Publications [#66854] of Adrienne D. Stiff-Roberts

Papers Published

1. Chakrabarti, S. and Stiff-Roberts, A.D. and Bhattacharya, P. and Gunapala, S. and Bandara, S. and Rafol, S.B. and Kennerly, S.W., High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity, IEEE Photonics Technology Letters, vol. 16 no. 5 (2004), pp. 1361 - 1363 [LPT.2004.825974]
   (last updated on 2007/04/16)

   Abstract:
   We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in order to enhance the absorption of quantum-dot infrared photodetectors (QDIPs). In devices with 70 quantum-dot layers, at relatively large operating biases ( [less-than or equal to] -1.0 V), the dark current density is as low as 10^-5 A/cm² and the peak responsivity ranges from [similar to] 0.1 to 0.3 A/W for temperatures T = 150 K - 175 K. The peak detectivity corresponding to these low dark currents and high responsivities varies in the range 6 × 10⁹ [less-than or equal to] D* (cm · Hz^1/2/W) [less-than or equal to] 10¹¹ for temperatures 100 [less-than or equal to] T(K) [less-than or equal to] 200. These performance characteristics represent the state-of-the-art for QDIPs and indicate that this device heterostructure is appropriate for incorporation into focal plane arrays.

   Keywords:
   Semiconductor quantum dots;High temperature operations;Semiconducting indium gallium arsenide;Infrared detectors;Current density;Temperature;Heterojunctions;Molecular beam epitaxy;