Publications by April S. Brown.

Papers Published

  1. P. C. Wu and M. Losurdo and T. H. Kim and M. Giangregorio and G. Bruno and H. O. Everitt and A. S. Brown, Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge, Langmuir, vol. 25 no. 2 (January, 2009), pp. 924 -- 930  [abs].
  2. M. A. Garcia and M. Losurdo and S. D. Wolter and W. V. Lampert and J. Bonaventura and G. Bruno and C. Yi and A. S. Brown, Comparison of Functionalized III-V Semiconductor Response for Nitric Oxide, Sensor Letters, vol. 6 no. 4 (August, 2008), pp. 627 -- 634  [abs].
  3. M. Losurdo and M. M. Giangregorio and G. Bruno and T. H. Kim and S. Choi and A. S. Brown and G. Pettinari and M. Capizzi and A. Polimeni, Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry, Applied Physics Letters, vol. 91 no. 8 (August, 2007)  [abs].
  4. K. S. Mckay and F. P. Lu and J. Kim and C. H. Yi and A. S. Brown and A. R. Hawkins, Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction, Applied Physics Letters, vol. 90 no. 22 (May, 2007)  [abs].
  5. J. Uhlrich and M. Garcia and S. Wolter and A. S. Brown and T. F. Kuech, Interfacial chemistry and energy band line-up of pentacene with the GaN (0001) surface, Journal Of Crystal Growth, vol. 300 no. 1 (March, 2007), pp. 204 -- 211  [abs].
  6. P. C. Wu and T. H. Kim and A. S. Brown and M. Losurdo and G. Bruno and H. O. Everitt, Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry, Applied Physics Letters, vol. 90 no. 10 (March, 2007)  [abs].
  7. Uhlrich, J. and Garcia, M. and Wolter, S. and Brown, A.S. and Kuech, T.F., Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface, Journal of Crystal Growth, vol. 300 no. 1 (2007), pp. 204 - 211 [035]  [abs].
  8. Wu, Pae C and Kim, Tong-Ho and Brown, April S. and Losurdo, Maria and Bruno, Giovanni and Everitt, Henry O., Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry, Applied Physics Letters, vol. 90 no. 10 (2007), pp. 103119 - [1.2712508]  [abs].
  9. I. Yoon and C. Yi and T. Kirn and A. S. Brown and A. Seabaugh, Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates, Journal Of Vacuum Science & Technology B, vol. 25 no. 3 (2007), pp. 945 -- 947  [abs].
  10. P. C. Wu and M. Losurdo and T. H. Kim and O. Choi and G. Bruno and A. S. Brown, In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy, Journal Of Vacuum Science & Technology B, vol. 25 no. 3 (2007), pp. 1019 -- 1023  [abs].
  11. G. Bruno and M. Losurdo and M. M. Giangregorio and P. Capezzuto and A. S. Brown and T. H. Kim and S. Choi, Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN, Applied Surface Science, vol. 253 no. 1 (October, 2006), pp. 219 -- 223  [abs].
  12. M. Morse and P. Wu and S. Choi and T. H. Kim and A. S. Brown and M. Losurdo and G. Bruno, Structural and optical characterization of GaN heteroepitaxial films on SiC substrates, Applied Surface Science, vol. 253 no. 1 (October, 2006), pp. 232 -- 235  [abs].
  13. C. H. Yi and T. H. Kim and A. S. Brown, InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters, Journal Of Electronic Materials, vol. 35 no. 9 (September, 2006), pp. 1712 -- 1714  [abs].
  14. G. E. Triplett and A. S. Brown and G. S. May, Strain monitoring in InAs-AlxGa1-xAsySb1-y structures grown by molecular beam epitaxy, Applied Physics Letters, vol. 89 no. 3 (July, 2006), pp. 345 -- 349  [abs].
  15. M. Losurdo and P. Capezzuto and G. Bruno and A. S. Brown and T. Brown and G. May, Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions, Journal Of Applied Physics, vol. 100 no. 1 (July, 2006)  [abs].
  16. T. H. Kim and S. Choi and A. S. Brown and M. Losurdo and G. Bruno, Impact of 4H- and 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy, Applied Physics Letters, vol. 89 no. 2 (July, 2006)  [abs].
  17. A. S. Brown and M. Losurdo and P. Capezzuto and G. Bruno and T. Brown and G. May, Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction, Journal Of Applied Physics, vol. 99 no. 9 (May, 2006)  [abs].
  18. G. E. Triplett and A. S. Brown and G. S. May, Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures, Journal Of Crystal Growth, vol. 286 no. 2 (January, 2006), pp. 345 -- 349  [abs].
  19. Brown, April S. and Kim, Tong-Ho and Choi, Soojeong and Wu, Pae and Morse, Michael and Losurdo, Maria and Giangregorio, Maria M. and Bruno, Giovanni and Moto, Akihiro, Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy, Physica Status Solidi C: Current Topics in Solid State Physics, vol. 3 (2006), pp. 1531 - 1535 [pssc.200565150]  [abs].
  20. Brown, April S. and Losurdo, Maria and Capezzuto, Pio and Bruno, Giovanni and Brown, Terence and May, Gary, Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction, Journal of Applied Physics, vol. 99 no. 9 (2006), pp. 093510 - [1.2194126]  [abs].
  21. Triplett, Gregory Edward and Brown, April S. and May, Gary S., Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures, Journal of Crystal Growth, vol. 286 no. 2 (2006), pp. 345 - 349 [098]  [abs].
  22. Kim, Tong-Ho and Choi, Soojeong and Brown, April S. and Losurdo, Maria and Bruno, Giovanni, Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy, Applied Physics Letters, vol. 89 no. 2 (2006), pp. 021916 - [1.2220007]  [abs].
  23. Bruno, Giovanni and Losurdo, Maria and Giangregorio, Maria M. and Capezzuto, Pio and Brown, April S. and Kim, Tong-Ho and Choi, Soojeong, Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN, Applied Surface Science, vol. 253 no. 1 SPEC ISS (2006), pp. 219 - 223 [129]  [abs].
  24. Morse, M. and Wu, P. and Choi, S. and Kim, T.H. and Brown, A.S. and Losurdo, M. and Bruno, G., Structural and optical characterization of GaN heteroepitaxial films on SiC substrates, Applied Surface Science, vol. 253 no. 1 SPEC ISS (2006), pp. 232 - 235 [097]  [abs].
  25. Triplett, Gregory E. and Brown, April S. and May, Gary S., Strain monitoring in InAs-AlxGa1-xAS ySb1-y structures grown by molecular beam epitaxy, Applied Physics Letters, vol. 89 no. 3 (2006), pp. 032106 - [1.2226998]  [abs].
  26. Yi, Changhyun and Kim, Tong-Ho and Brown, April S., InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters, Journal of Electronic Materials, vol. 35 no. 9 (2006), pp. 1712 - 1714  [abs].
  27. Losurdo, Maria and Giangregorio, Maria M. and Capezzuto, Pio and Bruno, Giovanni and Brown, April S. and Kim, Tong-Ho and Yi, Changhyun, Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen, Journal of Electronic Materials, vol. 34 no. 4 (2005), pp. 457 - 465  [abs].
  28. Brown, A.S. and Losurdo, M. and Kim, T.H. and Giangregorio, M.M. and Choi, S. and Morse, M. and Wu, P. and Capezzuto, P. and Bruno, G., The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE, Crystal Research and Technology, vol. 40 no. 10-11 (2005), pp. 997 - 1002 [crat.200410475]  [abs].
  29. Collins, Leslie M. and Huettel, Lisa G. and Brown, April S. and Ybarra, Gary A. and Holmes, Joseph S. and Board, John A. and Cummer, Steven A. and Gustafson, Michael R. and Kim, Jungsang and Massoud, Hisham Z., Theme-based redesign of the duke university ECE curriculum: The first steps, ASEE Annual Conference and Exposition, Conference Proceedings (2005), pp. 14313 - 14326  [abs].
  30. Seo, Sang-Woo and Cho, Sang-Yeon and Huang, Sa and Jokerst, Nan Marie and Brown, April S., Pulse response tuning of high speed InGaAs thin film MSM photodetector using external RCL loads, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5726 (2005), pp. 52 - 60 [12.592246]  [abs].
  31. Brown, A.S., Flat, cheap, and under control [electrochemical mechanical planarization], IEEE Spectr. (USA), vol. 42 no. 1 (2005), pp. 40 - 5 [MSPEC.2005.1377874]  [abs].
  32. Huang, Zhaoran and Cha, Cheolung and Chen, Shuodan and Sarmiento, Tomas and Shen, J.J. and Jokerst, Nan M. and Brooke, Martin A. and May, Gary and Brown, April S., InGaAs MSM Photodetectors Modeling Using DOE Analysis, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5178 (2004), pp. 148 - 155 [12.507337]  [abs].
  33. Seo, Sang-Woo and Cho, Sang-Yeon and Huang, Sa and Brown, April S. and Jokerst, Nan Marie, High speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system, Proceedings of SPIE - The International Society for Optical Engineering, vol. 5353 (2004), pp. 48 - 56 [12.531681]  [abs].
  34. Losurdo, M. and Giangregorio, M.M. and Bruno, G. and Brown, A.S. and Doolittle, W.A. and Ptak, A.J. and Myers, T.H., Surface potential measurements of doping and defects in p-GaN, GaN and Related Alloys - 2003 Symposium (Mater. Res. Soc. Symposium Proceedings Vol.798) (2004), pp. 805 - 10  [abs].
  35. Seo, Sang-Woo and Jokerst, Nan Marie and Cho, Sang-Yeon and Brown, April S. and Huang, Sa and Shin, Jeng Jung and Brooke, Martin A., High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors, IEEE Journal on Selected Topics in Quantum Electronics, vol. 10 no. 4 (2004), pp. 686 - 693 [JSTQE.2004.831677]  [abs].
  36. Triplett, Gregory E. and Brown, April S. and May, Gary S., Charge modification in InAs/AlxGa1-xSb HEMT structures, Journal of Crystal Growth, vol. 265 no. 1-2 (2004), pp. 47 - 52 [036]  [abs].
  37. Losurdo, Maria and Giangregorio, Maria M. and Capezzuto, Pio and Bruno, Giovanni and Namkoong, Gon and Doolittle, W. Alan and Brown, April S., Interplay between GaN polarity and surface reactivity towards atomic hydrogen, Journal of Applied Physics, vol. 95 no. 12 (2004), pp. 8408 - 8418 [1.1745124]  [abs].
  38. Seo, Sang-Woo and Cha, Cheolung and Cho, Sang-Yeon and Huang, Sa and Jokerst, Nan M. and Brooke, Martin A. and Brown, April S., Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 1 (2004), pp. 222 - 223  [abs].
  39. Gon Namkoong and Doolittle, W.A. and Brown, A.S. and Losurdo, M. and Giangregorio, M.M. and Bruno, G., Effect of buffer design on AlGaN/AlN/GaN heterostructures by MBE, GaN and Related Alloys - 2003 Symposium (Mater. Res. Soc. Symposium Proceedings Vol.798) (2004), pp. 359 - 64  [abs].
  40. Losurdo, Maria and Giuva, Danilo and Bruno, Giovanni and Huang, Sa and Kim, Tong-Ho and Brown, April S., The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy, Journal of Crystal Growth, vol. 264 no. 1-3 (2004), pp. 139 - 149 [018]  [abs].
  41. Losurdo, M. and Giangregorio, M.M. and Capezzuto, P. and Bruno, G. and Namkoong, G. and Doolittle, W.A. and Brown, A.S., Interaction of GaN epitaxial layers with atomic hydrogen, Applied Surface Science, vol. 235 no. 3 (2004), pp. 267 - 273 [152]  [abs].
  42. Brown, April S. and Losurdo, Maria and Bruno, Giovanni and Brown, Terence and May, Gary, Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22 no. 4 (2004), pp. 2244 - 2249 [1.1775201]  [abs].
  43. Losurdo, M. and Giuva, D. and Giangregorio, M.M. and Bruno, G. and Brown, A.S., Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices, Thin Solid Films, vol. 455-456 (2004), pp. 457 - 461 [286]  [abs].
  44. Losurdo, M. and Giangregorio, M.M. and Bruno, G. and Brown, A.S. and Doolittle, W.A. and Namkoong, Gon and Ptak, A.J. and Myers, T.H., Surface potential measurements of doping and defects in p-GaN, Materials Research Society Symposium - Proceedings, vol. 798 (2003), pp. 805 - 810  [abs].
  45. Seo, S.W. and Shen, J.J. and Jokerst, N.M. and Brown, A.S., Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics, OSA Trends in Optics and Photonics Series, vol. 88 (2003), pp. 460 - 463  [abs].
  46. Namkoong, Gon and Doolittle, W. Alan and Brown, April S. and Losurdo, Maria and Giangregorio, Maria M. and Bruno, Giovanni, The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films, Journal of Crystal Growth, vol. 252 no. 1-3 (2003), pp. 159 - 166 [S0022-0248(03)00953-9]  [abs].
  47. Kuech, T.F. and Ning Liu and Tong-Ho Kim and Changhyun Yi and Brown, A.S., Alternative substrates for InP and related materials, 2003 International Conference Indium Phosphide and Related Materials. Conference Proceedings (Cat. No.03CH37413) (2003), pp. 562 - [ICIPRM.2003.1205442]  [abs].
  48. Doolittle, W. Alan and Namkoong, Gon and Carver, Alexander G. and Brown, April S., Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology, Solid-State Electronics, vol. 47 no. 12 (2003), pp. 2143 - 2147 [S0038-1101(03)00187-4]  [abs].
  49. Losurdo, Maria and Giuva, Danilo and Capezzuto, Pio and Bruno, Giovanni and Brown, Terence and Triplett, Greg and May, Gary and Brown, April S., A study of anion exchange reactions at GaAs surfaces for heterojunction interface control, Materials Research Society Symposium - Proceedings, vol. 799 (2003), pp. 97 - 102  [abs].
  50. Namkoong, Gon and Doolittle, W. Alan and Brown, A.S. and Losurdo, M. and Giangregorio, M.M. and Bruno, G., Effect of buffer design on AlGaN/AlN/GaN heterostrucutres by MBE, Materials Research Society Symposium - Proceedings, vol. 798 (2003), pp. 359 - 364  [abs].
  51. Brown, A.S., Superconducting circuit makers pin hopes on wireless filters, IEEE Spectr. (USA), vol. 40 no. 4 (2003), pp. 3 pp. -  [abs].
  52. Yi, Changhyun and Kim, Tong-Ho and Brown, April S., InP-based AlInAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications, Journal of Electronic Materials, vol. 31 no. 2 (2002), pp. 95 - 98  [abs].
  53. Losurdo, M. and Giangregorio, M.M. and Capezzuto, P. and Bruno, G. and Namkoong, G. and Doolittle, W.A. and Brown, A.S., A chemical perspective of GaN polarity: the use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity, Materials and Devices for Optoelectronics and Microphotonics. Symposia (Materials Research Society Symposium Proceedings Vol.722) (2002), pp. 103 - 8  [abs].
  54. Losurdo, M. and Capezzuto, P. and Bruno, G. and Namkoong, G. and Doolittle, W.A. and Brown, A.S., Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD, Physica Status Solidi (A) Applied Research, vol. 190 no. 1 (2002), pp. 43 - 51 [1521-396X(200203)190:1<43::AID-PSSA43>3.0.CO;2-G]  [abs].
  55. Doolittle, W. Alan and Namkoong, Gon and Carver, Alexander and Henderson, Walter and Jundt, Dieter and Brown, April S., III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy, Materials Research Society Symposium - Proceedings, vol. 743 (2002), pp. 9 - 14  [abs].
  56. Namkoong, Gon and Brown, April S. and Losurdo, Maria and Capezzuto, Pio and Bruno, Giovanni and Alan Doolittle, W., Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics, Journal of Applied Physics, vol. 91 no. 4 (2002), pp. 2499 - [1.1435834] .
  57. Wang, Zhong L. and Brown, April S. and Wang, Y.Q. and Shen, J.J., Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange, Solid State Communications, vol. 122 no. 10 (2002), pp. 553 - 556 [S0038-1098(02)00212-0]  [abs].
  58. Triplett, G.E. and May, G.S. and Brown, A.S., Using neural networks for RHEED modeling of interfaces in AlGaSb-InAs HEMT devices, 2002 GaAs MANTECH Conference. Digest of Papers (2002), pp. 157 - 60  [abs].
  59. Yi, Changhyun and Metzger, Robert A. and Brown, April S., The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors, Journal of Electronic Materials, vol. 31 no. 8 (2002), pp. 841 - 847  [abs].
  60. Namkoong, Gon and Doolittle, W. Alan and Brown, April S. and Losurdo, Maria and Capezzuto, Pio and Bruno, Giovanni, Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20 no. 3 (2002), pp. 1221 - 1228 [1.1470514]  [abs].
  61. Kim, Tong-Ho and Yi, Changhyun and Brown, April S. and Moran, Peter and Kuech, Thomas, The Heterogeneous Integration of InAlAs/InGaAs Heterojunction Diodes on GaAs: Impact of Wafer Bonding on Structural and Electrical Characteristics, Proceedings IEEE Lester Eastman Conference on High Performance Devices (2002), pp. 384 - 392  [abs].
  62. Seo, Sangwoo and Kang, Sangbeom and Doolittle, William A. and Lee, K.K. and Huang, S. and Jokerst, N.M. and Brown, A.S. and Brooke, M.A., The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon, IEEE Photonics Technology Letters, vol. 14 no. 2 (2002), pp. 185 - 187 [68.980507]  [abs].
  63. Losurdo, M. and Capezzuto, P. and Bruno, G. and Namkoong, G. and Doolittle, W.A. and Brown, A.S., The chemistry of sapphire nitridation in relation to the GaN structural quality: Why low temperature 200°C nitridation?, Phys. Status Solidi A (Germany), vol. 188 no. 2 (2001), pp. 561 - 5 [1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J]  [abs].
  64. Doolittle, W.A. and Brown, A.S. and Kang, S. and Seo, S.W. and Huang, S. and Jokerst, N.M., Recent advances in III-nitride devices grown on lithium gallate, Phys. Status Solidi A (Germany), vol. 188 no. 2 (2001), pp. 491 - 5 [1521-396X(200112)188:2<491::AID-PSSA491>3.0.CO;2-B]  [abs].
  65. Brown, April S. and Jokerst, Nan Marie and Doolittle, Alan and Brooke, Martin and Kuech, Thomas F. and Seo, Sang-Woo and Kang, Sangbeom and Huang, Sa and Shen, Jeng-Jung, Heterogeneous integration: From substrate technology to active packaging, Technical Digest - International Electron Devices Meeting (2001), pp. 197 - 200 [IEDM.2001.979465]  [abs].
  66. Seo, S.W. and Lee, K.K. and Kang, S. and Huang, S. and Doolittle, W.A. and Jokerst, N.M. and Brown, A.S., GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy, Applied Physics Letters, vol. 79 no. 9 (2001), pp. 1372 - [1.1398320] .
  67. Brown, A.S. and Doolittle, W.A. and Jokerst, N.M. and Kang, S. and Huang, S. and Seo, S.W., Heterogeneous materials integration: Compliant substrates to active device and materials packaging, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 87 no. 3 (2001), pp. 317 - 322 [S0921-5107(01)00730-9]  [abs].
  68. Shen, Jeng-Jung and Brown, April S. and Wang, Yongqian and Wang, Zhong L., Self-assembled quantum dot transformations via anion exchange, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19 no. 4 (2001), pp. 1463 - 1466 [1.1385916]  [abs].
  69. Lee, K.K. and Doolittle, W.A. and Kim, T.-H. and Brown, A.S. and May, G.S. and Stock, S.R. and Zu Rong Dai and Wang, Z.L., A comparative study of surface reconstruction of wurtzite GaN on (0 0 0 1) sapphire by RF plasma-assisted molecular beam epitaxy, Journal of Crystal Growth, vol. 231 no. 1-2 (2001), pp. 8 - 16 [S0022-0248(01)01307-0]  [abs].
  70. Kang, S. and Doolittle, W.A. and Lee, K.K. and Dai, Z.R. and Wang, Z.L. and Stock, S.R. and Brown, A.S., Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy, Journal of Electronic Materials, vol. 30 no. 3 (2001), pp. 156 - 161  [abs].
  71. Namkoong, Gon and Doolittle, W. Alan and Brown, April S., Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy, Applied Physics Letters, vol. 77 no. 26 (2000), pp. 4386 - [1.1334942] .
  72. Jokerst, Nan Marie and Brooke, Martin A. and Laskar, Joy and Wills, D. Scott and Brown, April S. and Ingram, Mary Ann, Building collaborative teams for multi-disciplinary educational projects in optoelectronics, Proceedings of SPIE - The International Society for Optical Engineering, vol. 3831 (2000), pp. 25 - 35 [12.388713]  [abs].
  73. Jokerst, Nan M. and Brooke, Martin A. and Laskar, J. and Wills, D. Scott and Brown, A.S. and Vrazel, M. and Jung, S. and Joo, Y. and Chang, J.J., Microsystem optoelectronic integration for mixed multisignal systems, IEEE Journal on Selected Topics in Quantum Electronics, vol. 6 no. 6 (2000), pp. 1231 - 1239 [2944.902172]  [abs].
  74. Lee, Kyeong K. and Doolittle, William A. and Brown, April S. and May, Gary S. and Stock, Stuart R., Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18 no. 3 (2000), pp. 1448 - 1452 [1.591401]  [abs].
  75. Kang, Sangbeom and Doolittle, W. Alan and Stock, Stuart R. and Brown, April S., Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature, Materials Science Forum, vol. 338 (II (2000), pp. 1499 - 1502  [abs].
  76. Kim, Tong-Ho and Brown, April S. and Metzger, Robert A., Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy, Journal of Electronic Materials, vol. 29 no. 2 (2000), pp. 215 - 221  [abs].
  77. Gon Namkoong and Doolittle, W.A. and Sangbeom Kang and Huang Sa and Brown, A.S. and Stock, S.R., Low temperature nitridation combined with high temperature buffer annealing for high quality GaN grown by plasma-assisted MBE, MRS Internet J. Nitride Semicond. Res. (USA), vol. 5S1 (2000)  [abs].
  78. Brown, April S. and Doolittle, W. Alan, Status and promise of compliant substrate technology, Applied Surface Science, vol. 166 no. 1 (2000), pp. 392 - 398 [S0169-4332(00)00455-4]  [abs].
  79. Brown, April S. and Doolittle, W. Alan and Kang, Sangbeom and Shen, Jeng-Jung and Wang, Z.L. and Dai, Z., Growth of GaN on lithium gallate (LiGaO2) substrates for material integration, Journal of Electronic Materials, vol. 29 no. 7 (2000), pp. 894 - 896  [abs].
  80. Jokerst, N. and Brooke, M.A. and Laskar, J. and Wills, D. and Brown, A.S. and Vendier, O. and Bond, S.W. and Cross, J.B. and Vrazel, M. and Thomas, M. and Lee, M. and Jung, S. and Joo, Y. and Chang, J.J., Smart photonics: optoelectronics integrated with Si CMOS VLSI circuits, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 4109 (2000), pp. 241 - 51  [abs].
  81. Shen, J.-J. and Kim, T.-H. and Brown, A.S., Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates, IEEE International Symposium on Compound Semiconductors, Proceedings (2000), pp. 131 - 135 [ISCS.2000.947142]  [abs].
  82. Matyi, R.J. and Doolittle, W.A. and Brown, A.S., High resolution X-ray diffraction analyses of GaN/LiGaO2, Journal of Physics D: Applied Physics, vol. 32 no. 10A (1999), pp. 61-64 - [313]  [abs].
  83. Kim, T.-H. and Brown, A.S. and Metzger, R.A., Optical and structural properties of strained InAlAs/InAsxP1-x multi-quantum wells grown by solid source molecular beam epitaxy, Journal of Applied Physics, vol. 86 no. 5 (1999), pp. 2622 - 2627 [1.371101]  [abs].
  84. Dagnall, G. and Brown, A.S. and Stock, S.R., Arsenic incorporation in InAsP/InP quantum wells, Journal of Electronic Materials, vol. 28 no. 10 (1999), pp. 1108 - 1110  [abs].
  85. Dagnall, Georgiana and Shen, Jeng-Jung and Kim, Tong-Ho and Metzger, Robert A. and Brown, April S. and Stock, Stuart R., Solid source MBE growth of InAsP/InP quantum wells, Journal of Electronic Materials, vol. 28 no. 8 (1999), pp. 933 - 938  [abs].
  86. Doolittle, W.A. and Brown, A.S., Compliant substrate processes, Materials Research Society Symposium - Proceedings, vol. 570 (1999), pp. 225 - 234  [abs].
  87. Dagnall, G. and Stock, S.R. and Brown, A.S., Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects, Journal of Crystal Growth, vol. 201-202 (1999), pp. 242 - 247 [S0022-0248(98)01330-X]  [abs].
  88. Kang, Sangbeom and Doolittle, William A. and Brown, April S. and Stock, Stuart R., Electrical and structural characterization of AlxGa1-xN/GaN heterostructures grown on LiGaO2 substrates, Applied Physics Letters, vol. 74 no. 22 (1999), pp. 3380 - 3382 [1.123351]  [abs].
  89. Jokerst, Nan Marie and Brooke, Martin A. and Laskar, Joy and Wills, D. Scott and Brown, April S. and Vendier, Olivier and Bond, Steven and Cross, Jeffrey and Vrazel, Michael and Thomas, Mikkel and Lee, Myunghee and Jung, Sungyung and Joo, Yoong Joon and Chang, Jae Joon, Smart photonics: Optoelectronics integrated onto Si CMOS circuits, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2 (1999), pp. 423 - 424 [LEOS.1999.811779]  [abs].
  90. Kropewnicki, Thomas J. and Doolittle, W. Alan and Carter-Coman, Carrie and Kang, Sangboem and Kohl, Paul A. and Jokerst, Nan Marie and Brown, April S., Selective wet etching of lithium gallate, Journal of the Electrochemical Society, vol. 145 no. 5 (1998), pp. 88-90 -  [abs].
  91. Shen, Jeng-Jung and Jokerst, Nan Marie and Brown, April S., Compliant substrate strain modulated epitaxy for WDM laser arrays, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 1 (1998), pp. 95 - 96  [abs].
  92. Brown, April S., Compliant substrate technology: status and prospects, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 16 no. 4 (1998), pp. 2308 - [1.590166] .
  93. Shen, Jeng-Jung and Brown, April S. and Metzger, Robert A. and Sievers, Barry and Bottomley, Lawrence and Eckert, Patrick and Carter, W. Brent, Modification of quantum dot properties via surface exchange and annealing: substrate temperature effects, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 16 no. 3 (1998), pp. 1326 - [1.590068] .
  94. Doolittle, William A. and Kropewnicki, Tom and Carter-Coman, C. and Stock, S. and Kohl, Paul and Jokerst, Nan Marie and Metzger, Robert A. and Kang, Sangbeom and Lee, Kyeong Kyun and May, Gary and Brown, April S., Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 16 no. 3 (1998), pp. 1300 - [1.590005] .
  95. Doolittle, W.A. and Kropewnicki, T. and Carter-Coman, C. and Stock, S. and Kohl, P. and Jokerst, N.M. and Metzger, R.A. and Kang, S. and Lee, K. and May, G. and Brown, A.S., Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate, Nitride Semiconductors Symposium (1998), pp. 283 - 8  [abs].
  96. Doolittle, W.A. and Kang, S. and Kropewnicki, T.J. and Stock, S. and Kohl, P.A. and Brown, A.S., MBE growth of high quality GaN on LiGaO2, J. Electron. Mater. (USA), vol. 27 no. 8 (1998), pp. 58 - 60  [abs].
  97. Carter-Coman, Carrie and Bicknell-Tassius, Robert and Brown, April S. and Jokerst, Nan Marie, Compliant substrates for reduction of strain relief in mismatched overlayers, Materials Research Society Symposium - Proceedings, vol. 441 (1997), pp. 361 - 366  [abs].
  98. Carter-Coman, Carrie and Bicknell-Tassius, Robert and Benz, Rudolph G. and Brown, April S. and Jokerst, Nan Marie, Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates, Journal of the Electrochemical Society, vol. 144 no. 2 (1997), pp. 29-31 -  [abs].
  99. Kromann, R.F. and Bicknell-Tassius, R.N. and Brown, A.S. and Dorsey, J.F. and Lee, K. and May, G., Real-time monitoring of RHEED using machine vision techniques, Journal of Crystal Growth, vol. 175-176 no. pt 1 (1997), pp. 334 - 339 [S0022-0248(96)01184-0]  [abs].
  100. Carter-Coman, Carrie and Bicknell-Tassius, Robert and Brown, April S. and Jokerst, Nan Marie, Metastability modeling of compliant substrate critical thickness using experimental strain relief data, Applied Physics Letters, vol. 71 no. 10 (1997), pp. 1344 - [1.119889] .
  101. Carter-Coman, Carrie and Brown, April S. and Metzger, Robert A. and Jokerst, Nan Marie and Pickering, Jason and Bottomley, Lawrence A., New mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates, Applied Physics Letters, vol. 71 no. 19 (1997), pp. 2773 - [1.120129] .
  102. Carter-Coman, C. and Bicknell-Tassius, R. and Brown, A.S. and Jokerst, N.M., Compliant substrates for reduction of strain relief in mismatched overlayers, Thin Films - Structure and Morphology. Symposium (1997), pp. 361 - 6  [abs].
  103. Doolittle, W.A. and Kropewnicki, T. and Carter-Coman, C. and Stock, S. and Kohl, P. and Jokerst, N.M. and Metzger, R.A. and Kang, S. and Lee, K. and May, G. and Brown, A.S., Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate, Materials Research Society Symposium - Proceedings, vol. 482 (1997), pp. 283 - 288  [abs].
  104. Bicknell-Tassius, Robert N. and Lee, Kyeong and Brown, April S. and Dagnall, Georgianna and May, Gary, Growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach, Journal of Crystal Growth, vol. 175-176 no. pt 2 (1997), pp. 1131 - 1137 [S0022-0248(96)01210-9]  [abs].
  105. Fournier, Francoise and Metzger, Robert A. and Doolittle, Alan and Brown, April S. and Carter-Coman, Carrie and Jokerst, Nan Marie and Bicknell-Tassius, Robert, Growth dynamics of InGaAs/GaAs by MBE, Journal of Crystal Growth, vol. 175-176 no. pt 1 (1997), pp. 203 - 210 [S0022-0248(96)00888-3]  [abs].
  106. Carter-Coman, Carrie and Bicknell-Tassius, Robert and Brown, April S. and Jokerst, Nan Marie, Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction, Applied Physics Letters, vol. 70 no. 13 (1997), pp. 1754 - 1756 [1.118647]  [abs].
  107. Brown, A.S. and Bhattacharya, P. and Singh, J. and Zaman, P. and Sen, S. and Turco, F., Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature, Applied Physics Letters, vol. 68 no. 2 (1996), pp. 220 - [1.116466] .
  108. Carter-Coman, Carrie and Brown, April S. and Bicknell-Tassius, Robert and Jokerst, Nan Marie and Allen, Mark, Strain-modulated epitaxy: a flexible approach to 3-D band structure engineering without surface patterning, Applied Physics Letters, vol. 69 no. 2 (1996), pp. 257 - [1.117942] .
  109. Carter-Coman, Carrie and Brown, April S. and Bicknell-Tassius, Robert and Jokerst, Nan Marie and Fournier, Francoise and Dawson, Douglas E., Strain-modulated epitaxy: modification of growth kinetics via patterned, compliant substrates, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 14 no. 3 (1996), pp. 2170 - [1.588892] .
  110. Cat, Huy H. and Gentile, Antonio and Eble, John C. and Lee, Myunghee and Vendier, Olivier and Joo, Young Joong and Wills, D. Scott and Brooke, Martin and Jokerst, Nan Marie and Brown, April S., SIMPil: An OE integrated SIMD architecture for focal plane processing applications, International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI), Proceedings (1996), pp. 44 - 52 [MPPOI.1996.559035]  [abs].
  111. Carter-Coman, C. and Brown, A.S. and Jokerst, N.M. and Dawson, D.E. and Bicknell-Tassius, R. and Feng, Z.C. and Rajkumar, K.C. and Dagnall, G., Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology, Journal of Electronic Materials, vol. 25 no. 7 (1996), pp. 1044 - 1048  [abs].
  112. Gilbert, E.P. and Reynolds, P.A. and Brown, A.S. and White, J.W., n-paraffin solid solutions: modification of phase separation with carbon number, Chem. Phys. Lett. (Netherlands), vol. 255 no. 4-6 (1996), pp. 373 - 7 [0009-2614(96)00371-5]  [abs].
  113. Cat, Huy H. and Wills, D. Scott and Jokerst, Nan Marie and Brooke, Martin A. and Brown, April S., Three-dimensional, massively parallel, optically interconnected silicon computational hardware and architectures for high-speed IR scene generation, Proceedings of SPIE - The International Society for Optical Engineering, vol. 2469 (1995), pp. 141 - 145 [12.210584]  [abs].
  114. Rosenbaum, Steven E. and Kormanyos, Brian K. and Jelloian, Linda M. and Matloubian, Mehran and Brown, April S. and Larson, Lawrence E. and Nguyen, Loi D. and Thompson, Mark A. and Katehi, Linda P.B. and Rebeiz, Gabriel M., 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators, IEEE Transactions on Microwave Theory and Techniques, vol. 43 no. 4 pt 2 (1995), pp. 927 - 933 [22.375256]  [abs].
  115. Brown, A.S. and Schmitz, A.E. and Nguyen, L.D. and Henige, J.A. and Larson, L.E., Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE, IEEE International Conferece on Indium Phosphide and Related Materials (1994), pp. 263 - 266 [ICIPRM.1994.328217]  [abs].
  116. Schramm, J.E. and Hu, E.L. and Merz, J.L. and Brown, J.J. and Melendes, M.A. and Thompson, M.A. and Brown, A.S., Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6 (1993), pp. 2280 - 3 [1.586890]  [abs].
  117. Brown, J.J. and Brown, A.S. and Rosenbaum, S.E. and Schmitz, A.S. and Matloubian, M. and Larson, L.E. and Melendes, M.A. and Thompson, M.A., Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout, IEEE Trans. Electron Devices (USA), vol. 40 no. 11 (1993), pp. 2111 - 12 [16.239781]  [abs].
  118. Matloubian, Mehran and Brown, April S. and Nguyen, Loi D. and Melendes, Melissa A. and Larson, Lawrence E. and Delaney, Michael J. and Pence, John E. and Rhodes, Richard A. and Thompson, Mark A. and Henige, Joseph A., High-power V-band AlInAs/GaInAs on InP HEMT's, IEEE Electron Device Letters, vol. 14 no. 4 (1993), pp. 188 - 189 [55.215155]  [abs].
  119. Rosenbaum, Steven E. and Jelloian, Linda M. and Brown, April S. and Thompson, Mark A. and Matloubian, Mehran and Larson, Lawrence E. and Lohr, Ross and Kormanyos, Brian K. and Rebeiz, Gabriel M. and Katehi, Linda P.B., 213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator, Technical Digest - International Electron Devices Meeting (1993), pp. 924 - 926 [IEDM.1993.347470]  [abs].
  120. Rosenbaum, Steven E. and Jelloian, Linda M. and Larson, Lawrence E. and Mishra, Umesh K. and Pierson, Deborah A. and Thompson, Mark S. and Liu, Takyiu and Brown, April S., 2-GHz three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier, IEEE Microwave and Guided Wave Letters, vol. 3 no. 8 (1993), pp. 265 - 267 [75.242220]  [abs].
  121. Brown, A.S. and Henige, J.A. and Schmitz, A.E. and Larson, L.E., Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48 < x < 0.7)-Ga0.47In0.53As heterostructures, Applied Physics Letters, vol. 62 no. 1 (1993), pp. 66 - [1.108821] .
  122. Matloubian, Mehran and Jelloian, Linda M. and Brown, April S. and Nguyen, Loi D. and Larson, Lawrence E. and Delaney, M.J. and Thompson, Mark A. and Rhodes, R.A. and Pence, J.E., V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's, IEEE Transactions on Microwave Theory and Techniques, vol. 41 no. 12 (1993), pp. 2206 - 2210 [22.260707]  [abs].
  123. Matloubian, M. and Brown, A.S. and Nguyen, L.D. and Melendes, M.A. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., 20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT, IEEE Microwave and Guided Wave Letters, vol. 3 no. 5 (1993), pp. 142 - 144 [75.217211]  [abs].
  124. Larson, L.E. and Matloubian, M.M. and Brown, J.J. and Brown, A.S. and Rhodes, R. and Crampton, D. and Thompson, M., AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers, Electronics Letters, vol. 29 no. 15 (1993), pp. 1324 - 1326  [abs].
  125. Zakharov, N.D. and Liliental-Weber, Z. and Swider, W. and Brown, A.S. and Metzger, R., Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures, Applied Physics Letters, vol. 63 no. 20 (1993), pp. 2809 - [1.110294] .
  126. Matloubian, M. and Jelloian, L.M. and Brown, A.S. and Nguyen, L.D. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs, IEEE MTT-S International Microwave Symposium Digest, vol. 2 (1993), pp. 535 - 537 [MWSYM.1993.276882]  [abs].
  127. Zakharov, N.D. and Liliental-Weber, Z. and Swider, W. and Washburn, J. and Brown, A.S. and Metzger, R., Ordering in InGaAs/InAlAs layers, Journal of Electronic Materials, vol. 22 no. 12 (1993), pp. 1495 - 1498  [abs].
  128. Nguyen, L.D. and Brown, A.S. and Thompson, M.A. and Jelloian, L.M., 50 nm InP high electron mobility transistors, Microw. J. (USA), vol. 36 no. 6 (1993), pp. 96, 98, 101 -  [abs].
  129. Metzger, R.A. and Brown, A.S. and McCray, L.G. and Henige, J.A., Structural and electrical properties of low temperature GaInAs, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 3 (1993), pp. 798 - 801 [1.586792]  [abs].
  130. Brown, A.S. and Metzger, R.A. and Henige, J.A., Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 3 (1993), pp. 817 - 19 [1.586753]  [abs].
  131. Kiziloglu, K. and Hashemi, M.M. and Lie-Wei Yin and Yuan Jing Li and Petroff, P.M. and Mishra, U.K. and Brown, A.S., Rapid thermal annealing characteristics of bulk AlInAs/nP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping, J. Appl. Phys. (USA), vol. 72 no. 8 (1992), pp. 3798 - 802 [1.352277]  [abs].
  132. Nguyen, Loi D. and Brown, April S. and Thompson, Mark A. and Jelloian, Linda M., 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors, IEEE Transactions on Electron Devices, vol. 39 no. 9 (1992), pp. 2007 - 2014 [16.155871]  [abs].
  133. Brown, A.S. and Nguyen, L.D. and Metzger, R.A. and Matloubian, M. and Schmitz, A.E. and Lui, M. and Wilson, R.G. and Henige, J.A., Reduced silicon movement in GalnAs/AlInAs HEMT structures with low temperature AlInAs spacers (1992), pp. 281 - 286 .
  134. Nguyen, Loi D. and Brown, April S. and Thompson, Mark A. and Jelloian, Linda M. and Larson, Larry E. and Matloubian, Mehran, 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors, IEEE Electron Device Letters, vol. 13 no. 3 (1992), pp. 143 - 145 [55.144991]  [abs].
  135. Metzger, R.A. and Brown, A.S. and Wilson, R.G. and Liu, T. and Stanchina, W.E. and Nguyen, L.D. and Schmitz, A.E. and McCray, L.G. and Henige, J.A., The use of low temperature AlInAs and GaInAs lattice matched to InP in the fabrication of HBTs and HEMTs, Low Temperature (LT) GaAs and Related Materials Symposium (1992), pp. 259 - 64  [abs].
  136. Brown, A.S. and Nguyen, L.D. and Metzger, R.A. and Schmitz, A.E. and Henige, J.A., Growth and properties of high mobility strained inverted AlInAs-GaInAs modulation doped structures, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 10 no. 2 (1992), pp. 1017 - 19 [1.586402]  [abs].
  137. Brown, A.S. and Metzger, R.A. and Henige, J.A. and Nguyen, L. and Lui, M. and Wilson, R.G., Effect of Si movement on the electrical properties of inverted AlInAs-GaInAs modulation doped structures, Appl. Phys. Lett. (USA), vol. 59 no. 27 (1991), pp. 3610 - 12 [1.106394]  [abs].
  138. Metzger, R.A. and Brown, A.S. and Stanchina, W.E. and Lui, M. and Wilson, R.G. and Kargodorian, T.V. and McCray, L.G. and Henige, J.A., Growth and characterization of low temperature AlInAs, Journal of Crytal Growth, vol. 111 no. 1-4 (1991), pp. 445 - 449 [0022-0248(91)91017-5]  [abs].
  139. Schmitz, A. E. and Nguyen, L. D. and Brown, A. S. and Metzger, R. A., InP-based inverted high electron mobility transistors, IEEE Transactions on Electron Devices, vol. 38 no. 12 (1991), pp. 2702 - [16.158723]  [abs].
  140. Matloubian, M. and Nguyen, L. D. and Brown, A. S. and Larson, L. E. and Melendes, M. A. and Thompson, M. A., High power and high efficiency AlInAs/GaInAs on InP HEMTs, IEEE MTT-S International Microwave Symposium Digest, vol. 2 (1991), pp. 721 - 724 [MWSYM.1991.147105]  [abs].
  141. Brown, A.S. and Nguyen, L.D. and Metzger, R.A. and Matloubian, M. and Schrnitz, A.E. and Lui, M. and Wilson, R.G. and Henige, J.A., Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers, Institute of Physics Conference Series, vol. 120 (1991), pp. 281 - 286  [abs].
  142. Brown, A.S., An overview of microwave waveguide technology, Electrotechnology (UK), vol. 2 no. 3 (1991), pp. 120 - 2  [abs].
  143. Brown, A.S. and Spackman, M.A., A model study of the κ-refinement procedure for fitting valence electron densities, Acta Crystallogr. A, Found. Crystallogr. (Denmark), vol. A47 (1991), pp. 21 - 9 [S0108767390009163]  [abs].
  144. Brown, A.S., The effects and implications of ESD on semiconductor technology, Electrotechnology (UK), vol. 1 no. 4 (1990), pp. 217 - 19  [abs].
  145. Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Thompson, M. and Rosenbaum, S.E. and Nguyen, L.D. and Solomon, P.M. and Kiehl, R. and Kwark, Y.H., Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 1288 (1990), pp. 21 - 9  [abs].
  146. Delaney, M.J. and Brown, A.S. and Mishra, U.K. and Chou, C.S. and Larson, L.E. and Nguyen, L. and Jensen, J., Low temperature MBE growth of GaAs and AllnAs for high speed devices (1990), pp. 189 - 194 .
  147. Mishra, U.K. and Brown, A.S. and Jensen, J.F., High performance AlInAs-GaInAs HEMTs and HBTs, Gallium Arsenide and Related Compounds 1989. Proceedings of the Sixteenth International Symposium (1990), pp. 605 - 12  [abs].
  148. Brown, A.S. and Mishra, U.K. and Rosenbaum, S.E., Effect of interface and alloy quality on the DC and RF performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's., IEEE Transactions on Electron Devices, vol. 36 no. 4 pt 1 (1989), pp. 641 - 645 [16.22468]  [abs].
  149. Delaney, M.J. and Brown, A.S. and Mishra, U.K. and Chou, C.S. and Larson, L.E. and Nguyen, L. and Jensen, J., Low temperature MBE growth of GaAs and AlInAs for high speed devices (1989), pp. 64 - 72 [CORNEL.1989.79822]  [abs].
  150. Brown, A.S. and Mishra, U.K. and Larson, L.E. and Rosenbaum, S.E., The elimination of DC I-V anomalies in Ga0.47In0.53As-Al0.48In0.52As HEMTs, Gallium Arsenide and Related Compounds 1988. Proceedings of the Fifteenth International Symposium (1989), pp. 445 - 8  [abs].
  151. Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Thompson, M. and Nguyen, L.D. and Rosenbaum, S.E., Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs, Technical Digest - International Electron Devices Meeting (1989), pp. 101 - 104 [IEDM.1989.74237]  [abs].
  152. Brown, April S. and Chou, Chia S. and Delaney, Michael J. and Hooper, Catherine E. and Jensen, Joseph F. and Larson, Lawrence E. and Mishra, Umesh K. and Nguyen, Loi D. and Thompson, Mark S., Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (1989), pp. 143 - 146  [abs].
  153. Mishra, Umesh K. and Brown, April S. and Delaney, M.J. and Greiling, Paul T. and Krumm, Charles F., AlInAs-GaInAs HEMT for microwave and millimeter-wave applications, IEEE Transactions on Microwave Theory and Techniques, vol. 37 no. 9 (1989), pp. 1279 - 1285 [22.32210]  [abs].
  154. Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Melendes, M.A. and Thompson, M. and Rosenbaum, S.E. and Larson, L.E., Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's, IEEE Transactions on Electron Devices, vol. 36 no. 11 pt 1 (1989), pp. 2616 - [16.43731]  [abs].
  155. Brown, April S. and Mishra, Umesh K. and Chou, C.S. and Hooper, C.E. and Melendes, M.A. and Thompson, M. and Larson, L.E. and Rosenbaum, S.E. and Delaney, M.J., AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE, IEEE Electron Device Letters, vol. 10 no. 12 (1989), pp. 565 - 567 [55.43141]  [abs].
  156. Jensen, Joseph F. and Mishra, Umesh K. and Brown, April S. and Salmon, Linton G. and Delaney, M.J., Ultrahigh speed static and dynamic frequency divider circuits, Microwave Journal, vol. 32 no. 3 (1989), pp. 10 -  [abs].
  157. Delaney, M.J. and Chou, C.S. and Larson, L.E. and Jensen, J.F. and Deakin, D.S. and Brown, A.S. and Hooper, W.W. and Thompson, M.A. and McCray, L.G. and Rosenbaum, S.E., GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology, Proceedings of the Custom Integrated Circuits Conference (1989), pp. 18 - 3 [CICC.1989.56782]  [abs].
  158. Delaney, M.J. and Chou, C.S. and Larson, Lawrence E. and Jensen, Joseph F. and Deakin, D.S. and Brown, April S. and Hooper, William W. and Thompson, M.A. and McCray, L.G. and Rosenbaum, Steven E., Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications, IEEE Electron Device Letters, vol. 10 no. 8 (1989), pp. 355 - 357 [55.31755]  [abs].
  159. Mishra, Umesh K. and Jensen, Joseph F. and Rensch, D.B. and Brown, April S. and Stanchina, William E. and Trew, Robert J. and Pierce, M.W. and Kargodorian, Tsolag V., Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits, IEEE Electron Device Letters, vol. 10 no. 10 (1989), pp. 467 - 469 [55.43102]  [abs].
  160. Jensen, J.F. and Mishra, U.K. and Brown, A.S. and Salmon, L.G. and Delaney, M.J., Ultrahigh speed static and dynamic frequency divider circuits, Microw. J. (USA), vol. 32 no. 3 (1989), pp. 131 - 2  [abs].
  161. Brown, A.S. and Delaney, M.J. and Singh, J., The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 7 no. 2 (1989), pp. 384 - 7 [1.584756]  [abs].
  162. Yu-Peng Hu and Petroff, P.M. and Xueyu Qian and Brown, A.S., Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces, Appl. Phys. Lett. (USA), vol. 53 no. 22 (1988), pp. 2194 - 6 [1.100280]  [abs].
  163. Brown, A.S. and Mishra, U.K. and Henige, J.A. and Delaney, M.J., The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality, J. Appl. Phys. (USA), vol. 64 no. 7 (1988), pp. 3476 - 80 [1.341482]  [abs].
  164. Mishra, Umesh K. and Jensen, Joseph F. and Brown, April S. and Thompson, M.A. and Jelloian, L.M. and Beaubien, Randall S., Ultra-high-speed digital circuit performance in 0.2-μm gate-length AlInAs/GaInAs HEMT technology., IEEE Electron Device Letters, vol. 9 no. 9 (1988), pp. 482 - 484 [6952]  [abs].
  165. Mishra, U.K. and Brown, A.S. and Rosenbaum, S.E. and Delaney, M.J. and Vaughn, S. and White, K., Noise performance of submicrometer AlInAs-GaInAs HEMT's, IEEE Transactions on Electron Devices, vol. 35 no. 12 (1988), pp. 2441 - [8861]  [abs].
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  173. Brown, A.S. and Mishra, U.K. and Henige, J.A. and Delaney, M.J., The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 6 no. 2 (1988), pp. 678 - 81 [1.584389]  [abs].
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  175. Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Hackett, L.H. and Delaney, M.J., High performance submicrometer AlInAs-GaInAs HEMTs, IEEE Trans. Electron Devices (USA), vol. ED-34 no. 11 (1987), pp. 2358 -  [abs].
  176. Palmateer, L. F. and Tasker, P. J. and Itoh, T. and Brown, A. S. and Wicks, G. W. and Eastman, L. F., MICROWAVE CHARACTERISATION OF 1 mu m-GATE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As/InP MODFETs., Electronics Letters, vol. 23 no. 1 (1987), pp. 53 - 55  [abs].
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  178. Mishra, U.K. and Beaubien, R.S. and Delaney, M.J. and Brown, A.S. and Hackett, L.H., Low noise 0.1-μm GaAs MESFETS by MBE, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2) (1987), pp. 177 - 89  [abs].
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  180. Mishra, U. K. and Beaubien, R. S. and Delaney, M. J. and Brown, A. S. and Hackett, L. H., LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE. (1987), pp. 177 - 189  [abs].
  181. Griem, H.T. and Hsieh, K.H. and D'Haenens, I.J. and Delaney, M.J. and Henige, J.A. and Wicks, G.W. and Brown, A.S., Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 5 no. 3 (1987), pp. 785 - 91 [1.583751]  [abs].
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  183. Itoh, T. and Brown, A.S. and Camnitz, L.H. and Wicks, G.W. and Berry, J.D. and Eastman, L.F., Depletion- and enhancement-mode Al0.48In0.52As/Ga0.47In0.53As modulation-doped field-effect transistors with a recessed gate structure, Gallium Arsenide and Related Compounds 1985. Proceedings of the Twelfth International Symposium (1986), pp. 571 - 6  [abs].
  184. Griem, H. T. and Hsieh, K. H. and D'Haenens, I. J. and Delaney, M. J. and Henige, J. A. and Wicks, G. W. and Brown, A. S., CHARACTERIZATION OF STRAINED GaInAs/AlInAs QUANTUM WELL TEGFETS GROWN BY MOLECULAR BEAM EPITAXY., Journal of Crystal Growth, vol. 81 no. 1-4 (1986), pp. 383 - 390 [0022-0248(87)90421-0]  [abs].
  185. Mishra, U.K. and Beaubien, R.S. and Delaney, M.J. and Brown, A.S. and Hackett, L.H., MBE grown GaAs MESFETs with ultra-high gm and fT, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2) (1986), pp. 829 - 31  [abs].
  186. Brown, A.S. and Wicks, G.W. and Eastman, L.F., Mn redistribution in doped GaInAs, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 4 no. 2 (1986), pp. 543 - 4 [1.583424]  [abs].
  187. Brown, A. S. and Palmateer, S. C. and Wicks, G. W. and Eastman, L. F. and Calawa, A. R., BEHAVIOR OF UNINTENTIONAL IMPURITIES IN Ga//0//. //4//7In//0//. //5//3As GROWN BY MBE., Journal of Electronic Materials, vol. 14 no. 3 (1985), pp. 367 - 378  [abs].
  188. Itoh, T. and Brown, A.S. and Camnitz, L.H. and Wicks, G.W. and Berry, J.D. and Eastman, L.F., A recessed gate Al0.48In0.52As/Ga0.47In0.53As modulation doped field effect transistor, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3) (1985), pp. 92 - 101  [abs].
  189. Brown, A.S. and Palmateer, S.C. and Wicks, G.W. and Eastman, L.F. and Calawa, A.R. and Hitzman, C., The heat treatment of Fe-doped InP substrates for the growth of higher purity Ga0.47In0.53As by MBE, Semi-Insulating III-V materials (1984), pp. 36 - 40  [abs].
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