Papers Published

1. Fair, R.B. and Weber, G.R., Relationship between resistivity and total arsenic concentration in heavily doped n- and p-type silicon, J. Appl. Phys. (USA), vol. 44 no. 1 (1973), pp. 280 - 2 .
   (last updated on 2007/04/17)

   Abstract:
   The authors have proposed a theory for explaining the existence of nonelectrically active As in Si. This theory is applied to derive total As doping vs bulk resistivity curves as a function of diffusion temperature. Experimental data are presented to verify the theoretical curves

   Keywords:
   arsenic;diffusion in solids;electrical conductivity of solids;impurity electron states and effects;silicon;