Papers Published

1. Manda, M.L. and Shepard, M.L. and Fair, R.B. and Massoud, H.Z., Stress-assisted diffusion of boron and arsenic in silicon, Impurity Diffusion and Gettering in Silicon Symposium (1985), pp. 71 - 6 .
   (last updated on 2007/04/15)

   Abstract:
   The diffusion of B and As in mechanically stressed silicon has been investigated for initial implant doses of 10¹³, 10¹⁴, and 10¹⁵ cm^-2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant enhancement or retardation was observed. This was true even in plastically deformed samples with dislocation densities >1×10⁷ cm^-2. The results are consistent with the multiple charge state vacancy model of impurity diffusion in silicon. The B diffusivity appears to agree with the accepted activation energy of 3.59 eV and pre-exponential of 3.17 cm²/sec for intrinsic B diffusion

   Keywords:
   annealing;arsenic;boron;diffusion in solids;dislocation density;elemental semiconductors;plastic deformation;silicon;