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Pratt School of Engineering
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Publications [#150566] of Adrienne D. Stiff-Roberts

Papers Published

  1. Z. Y. Zhao and C. Yi and K. R. Lantz and A. D. Stiff-roberts, Effect of donor-complex-defect-induced dipole field on InAs/GaAs quantum dot infrared photodetector activation energy, Applied Physics Letters, vol. 90 no. 23 (June, 2007), ISSN 0003-6951
    (last updated on 2008/10/16)

    Abstract:
    In order to understand dopant incorporation in quantum dot infrared photodetectors, three quantum dot (QD) Schottky diodes (undoped, delta doped, and modulation doped) have been investigated. Donor-complex-defect (DX) centers have been observed by photocapacitance quenching in the doped diodes only. When the applied bias increases, the doped samples show a rapid increase in dark current and a resulting dramatic decrease in QD activation energy. The activation energy reduction could be related to a dipole field between positively charged DX centers and electrons in QDs. A transport mechanism is proposed to explain the observed activation energy bias dependence in the doped samples. (c) 2007 American Institute of Physics.


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