Publications by Jeffrey T. Glass.

Papers Published

  1. Peng, Qing and Lewis, Jay S. and Hoertz, Paul G. and Glass, Jeffrey T. and Parsons, Gregory N., Atomic layer deposition for electrochemical energy generation and storage systems, Journal of Vacuum Science & Technology A, vol. 30 no. 1 (January, 2012)  [abs].
  2. Raut, Akshay S. and Parker, Charles B. and Stoner, Brian R. and Glass, Jeffrey T., Effect of porosity variation on the electrochemical behavior of vertically aligned multi-walled carbon nanotubes, Electrochemistry Communications, vol. 190 (2012), pp. 138--141 [S1388248112001208], [doi] .
  3. Stoner, Brian R. and Glass, Jeffrey T., Carbon nanostructures: A morphological classification for charge density optimization, Diamond and Related Materials, vol. 230 (2012), pp. 130--134 [S0925963512000520], [doi] .
  4. Stoner, Brian R. and Raut, Akshay S. and Brown, Billyde and Parker, Charles B. and Glass, Jeffrey T., Graphenated carbon nanotubes for enhanced electrochemical double layer capacitor performance, Applied Physics Letters, vol. 99 no. 18 (October, 2011)  [abs].
  5. Stoner, Brian R. and Piascik, Jeffrey R. and Gilchrist, Kristin Hedgepath and Parker, Charles B. and Glass, Jeffrey T., A Bipolar Vacuum Microelectronic Device, Ieee Transactions on Electron Devices, vol. 58 no. 9 (September, 2011), pp. 3189--3194 .
  6. Evans-Nguyen, Theresa and Parker, Charles B. and Hammock, Christina and Monica, Andrew H. and Adams, Elena and Becker, Luann and Glass, Jeffrey T. and Cotter, Robert J., Carbon Nanotube Electron Ionization Source for Portable Mass Spectrometry, Analytical Chemistry, vol. 83 no. 17 (September, 2011), pp. 6527--6531 .
  7. Fissell, William H. and Conlisk, A. T. and Datta, Subhra and Magistrelli, Jeffrey M. and Glass, Jeffrey T. and Fleischman, Aaron J. and Roy, Shuvo, High Knudsen number fluid flow at near-standard temperature and pressure conditions using precision nanochannels, Microfluidics and Nanofluidics, vol. 10 no. 2 (February, 2011), pp. 425--433 .
  8. Brown, B. and Parker, C. B. and Stoner, B. R. and Glass, J. T., Growth of vertically aligned bamboo-like carbon nanotubes from ammonia/methane precursors using a platinum catalyst, Carbon, vol. 49 no. 1 (January, 2011), pp. 266--274 .
  9. Brown, B. and Parker, C. B. and Stoner, B. R. and Grill, W. M. and Glass, J. T., Electrochemical Charge Storage Properties of Vertically Aligned Carbon Nanotube Films: The Activation-Enhanced Length Effect, Journal of the Electrochemical Society, vol. 158 no. 12 (2011), pp. K217--K224 .
  10. Wolter, S. D. and Brown, B. and Parker, C. B. and Stoner, B. R. and Glass, J. T., The effect of gold on platinum oxidation in homogeneous Au-Pt electrocatalysts, Applied Surface Science, vol. 257 no. 5 (December, 2010), pp. 1431--1436 .
  11. Raut, A. S. and Parker, C. B. and Glass, J. T., A method to obtain a Ragone plot for evaluation of carbon nanotube supercapacitor electrodes, Journal of Materials Research, vol. 25 no. 8 (August, 2010), pp. 1500--1506 .
  12. Natarajan, S. and Parker, C. B. and Piascik, J. R. and Gilchrist, K. H. and Stoner, B. R. and Glass, J. T., Analysis of 3-panel and 4-panel microscale ionization sources, Journal of Applied Physics, vol. 107 no. 12 (June, 2010) .
  13. Ma, S. Y. and Chen, H. X. and Glass, J. T. and Parker, C. B. and Li, Y. and Laudon, M. and Romanowicz, B., Influence of Al-doping and Oxygen Partial Pressure on the Optical Properties of ZnO Films, Nanotech Conference & Expo 2009, Vol 1, Technical Proceedings (2009), pp. 273--276 .
  14. Natarajan, Srividya and Gilchrist, Kristin H. and Piascik, Jeffrey R. and Parker, Charles B. and Glass, Jeffrey T. and Stoner, Brian R., Simulation and testing of a lateral, microfabricated electron-impact ion source, Applied Physics Letters, vol. 94 no. 4 (January, 2009) .
  15. Natarajan, Srividya and Parker, Charles B. and Glass, Jeffrey T. and Bower, Christopher A. and Gilchrist, Kristin H. and Piascik, Jeffrey R. and Stoner, Brian R. and IEEE, High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices, 2008 Ieee International Vacuum Electronics Conference (2008), pp. 24--25 .
  16. Carlsson, Bo and Dumitriu, Monica and Glass, Jeffrey T. and Nard, Craig Allen and Barrett, Richard, Intellectual property (IP) management: organizational processes and structures, and the role of IP donations, Journal of Technology Transfer, vol. 33 no. 6 (December, 2008), pp. 549--559 .
  17. Zhang, Xiao Dong and Lewis, Jay S. and Parker, Charles B. and Glass, Jeffrey T. and Wolter, Scott D., Measurement of reactive and condensable gas permeation using a mass spectrometer, Journal of Vacuum Science & Technology a, vol. 26 no. 5 (September, 2008), pp. 1128--1137 .
  18. Natarajan, Srividya and Parker, Charles B. and Glass, Jeffrey T. and Piascik, Jeffrey R. and Gilchrist, Kristin H. and Bower, Christopher A. and Stoner, Brian R., High voltage microelectromechanical systems platform for fully integrated, on-chip, vacuum electronic devices, Applied Physics Letters, vol. 92 no. 22 (June, 2008)  [abs].
  19. Naskar, S. and Wolter, S. D. and Bower, C. A. and Stoner, B. R. and Glass, J. T., Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study, Journal of Materials Research, vol. 23 no. 5 (May, 2008), pp. 1433--1442  [abs].
  20. Brown, B. and Wolter, S. D. and Stoner, B. R. and Glass, J. T., Alloying effects of cosputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte, Journal of the Electrochemical Society, vol. 155 no. 8 (2008), pp. B852--B859  [abs].
  21. Evans, R. D. and Doll, G. L. and Meng, W. J. and Mei, F. and Glass, J. T., Effects of applied substrate bias during reactive sputter deposition of nanocomposite tantalum carbide/amorphous hydrocarbon thin films, Thin Solid Films, vol. 515 no. 13 (May, 2007), pp. 5403--5410  [abs].
  22. Bower, Christopher A. and Gilchrist, Kristin H. and Piascik, Jeffrey R. and Stoner, Brian R. and Natarajan, Srividya and Parker, Charles B. and Wolter, Scott D. and Glass, Jeffrey T., On-chip electron-impact ion source using carbon nanotube field emitters, Applied Physics Letters, vol. 90 no. 12 (March, 2007), pp. 124102 - [1.2715457]  [abs].
  23. Gilchrist, K. H. and Bower, C. A. and Lueck, M. R. and Piascik, J. R. and Stoner, B. R. and Natarajan, S. and Parker, C. B. and Glass, J. T., 2007 IEEE Sensors, Vols 1-3, IEEE Sensors (2007), pp. 1372--1375 .
  24. X. D. Zhang and J. S. Lewis and S. D. Wolter and C. B. Parker and J. T. Glass, High sensitivity permeation measurement system for "ultrabarrier" thin films, Journal Of Vacuum Science & Technology A, vol. 25 no. 6 (2007), pp. 1587 -- 1593  [abs].
  25. Nemanich, Robert J. and Glass, Jeffrey T., Proceedings of the joint 11th International Conference on New Diamond Science and Technology and the 9th Applied Diamond Conference, Research Triangle Park, North Carolina, 15-19 May 2006, Diamond and Related Materials, vol. 15 no. 11-12 (November, 2006), pp. VII--VII .
  26. Evans, R. D. and Doll, G. L. and Glass, J. T., Mechanical property development in reactively sputtered tantalum carbide/amorphous hydrocarbon thin films, Journal of Materials Research, vol. 21 no. 6 (June, 2006), pp. 1500--1511 [0174]  [abs].
  27. Bower, C.A. and Gilchrist, K.H. and Broderick, S. and Piascik, J.R. and Stoner, B.R. and Parker, C.B. and Natarajan, S. and Wolter, S.D. and Glass, J.T., High voltage compatible micromachined vacuum electronic devices with carbon nanotube cold cathode, 2006 IEEE International Vacuum Electronics Conference held jointly with 2006 IEEE International Vacuum Electron Sources (IEEE Cat. No.06EX1278) (2006), pp. pp. 471--472  [abs].
  28. Nemanich, Robert J. and Glass, Jeffrey T., ICNDST and ADC 2006 presents latest research in diamond and related materials, MRS Bulletin, vol. 31 no. 9 (2006), pp. 696 -  [abs].
  29. Yang, P. C. and Prater, J. T. and Liu, W. and Glass, J. T. and Davis, R. F., The formation of epitaxial hexagonal boron nitride on nickel substrates, Journal of Electronic Materials, vol. 34 no. 12 (December, 2005), pp. 1558--1564  [abs].
  30. Naskar, S. and Wolter, S. D. and Bower, C. A. and Stoner, B. R. and Glass, J. T., Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films, Applied Physics Letters, vol. 87 no. 26 (December, 2005), pp. 261907 - [1.2158022]  [abs].
  31. Evans, Ryan D. and Howe, Jane Y. and Bentley, James and Doll, Gary L. and Glass, Jeffrey T., Influence of deposition parameters on the composition and structure of reactively sputtered nanocomposite TaC/a-C:H thin films, Journal of Materials Research, vol. 20 no. 9 (2005), pp. 2583 - 2596 [0324]  [abs].
  32. Naskar, S. and Bower, C.A. and Yadon, L.N. and Wolter, S.D. and Stoner, B.R. and Glass, J.T., Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films, Solid-State Chemistry of Inorganic Materials V (Materials Research Society Symposium Proceedings Vol. 848) (2005), pp. 171 - 6  [abs].
  33. Naskar, S. and Bower, C.A. and Weiter, S.D. and Stoner, B.R. and Glass, J.T., Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma, Materials Research Society Symposium Proceedings, vol. 862 (2005), pp. 61 - 66  [abs].
  34. Naskar, S. and Bower, C. A. and Wolter, S. D. and Stoner, B. R. and Glass, J. T. and Collins, R. W. and Taylor, P. C. and Kondo, M. and Carius, R. and Biswas, R., Amorphous and Nanocrystalline Silicon Science and Technology-2005, vol. 862 (2005), pp. 61--66 .
  35. Naskar, S. and Bower, C. A. and Yadon, L. N. and Wolter, S. D. and Stoner, B. R. and Glass, J. T. and Li, J. and Brese, N. E. and Kanatzidis, M. G. and Jansen, M., Solid-State Chemistry of Inorganic Materials V, vol. 848 (2005), pp. 171--176 .
  36. Naskar, S. and Bower, C. A. and Wolter, S. D. and Stoner, B. R. and Glass, J. T., Amorphous and Nanocrystalline Silicon Science and Technology-2005, Materials Research Society Symposium Proceedings, edited by Collins, R. W. and Taylor, P. C. and Kondo, M. and Carius, R. and Biswas, R., vol. 862 (2005), pp. 61--66 .
  37. Evans, R. D. and Bentley, J. and More, K. L. and Doll, G. L. and Glass, J. T., Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen, Journal of Applied Physics, vol. 96 no. 1 (July, 2004), pp. 273--279 [1.1760232]  [abs].
  38. Holmes, Joseph S. and Glass, Jeffrey T., Internal R and D - Vital but only one piece of the innovation puzzle, Research Technology Management, vol. 47 no. 5 (2004), pp. 7 - 10  [abs].
  39. Purswani, J.M. and Pons, A.P. and Glass, J.T. and Evans, R.D. and Cogdell, J.D., Effects of annealing on the mechanical and electrical properties of DC sputtered tantalum pentoxide (Ta2O5) thin films, Materials Research Society Symposium Proceedings, vol. 811 (2004), pp. 63 - 68  [abs].
  40. Purswani, J. M. and Pons, A. P. and Glass, J. T. and Evans, R. D. and Cogdell, J. D. and Morais, J. and Kumar, D. and Houssa, M. and Singh, R. K. and Landheer, D. and Ramesh, R. and Wallace, R. M. and Guha, S. and Koinuma, H., Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions, vol. 811 (2004), pp. 63--68 .
  41. Glass, Jeffrey T. and Ensing, Ingrid Morris and DeSanctis, Gerardine, Managing the ties between central R and D and business units, Research Technology Management, vol. 46 no. 1 (2003), pp. 24 - 31  [abs].
  42. DeSanctis, G. and Glass, J. T. and Ensing, I. M., Organizational designs for R&D, Academy of Management Executive, vol. 16 no. 3 (August, 2002), pp. 55--66 .
  43. Evans, Ryan D. and Doll, Gary L. and Morrison Jr., Philip W. and Bentley, James and More, Karren L. and Glass, Jeffrey T., Relationships between the structural, chemical, and mechanical properties of Si-aC:H thin films, Materials Research Society Symposium - Proceedings, vol. 697 (2002), pp. 261 - 270  [abs].
  44. Evans, Ryan D. and Doll, Gary L. and Morrison Jr, Philip W. and Bentley, James and More, Karren L. and Glass, Jeffrey T., The effects of structure, composition, and chemical bonding on the mechanical properties of Si-aC:H thin films, Surface and Coatings Technology, vol. 157 no. 2-3 (2002), pp. 197 - 206 [S0257-8972(02)00164-0]  [abs].
  45. Evans, Ryan D. and Doll, Gary L. and Glass, Jeffrey T., Relationships between the thermal stability, friction, and wear properties of reactively sputtered Si-aC:H thin films, Journal of Materials Research, vol. 17 no. 11 (2002), pp. 2888 - 2896  [abs].
  46. Evans, R. D. and Doll, G. L. and Morrison, P. W. and Bentley, J. and More, K. L. and Glass, J. T. and Meng, W. J. and Kumar, A. and Cheng, Y. T. and Veprek, S. and Chung, Y. W., Surface Engineering 2001 - Fundamentals and Applications, vol. 697 (2001), pp. 261--270 .
  47. Glass, J. T. and Fox, B. A. and Dreifus, D. L. and Stoner, B. R., Diamond for electronics: Future prospects of diamond SAW devices, Mrs Bulletin, vol. 23 no. 9 (September, 1998), pp. 49--55  [abs].
  48. Angus, J. C. and Bachmann, P. K. and BuckleyGolder, I. and Fukunaga, O. and Glass, J. T. and Kamo, M., Preface to the proceedings of the 7th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '96), Tours, France, September 8-13, 1996, Diamond and Related Materials, vol. 6 no. 2-4 (March, 1997), pp. R11--R11 .
  49. Glass, J.T. and McCann, J.F. and Crothers, D.S.F. and Momberger, K., Radiative electron capture by relativistic heavy ions, Proceedings of the Royal Society of London, Series A: Mathematical, Physical and Engineering Sciences, vol. 453 no. 1957 (1997), pp. 387 - 402 [0022] .
  50. Bachmann, P. K. and BuckleyGolder, I. and Glass, J. T. and Kamo, M., Preface to the Proceedings of the 6th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '95), Barcelona, Spain, September 10-15, 1995, Diamond and Related Materials, vol. 5 no. 3-5 (April, 1996), pp. R15--R15 .
  51. Yang, P.C. and Liu, W. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., Nucleation and growth of oriented diamond films on nickel substrates, Materials Research Society Symposium - Proceedings, vol. 423 (1996), pp. 281 - 286  [abs].
  52. Goeller, P.T. and Wang, Z. and Sayers, D.E. and Glass, J.T. and Nemanich, R.J., Epitaxial films of cobalt disilicide (100) evaporated onto Si (100) from a mixed source, Silicide Thin Films - Fabrication, Properties, and Applications. Symposium (1996), pp. 511 - 16  [abs].
  53. Liu, W. and Yang, P.C. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates, III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium (1996), pp. 457 - 62  [abs].
  54. Yang, P. C. and Liu, W. and Tucker, D. A. and Wolden, C. A. and Davis, R. F. and Glass, J. T. and Prater, J. T. and Sitar, Z. and Gaskill, D. K. and Brandt, C. D. and Nemanich, R. J., Iii-Nitride, Sic and Diamond Materials For Electronic Devices, vol. 423 (1996), pp. 281--286 .
  55. Liu, W. and Yang, P. C. and Tucker, D. A. and Wolden, C. A. and Davis, R. F. and Glass, J. T. and Prater, J. T. and Sitar, Z. and Gaskill, D. K. and Brandt, C. D. and Nemanich, R. J., Iii-Nitride, Sic and Diamond Materials For Electronic Devices, vol. 423 (1996), pp. 457--462 .
  56. Yang, P. C. and Liu, W. and Tucker, D. A. and Wolden, C. A. and Davis, R. F. and Glass, J. T. and Prater, J. T. and Sitar, Z., Iii-Nitride, Sic and Diamond Materials for Electronic Devices, Materials Research Society Conference Proceedings, edited by Gaskill, D. K. and Brandt, C. D. and Nemanich, R. J., vol. 423 (1996), pp. 281--286 .
  57. Goeller, P. T. and Wang, Z. and Sayers, D. E. and Glass, J. T. and Nemanich, R. J. and Tung, R. T. and Maex, K. and Pellegrini, P. W. and Allen, L. H., Silicide Thin Films - Fabrication, Properties, and Applications, vol. 402 (1996), pp. 511--516 .
  58. MORRISON, PW and SOMASHEKHAR, A. and GLASS, JT and PRATER, JT, GROWTH OF DIAMOND FILMS USING AN ENCLOSED COMBUSTION-FLAME, Journal of Applied Physics, vol. 78 no. 6 (September, 1995), pp. 4144--4156 .
  59. LIU, W. and TUCKER, DA and YANG, PC and GLASS, JT, NUCLEATION OF ORIENTED DIAMOND PARTICLES ON COBALT SUBSTRATES, Journal of Applied Physics, vol. 78 no. 2 (July, 1995), pp. 1291--1296 [1.360768] .
  60. TUCKER, DA and SEO, DK and WHANGBO, MH and SIVAZLIAN, FR and STONER, BR and BOZEMAN, SP and SOWERS, AT and NEMANICH, RJ and GLASS, JT, COMPARISON OF SILICON, NICKEL, AND NICKEL SILICIDE (NI3SI) AS SUBSTRATES FOR EPITAXIAL DIAMOND GROWTH, Surface Science, vol. 334 no. 1-3 (July, 1995), pp. 179--194 .
  61. WOLTER, SD and GLASS, JT and STONER, BR, INVESTIGATION OF THE PROCESS FACTOR SPACE ON BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON, Thin Solid Films, vol. 261 no. 1-2 (June, 1995), pp. 4--11 [0040-6090(94)06432-6]  [abs].
  62. ZHU, W. and YANG, PC and GLASS, JT and AREZZO, F., DIAMOND NUCLEATION AND GROWTH ON REACTIVE TRANSITION-METAL SUBSTRATES, Journal of Materials Research, vol. 10 no. 6 (June, 1995), pp. 1455--1460  [abs].
  63. Bozeman, S. P. and Tucker, D. A. and Stoner, B. R. and Glass, J. T. and Hooke, W. M., DIAMOND DEPOSITION USING A PLANAR RADIO-FREQUENCY INDUCTIVELY-COUPLED PLASMA, Applied Physics Letters, vol. 66 no. 26 (June, 1995), pp. 3579--3581 .
  64. WOLTER, SD and MCCLURE, MT and GLASS, JT and STONER, BR, BIAS-ENHANCED NUCLEATION OF HIGHLY ORIENTED DIAMOND ON TITANIUM CARBIDE (111) SUBSTRATES, Applied Physics Letters, vol. 66 no. 21 (May, 1995), pp. 2810--2812 [1.113483] .
  65. WOLTER, SD and GLASS, JT and STONER, BR, BIAS INDUCED DIAMOND NUCLEATION STUDIES ON REFRACTORY-METAL SUBSTRATES, Journal of Applied Physics, vol. 77 no. 10 (May, 1995), pp. 5119--5124 .
  66. BACHMANN, PK and BUCKLEYGOLDER, IM and GLASS, JT and KAMO, M., PREFACE TO THE PROCEEDINGS OF THE 5TH EUROPEAN CONFERENCE ON DIAMOND, DIAMOND-LIKE AND RELATED MATERIALS (DIAMOND-FILMS-94), IL-CIOCCO, ITALY, SEPTEMBER 25-30, 1994, Diamond and Related Materials, vol. 4 no. 4 (April, 1995), pp. R15--R15 .
  67. LIU, J. and ZHIRNOV, VV and MYERS, AF and WOJAK, GJ and CHOI, WB and HREN, JJ and WOLTER, SD and MCCLURE, MT and STONER, BR and GLASS, JT, FIELD-EMISSION CHARACTERISTICS OF DIAMOND-COATED SILICON FIELD EMITTERS, Journal of Vacuum Science & Technology B, vol. 13 no. 2 (March, 1995), pp. 422--426 .
  68. ZHU, W. and SIVAZLIAN, FR and STONER, BR and GLASS, JT, NUCLEATION AND SELECTED-AREA DEPOSITION OF DIAMOND BY BIASED HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Journal of Materials Research, vol. 10 no. 2 (February, 1995), pp. 425--430 .
  69. Liu, J. and Zhirnov, V.V. and Myers, A.F. and Wojak, G.J. and Choi, W.B. and Hren, J.J. and Wolter, S.D. and McClure, M.T. and Stoner, B.R. and Glass, J.T., Field emission characteristics of diamond coated silicon field emitters, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 13 no. 2 (1995), pp. 422 - 426 [1.587961]  [abs].
  70. McClure, M.T. and Wolter, S.D. and Glass, J.T. and Stoner, B.R., Titanium as a potential heteroepitaxial substrate for diamond, Proceedings of the Fourth International Symposium on Diamond Materials (1995), pp. 124 - 9  [abs].
  71. Tucker, D.A. and Seo, D.-K. and Whangbo, M.-H. and Sivazlian, F.R. and Stoner, B.R. and Bozeman, S.P. and Sowers, A.T. and Nemanich, R.J. and Glass, J.T., Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth, Surface Science, vol. 334 no. 1-3 (1995), pp. 179 - 194 [0039-6028(95)00469-6]  [abs].
  72. Morrison, Philip W. Jr. and Somashekhar, Ambika and Glass, Jeffrey T. and Prater, John T., Growth of diamond films using an enclosed combustion flame, Journal of Applied Physics, vol. 78 no. 6 (1995), pp. 4144 - [1.359874] .
  73. Bozeman, S.P. and Tucker, D.A. and Stoner, B.R. and Glass, J.T. and Hooke, W.M., Diamond deposition using a planar radio frequency inductively coupled plasma, Applied Physics Letters, vol. 66 no. 26 (1995), pp. 3579 - [1.113793] .
  74. Zhu, W. and Sivazlian, F.R. and Stoner, B.R. and Glass, J.T., Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition, Journal of Materials Research, vol. 10 no. 2 (1995), pp. 425 - 430  [abs].
  75. LIU, J. and ZHIRNOV, VV and MYERS, AF and WOJAK, GJ and CHOI, WB and HREN, JJ and WOLTER, SD and MCCLURE, MT and GLASS, JT and VIDE, SOC FRANCAISE, DIAMOND-COATED SILICON FIELD EMITTERS, Ivmc 94 - 7th International Vacuum Microelectronics Conference (1994), pp. 104--107 .
  76. LIU, J. and ZHIRNOV, VV and WOJAK, GJ and MYERS, AF and CHOI, WB and HREN, JJ and WOLTER, SD and MCCLURE, MT and STONER, BR and GLASS, JT, ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS, Applied Physics Letters, vol. 65 no. 22 (November, 1994), pp. 2842--2844 .
  77. SIVAZLIAN, FR and GLASS, JT and STONER, BR, INVESTIGATION OF THE LOW-ANGLE GRAIN-BOUNDARIES IN HIGHLY ORIENTED DIAMOND FILMS VIA TRANSMISSION ELECTRON-MICROSCOPY, Journal of Materials Research, vol. 9 no. 10 (October, 1994), pp. 2487--2489 .
  78. Bergman, L. and McClure, M. T. and Glass, J. T. and Nemanich, R. J., THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS, Journal of Applied Physics, vol. 76 no. 5 (September, 1994), pp. 3020--3027 .
  79. YANG, PC and ZHU, W. and GLASS, JT, DIAMOND NUCLEATION ON NICKEL SUBSTRATES SEEDED WITH NON-DIAMOND CARBON, Journal of Materials Research, vol. 9 no. 5 (May, 1994), pp. 1063--1066  [abs].
  80. BACHMANN, PK and BUCKLEYGOLDER, I. and GLASS, JT and KAMO, M., PREFACE TO THE PROCEEDINGS OF THE 4TH EUROPEAN CONFERENCE ON DIAMOND, DIAMOND-LIKE AND RELATED MATERIALS (DIAMOND FILMS 93), ALBUFEIRA, PORTUGAL, SEPTEMBER 20-24, 1993, Diamond and Related Materials, vol. 3 no. 4-6 (April, 1994), pp. R15--R15 .
  81. Liu, J. and Zhirnov, V.V. and Wojak, G.J. and Myers, A.F. and Choi, W.B. and Hren, J.J. and Wolter, S.D. and McClure, M.T. and Stoner, B.R. and Glass, J.T., Electron emission from diamond coated silicon field emitters, Appl. Phys. Lett. (USA), vol. 65 no. 22 (1994), pp. 2842 - 4 [1.112538]  [abs].
  82. Proceedings of the 4th European Conference on Diamond, Diamond-Like and Related Materials, edited by Bachmann, Peter K.;Buckley-Golder, Ian M.;Glass, Jeffrey T.;Kamo, Mutzukazu;, Diamond and Related Materials, vol. 3 no. 4-6 (1994), pp. -  [abs].
  83. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Recombination processes of the broadband and 1.681 eV optical centers in diamond films, Diamond, SiC and Nitride Wide Bandgap Semiconductors. Symposium (1994), pp. 663 - 8  [abs].
  84. McClure, Michael T. and von Windheim, Josko A. and Glass, Jeffrey T. and Prater, John T., Effect of native SiO2 layer on the nucleation of diamond using a combustion flame, Diamond and Related Materials, vol. 3 no. 3 (1994), pp. 239 - 244 [0925-9635(94)90086-8]  [abs].
  85. Wolter, S.D. and Stoner, B.R. and Yang, P.C. and Lui, W. and Glass, J.T., Diamond nucleation studies on refractory metals and nickel, Materials Research Society Symposium - Proceedings, vol. 339 (1994), pp. 291 - 296  [abs].
  86. Morrison, P.W., Jr. and Somashekhar, A. and Glass, J.T. and Prater, J.T., Nucleation enhancement and growth of diamond films using an enclosed combustion flame, Novel Forms of Carbon II Symposium, vol. Vol. 349 (1994), pp. 403 - 4088  [abs].
  87. Wolter, S.D. and Stoner, B.R. and Glass, J.T., Effect of substrate material on bias-enhanced diamond nucleation, Diamond and Related Materials, vol. 3 no. 9 (1994), pp. 1188 - 1195 [0925-9635(94)90167-8]  [abs].
  88. Sivazlian, F.R. and Glass, J.T. and Stoner, B.R., Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy, Journal of Materials Research, vol. 9 no. 10 (1994), pp. 2487 - 2489  [abs].
  89. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films, Journal of Applied Physics, vol. 76 no. 5 (1994), pp. 3020 - 3027 [1.357508]  [abs].
  90. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Recombination processes of the broadband and 1.681 eV optical centers in diamond films, Materials Research Society Symposium - Proceedings, vol. 339 (1994), pp. 663 - 668  [abs].
  91. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Relativistic continuum distorted wave theory for electron capture, Journal of Physics B: Atomic, Molecular and Optical Physics, vol. 27 no. 15 (1994), pp. 3445 - [020] .
  92. BERGMAN, L. and MCCLURE, MT and GLASS, JT and NEMANICH, RJ and Carter, C. H. and Gildenblat, G. and Nakamura, S., Diamond, Sic and Nitride Wide Bandgap Semiconductors, vol. 339 (1994), pp. 663--668 .
  93. WOLTER, SD and STONER, BR and YANG, PC and LUI, W. and GLASS, JT and Carter, C. H. and Gildenblat, G. and Nakamura, S. and Nemanich, R. J., Diamond, Sic and Nitride Wide Bandgap Semiconductors, vol. 339 (1994), pp. 291--296 .
  94. MORRISON, PW and SOMASHEKHAR, A. and GLASS, JT and PRATER, JT and Renschler, C. L. and Cox, D. M. and Pouch, J. J. and Achiba, Y., Novel Forms of Carbon Ii, vol. 349 (1994), pp. 403--408 .
  95. Zhu, W. and Yang, P. C. and Glass, J. T., ORIENTED DIAMOND FILMS GROWN ON NICKEL SUBSTRATES, Applied Physics Letters, vol. 63 no. 12 (September, 1993), pp. 1640--1642 .
  96. Yang, P. C. and Zhu, W. and Glass, J. T., NUCLEATION OF ORIENTED DIAMOND FILMS ON NICKEL SUBSTRATES, Journal of Materials Research, vol. 8 no. 8 (August, 1993), pp. 1773--1776  [abs].
  97. Bade, J. P. and Sahaida, S. R. and Stoner, B. R. and Vonwindheim, J. A. and Glass, J. T. and Miyata, K. and Nishimura, K. and Kobashi, K., FABRICATION OF DIAMOND THIN-FILM THERMISTORS FOR HIGH-TEMPERATURE APPLICATIONS, Diamond and Related Materials, vol. 2 no. 5-7 (April, 1993), pp. 816--819  [abs].
  98. WANG, XH and ZHU, W. and VONWINDHEIM, J. and GLASS, JT, COMBUSTION GROWTH OF LARGE DIAMOND CRYSTALS, Journal of Crystal Growth, vol. 129 no. 1-2 (March, 1993), pp. 45--55 [0022-0248(93)90432-V]  [abs].
  99. VONWINDHEIM, JA and SIVAZLIAN, F. and MCCLURE, MT and GLASS, JT and PRATER, JT, NUCLEATION AND GROWTH OF DIAMOND USING A COMPUTER-CONTROLLED OXY-ACETYLENE TORCH, Diamond and Related Materials, vol. 2 no. 2-4 (March, 1993), pp. 438--442 [0925-9635(93)90097-L]  [abs].
  100. Tachibana, T. and Glass, J. T. and Thompson, D. G., TITANIUM CARBIDE RECTIFYING CONTACTS ON BORON-DOPED POLYCRYSTALLINE DIAMOND, Diamond and Related Materials, vol. 2 no. 1 (February, 1993), pp. 37--40  [abs].
  101. TACHIBANA, T. and GLASS, JT and NEMANICH, RJ, EFFECT OF SURFACE HYDROGEN ON METAL-DIAMOND INTERFACE PROPERTIES, Journal of Applied Physics, vol. 73 no. 2 (January, 1993), pp. 835--842 [1.353322] .
  102. Zhu, W. and Wang, X.H. and Stoner, B.R. and Kong, H.S. and Braun, M.W.H. and Glass, J.T., Geometric modeling of the diamond-β-SiC heteroepitaxial interface, Diamond and Related Materials, vol. 2 no. 2-4 pt 1 (1993), pp. 590 - 596 [0925-9635(93)90127-N]  [abs].
  103. Tachibana, T. and Glass, J.T., Correlation of interface chemistry to electrical properties of metal contacts on diamond, Diamond and Related Materials, vol. 2 no. 5-7 pt 2 (1993), pp. 963 - 969 [0925-9635(93)90259-5]  [abs].
  104. Stoner, B.R. and Ma, G.H. and Wolter, S.D. and Zhu, W. and Wang, Y.-C. and Davis, R.F. and Glass, J.T., Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol. 2 no. 2-4 pt 1 (1993), pp. 142 - 146 [0925-9635(93)90045-4]  [abs].
  105. Bergman, L. and Stoner, B.R. and Turner, K.F. and Glass, J.T. and Nemanich, R.J., Microphotoluminescence and Raman scattering study of defect formation in diamond films, J. Appl. Phys. (USA), vol. 73 no. 8 (1993), pp. 3951 - 7 [1.352858]  [abs].
  106. Zhu, W. and Wang, X.H. and Stoner, B.R. and Ma, G.H.M. and Kong, H.S. and Braun, M.W.H. and Glass, J.T., Diamond and β-SiC heteroepitaxial interfaces: a theoretical and experimental study, Phys. Rev. B, Condens. Matter (USA), vol. 47 no. 11 (1993), pp. 6529 - 42 [6529]  [abs].
  107. Wolter, S.D. and Stoner, B.R. and Glass, J.T. and Ellis, P.J. and Buhaenko, D.S. and Jenkins, C.E. and Southworth, P., Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation, Appl. Phys. Lett. (USA), vol. 62 no. 11 (1993), pp. 1215 - 17 [1.108738]  [abs].
  108. TACHIBANA, T. and GLASS, JT, EFFECTS OF ARGON PRESPUTTERING ON THE FORMATION OF ALUMINUM CONTACTS ON POLYCRYSTALLINE DIAMOND, Journal of Applied Physics, vol. 72 no. 12 (December, 1992), pp. 5912--5918 [1.351899] .
  109. Stoner, B. R. and Glass, J. T., TEXTURED DIAMOND GROWTH ON (100) BETA-SIC VIA MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION, Applied Physics Letters, vol. 60 no. 6 (February, 1992), pp. 698--700 .
  110. Stoner, B. R. and Williams, B. E. and Wolter, S. D. and Nishimura, K. and Glass, J. T., INSITU GROWTH-RATE MEASUREMENT AND NUCLEATION ENHANCEMENT FOR MICROWAVE PLASMA CVD OF DIAMOND, Journal of Materials Research, vol. 7 no. 2 (February, 1992), pp. 257--260 .
  111. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Electron capture at semirelativistic energies: distorted wave models, J. Phys. B, At. Mol. Opt. Phys. (UK), vol. 25 no. 21 (1992), pp. 541 - 4 [004]  [abs].
  112. McClure, M.T. and von Windheim, J.A. and Glass, J.T. and Prater, J.T., Early nucleation of diamond in a combustion flame, Novel Forms of Carbon Symposium (1992), pp. 323 - 8  [abs].
  113. Das, K. and Venkatesan, V. and Miyata, K. and Dreifus, D.L. and Glass, J.T., Review of the electrical characteristics of metal contacts on diamond, Thin Solid Films, vol. 212 no. 1-2 (1992), pp. 19 - 24 [0040-6090(92)90494-V]  [abs].
  114. Sivazlian, F.R. and von Windheim, J.A. and Glass, J.T., Diamond growth in an oxy-acetylene flame by an alternating gas ratio technique, Novel Forms of Carbon Symposium (1992), pp. 329 - 34  [abs].
  115. Williams, Brad, E. and Glass, Jeffrey, T. and Davis, Robert, F., Defect and interface structures of diamond thin films, R&D, Research and Development (Kobe Steel, Ltd), vol. 42 no. 2 (1992), pp. 13 - 16  [abs].
  116. Wolter, S.D. and Stoner, B.R. and Ma, G.-H.M. and Glass, J.T., In-vacuo surface analytical study of diamond nucleation on copper vs. silicon, Novel Forms of Carbon Symposium (1992), pp. 347 - 52  [abs].
  117. Stoner, B.R. and Glass, J.T. and Bergman, L. and Nemanich, R.J. and Zoltal, L.D. and Vandersande, J.W., Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, Journal of Electronic Materials, vol. 21 no. 6 (1992), pp. 0 -  [abs].
  118. Stoner, B.R. and Williams, B.E. and Wolter, S.D. and Nishimura, K. and Glass, J.T., In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond, Journal of Materials Research, vol. 7 no. 2 (1992), pp. 257 - 260  [abs].
  119. von Windheim, Jesko A. and Glass, Jeffrey T., Improved uniformity and selected area deposition of diamond by the oxy-acetylene flame method, Journal of Materials Research, vol. 7 no. 8 (1992), pp. 2144 - 2150  [abs].
  120. Fenner, D.B. and Li, Q. and Morrison, P.W. and Cosgrove, J. and Lynds, L. and Johansson, M.E. and Stoner, B.R. and Glass, J.T. and Xu, P. and Zhang, H., Pulsed laser deposition of CdTe, HgCdTe, and β-SiC thin films on silicon, Materials Modification by Energetic Atoms and Ions Symposium (1992), pp. 235 - 40  [abs].
  121. Stoner, B.R. and Glass, J.T., Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition, Applied Physics Letters, vol. 60 no. 6 (1992), pp. 698 - [1.106541] .
  122. Angus, John C. and Sunkara, Mahendra and Sahaida, Scott R. and Glass, Jeffrey T., Twinning and faceting in early stages of diamond growth by chemical vapor deposition, Journal of Materials Research, vol. 7 no. 11 (1992), pp. 3001 - 3009  [abs].
  123. Stoner, B.R. and von Windheim, J.A. and Glass, J.T. and Zoltan, D. and Vandersande, J.W., Electrical conductivity as a function of temperature of diamond films grown by downstream microwave plasma chemical vapor deposition, Novel Forms of Carbon Symposium (1992), pp. 413 - 18  [abs].
  124. FENNER, DB and LI, Q. and MORRISON, PW and COSGROVE, J. and LYNDS, L. and JOHANSSON, ME and STONER, BR and GLASS, JT and XU, PR and ZHANG, H. and GRABOWSKI, KS and BARNETT, SA and ROSSNAGEL, SM and WASA, K., Materials Modification By Energetic Atoms and Ions, vol. 268 (1992), pp. 235--240 .
  125. STONER, BR and VONWINDHEIM, JA and GLASS, JT and Renschler, C. L. and Pouch, J. J. and Cox, D. M., Novel Forms of Carbon, vol. 270 (1992), pp. 413--418 .
  126. SIVAZLIAN, FR and VONWINDHEIM, JA and GLASS, JT and Renschler, C. L. and Pouch, J. J. and Cox, D. M., Novel Forms of Carbon, vol. 270 (1992), pp. 329--334 .
  127. MCCLURE, MT and VONWINDHEIM, JA and GLASS, JT and PRATER, JT and Renschler, C. L. and Pouch, J. J. and Cox, D. M., Novel Forms of Carbon, vol. 270 (1992), pp. 323--328 .
  128. WOLTER, SD and STONER, BR and MA, GHM and GLASS, JT and Renschler, C. L. and Pouch, J. J. and Cox, D. M., Novel Forms of Carbon, vol. 270 (1992), pp. 347--352 .
  129. Wolter, S. D. and Stoner, B. R. and Ma, G. H. M. and Glass, J. T., Novel Forms of Carbon, Materials Research Society Symposium Proceedings, edited by Renschler, C. L. and Pouch, J. J. and Cox, D. M., vol. 270 (1992), pp. 347--352 .
  130. Stoner, B.R. and Glass, J.T. and Bergman, L. and Nemanich, R.J. and Zoltal, L.D. and Vandersande, J.W., Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, J. Electron. Mater. (USA), vol. 21 no. 6 (1992), pp. 629 - 34  [abs].
  131. Tachibana, T. and Williams, B.E. and Glass, J.T., Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. I. Gold contacts: a non-carbide-forming metal, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 20 (1992), pp. 11968 - 74 [PhysRevB.45.11968]  [abs].
  132. Tachibana, T. and Williams, B.E. and Glass, J.T., Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: a carbide-forming metal, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 20 (1992), pp. 11975 - 81 [PhysRevB.45.11975]  [abs].
  133. Stoner, B.R. and Ma, G.-H.M. and Wolter, S.D. and Glass, J.T., Characterization of bias-enhanced nucleation of diamond on silicon by in vacuo surface analysis and transmission electron microscopy, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 19 (1992), pp. 11067 - 84 [PhysRevB.45.11067]  [abs].
  134. Wang, X.H. and Ma, G.-H.M. and Wei Zhu and Glass, J.T. and Bergman, L. and Turner, K.F. and Nemanich, R.J., Effects of boron doping on the surface morphology and structural imperfections of diamond films, Diam. Relat. Mater. (Netherlands), vol. 1 no. 7 (1992), pp. 828 - 35 [0925-9635(92)90109-2]  [abs].
  135. Williams, B. E. and Tachibana, T. and Stoner, B. R. and Glass, J. T., SURFACE AND MICROSTRUCTURAL CHARACTERIZATION OF THE NUCLEATION AND GROWTH OF DIAMOND THIN-FILMS, Abstracts of Papers of the American Chemical Society, vol. 202 (August, 1991), pp. 121--PHYS .
  136. Geis, M. W. and Smith, H. I. and Argoitia, A. and Angus, J. and Ma, G. H. M. and Glass, J. T. and Butler, J. and Robinson, C. J. and Pryor, R., LARGE-AREA MOSAIC DIAMOND FILMS APPROACHING SINGLE-CRYSTAL QUALITY, Applied Physics Letters, vol. 58 no. 22 (June, 1991), pp. 2485--2487  [abs].
  137. Turner, K. F. and Stoner, B. R. and Bergman, L. and Glass, J. T. and Nemanich, R. J., OBSERVATION OF SURFACE MODIFICATION AND NUCLEATION DURING DEPOSITION OF DIAMOND ON SILICON BY SCANNING TUNNELING MICROSCOPY, Journal of Applied Physics, vol. 69 no. 9 (May, 1991), pp. 6400--6405  [abs].
  138. Wei, Z. and Stoner, B. R. and Williams, B. E. and Glass, J. T., GROWTH AND CHARACTERIZATION OF DIAMOND FILMS ON NONDIAMOND SUBSTRATES FOR ELECTRONIC APPLICATIONS, Proceedings of the Ieee, vol. 79 no. 5 (May, 1991), pp. 621--646  [abs].
  139. Miyauchi, S. and Kumagai, K. and Miyata, K. and Nishimura, K. and Kobashi, K. and Nakaue, A. and Glass, Jeffrey T. and Buckley-Golder, Ian M., Microfabrication of diamond films. Selective deposition and etching, Surface & Coatings Technology, vol. 47 no. 1-3 (1991), pp. 465 - 473 [0257-8972(91)90312-K]  [abs].
  140. Proceedings of the Second International Conference. New Diamond Science and Technology, edited by Messier, R.;Glass, J.T.;Butler, J.E.;Roy, R.; (1991), pp. xx+1128 -  [abs].
  141. Ma, G.-H. M. and Williams, B.E. and Glass, J.T. and Prater, J.T., Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase, Diamond and Related Materials, vol. 1 no. 1 (1991), pp. 25 - 32 [0925-9635(91)90008-X]  [abs].
  142. Das, K. and Venkatesan, V. and Miyata, K. and Dreifus, D.L. and Glass, J.T., Review of the electrical characteristics of metal contacts on diamond, Materials Science Monographs, vol. 73 (1991), pp. 301 - .
  143. Williams, B. E. and Stoner, B. R. and Asbury, D. A. and Glass, J. T., Diamond and Diamond-Like Films and Coatings, Nato Advanced Science Institutes Series, Series B, Physics, edited by Clausing, R. E. and Horton, L. L. and Angus, J. C. and Koidl, P., vol. 266 (1991), pp. 737--744 .
  144. Turner, K. F. and Stoner, B. R. and Bergman, L. and Glass, J. T. and Nemanich, R. J., New Diamond Science and Technology, Materials Research Society Conference Proceedings, edited by Messier, R. and Glass, J. T. and Butler, J. E. and Roy, R. (1991), pp. 607--612 .
  145. Turner, K.F. and LeGrice, Y.M. and Stoner, B.R. and Glass, J.T. and Nemanich, R.J., Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 9 no. 2 (1991), pp. 914 - 19 [1.585494]  [abs].
  146. Nishimura, K. and Das, K. and Glass, J.T., Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition, J. Appl. Phys. (USA), vol. 69 no. 5 (1991), pp. 3142 - 8 [1.348582]  [abs].
  147. Braun, M.W.H. and Kong, H.S. and Glass, J.T. and Davis, R.F., The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system, J. Appl. Phys. (USA), vol. 69 no. 4 (1991), pp. 2679 - 81 [1.348663]  [abs].
  148. Murphy, J. and Glass, J. T. and Majerowicz, S. and Green, R. E., LASER INTERFEROMETRIC PROBE FOR DETECTION OF ACOUSTIC-EMISSION, Materials Evaluation, vol. 48 no. 6 (June, 1990), pp. 714--720 .
  149. More, K. L. and Kong, H. S. and Glass, J. T. and Davis, R. F., ELECTRON-MICROSCOPY OF DEFECTS IN EPITAXIAL BETA-SIC THIN-FILMS GROWN ON SILICON AND CARBON 0001 FACES OF ALPHA-SIC SUBSTRATES, Journal of the American Ceramic Society, vol. 73 no. 5 (May, 1990), pp. 1283--1288 .
  150. Wang, Y. C. and Kong, H. S. and Glass, J. T. and Davis, R. F. and More, K. L., EFFECT OF SUBSTRATE ORIENTATION ON INTERFACIAL AND BULK CHARACTER OF CHEMICALLY VAPOR-DEPOSITED MONOCRYSTALLINE SILICON-CARBIDE THIN-FILMS, Journal of the American Ceramic Society, vol. 73 no. 5 (May, 1990), pp. 1289--1296 .
  151. Williams, B. E. and Kong, H. S. and Glass, J. T., ELECTRON-MICROSCOPY OF VAPOR-PHASE DEPOSITED DIAMOND, Journal of Materials Research, vol. 5 no. 4 (April, 1990), pp. 801--810 .
  152. Lee, Y. H. and Richard, P. D. and Bachmann, K. J. and Glass, J. T., BIAS-CONTROLLED CHEMICAL VAPOR-DEPOSITION OF DIAMOND THIN-FILMS, Applied Physics Letters, vol. 56 no. 7 (February, 1990), pp. 620--622 .
  153. Shroder, R. E. and Nemanich, R. J. and Glass, J. T., ANALYSIS OF THE COMPOSITE STRUCTURES IN DIAMOND THIN-FILMS BY RAMAN-SPECTROSCOPY, Physical Review B, vol. 41 no. 6 (February, 1990), pp. 3738--3745 .
  154. Lee, Y.H. and Bachmann, K.J. and Glass, J.T. and LeGrice, Y.M. and Nemanich, R.J., Vapor deposition of diamond thin films on various substrates, Appl. Phys. Lett. (USA), vol. 57 no. 18 (1990), pp. 1916 - 18 [1.104011]  [abs].
  155. Yu, Cheng Wang and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F. and More, Karren L., Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films, Journal of the American Ceramic Society, vol. 73 no. 5 (1990), pp. 1289 - 1296  [abs].
  156. Kobashi, K. and Nakaue, A. and Glass, J. T. and Buckleygolder, I. M., PROPERTIES AND APPLICATIONS OF VAPOR GROWN DIAMOND, Carbon, vol. 28 no. 6 (1990), pp. 756--757  [abs].
  157. Williams, B.E. and Glass, J.T. and Davis, Robert F. and Kobashi, K., Analysis of defect structures and substrate/film interfaces of diamond thin films, Journal of Crystal Growth, vol. 99 no. 1-4 pt 2 (1990), pp. 1168 - 1176  [abs].
  158. Ma, G.-H.M. and Lee, Y.H. and Glass, J.T., Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor deposition, Journal of Materials Research, vol. 5 no. 11 (1990), pp. 2367 - 2377  [abs].
  159. Buckleygolder, I. M. and Chalker, P. R. and Glass, J. T. and Kobashi, K. and Nakaue, A., DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS, Carbon, vol. 28 no. 6 (1990), pp. 801--801  [abs].
  160. More, Karren L. and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F., Electron microscopy of defects in epitaxical β-SiC thin films grown on silicon and carbon 0001 faces of α-SiC substrates, Journal of the American Ceramic Society, vol. 73 no. 5 (1990), pp. 1283 - 1288  [abs].
  161. Williams, B.E. and Kong, H.S. and Glass, J.T., Electron microscopy of vapor phase deposited diamond, Journal of Materials Research, vol. 5 no. 4 (1990), pp. 801 - 810  [abs].
  162. Lee, Y. H. and Ma, G. H. and Bachmann, K. J. and Glass, J. T., Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Materials Research Society Symposium Proceedings, edited by Glass, J. T. and Messier, R. and Fujimori, N., vol. 162 (1990), pp. 119--125 .
  163. Nishimura, K. and Das, K. and Iwase, M. and Glass, J. T. and Kobashi, K., Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Materials Research Society Symposium Proceedings, edited by Glass, J. T. and Messier, R. and Fujimori, N., vol. 162 (1990), pp. 341--346 .
  164. Legrice, Y. M. and Nemanich, R. J. and Glass, J. T. and Lee, Y. H. and Rudder, R. A. and Markunas, R. J., Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Materials Research Society Symposium Proceedings, edited by Glass, J. T. and Messier, R. and Fujimori, N., vol. 162 (1990), pp. 219--224 .
  165. Legrice, Y. M. and Buehler, E. C. and Nemanich, R. J. and Glass, J. T. and Kobashi, K. and Jansen, F. and Machonkin, M. A. and Tsai, C. C., Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Materials Research Society Symposium Proceedings, edited by Glass, J. T. and Messier, R. and Fujimori, N., vol. 162 (1990), pp. 267--272 .
  166. Nishimura, K. and Das, K. and Glass, J. T. and Kobashi, K. and Nemanich, R. J., Physics and Chemistry of Carbides, Nitrides and Borides, Nato Advanced Science Institutes Series, Series E, Applied Sciences, edited by Freer, R., vol. 185 (1990), pp. 183--194 .
  167. Williams, B. E. and Asbury, D. A. and Glass, J. T., Physics and Chemistry of Carbides, Nitrides and Borides, Nato Advanced Science Institutes Series, Series E, Applied Sciences, edited by Freer, R., vol. 185 (1990), pp. 169--181 .
  168. Shroder, R.E. and Nemanich, R.J. and Glass, J.T., Analysis of the composite structures in diamond thin films by Raman spectroscopy, Phys. Rev. B, Condens. Matter (USA), vol. 41 no. 6 (1990), pp. 3738 - 45 [3738]  [abs].
  169. Lee, Y.H. and Richard, P.D. and Bachmann, K.J. and Glass, J.T., Bias-controlled chemical vapor deposition of diamond thin films, Appl. Phys. Lett. (USA), vol. 56 no. 7 (1990), pp. 620 - 2 [1.102716]  [abs].
  170. Glass, J. T. and Cahen, G. L. and Stoner, G. E., THE EFFECT OF PHOSPHORIC-ACID CONCENTRATION ON ELECTROCATALYSIS, Journal of the Electrochemical Society, vol. 136 no. 3 (March, 1989), pp. 656--660 .
  171. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., Effect of phosphoric acid concentration on electrocatalysis, Journal of the Electrochemical Society, vol. 136 no. 3 (1989), pp. 656 - 660  [abs].
  172. Kong, H.S. and Edmond, J.A. and Palmour, J.W. and Glass, J.T. and Davis, R.F., Epitaxial growth, high temperature ion implantation and MOSFET fabrication in monocrystalline β-SiC thin films, Amorphous and Crystalline Silicon Carbide and Related Materials. Proceedings of the First International Conference (1989), pp. 180 - 5  [abs].
  173. Ryu, J. and Kim, H.J. and Glass, J.T. and Davis, R.F., Effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen, Journal of Electronic Materials, vol. 18 no. 2 (1989), pp. 157 - 165  [abs].
  174. Kong, H.S. and Glass, J.T. and Davis, R.F., Growth rate, surface morphology, and defect microstructures of β-SiC films chemically vapor deposited on 6H-SiC substrates, Journal of Materials Research, vol. 4 no. 1 (1989), pp. 204 - 214  [abs].
  175. Williams, B.E. and Glass, J.T. and Davis, R.F. and Kobashi, K. and More, K.L., Microstructural characterization of diamond thin films, Proceedings - The Electrochemical Society, vol. 89 no. 12 (1989), pp. 202 - .
  176. Williams, B.E. and Glass, J.T., Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures, Journal of Materials Research, vol. 4 no. 2 (1989), pp. 373 - 384  [abs].
  177. Kong, H. S. and Jiang, B. L. and Glass, J. T. and Rozgonyi, G. A. and More, K. L., AN EXAMINATION OF DOUBLE POSITIONING BOUNDARIES AND INTERFACE MISFIT IN BETA-SIC FILMS ON ALPHA-SIC SUBSTRATES, Journal of Applied Physics, vol. 63 no. 8 (April, 1988), pp. 2645--2650  [abs].
  178. Bumgarner, John W. and Kong, Hua-Shuang and Kim, Hyeong J. and Palmour, John W. and Edmond, John A. and Glass, Jeffrey T. and Davis Robert F. ,, MONOCRYSTALLINE beta -SIC SEMICONDUCTOR THIN FILMS: EPITAXIAL GROWTH, DOPING, AND FET DEVICE DEVELOPMENT., Proceedings - Electronic Components Conference (1988), pp. 342 - 349 [ECC.1988.12615]  [abs].
  179. Davis, R.F. and Sitar, Z. and Williams, B.E. and Kong, H.S. and Kim, H.J. and Palmour, J.W. and Edmond, J.A. and Ryu, J. and Glass, J.T. and Carter, C.H. Jr., Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide, Materials Science & Engineering B: Solid-State Materials for Advanced Technology, vol. B1 no. 1 (1988), pp. 77 - 104 [0921-5107(88)90032-3]  [abs].
  180. Glass, J.T. and Williams, B.E. and Davis, R.F., Chemical vapor deposition and characterization of diamond films grown via microwave plasma enhanced CVD, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 877 (1988), pp. 56 - 63  [abs].
  181. Edmond, J. A. and Ryu, J. and Glass, J. T. and Davis, R. F., ELECTRICAL CONTACTS TO BETA SILICON CARBIDE THIN FILMS., Journal of the Electrochemical Society, vol. 135 no. 2 (1988), pp. 359 - 362  [abs].
  182. Glass, J.T. and Cahen, G.L., Jr., The electrochemical stability and calculated free energies of PtCr alloys, J. Electrochem. Soc. (USA), vol. 135 no. 7 (1988), pp. 1650 - 8  [abs].
  183. Kong, H.S. and Wang, Y.C. and Glass, J.T. and Davis, R.F., The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films, J. Mater. Res. (USA), vol. 3 no. 3 (1988), pp. 521 - 30  [abs].
  184. Nemanich, R.J. and Glass, J.T. and Lucovsky, G. and Shroder, R.E., Raman scattering characterization of carbon bonding in diamond and diamondlike thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1783 - 7 [1.575297]  [abs].
  185. Kim, H.J. and Kong, H. and Edmond, J.A. and Ryu, J. and Palmour, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1954 - 6 [1.575214]  [abs].
  186. Williams, B.E. and Glass, J.T. and Davis, R.F. and Kobashi, K. and Horiuchi, T., Structural and chemical characterization of diamond films and diamond-substrate interfaces, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1819 - 20 [1.575261]  [abs].
  187. Davis, R. F. and Kim, H. J. and Kong, H. and Edmond, J. A. and Glass, J. T., EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS, Journal of Electronic Materials, vol. 16 no. 4 (July, 1987), pp. A23--A23 .
  188. Kong, H. and Kim, H.J. and Edmond, J.A. and Palmour, J.W. and Ryu, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Growth, doping, device development and characterization of CVD beta-SiC epilayers on Si(100) and alpha-SiC(0001), Novel Refractory Semiconductors Symposium (1987), pp. 223 - 45  [abs].
  189. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PtCr ALLOYS., Journal of the Electrochemical Society, vol. 134 no. 1 (1987), pp. 58 - 65  [abs].
  190. Kong, H.S. and Glass, J.T. and Davis, R.F. and Nutt, S.R., Growth and characterization of chemically vapor deposited beta-SiC epilayers on 6H alpha-SiC substrates, Interfaces, Superlattices, and Thin Films Symposium (1987), pp. 405 - 10  [abs].
  191. Kim, H.J. and Edmond, J.A. and Ryu, J. and Kong, H. and Carter, C.H. Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims, International SAMPE Symposium and Exhibition, vol. 1 (1987), pp. 370 - 381  [abs].
  192. Kong, H.S. and Palmour, J.W. and Glass, J.T. and Davis, R.F., Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition, Appl. Phys. Lett. (USA), vol. 51 no. 6 (1987), pp. 442 - 4 [1.98416]  [abs].
  193. Kong, H. S. and Glass, J. T. and Davis, R. F., EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION, Applied Physics Letters, vol. 49 no. 17 (October, 1986), pp. 1074--1076 .
  194. Glass, J. T. and Cahen, G. L. and Stoner, G. E., DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PTCR ALLOYS, Journal of the Electrochemical Society, vol. 133 no. 3 (March, 1986), pp. C120--C120 .
  195. Kong, H.S. and Glass, J.T. and Davis, R.F., Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition, Appl. Phys. Lett. (USA), vol. 49 no. 17 (1986), pp. 1074 - 6 [1.97479]  [abs].
  196. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES AT PtCr ALLOYS., Proceedings - The Electrochemical Society, vol. 86-10 (1986), pp. 231 - 256  [abs].
  197. Glass, Jeffrey T. and Green, Robert E., ACOUSTIC EMISSION DURING DEFORMATION AND FRACTURE OF THREE NAVAL ALLOY STEELS., Materials Evaluation, vol. 43 no. 7 (1985), pp. 864 - 872  [abs].
  198. Kohl, R. and Wild, C. and Herres, N. and Koidl, P. and Stoner, B.R. and Glass, J.T., Oriented nucleation and growth of diamond films on β-SiC and Si, Appl. Phys. Lett. (USA), vol. 63 no. 13 (27), pp. 1792 - 4 [1.110664]  [abs].
  199. Kong, H.S. and Glass, J.T. and Davis, R.F., Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates, J. Appl. Phys. (USA), vol. 64 no. 5 (1), pp. 2672 - 9 [1.341608]  [abs].