Papers Published

1. Mirabedini, M.R. and Goodwin-Johansson, S.H. and Massoud, H.Z., Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon, Electron. Lett. (UK), vol. 33 no. 13 (1997), pp. 1183 - 4 [el:19970776] .
   (last updated on 2007/04/15)

   Abstract:
   A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200 Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances

   Keywords:
   capacitance;electron beam deposition;elemental semiconductors;integrated circuit technology;MOS integrated circuits;MOSFET;silicon;ULSI;