Papers Published

1. Mishra, U.K. and Jensen, J.F. and Rensch, D.B. and Brown, A.S. and Pierce, M.W. and McCray, L.G. and Kargodorian, T.V. and Hoefer, W.S. and Kastris, R.E., 48 GHz AlInAs/GaInAs heterojunction bipolar transistors, Technical Digest - International Electron Devices Meeting (1988), pp. 873 - 875 [IEDM.1988.32948] .
   (last updated on 2007/04/14)

   Abstract:
   The authors report on the DC and RF performance of self-aligned Al_0.48In_0.52As-Ga_0.47In_0.53As heterojunction bipolar transistors. The properties that make the AlInAns/GalnAs material system extremely attractive for heterojunction bipolar transistors are discussed. The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of heterojunction bipolar transistor devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5-μm × 5-μm emitter are reported.

   Keywords:
   Semiconducting Aluminum Compounds;Semiconducting Gallium Compounds;Band Structure;Molecular Beam Epitaxy;Microwave Measurements;