Papers Published

1. Massoud, H.Z. and Shiely, J.P. and Shanware, A., Self-consistent MOSFET tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling, Ultrathin SiO₂ and High-K Materials for ULSI Gate Dielectrics. Symposium (1999), pp. 227 - 39 .
   (last updated on 2007/04/15)

   Abstract:
   This paper discusses the simulation needs of deep-submicron MOSFETs beyond the 100 nm technology generation where the tunneling of carriers through the gate dielectric will become a vital issue in device design, optimization, and characterization. We present simulation results of Tunnel-PISCES, a MOSFET device simulator where tunneling in the gate dielectric is implemented in a self-consistent manner with the device equations in the substrate. Simulation results of trends in the gate, substrate, and drain currents with oxide scaling are presented. The drain-current turnaround effect is explained by considering the role of the voltage drop across the polysilicon gate resistance in determining the device gate tunneling conditions

   Keywords:
   elemental semiconductors;MOSFET;semiconductor device models;silicon;tunnelling;