Papers Published

1. Przewlocki, H.M. and Kudla, A. and Brzezinska, D. and Borowicz, L. and Sawicki, Z. and Massoud, H.Z., The lateral distribution of the effective contact potential difference over the gate area of MOS structures, Electron Technology, vol. 35 (2003), pp. 6 - .
   (last updated on 2007/04/15)

   Abstract:
   The lateral distribution of the effective contact potential difference (ECPD), often referred to as the work-function difference Φ_MS, was determined experimentally for the first time over the gate area of a metal-oxide-semiconductor (MOS) structure. The photoelectric method for measuring Φ_MS in MOS devices was modified to characterize the lateral distribution of ECPD. In square MOS gates, it is found that Φ_MS values were highest in the center area of the gate, lower along the gate edges, and lowest at the gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed, in which the experimentally determined Φ_MS(x,y) distributions, are attributed to mechanical stress distributions in MOS structures. Equations are derived allowing calculation of Φ_MS(x,y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions.

   Keywords:
   Gates (transistor);Electric contacts;Stress analysis;Photoelectricity;Electric potential;Capacitors;Mathematical models;