Papers Published

1. Mukundan, S.K. and Pagey, M.P. and Schrimpf, R.D. and Galloway, K.F., Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations, 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) (1999), pp. 92 - 7 [IRWS.1999.830565] .
   (last updated on 2007/04/15)

   Abstract:
   The Si-SiO₂ interface has been modelled as an abrupt heterojunction to simulate hot-carrier injection and transport in oxides of n- and p-channel MOSFETs. Energy balance equations in silicon and continuity equations in the oxide and silicon regions are solved consistently with trapping-rate equations in the oxide to simulate hot-carrier induced carrier trapping and interface trap generation

   Keywords:
   electron traps;elemental semiconductors;hole traps;hot carriers;interface states;MOSFET;semiconductor device models;semiconductor-insulator boundaries;silicon;silicon compounds;