Papers Published

1. Mirabedini, M.R. and Goodwin-Johansson, S.H. and Massoud, H.Z., New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. (USA), vol. 65 no. 6 (1994), pp. 728 - 30 [1.113014] .
   (last updated on 2007/04/15)

   Abstract:
   We report the porous nature of electron-beam evaporated silicon on the sidewalls of metal-oxide-semiconductor field-effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFETs with 200-500 Å ultrashallow junctions. Using electron-beam evaporated silicon reduces fabrication complexity, overcomes common problems inherent to elevated source/drain MOSFETs, and yields a self-aligned process

   Keywords:
   electron beam deposition;elemental semiconductors;insulated gate field effect transistors;semiconductor growth;semiconductor thin films;silicon;