Papers Published

1. Jensen, J.F. and Mishra, U.K. and Brown, A.S. and Salmon, L.G. and Delaney, M.J., Ultrahigh speed static and dynamic frequency divider circuits, Microw. J. (USA), vol. 32 no. 3 (1989), pp. 131 - 2 .
   (last updated on 2007/04/14)

   Abstract:
   The authors describe the design, fabrication and testing of high speed GaAs MESFET and AlInAs-GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at frequencies up to 26.6 GHz. When the same static divider designs were implemented in AlInAs-GaInAs HEMT technology, the performance improved to frequencies up to 25.4 GHz. Electro-optic testing techniques were used to verify the performance of the GaAs MESFET dividers

   Keywords:
   aluminium compounds;field effect integrated circuits;frequency dividers;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;integrated logic circuits;MMIC;Schottky gate field effect transistors;