Publications [#66856] of Adrienne D. Stiff-Roberts

Papers Published

1. Kochman, Boaz and Stiff-Roberts, Adrienne D. and Chakrabarti, Subhananda and Phillips, Jamie D. and Krishna, Sanjay and Singh, Jasprit and Bhattacharya, Pallab, Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors, IEEE Journal of Quantum Electronics, vol. 39 no. 3 (2003), pp. 459 - 467 [JQE.2002.808169]
   (last updated on 2007/04/16)

   Abstract:
   Quantum-dot infrared photodetectors (QDIPs) are being studied extensively for mid-wavelength and long-wavelength infrared detection because they offer normal-incidence, high-temperature, multispectral operation. Intersubband absorption, carrier lifetime, and gain are parameters that need to be better characterized, understood, and controlled in order to realize high-performance QDIPs. An eight-band k · p model is used to calculate polarization-dependent intersubband absorption. The calculated trend in absorption has been compared with measured data. In addition, a Monte-Carlo simulation is used to calculate the effective carrier lifetime in detectors, allowing the calculation of gain in QDIPs as a function of bias. The calculated gain values can be fitted well with experimental data, revealing that the gain in these devices consists of two mechanisms: Photoconductive gain and avalanche gain, where the latter is less dominant at normal operating biases.

   Keywords:
   Indium compounds;Photoconductivity;Semiconductor superlattices;Impact ionization;Infrared detectors;Monte Carlo methods;