Papers Published

1. Fair, Richard B., Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing, IEEE Electron Device Letters, vol. 20 no. 9 (1999), pp. 466 - 469 [55.784454] .
   (last updated on 2007/04/17)

   Abstract:
   We have observed accelerated diffusion of B in ultrathin gate oxides during rapid thermal annealing (RTA) of the gate stack. Enhanced diffusion by 10-100 times over standard furnace annealing has been measured in SiO₂. The activation energy for B diffusion in SiO₂ during RTA is decreased by about 0.5 eV when compared to furnace annealing results. We propose a model that involves the capture of optically generated holes by diffusion defects which results in reduced B migration enthalpy through the modified defect, whose bonding has been weakened by the presence of captured positive charge. No similar optical radiation effect was observed when F was present in the oxide.

   Keywords:
   Semiconducting boron;Oxides;Rapid thermal annealing;Diffusion in solids;Semiconductor device models;