Papers Published

1. Thomsen, Axel and Brooke, Martin A., A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process, IEEE Electron Device Letters, vol. 12 no. 3 (1991), pp. 111 - 113 [55.75728] .
   (last updated on 2007/04/11)

   Abstract:
   A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2-μm double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.

   Keywords:
   Electrons - Tunneling;Data Storage, Semiconductor - Fabrication;Data Storage, Digital - PROM;