Publications [#63600] of April S. Brown

Papers Published

1. Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Thompson, M. and Nguyen, L.D. and Rosenbaum, S.E., Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs, Technical Digest - International Electron Devices Meeting (1989), pp. 101 - 104, Washington, DC, USA [IEDM.1989.74237]
   (last updated on 2007/04/14)

   Abstract:
   A novel self-aligned technique for 0.15-μm-gate-length HEMTs (high electron mobility transistors) has been demonstrated. This technology uses a 0.15-μm-long T-gate structure defined by e-beam lithography with a SiO₂ sidewall to implement the self-aligned scheme. The resultant device has low source and drain resistances, low gate resistance (200 Ω/mm), and a passivating layer over the active channel. Devices with an oxide sidewall yielded an f_T of 177 GHz, whereas devices with no sidewall exhibited an f_T greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO₂.

   Keywords:
   Semiconducting Aluminum Compounds;Semiconducting Gallium Compounds;