| Publications [#63573] of April S. Brown
Papers Published
- Kim, Tong-Ho and Choi, Soojeong and Brown, April S. and Losurdo, Maria and Bruno, Giovanni, Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy,
Applied Physics Letters, vol. 89 no. 2
(2006),
pp. 021916 - [1.2220007]
(last updated on 2007/04/14)
Abstract: GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H-and 6H-SiC(0001)Si substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. © 2006 American Institute of Physics.
Keywords: Gallium nitride;Epitaxial growth;Oxides;Nucleation;Molecular beam epitaxy;
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