Papers Published

1. Massoud, H.Z. and Plummer, J.D. and Irene, E.A., Thermal oxidation of silicon in dry oxygen: growth-rate enhancement in the thin regime. II. Physical Mechanisms, J. Electrochem. Soc. (USA), vol. 132 no. 11 (1985), pp. 2693 - 700 .
   (last updated on 2007/04/15)

   Abstract:
   For pt.I see ibid., vol.132, p.2685 (1985). In many studies of oxidation kinetics, it has been observed that silicon-dioxide growth in dry oxygen in the thin film regime (<500 Å) is faster than predicted by the linear-parabolic description of the growth of thicker layers. Oxidation-rate enhancement in the thin film regime was studied in the 800°-1000°C range for a variety of substrate orientations, doping densities, and oxygen partial pressures using in situ ellipsometry. The results were reported in pt.I of this paper. In this part, the physical mechanisms previously proposed to explain the rate enhancement are discussed. No single model was found to apply under all experimental conditions. A new understanding of the growth-rate enhancement in the early stages of silicon oxidation in dry oxygen is introduced

   Keywords:
   elemental semiconductors;oxidation;silicon;