Papers Published

1. Brown, April S. and Mishra, Umesh K. and Chou, C.S. and Hooper, C.E. and Melendes, M.A. and Thompson, M. and Larson, L.E. and Rosenbaum, S.E. and Delaney, M.J., AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE, IEEE Electron Device Letters, vol. 10 no. 12 (1989), pp. 565 - 567 [55.43141] .
   (last updated on 2007/04/14)

   Abstract:
   Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150°C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.

   Keywords:
   Semiconducting Aluminum Compounds;Crystals--Epitaxial Growth;Millimeter Waves;