| Publications [#63572] of April S. Brown
Papers Published
- Palmateer, L. F. and Tasker, P. J. and Itoh, T. and Brown, A. S. and Wicks, G. W. and Eastman, L. F., MICROWAVE CHARACTERISATION OF 1 mu m-GATE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As/InP MODFETs.,
Electronics Letters, vol. 23 no. 1
(1987),
pp. 53 - 55
(last updated on 2007/04/14)
Abstract: We report microwave characterisation of nominally 1 mu m-gate Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As MODFETs have room-temperature extrinsic transconductances as high as 250mS/mm. A room-temperature unity-current-gain cutoff frequency (f//T) of 22 GHz and an f//m//a//x of 35 GHz were measured for a 1. 2 mu m-gate MODFET.
Keywords: MICROWAVE DEVICES;SEMICONDUCTING ALUMINUM COMPOUNDS - Applications;SEMICONDUCTING GALLIUM COMPOUNDS - Applications;SEMICONDUCTING INDIUM COMPOUNDS - Applications;
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