Papers Published

1. Fair, R.B., Process model for simulating the effect of amorphizing implants on phosphorus diffusion, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 429 - 36 .
   (last updated on 2007/04/17)

   Abstract:
   A model is proposed to account for the effect of end-of-range (EOR) dislocations, produced by amorphizing implants, on the diffusion of phosphorus. It is shown that the location of EOR dislocations relative to the P profile is critical. For high concentration P, the location of EOR damage relative to the kink in the P profile determines the extent of retarded diffusion. EOR damage can also screen portions of the P profile from self-interstitials produced by oxidation of the Si surface or dissolution of self-interstitial clusters in the Si bulk. This model has been put into PREDICT and simulations compared to data with good results

   Keywords:
   amorphisation;diffusion in solids;dislocations;elemental semiconductors;impurity distribution;impurity-dislocation interactions;interstitials;ion implantation;phosphorus;silicon;