Publications [#363610] of Sayan Mukherjee

Papers Published

1. Rahimi, N; Aragon, AA; Romero, OS; Kim, DM; Traynor, NBJ; Rotter, TJ; Balakrishnan, G; Mukherjee, SD; Lester, LF, Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8620 (June, 2013), ISBN 9780819493897 [doi]
   (last updated on 2025/02/21)

   Abstract:
   Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ∼ 1e17 cm-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm2 have been observed. © 2013 Copyright SPIE.