Papers Published

1. Su, X.H. and Chakrabarti, S. and Stiff-Roberts, A.D. and Singh, J. and Bhattacharya, P., Quantum dot infrared photodetector design based on double-barrier resonant tunnelling, Electronics Letters, vol. 40 no. 17 (2004), pp. 1082 - 1083 [el:20045206] .
   (last updated on 2007/04/16)

   Abstract:
   A novel quantum dot infrared photodeteotor design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.

   Keywords:
   Semiconductor quantum dots;Leakage currents;Resonant tunneling;Probability;Thermionic emission;Electrons;Velocity measurement;Carrier concentration;Electric fields;Heterojunctions;Transport properties;Photolithography;