Papers Published

1. Fair, R.B., High concentration arsenic diffusion in silicon from a doped oxide source, J. Electrochem. Soc. (USA), vol. 119 no. 10 (1972), pp. 1389 - 94 .
   (last updated on 2007/04/17)

   Abstract:
   The properties of As-doped SiO₂ and As-doped Ge/SiO₂ diffusion sources as a function of the O₂ concentration in a horizontal, open-tube deposition chamber are examined

   Keywords:
   arsenic;diffusion in solids;germanium compounds;semiconductor doping;silicon;silicon compounds;