Papers Published

1. Proceedings of Third International Symposium on the Physics and Chemistry of Si02 and the Si Si02 Interface (ISBN 1 56677 151 X), edited by Massoud, H.Z.;Poindexter, E.H.;Helms, C.R.; (1996), pp. xv+780 - .
   (last updated on 2007/04/15)

   Abstract:
   The following topics were dealt with: silicon oxidation; Deal-Grove oxidation; hydrogen in SiO₂; diffusion and defects; dielectric technology; interface chemistry; interface structure and dielectric reliability

   Keywords:
   chemical interdiffusion;crystal defects;dielectric thin films;diffusion;interface structure;oxidation;semiconductor device reliability;