Papers Published

1. Fair, Richard B., Process model for simulating the effect of amorphizing implants on phosphorus diffusion, Proceedings - The Electrochemical Society, vol. 90 no. 7 (1990), pp. 429 - 436 .
   (last updated on 2007/04/17)

   Abstract:
   A model is proposed to account for the effect of end-of-range (EOR) dislocations, produced by amorphizing implants, on the diffusion of phosphorus. It is shown that the location of EOR dislocations relative to the P profile is critical. For high concentration P, the location of EOR damage relative to the kink in the P profile determines the extent of retarded diffusion. EOR damage can also screen portions of the P profile from self-interstitials produced by oxidation of the Si surface or dissolution of self-interstitial clusters in the Si bulk. This model has been put into PREDICT and simulations compared to data with good results.

   Keywords:
   Semiconductor Materials--Ion Implantation;