Publications [#63580] of April S. Brown

Papers Published

1. Mishra, U.K. and Brown, A.S. and Rosenbaum, S.E., DC and RF performance of 0.1 μm gate length Al_.48In_.52As-Ga_.38In_.62As pseudomorphic HEMT's, Technical Digest - International Electron Devices Meeting (1988), pp. 180 - 183, San Francisco, CA, USA [IEDM.1988.32784]
   (last updated on 2007/04/14)

   Abstract:
   The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1-μm gate length HEMTs using pseudomorphic Al_0.48In_0.52As-Ga_0.38In_0.62As modulation-doped epitaxial layers and compared them with lattice-matched Al_0.48In_0.52As-Ga_0.47In_0.53As HEMTs. The pseudomorphic HEMTs demonstrated an external f_T (current-gain cutoff frequency) of 205 GHz, which is the first demonstration of a transistor with an f_T gt; 200 GHz. The V-band noise figure of an amplifier built with the lattice-matched, pseudomorphic HEMTs was 1.3 dB and 1.5 dB, respectively. The associated gain was 9.5 dB and 8.0 dB, respectively.

   Keywords:
   Semiconducting Aluminum Compounds;