Papers Published

1. Fair, Richard B., Point defect charge-state effects on transient diffusion of dopants in Si, Journal of the Electrochemical Society, vol. 137 no. 2 (1990), pp. 667 - 671 .
   (last updated on 2007/04/17)

   Abstract:
   Ion implantation damage produces point defects during annealing which can significantly enhance dopant diffusion. This diffusion at low temperatures was studied for P, As, and B implants in Si. Enhanced diffusion was observed below certain doping concentrations which depend only on temperature. A model is presented which correlates the self-interstitial donor level position, E_I⁺, in the Si bandgap with the dominance of B diffusion via neutral self-interstitials. It is shown that when self-interstitials are extremely generated.

   Keywords:
   Crystals--Defects;Semiconductor Materials--Charge Carriers;Diffusion--Transients;