Publications [#66846] of Adrienne D. Stiff-Roberts

Papers Published

1. Stewart, K. and Buda, M. and Wong-Leung, J. and Fu, L. and Jagadish, C. and Stiff-Roberts, A. and Bhattacharya, P., Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) (2002), pp. 475 - 8, Sydney, NSW, Australia
   (last updated on 2007/04/16)

   Abstract:
   In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900°C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed

   Keywords:
   chemical interdiffusion;III-V semiconductors;infrared detectors;ion implantation;molecular beam epitaxial growth;photodetectors;photoluminescence;rapid thermal annealing;semiconductor epitaxial layers;semiconductor growth;semiconductor quantum dots;transmission electron microscopy;X-ray diffraction;