Papers Published

1. Kim, Y. and Massoud, H.Z. and Fair, R.B., The effect of annealing ambient on dopant diffusion in silicon during low-temperature processing, J. Electrochem. Soc. (USA), vol. 137 no. 8 (1990), pp. 2599 - 603 .
   (last updated on 2007/04/15)

   Abstract:
   Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF₂, P, and As were implanted at room temperature in (100) silicon through a 140 Å thick layer of SiO₂ with the ion beam normal to the wafer surface, and the implant dose and energy sufficient to amorphize the surface layer. After low-temperature furnace annealing, ion-implanted B, P, and As in Si show a transient enhanced diffusion regime in both inert and oxidizing ambients. It was expected that point-defect generation during the annealing of implant damage would dominate the transient enhanced diffusion process regardless of the ambient. However, deeper P junctions were observed for implants annealed in an oxidizing ambient when the surface oxidation consumed more than 50 Å of Si. The authors propose that stress in the surface layer plays an important role in the diffusion of high-dose P implants. The effect of oxidation is to consume this highly stressed surface layer which can suppress the P diffusion in the tail region. The role of the surface stress layer in P diffusion will be discussed and profile simulations using this model will be presented

   Keywords:
   annealing;elemental semiconductors;ion implantation;oxidation;semiconductor doping;silicon;