating static and dynamic
             behaviors are characterized and found to be dependent on the
             shunt properties.},
   Doi = {10.1103/PhysRevB.79.245318},
   Key = {fds248456}
}

@article{fds304624,
   Author = {Xu, H and Amann, A and Schöll, E and Teitsworth,
             SW},
   Title = {Dynamics of electronic transport in a semiconductor
             superlattice with a shunting side layer},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {79},
   Number = {24},
   Year = {2009},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.79.245318},
   Abstract = {We study a model describing electronic transport in a weakly
             coupled semiconductor superlattice with a shunting side
             layer. Key parameters include the lateral size of the
             superlattice, the connectivity between the quantum wells of
             the superlattice and the shunt layer, and the conduction
             properties of the shunt layer. For a superlattice with small
             lateral extent and high quality shunt, static electric field
             domains are suppressed and a spatially uniform field
             configuration is predicted to be stable, results that may be
             useful for proposed devices such as a superlattice-based
             terahertz oscillators. As the lateral size of the
             superlattice increases, the uniform field configuration
             loses its stability to either static or dynamic field
             domains regardless of shunt properties. A lower quality
             shunt generally leads to regular and chaotic current
             oscillations and complex spatiotemporal dynamics in the
             field profile. Bifurcations separating static and dynamic
             behaviors are characterized and found to be dependent on the
             shunt properties. © 2009 The American Physical
             Society.},
   Doi = {10.1103/PhysRevB.79.245318},
   Key = {fds304624}
}

@article{fds248453,
   Author = {Xu, H and Teitsworth, SW},
   Title = {Dependence of electric field domain relocation dynamics on
             contact conductivity in semiconductor superlattices},
   Journal = {Physical Review B},
   Volume = {76},
   Number = {235302},
   Pages = {11 pages},
   Year = {2007},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.76.235302},
   Abstract = {Numerical simulation results are presented for a discrete
             drift-diffusion rate equation model that describes
             electronic transport due to sequential tunneling between
             adjacent quantum wells in weakly coupled semiconductor
             superlattices. We study the dependence on contact
             conductivity σ of current-voltage characteristics and
             transient current response to abrupt steps in applied
             voltage. For intermediate values of σ, three qualitatively
             distinct transient responses—each associated with a
             different mechanism for the relocation of a static charge
             accumulation layer—are observed for different values of
             voltage step Vstep; these involve, respectively, (1) the
             motion of a single charge accumulation layer, (2) the motion
             of an injected charge dipole, and (3) the motion of an
             injected monopole. A critical value of σ is identified
             above which the injected dipole mechanism is not observed
             for any value of Vstep. Furthermore, at very low σ, we find
             a reversed static field configuration, i.e., with the
             high-field domain adjacent to the emitter
             contact.},
   Doi = {10.1103/PhysRevB.76.235302},
   Key = {fds248453}
}

@article{fds304623,
   Author = {Xu, H and Teitsworth, SW},
   Title = {Dependence of electric field domain relocation dynamics on
             contact conductivity in semiconductor superlattices},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {76},
   Number = {23},
   Year = {2007},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.76.235302},
   Abstract = {Numerical simulation results are presented for a discrete
             drift-diffusion rate equation model that describes
             electronic transport due to sequential tunneling between
             adjacent quantum wells in weakly coupled semiconductor
             superlattices. We study the dependence on contact
             conductivity σ of current-voltage characteristics and
             transient current response to abrupt steps in applied
             voltage. For intermediate values of σ, three qualitatively
             distinct transient responses-each associated with a
             different mechanism for the relocation of a static charge
             accumulation layer-are observed for different values of
             voltage step Vstep; these involve, respectively, (1) the
             motion of a single charge accumulation layer, (2) the motion
             of an injected charge dipole, and (3) the motion of an
             injected monopole. A critical value of σ is identified
             above which the injected dipole mechanism is not observed
             for any value of Vstep. Furthermore, at very low σ, we find
             a reversed static field configuration, i.e., with the
             high-field domain adjacent to the emitter contact. © 2007
             The American Physical Society.},
   Doi = {10.1103/PhysRevB.76.235302},
   Key = {fds304623}
}

@article{fds248458,
   Author = {Lu, SL and Schrottke, L and Teitsworth, SW and Hey, R and Grahn,
             HT},
   Title = {Negative differential conductance and bistability in undoped
             GaAs/AlGaAs quantum-cascade structures},
   Journal = {Journal of Applied Physics},
   Volume = {100},
   Number = {023701},
   Pages = {6 pages},
   Year = {2006},
   Month = {July},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.2214362},
   Abstract = {We discuss the mechanisms for negative differential
             conductance NDC and bistable behavior observed in the
             current-density–electric-field j-F characteristics of
             undoped GaAs/Al0.45Ga0.55As quantum-cascade structures QCSs
             . While the j-F characteristic of a QCS with a single period
             exhibits NDC without bistability, NDC and a bistable
             behavior are observed for a QCS with 20 periods of the same
             design. Calculations using a scattering-rate model
             neglecting any field inhomogeneities show that the interplay
             of resonant tunneling between the states in the QCS with
             resonant scattering of longitudinal optical phonons can lead
             to NDC in both structures. However, the bistable behavior in
             the QCS with 20 periods can only be explained if an
             inhomogeneous field distribution due to charge accumulation
             is taken into account in addition to the NDC. The abrupt
             decrease of the current density at the field strength of the
             bistability is attributed to a rapid decrease of the
             accumulated charge, which is confirmed by
             electric-field-dependent photoluminescence
             spectroscopy.},
   Doi = {10.1063/1.2214362},
   Key = {fds248458}
}

@article{fds248457,
   Author = {Lu, SL and Schrottke, L and Teitsworth, SW and Hey, R and Grahn,
             HT},
   Title = {Formation of electric-field domains in GaAs/AlGaAs quantum
             cascade laser structures},
   Journal = {Physical Review B},
   Volume = {73},
   Number = {033311},
   Pages = {4 pages},
   Year = {2006},
   Month = {January},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.73.033311},
   Abstract = {The current-voltage (I-V ) characteristics of GaAs/AlGaAs
             quantum-cascade laser structures (QCLSs) are found to
             exhibit current plateaus with discontinuities for voltages
             below threshold. The number of current discontinuities is
             correlated with the number of periods of the QCLS,
             suggesting the formation of electric-field domains that span
             the entire structure. A self-consistent calculation of the
             conduction band profile and corresponding electronic wave
             functions shows that the low-field domain is related to
             resonant tunneling between the ground state g in the active
             region and the lowest energy state in the adjacent,
             downstream injector i1. For x = 0.33 (x = 0.45), the
             high-field domain is formed for resonant tunneling between g
             and the first (second) excited state i2 (i3) in the injector
             region. A comparison of the experimental data with the
             calculated conduction band profile shows that a significant
             field inhomogeneity within each period shifts the voltage
             range, for which the resonance condition is fulfilled, to
             much lower voltages than expected for a homogeneous field
             distribution.},
   Doi = {10.1103/PhysRevB.73.033311},
   Key = {fds248457}
}

@article{fds304621,
   Author = {Lu, SL and Schrottke, L and Teitsworth, SW and Hey, R and Grahn,
             HT},
   Title = {Formation of electric-field domains in GaAs Alx Ga1-x As
             quantum cascade laser structures},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {73},
   Number = {3},
   Year = {2006},
   ISSN = {1098-0121},
   url = {http://dx.doi.org/10.1103/PhysRevB.73.033311},
   Abstract = {The current-voltage (I-V) characteristics of GaAs Alx Ga1-x
             As quantum cascade laser structures (QCLSs) are found to
             exhibit current plateaus with discontinuities for voltages
             below threshold. The number of current discontinuities is
             correlated with the number of periods of the QCLS,
             suggesting the formation of electric-field domains that span
             the entire structure. A self-consistent calculation of the
             conduction band profile and corresponding electronic wave
             functions shows that the low-field domain is related to
             resonant tunneling between the ground state g in the active
             region and the lowest energy state in the adjacent,
             downstream injector i1. For x=0.33 (x=0.45), the high-field
             domain is formed for resonant tunneling between g and the
             first (second) excited state i2 (i3) in the injector region.
             A comparison of the experimental data with the calculated
             conduction band profile shows that a significant field
             inhomogeneity within each period shifts the voltage range,
             for which the resonance condition is fulfilled, to much
             lower voltages than expected for a homogeneous field
             distribution. © 2006 The American Physical
             Society.},
   Doi = {10.1103/PhysRevB.73.033311},
   Key = {fds304621}
}

@article{fds304622,
   Author = {Lu, SL and Schrottke, L and Teitsworth, SW and Hey, R and Grahn,
             HT},
   Title = {Negative differential conductance and bistability in undoped
             GaAs/(Al,Ga)As quantum-cascade structures},
   Journal = {Journal of Applied Physics},
   Volume = {100},
   Number = {2},
   Year = {2006},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.2214362},
   Abstract = {We discuss the mechanisms for negative differential
             conductance (NDC) and bistable behavior observed in the
             current-density-electric-field (j-F) characteristics of
             undoped GaAs/Al 0.45Ga 0.55As quantum-cascade structures
             (QCSs). While the j-F characteristic of a QCS with a single
             period exhibits NDC without bistability, NDC and a bistable
             behavior are observed for a QCS with 20 periods of the same
             design. Calculations using a scattering-rate model
             neglecting any field inhomogeneities show that the interplay
             of resonant tunneling between the states in the QCS with
             resonant scattering of longitudinal optical phonons can lead
             to NDC in both structures. However, the bistable behavior in
             the QCS with 20 periods can only be explained if an
             inhomogeneous field distribution due to charge accumulation
             is taken into account in addition to the NDC. The abrupt
             decrease of the current density at the field strength of the
             bistability is attributed to a rapid decrease of the
             accumulated charge, which is confirmed by
             electric-field-dependent photoluminescence spectroscopy. ©
             2006 American Institute of Physics.},
   Doi = {10.1063/1.2214362},
   Key = {fds304622}
}

@article{fds248490,
   Author = {Rogozia, M and Teitsworth, SW and Grahn, HT and Ploog,
             KH},
   Title = {Relocation dynamics of domain boundaries in semiconductor
             superlattices},
   Journal = {Physical Review B},
   Volume = {65},
   Number = {205303},
   Pages = {1-7},
   Year = {2002},
   ISSN = {0163-1829},
   Abstract = {The formation of static electric-field domains in doped
             semiconductor superlattices appears in the current-voltage
             (I-V) characteristics as multiple current branches separated
             by abrupt discontinuities. The switching dynamics of the
             charge-accumulation layer forming the domain boundary is
             experimentally investigated at dc voltages in the first
             plateau of the I-V characteristic for different polarities
             and amplitudes of the applied voltage steps. When the
             voltage is decreased (down jumps) from its initial dc value,
             the accumulation layer can directly move from its initial
             position to its final position, in accordance with the
             direction of the applied voltage step. However, when the
             voltage is increased (up jumps), there are two different
             modes of the relocation motion of the accumulation layer.
             For small up jumps, the accumulation layer can still move
             directly from its initial to its final position. When the
             amplitude of the transient current peak is above a critical
             value, a charge dipole is injected at the emitter contact,
             in addition to the existing monopole formed by the domain
             boundary. The experimentally observed switching behavior is
             in excellent qualitative agreement with recent theoretical
             work [A. Amann et al., Phys. Rev. E 63, 066207
             (2001)].},
   Key = {fds248490}
}

@article{fds248491,
   Author = {Rogozia, M and Grahn, HT and Teitsworth, SW and Ploog,
             KH},
   Title = {Time distribution of the domain-boundary relocation in
             superlattices},
   Journal = {Physica B: Condensed Matter},
   Volume = {314},
   Number = {1-4},
   Pages = {427-430},
   Year = {2002},
   ISSN = {0921-4526},
   url = {http://dx.doi.org/10.1016/S0921-4526(01)01387-4},
   Abstract = {Static domain formation in doped, weakly coupled
             semiconductor superlattices results in several current
             branches separated by discontinuities that exhibit
             hysteresis. The transition from one branch to its adjacent
             higher and lower one is studied by time-resolved switching
             experiments. The distribution function of the relocation
             time for up and down jumps changes from a simple Gaussian to
             a first-passage time (FPT) form, when the final voltage on
             the adjacent branch approaches a discontinuity in the
             current-voltage characteristic. This observation indicates
             that for a smaller voltage distance from the discontinuity
             (FPT distribution) the system reaches the final state via an
             unstable intermediate state. In contrast, for a larger
             voltage distance from the discontinuity (Gaussian
             distribution), the system arrives directly at the final
             state, because the intermediate state does not exist. ©
             2002 Elsevier Science B.V. All rights reserved.},
   Doi = {10.1016/S0921-4526(01)01387-4},
   Key = {fds248491}
}

@article{fds304620,
   Author = {Rogozia, M and Teitsworth, SW and Grahn, HT and Ploog,
             KH},
   Title = {Relocation dynamics of domain boundaries in semiconductor
             superlattices},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {65},
   Number = {20},
   Pages = {2053031-2053037},
   Year = {2002},
   ISSN = {0163-1829},
   Abstract = {The formation of static electric-field domains in doped
             semiconductor superlattices appears in the current-voltage
             (I-V) characteristics as multiple current branches separated
             by abrupt discontinuities. The switching dynamics of the
             charge-accumulation layer forming the domain boundary is
             experimentally investigated at dc voltages in the first
             plateau of the I-V characteristic for different polarities
             and amplitudes of the applied voltage steps. When the
             voltage is decreased (down jumps) from its initial dc value,
             the accumulation layer can directly move from its initial
             position to its final position, in accordance with the
             direction of the applied voltage step. However, when the
             voltage is increased (up jumps), there are two different
             modes of the relocation motion of the accumulation layer.
             For small up jumps, the accumulation layer can still move
             directly from its initial to its final position. When the
             amplitude of the transient current peak is above a critical
             value, a charge dipole is injected at the emitter contact,
             in addition to the existing monopole formed by the domain
             boundary. The experimentally observed switching behavior is
             in excellent qualitative agreement with recent theoretical
             work [A. Amann et al., Phys. Rev. E 63, 066207
             (2001)].},
   Key = {fds304620}
}

@article{fds4222,
   Author = {K. J. Luo and S.W. Teitsworth and M. Rogozia and H. T. Grahn and L.
             Bonilla, J. Galan and N. Ohtani},
   Title = {Controllable bifurcation processes in undoped, photoexcited
             GaAs/AlAs superlattices},
   Series = {World Scientific},
   Booktitle = {Proceedings of the 5th experimental chaos
             conference},
   Editor = {M. Ding et al.},
   Year = {2001},
   Key = {fds4222}
}

@article{fds248441,
   Author = {Cantalapiedra, IR and Bergmann, MJ and Bonilla, LL and Teitsworth,
             SW},
   Title = {Chaotic motion of space charge wave fronts in semiconductors
             under time-independent voltage bias},
   Journal = {Physical Review E - Statistical, Nonlinear, and Soft Matter
             Physics},
   Volume = {63},
   Number = {5 II},
   Pages = {562161-562167},
   Year = {2001},
   url = {http://arxiv.org/abs/cond-mat/0011162v1},
   Abstract = {The chaos under dc voltage bias linked with multiple
             shedding of wave fronts were numerically simulated. Space
             charge wave dynamics was analyzed with a finite-dimensional
             model. Drift diffusion model of space charge wave
             propagation in semiconductors was studied. The dynamics of
             space charge waves and current vs time were explained by
             asymptotic analysis of a partial differential equation
             model. It was found that single or multiple wave shedding
             during each oscillation depend on resistivity of the
             injecting contacts.},
   Doi = {10.1103/PhysRevE.63.056216},
   Key = {fds248441}
}

@article{fds248487,
   Author = {Rogozia, M and Teitsworth, SW and Grahn, HT and Ploog,
             K},
   Title = {Statistics of the domain boundary relocation time in
             semiconductor superlattices},
   Journal = {Physical Review B - Rapid Communications},
   Volume = {64},
   Number = {041308},
   Pages = {1-4},
   Year = {2001},
   ISSN = {0163-1829},
   Abstract = {Static domain formation in doped semiconductor superlattices
             results in several current branches separated by abrupt
             discontinuities that exhibit hysteresis. The transition from
             one branch to its adjacent one is studied by time-resolved
             switching experiments. The mean value of the relocation time
             increases by more than one order of magnitude, when the
             final voltage on the adjacent branch is reduced to a value
             approaching the discontinuity. At the same time, the
             distribution function of the relocation time changes from a
             simple Gaussian to a first-passage time form.},
   Key = {fds248487}
}

@article{fds304619,
   Author = {Rogozia, M and Teitsworth, SW and Grahn, HT and Ploog,
             KH},
   Title = {Statistics of the domain-boundary relocation time in
             semiconductor superlattices},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {64},
   Number = {4},
   Pages = {413081-413084},
   Year = {2001},
   ISSN = {0163-1829},
   Abstract = {Static domain formation in doped semiconductor superlattices
             results in several current branches separated by abrupt
             discontinuities that exhibit hysteresis. The transition from
             one branch to its adjacent one is studied by time-resolved
             switching experiments. The mean value of the relocation time
             increases by more than one order of magnitude, when the
             final voltage on the adjacent branch is reduced to a value
             approaching the discontinuity. At the same time, the
             distribution function of the relocation time changes from a
             simple Gaussian to a first-passage time form.},
   Key = {fds304619}
}

@article{fds4224,
   Author = {S.W. Teitsworth},
   Title = {Quantum chaos effects in mechanical wave
             systems},
   Series = {Springer-Verlag},
   Booktitle = {Proceedings of the 16th Sitges conference},
   Editor = {D. Reguera et al.},
   Year = {2000},
   Key = {fds4224}
}

@article{fds248488,
   Author = {Olafsen, LJ and Daniels-Race, T and Kendall, RE and Teitsworth,
             SW},
   Title = {Photoluminescence of n-i-n GaAs/AlAs single quantum well
             structures under electric field bias},
   Journal = {Superlattices and Microstructures},
   Volume = {27},
   Number = {1},
   Pages = {7-14},
   Year = {2000},
   ISSN = {0749-6036},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000085519800006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {GaAs/AlAs single quantum well structures designed with well
             thickness near the type-I/type-II crossover show distinctive
             photoluminescence peaks corresponding to both type-I and
             type-II recombinations. Photoluminescence measurements as a
             function of applied electric field and temperature ranging
             from 23 to 180 K and current-voltage measurements are
             presented for two MBE-grown structures clad with Si-doped
             Al0.45Ga0.55As layers on n+-GaAs [100] substrates. The large
             and field-dependent energy separation between type-I and
             type-II luminescence peaks is understood to arise from the
             build-up of electrons at the X point in the AlAs
             barrier.},
   Doi = {10.1006/spmi.1999.0811},
   Key = {fds248488}
}

@article{fds248489,
   Author = {Luo, KJ and Teitsworth, SW and Kostial, H and Grahn, HT and Ohtani,
             N},
   Title = {Controllable bistabilities and bifurcations in a
             photoexcited GaAs/AlAs superlattice},
   Journal = {Applied Physics Letters},
   Volume = {74},
   Number = {25},
   Pages = {3845-3847},
   Year = {1999},
   Abstract = {Self-sustained photocurrent oscillations and bifurcation
             process have been demonstrated on an undoped photoexcited
             GaAs/AlAs superlattice. The effects of carrier density,
             varied by changing the laser intensity, on the transition
             between static and oscillating domains are investigated.
             Within a certain range of intermediate intensities, the
             time-average photocurrent vs voltage plot exhibits a
             controllable bistability region near the edge of the first
             photocurrent plateau and the oscillations disappear via a
             subcritical Hopf bifurcation (HB) with increasing DC bias.
             Below this range, the oscillations disappear via a
             supercritical HB, while above it, a homoclinic connection is
             observed.},
   Key = {fds248489}
}

@booklet{Luo98,
   Author = {Luo, KJ and Grahn, HT and Teitsworth, SW and Ploog,
             KH},
   Title = {Influence of higher harmonics on Poincaré maps derived from
             current self-oscillations in a semiconductor
             superlattice},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {58},
   Number = {19},
   Pages = {12613-12616},
   Year = {1998},
   Abstract = {The effect of higher harmonics on the shape of Poincaré
             maps (first return maps) derived from current
             self-oscillations has been investigated in a semiconductor
             superlattice system driven by a dc + ac voltage bias. In
             addition to the intrinsic fundamental frequency, a number of
             higher harmonics with comparable amplitude are observed. The
             current oscillation traces are simulated according to the
             power spectra in order to determine, the effect of the
             higher harmonics on the Poincaré maps. The calculated
             Poincaré maps for quasiperiodic oscillations as well as
             frequency locking are clearly distorted by the presence of
             the higher harmonics. The shape of the distorted Poincaré
             maps agrees with the experimentally observed ones. The
             calculation also reveals that the phase shift between the
             different frequency components of the current has an
             important effect on the shape of the Poincaré maps. © 1998
             The American Physical Society.},
   Key = {Luo98}
}

@booklet{Blue97,
   Author = {Blue, LJ and Daniels-Race, T and Kendall, RE and Schmid, CR and Teitsworth, SW},
   Title = {Dependence of current-voltage characteristics on Al mole
             fraction in GaAs/AlxGa1-xAs asymmetric
             double barrier structures},
   Journal = {Journal of Vacuum Science and Technology B: Microelectronics
             and Nanometer Structures},
   Volume = {15},
   Number = {3},
   Pages = {696-701},
   Year = {1997},
   Abstract = {The effect of barrier Al mole fraction, 0.2≤x≤0.8. on
             tunneling currents has been studied for a set of asymmetric
             GaAs/AlxGa1-xAs double barrier structures. The barrier
             widths of each sample were scaled so that barrier
             transmission coefficients for different samples should be
             approximately equivalent at the first resonant tunneling
             peak. Structures were grown by molecular beam epitaxy; by
             adjusting Ga and Al cell temperatures, the full range of Al
             mole fractions could be achieved in AlxGa1-xAs barrier
             layers while maintaining a nearly constant growth rate of
             about 1 μm/h. Current-voltage measurements are in agreement
             with theoretical estimates and indicate good sample quality.
             © 1997 American Vacuum Society.},
   Key = {Blue97}
}

@booklet{Bergmann96,
   Author = {Bergmann, MJ and Teitsworth, SW and Bonilla, LL and Cantalapiedra,
             IR},
   Title = {Solitary-wave conduction in p-type Ge under time-dependent
             voltage bias.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {53},
   Number = {3},
   Pages = {1327-1335},
   Year = {1996},
   Month = {January},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9983592},
   Key = {Bergmann96}
}

@booklet{Banoo96,
   Author = {Banoo, K},
   Title = {Phonon scattering in novel superlattice-asymmetric double
             barrier resonant tunneling structure},
   Journal = {Journal of Vacuum Science and Technology B: Microelectronics
             and Nanometer Structures},
   Volume = {14},
   Number = {4},
   Pages = {2725-2730},
   Year = {1996},
   Abstract = {The scattering effects (specifically LO-phonon scattering)
             in a 45 Å AlAs/80 Å GaAs/33 A AlAs asymmetric double
             barrier resonant tunneling (ADBRT) structure with a short
             period GaAS/Al0.3Ga0.7As superlattice incorporated on one
             side of the double barrier have been studied and
             characterized. Enhanced levels of current conduction were
             produced in the ADBRT due to the superlattice miniband
             electron transport under forward bias. And the effect of the
             said superlattice on the phonon scattering phenomena
             exhibited by the entire device was subsequently examined.
             Magnetic field fan diagrams at 4.2 K under reverse bias
             showed a new feature at an energy of 22 meV that could be
             explained on the basis of previously unreported GaAs
             LO-phonon scattering processes from the first excited
             emitter level. Finally, quenching of phonon-assisted
             tunneling in reverse bias on decreasing the period of the
             superlattice was also observed. © 1996 American Vacuum
             Society.},
   Key = {Banoo96}
}

@booklet{Delacruz95,
   Author = {de la Cruz RM, and Teitsworth, SW and Stroscio,
             MA},
   Title = {Interface phonons in spherical GaAs/AlxGa1-xAs quantum
             dots.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {52},
   Number = {3},
   Pages = {1489-1492},
   Year = {1995},
   Month = {July},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9981202},
   Key = {Delacruz95}
}

@booklet{Turley95,
   Author = {Turley, PJ and Wallis, CR and Teitsworth, SW},
   Title = {Selection rule for localized phonon emission in GaAs/AlAs
             double-barrier structures},
   Journal = {Journal of Applied Physics},
   Volume = {78},
   Number = {10},
   Pages = {6104-6107},
   Year = {1995},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.360551},
   Abstract = {Phonon-assisted tunneling (PAT) has been studied in detail
             for two similar GaAs/AlAs double-barrier structures.
             Calculations of the PAT current - including effects of
             optical-phonon localization - are in good agreement with
             experimental data, and the emission rate for certain phonon
             types is found to depend sensitively on GaAs well width. We
             find that GaAs-like modes clearly dominate in structures
             with wider wells, while GaAs and AlAs-like modes contribute
             equivalently in narrower well structures. A simple overlap
             integral - involving the phonon potential and electronic
             wave functions - provides an effective selection rule for
             determining which types of phonons are preferentially
             emitted. © 1995 American Institute of Physics.},
   Doi = {10.1063/1.360551},
   Key = {Turley95}
}

@booklet{Turley94,
   Author = {Turley, PJ and Teitsworth, SW},
   Title = {Phonon-assisted tunneling from a two-dimensional emitter
             state.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {50},
   Number = {12},
   Pages = {8423-8432},
   Year = {1994},
   Month = {September},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9974860},
   Key = {Turley94}
}

@booklet{Wallis94,
   Author = {Wallis, CR and Teitsworth, SW},
   Title = {Hopf bifurcations and hysteresis in resonant tunneling diode
             circuits},
   Journal = {Journal of Applied Physics},
   Volume = {76},
   Number = {7},
   Pages = {4443-4445},
   Year = {1994},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.357343},
   Abstract = {Conditions for Hopf bifurcations and associated current
             oscillations are presented for a standard model of a
             resonant tunneling diode circuit. We derive a simple
             analytic formula for the Hopf bifurcation type (subcritical
             or supercritical) and discuss how this affects circuit
             operation, e.g., whether or not hysteresis and bistability
             are observed in current-voltage curves.},
   Doi = {10.1063/1.357343},
   Key = {Wallis94}
}

@booklet{Bonilla94,
   Author = {Bonilla, LL and Bergmann, MJ and Cantalapiedra, IR and Teitsworth,
             SW},
   Title = {Onset of current oscillations in extrinsic semiconductors
             under DC voltage bias},
   Journal = {Semiconductor Science and Technology},
   Volume = {9},
   Number = {5 SUPPL},
   Pages = {599-602},
   Year = {1994},
   ISSN = {0268-1242},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1994NM75300054&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {We present a model which describes the onset of current
             instabilities and space-charge domains in extrinsic
             semiconductors (especially p-Ge) under DC voltage bias. Just
             above the onset voltage for current instability we have
             found numerically small-amplitude fast oscillations due to
             the periodic motion of solitary waves which decay before
             reaching the receiving contact. For slightly larger applied
             voltages there is an abrupt and slightly hysteretic
             transition to slower large-amplitude solitary waves similar
             to those in the Gunn effect. An amplitude oscillatory modes
             that become linearly unstable at onset.},
   Doi = {10.1088/0268-1242/9/5S/054},
   Key = {Bonilla94}
}

@booklet{Teitsworth94,
   Author = {Bhattacharya, PK and Li, W and Wallis, CR and Turley, PJ and Teitsworth,
             SW},
   Title = {Magnetotunnelling measurements of localized optical phonons
             in GaAs/AlAs double-barrier structures},
   Journal = {Semiconductor Science and Technology},
   Volume = {9},
   Number = {5 SUPPL},
   Pages = {508-511},
   Year = {1994},
   ISSN = {0268-1242},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1994NM75300029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {We have measured current-voltage characteristics at
             liquid-helium temperature and for magnetic fields up to 7 T
             (parallel to the current flow) for three similar asymmetric
             GaAs/AlAs double-barrier structures, all of which possess
             large phonon-assisted tunnelling currents. Confined
             longitudinal optical (LO) phonons on the GaAs well layer and
             LO-like symmetric interface phonons treated within a
             dielectric continuum picture suffice to account for the
             measured currents. Phonon-assisted tunnelling current levels
             as well as magnetotunnelling data are found depend
             sensitively on well and barrier widths.},
   Doi = {10.1088/0268-1242/9/5S/029},
   Key = {Teitsworth94}
}

@booklet{Cantalapiedra93,
   Author = {Cantalapiedra, IR and Bonilla, LL and Bergmann, MJ and Teitsworth,
             SW},
   Title = {Solitary-wave dynamics in extrinsic semiconductors under dc
             voltage bias.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {48},
   Number = {16},
   Pages = {12278-12281},
   Year = {1993},
   Month = {October},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/10007580},
   Key = {Cantalapiedra93}
}

@booklet{Turley93,
   Author = {Turley, PJ and Wallis, CR and Teitsworth, SW and Li, W and Bhattacharya,
             PK},
   Title = {Tunneling measurements of symmetric-interface phonons in
             GaAs/AlAs double-barrier structures.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {47},
   Number = {19},
   Pages = {12640-12648},
   Year = {1993},
   Month = {May},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/10005459},
   Key = {Turley93}
}

@booklet{Delacruz93,
   Author = {Cruz, RMD and Teitsworth, SW and Stroscio, MA},
   Title = {Bottleneck effects due to confined phonons in quantum
             dots},
   Journal = {Superlattices and Microstructures},
   Volume = {13},
   Number = {4},
   Pages = {481-},
   Year = {1993},
   ISSN = {0749-6036},
   url = {http://dx.doi.org/10.1006/spmi.1993.1090},
   Abstract = {A generalization of the three-dimensional Fröhlich
             hamiltonian for a polar semiconductor is presented which
             describes the interaction between charge carriers of a
             zero-dimensional electron gas and longitudinal optical (LO)
             phonon modes confined in three spatial dimensions. This
             hamiltonian is used to calculate the scattering rate of
             electrons by LO phonons in a GaAs quantum box which is
             free-standing in vacuum. The suppression of scattering
             through a phonon bottleneck effect is discussed in terms of
             the selection rules. © 1993 Academic Press. All rights
             reserved.},
   Doi = {10.1006/spmi.1993.1090},
   Key = {Delacruz93}
}

@booklet{Turley92,
   Author = {Turley, PJ and Teitsworth, SW},
   Title = {Theory of localized phonon modes and their effects on
             electron tunneling in double-barrier structures},
   Journal = {Journal of Applied Physics},
   Volume = {72},
   Number = {6},
   Pages = {2356-2366},
   Year = {1992},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.351577},
   Abstract = {The role of localized phonon modes in phonon-assisted
             tunneling in GaAs/AlAs double-barrier resonant tunneling
             structures is considered for a range of temperatures and
             magnetic fields. Phonon modes are calculated using a
             dielectric continuum model and electron-phonon Hamiltonians
             are presented for the most important modes. Formulas for
             phonon-assisted tunneling currents are derived that express
             the inherently three-dimensional process in a simple
             one-dimensional form. It is found that the excess current
             due to phonon-assisted tunneling in typical structures is
             caused primarily by two types of localized modes: confined
             modes in the well and symmetric interface modes, with
             interface modes dominating in structures with narrow wells.
             Current peaks broaden with increasing temperature, and for
             temperatures ≳20 K the resolution of features due to
             distinct phonon types is very difficult. The application of
             a magnetic field parallel to the current flow leads to a
             complex spectrum of sharp current peaks corresponding to
             various inter-Landau-level transitions which occur during
             phonon-assisted tunneling.},
   Doi = {10.1063/1.351577},
   Key = {Turley92}
}

@booklet{Kim92,
   Author = {Kim, KW and Bhatt, AR and Stroscio, MA and Turley, PJ and Teitsworth,
             SW},
   Title = {Effects of interface phonon scattering in
             multiheterointerface structures},
   Journal = {Journal of Applied Physics},
   Volume = {72},
   Number = {6},
   Pages = {2282-2287},
   Year = {1992},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.351569},
   Abstract = {In this paper, the commonly used but idealistic formulation
             of quantized optical-phonon modes for a heterostructure
             system with only two heterojunctions (i.e., single
             quantum-well structures) is extended to the more realistic
             case of multiheterointerface structures. By applying the
             macroscopic dielectric continuum approach, dispersion
             relations and interaction Hamiltonians for interface-phonon
             modes are derived for a double-barrier structure and
             scattering rates based on these results are used to
             determine the range of practical validity of the idealistic
             model using interaction Hamiltonians appropriate for single
             quantum wells with infinite barrier widths. It is found that
             when the dimensions of the structures are larger than
             approximately 30 Å, this simplified description can be
             applied to multiheterointerface structures in general with
             reasonable accuracy.},
   Doi = {10.1063/1.351569},
   Key = {Kim92}
}

@booklet{Turley91,
   Author = {Turley, PJ and Teitsworth, SW},
   Title = {Effects of localized phonon modes on magnetotunneling
             spectra in double-barrier structures.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {44},
   Number = {23},
   Pages = {12959-12963},
   Year = {1991},
   Month = {December},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9999478},
   Key = {Turley91}
}

@booklet{Turley91a,
   Author = {Turley, PJ and Teitsworth, SW},
   Title = {Phonon-assisted tunneling due to localized modes in
             double-barrier structures.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {44},
   Number = {15},
   Pages = {8181-8184},
   Year = {1991},
   Month = {October},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9998750},
   Key = {Turley91a}
}

@booklet{Turley91b,
   Author = {Turley, PJ and Teitsworth, SW},
   Title = {Electronic wave functions and electron-confined-phonon
             matrix elements in GaAs/AlxGa1-xAs double-barrier
             resonant-tunneling structures.},
   Journal = {Physical Review B - Condensed Matter and Materials
             Physics},
   Volume = {44},
   Number = {7},
   Pages = {3199-3210},
   Year = {1991},
   Month = {August},
   ISSN = {0163-1829},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/9999916},
   Key = {Turley91b}
}

@booklet{Bonilla91,
   Author = {Bonilla, LL and Teitsworth, SW},
   Title = {Theory of periodic and solitary space charge waves in
             extrinsic semiconductors},
   Journal = {Physica D: Nonlinear Phenomena},
   Volume = {50},
   Number = {3},
   Pages = {545-559},
   Year = {1991},
   ISSN = {0167-2789},
   Abstract = {We present a theory of the existence and stability of
             traveling periodic and solitary space charge wave solutions
             to a standard rate equation model of electrical conduction
             in extrinsic semiconductors which includes effects of
             field-dependent impurity impact ionization. A nondimensional
             set of equations is presented in which the small parameter
             β = (dielectric relaxation time) / (characteristic impurity
             time) ≫ 1 plays a crucial role for our singular
             perturbation analysis. For a narrow range of wave velocities
             a phase plane analysis gives a set of limit cycle orbits
             corresponding to periodic traveling waves. while for a
             unique value of wave velocity we find a homoclinic orbit
             corresponding to a moving solitary space charge wave of the
             type experimentally observed in p-type germanium. A linear
             stability analysis reveals all waves to be unstable under
             current bias on the infinite one-dimensional line. Finally,
             we conjecture that solitary waves may be stable in samples
             of finite length under voltage bias. © 1991.},
   Key = {Bonilla91}
}

@booklet{Teitsworth89,
   Author = {Teitsworth, SW},
   Title = {Physics of space charge instabilities and temporal chaos in
             extrinsic photoconductors},
   Journal = {Applied Physics A: Solids and Surfaces},
   Volume = {48},
   Number = {2},
   Pages = {127-136},
   Year = {1989},
   Abstract = {This paper reviews experimental and theoretical work carried
             out on space charge instabilities and temporal chaotic
             behavior in cooled extrinsic p-type Germanium
             photoconductors. Measured dc current-voltage (I-V)
             characteristics of these devices are strongly nonlinear for
             moderate electric field ≥0.1 V/cm due to field dependence
             of the rates of free hole capture and impurity impact
             ionization. Below the threshold field for impurity
             breakdown, Ge samples behave like damped nonlinear
             oscillators, exhibiting characteristic chaotic response when
             driven by a time-periodic voltage. Above impurity breakdown,
             we observe voltage-controlled negative differential
             resistance (NDR) in the I-V curves accompanied by
             spontaneous current oscillations due to moving space charge
             domains with velocities 103 to 104 cm/s. Measurements are
             well explained by a simple rate equation model in which
             negative differential behavior in the impact ionization rate
             plays a crucial role. Related work on semiconductor chaos
             and possible future directions for research are also
             mentioned.},
   Key = {Teitsworth89}
}

@booklet{Teitsworth86b,
   Author = {Teitsworth, SW and Westervelt, RM},
   Title = {Subharmonic and chaotic response of periodically driven
             extrinsic Ge photoconductors.},
   Journal = {Physical Review Letters},
   Volume = {56},
   Number = {5},
   Pages = {516-519},
   Year = {1986},
   Month = {February},
   url = {http://www.ncbi.nlm.nih.gov/pubmed/10033212},
   Doi = {10.1103/PhysRevLett.56.516},
   Key = {Teitsworth86b}
}

@booklet{Teitsworth86,
   Author = {TEITSWORTH, SW and LYNN, BA and WESTERVELT, RM},
   Title = {CHAOTIC DYNAMICS IN A SIMPLE-MODEL OF EXTRINSIC
             PHOTOCONDUCTORS},
   Journal = {Physica Scripta T},
   Volume = {T14},
   Pages = {71-75},
   Year = {1986},
   ISSN = {0281-1847},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1986H841100014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Doi = {10.1088/0031-8949/1986/T14/012},
   Key = {Teitsworth86}
}

@booklet{Teitsworth86a,
   Author = {Teitsworth, SW and Westervelt, RM},
   Title = {Nonlinear current-voltage characteristics and spontaneous
             current oscillations in p-Ge},
   Journal = {Physica D: Nonlinear Phenomena},
   Volume = {23},
   Number = {1-3},
   Pages = {181-186},
   Year = {1986},
   ISSN = {0167-2789},
   Abstract = {We report an experimental measurement of nonlinear dc
             current-voltage (I-V) characteristics in p-type Ge extrinsic
             photoconductors at liquid He temperatures which exhibit a
             region of voltage-controlled negative differential
             resistance (NDR) above the threshold for impurity breakdown,
             accompanied by a spontaneous current oscillation of
             frequency fs ∼ 5 to 10 kHz. The dc I-V characteristics are
             well explained in terms of a simple rate equation model and,
             it is argued, the spontaneous current oscillations are due
             to moving space charge waves which arise from a negative
             differential rate of impurity impact ionization. ©
             1986.},
   Key = {Teitsworth86a}
}

@booklet{Westervelt86,
   Author = {WESTERVELT, RM and TEITSWORTH, SW and GWINN, EG},
   Title = {CHAOTIC DYNAMICS IN GE PHOTOCONDUCTORS},
   Journal = {Physica Scripta T},
   Volume = {T14},
   Number = {C},
   Pages = {65-70},
   Year = {1986},
   ISSN = {0281-1847},
   url = {http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1986H841100013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=47d3190e77e5a3a53558812f597b0b92},
   Abstract = {Experimental tests are presented of universal predictions of
             the circle map for the response of driven nonlinear
             oscillators, using a spatio-temporal instability associated
             with impurity impact ionization in liquid He cooled p-type
             Ge. Both the measured power spectrum and the spectrum of
             dimensions f (α) for drive at the critical amplitude for
             winding number equal to the golden mean are found to be in
             quantitative agreement with theory. © 1987.},
   Doi = {10.1088/0031-8949/1986/T14/011},
   Key = {Westervelt86}
}

@booklet{Westervelt86a,
   Author = {Westervelt, RM and Teitsworth, SW},
   Title = {Nonlinear dynamics and chaos in extrinsic
             photoconductors},
   Journal = {Physica D: Nonlinear Phenomena},
   Volume = {23},
   Number = {1-3},
   Pages = {187-194},
   Year = {1986},
   ISSN = {0167-2789},
   Abstract = {We present an experimental and theoretical analysis of the
             nonlinear response of cooled extrinsic Ge photoconductors of
             the type used to detect far-infrared radiation. State of the
             art p-type Ge devices with nearly ideal noise performance in
             the absence of drive show characteristic subharmonic and
             chaotic nonlinear phenomena when periodically driven, with a
             corresponding degredation in noise performance by a factor
             ≈ 104. A systematic series of experiments and
             corresponding simulations of a standard model of extrinsic
             photoconductors, including measurings and simulations of the
             I-V curves, transient and small signal response, as well as
             the response to periodic drive, identify the physical
             transport processes responsible: the nonlinear electric
             field dependence of the rates of free hole capture and
             impact ionization due to carrier heating at relatively
             modest applied electric fields E > 0.1 V/cm. ©
             1986.},
   Key = {Westervelt86a}
}

@booklet{Westervelt85,
   Author = {Westervelt, RM and Teitsworth, SW},
   Title = {Nonlinear transient response of extrinsic Ge far-infrared
             photoconductors},
   Journal = {Journal of Applied Physics},
   Volume = {57},
   Number = {12},
   Pages = {5457-5469},
   Year = {1985},
   ISSN = {0021-8979},
   url = {http://dx.doi.org/10.1063/1.334822},
   Abstract = {Physical mechanisms responsible for nonlinear phenomena and
             anomalous transient response of cooled extrinsic
             far-infrared photoconductors are discussed. A simple model
             describing carrier generation, trapping, and impact
             ionization is presented, which describes the transient
             response on fast time scales 10-3 to 10-4 sec, neglecting
             changes in space charge. Carrier heating by a dc electric
             field produces relatively fast, damped oscillatory response
             to external excitation. A small-signal analysis of these
             equations is a test of stability. An analysis of the role of
             ideal electrical contacts and space charge is also
             presented. The very slow (∼1 sec) overshoot and transient
             response commonly observed in cooled extrinsic
             photoconductors is explained by the dynamics of trapped
             space charge near the injecting electrical contact. A
             small-signal analysis determines the characteristic time
             constants for these processes, which are typically ∼1 sec.
             Calculated examples of the recombination and ionization
             coefficients, dc I-V curves, differential equation flow
             diagrams, and transient response are presented for
             parameters typical of p-type Ge photoconductors doped with
             shallow acceptor levels, and suggestions for the design of
             more stable photoconductors are presented.},
   Doi = {10.1063/1.334822},
   Key = {Westervelt85}
}

@booklet{Teitsworth84,
   Author = {Teitsworth, SW and Westervelt, RM},
   Title = {Chaos and broadband noise in extrinsic photoconductors},
   Journal = {Physical Review Letters},
   Volume = {53},
   Number = {27},
   Pages = {2587-2590},
   Year = {1984},
   ISSN = {0031-9007},
   url = {http://dx.doi.org/10.1103/PhysRevLett.53.2587},
   Abstract = {A simple model is studied describing low-temperature
             free-carrier dynamics in extrinsic photoconductors due to
             capture by impurity atoms and impact ionization. Numerical
             results are presented which exhibit period doubling, chaotic
             behavior, and elevated effective noise temperatures.
             Photoconductor properties necessary for chaotic behavior are
             discussed. © 1984 The American Physical
             Society.},
   Doi = {10.1103/PhysRevLett.53.2587},
   Key = {Teitsworth84}
}

@booklet{Teitsworth83,
   Author = {Teitsworth, SW and Westervelt, RM and Haller, EE},
   Title = {Nonlinear oscillations and chaos in electrical breakdown in
             Ge},
   Journal = {Physical Review Letters},
   Volume = {51},
   Number = {9},
   Pages = {825-828},
   Year = {1983},
   ISSN = {0031-9007},
   url = {http://dx.doi.org/10.1103/PhysRevLett.51.825},
   Abstract = {Self-generated nonlinear oscillations and chaos are found in
             the conductance of liquid-He-cooled far-infrared
             photoconductors made from ultrapure Ge. Complex behavior
             includes a period-doubling cascade to chaotic oscillation
             with increasing applied electric field, quasiperiodic
             oscillation, frequency locking, and intermittent switching
             between modes of oscillation. A rate-equation model is
             presented which includes impurity impact ionization and
             space-charge injection. © 1983 The American Physical
             Society.},
   Doi = {10.1103/PhysRevLett.51.825},
   Key = {Teitsworth83}
}


%% Preprints   
@article{fds199873,
   Author = {M. Heymann and S. W. Teitsworth and J. Mattingly},
   Title = {Rare transition events in non-equilibrium systems with
             state-dependent noise: application to stochastic current
             switching in semiconductor superlattices},
   Year = {2012},
   Abstract = {Using recent mathematical advances, a geometric approach to
             rare noise-driven transition events in nonequilibrium
             systems is given, and an algorithm for computing the maximum
             likelihood transition curve is generalized to the case of
             state-dependent noise. It is applied to a model of
             electronic transport in semiconductor superlattices to
             investigate transitions between metastable electric field
             distributions. When the applied voltage V is varied near a
             saddle-node bifurcation at Vth , the mean life time T of the
             initial metastable state is shown to scale like log T
             \propto |Vth − V |^{3/2}.},
   Key = {fds199873}
}