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| Publications [#66837] of Adrienne D. Stiff-Roberts
Papers Published
- Krishna, S. and Stiff-Roberts, A.D. and Phillips, J.D. and Bhattacharya, P. and Kennerly, S.W., Hot dot detectors,
IEEE Circuits and Devices Magazine, vol. 18 no. 1
(2002),
pp. 14 - 24
(last updated on 2007/04/16)
Abstract: The properties of normal-incidence, high-temperature, mid-wavelength IR, InAs/GaAs vertical QDIPs with and without an Al0.3Ga0.7As current-blocking barrier are discussed. These devices demonstrate very high D* values (D* [similar to] 3 × 109 cmHz1/2/W at T = 100 K and Vbias = 0.2 V) and high operating temperatures (150 K) for normal-incidence vertical QDIPs. The devices are also unique in that their high performance at low bias demonstrates their suitability for incorporation in an FPA that uses commercially available silicon read-out circuits.
Keywords: Infrared detectors;Semiconductor quantum dots;Self assembly;Semiconducting gallium arsenide;Molecular beam epitaxy;Interfacial energy;Luminescence;Atomic force microscopy;Transmission electron microscopy;Electron energy levels;
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