Papers Published

1. Kim, J; Yamamoto, Y; Hogue, HH, Noise-free avalanche multiplication in Si solid state photomultipliers, Applied Physics Letters, vol. 70 no. 21 (1997), pp. 2852-2854, AIP Publishing [1.119022], [doi] .
   (last updated on 2025/04/18)

   Abstract:
   Si solid state photomultipliers utilize impact ionization of shallow impurity donor levels to create an avalanche multiplication when triggered by a photoexcited hole. The distribution of pulse height from a single photon detection event shows narrow dispersion, which implies that the avalanche multiplication process in these devices is inherently noise-free. We have measured the excess noise factor using two different techniques, digital pulse height analysis and analog noise power measurement. The results demonstrate nearly noise-free avalanche multiplication accomplished in these devices. © 1997 American Institute of Physics.

   Keywords:
   avalanche breakdown;elemental semiconductors;impact ionisation;impurity states;photodetectors;photomultipliers;semiconductor device noise;silicon;