Papers Published

1. Irene, E.A. and Massoud, H.Z. and Tierney, E., Silicon oxidation studies: silicon orientation effects on thermal oxidation, J. Electrochem. Soc. (USA), vol. 133 no. 6 (1986), pp. 1253 - 6 .
   (last updated on 2007/04/15)

   Abstract:
   The initial stage of the thermal oxidation of various crystallographic orientations of silicon ((100), (110), and (111) orientations) reveals a complex rate behavior. This behavior is not understood within the conventional linear-parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative (for all orientations studied) and somewhat quantitative (for (110) and (111) orientations) explanation of the complex substrate orientation effects

   Keywords:
   crystal orientation;elemental semiconductors;oxidation;silicon;viscosity;