Papers Published

1. Stiff, A.D. and Krishna, S. and Bhattacharya, P. and Kennerly, S., High-detectivity, normal-incidence, mid-infrared (λ [similar to] 4μm)inAs/GaAs quantum-dot detector operating at 150 k, Applied Physics Letters, vol. 79 no. 3 (2001), pp. 421 - 423 [1.1385584] .
   (last updated on 2007/04/16)

   Abstract:
   A mid-infrared normal-incidence InAs/GaAs quantum-dot detector containing Al_0.3Ga_0.7As with peak responsivity and a very high peak detectivity was studied. The detectors were grown, fabricated and characterized in the temperature range of 78 to 150 K. The device had very low dark current with a photoconductive gain and improved the high-temperature performance of normal-incidence vertical quantum-dot infrared photodetectors.

   Keywords:
   Semiconducting gallium arsenide;Semiconducting indium compounds;Infrared detectors;Heterojunctions;Epitaxial growth;Photocurrents;Ground state;Thermography (imaging);Photoluminescence;Photoconductivity;Fourier transform infrared spectroscopy;