Papers Published

1. Fair, Richard B., Damage removal/dopant diffusion tradeoffs in ultra-shallow implanted p⁺-n junctions, IEEE Transactions on Electron Devices, vol. 37 no. 10 (1990), pp. 2237 - 2242 [16.59914] .
   (last updated on 2007/04/17)

   Abstract:
   The tradeoffs between implant damage annealing and shallow junction formation are investigated. For very-low-energy amorphizing implants the time for damage anneal has a fourth-power dependence on depth below the Si surface. The depth effect depends on the type of amorphizing ion. It is shown that as a result, implanted B in Ge-preamorphized Si diffuses with no detectable self-interstitial supersaturation if the damage is <600 angstrom deep. Conditions for forming defect-free, shallow p⁺-n junctions are described in design curves and comparisons are made between several junction-formation approaches. Implantation of B at energies below 2 keV offers an attractive way of achieving 500-angstrom junctions.

   Keywords:
   Semiconducting Silicon--Doping;Surfaces;Semiconductor Materials--Ion Implantation;