Papers Published

1. Stewart, K. and Buda, M. and Wong-Leung, J. and Fu, L. and Jagadish, C. and Stiff-Roberts, A. and Bhattacharya, P., Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector, Journal of Applied Physics, vol. 94 no. 8 (2003), pp. 5283 - 5289 [1.1609634] .
   (last updated on 2007/04/16)

   Abstract:
   Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

   Keywords:
   Semiconductor quantum dots;Semiconducting indium compounds;Semiconducting gallium arsenide;Rapid thermal annealing;Interdiffusion (solids);Electric currents;Semiconductor growth;Photoluminescence;Semiconducting silicon;Semiconductor doping;