Publications [#66851] of Adrienne D. Stiff-Roberts

Papers Published

1. Bhattacharya, P. and Stiff-Roberts, A.D. and Krishna, S. and Kennerly, S., Quantum dot long-wavelength detectors, Progress in Semiconductor Materials for Optoelectronic Applications. Symposium (Materials Research Society Symposium Proceedings Vol.692) (2002), pp. 109 - 16, Boston, MA, USA
   (last updated on 2007/04/16)

   Abstract:
   Long-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better high-temperature performance. We have obtained extremely low dark currents (I_dark=1.7 pA, T=100 K, V_bias=0.1 V), high detectivities (D*=2.9×10⁸ cmHz^1/2/W, T=100 K, V_bias=0.2 V), and high operating temperatures (T=150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, is described and discussed

   Keywords:
   cryogenic electronics;current density;dark conductivity;electron relaxation time;gallium arsenide;high-temperature electronics;III-V semiconductors;indium compounds;infrared detectors;photodetectors;semiconductor device measurement;semiconductor epitaxial layers;semiconductor quantum dots;