Papers Published

1. Vrazel, Michael and Chang, Jae J. and Brooke, Martin and Jokerst, Nan M. and Dagnall, Georgianna and Brown, April, Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2 (2000), pp. 884 - 885 [LEOS.2000.894138] .
   (last updated on 2007/04/11)

   Abstract:
   An overview is given on the hybrid integration of a thin film large area, low capacitance InGaAsP/InP inverted metal-semiconductor-metal photodetector onto a Si CMOS differential receiver circuit. The integrated receiver has a measured bit-error-rate (BER) of 10^-10 at 0.9 Gbps and 10^-11 at 650 Mbps.

   Keywords:
   Optoelectronic devices;Electronics packaging;Photodetectors;Semiconducting indium phosphide;Semiconductor quantum wells;Semiconducting gallium arsenide;Printed circuit boards;Optical fibers;