Papers Published

1. Seo, Sangwoo and Kang, Sangbeom and Doolittle, William A. and Lee, K.K. and Huang, S. and Jokerst, N.M. and Brown, A.S. and Brooke, M.A., The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon, IEEE Photonics Technology Letters, vol. 14 no. 2 (2002), pp. 185 - 187 [68.980507] .
   (last updated on 2007/04/14)

   Abstract:
   The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO₂-Si is reported herein. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO₂) growth substrate using selective etching, and contact bonded onto an SiO₂-Si host substrate. The thin-film MSMs exhibited a dark current of 13.36 pA and an UV photoresponse at 308 nm of 0.11 A/W at a reverse bias voltage of 20 V. This first demonstration of GaN thin-film device integration onto SiO₂-Si using a low-temperature integration process, combined with the advances in GaN material quality on LiGaO₂ substrates, enables the integration of GaN devices with Si circuitry for heterogeneously integrated systems.

   Keywords:
   Thin film devices;Gallium nitride;Semiconducting silicon;Silica;Low temperature operations;Etching;Substrates;Lithium compounds;Molecular beam epitaxy;